Prof. B. B. Pal Profile

Prof. B. B. Pal

at Banaras Hindu Univ

SPIE Involvement:

Author

Publications (14)

Proceedings Article | 29 August 2002 Paper

Light-source-integrated OPFET (LSI-OPFET): a new integrated device for optically controlled varying gain amplifier

Satyabrata Jit, B. Pal

Proceedings Volume 4905, (2002) https://doi.org/10.1117/12.481048

KEYWORDS: Light emitting diodes, Integrated optics, Optical amplifiers, Wireless communications, Gallium, Optoelectronics, Optoelectronic devices, Transistors, Heterojunctions, Gallium arsenide

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Proceedings Article | 19 October 2001 Paper

OPFET-LAOS: a new optoelectronic integrated device for light amplifying optical switch

Satyabrata Jit, B. Pal

Proceedings Volume 4580, (2001) https://doi.org/10.1117/12.444952

KEYWORDS: Light emitting diodes, Heterojunctions, Dielectrophoresis, Optoelectronics, Optoelectronic devices, Optical switching, Field effect transistors, Resistance, Metals, Gallium arsenide

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Proceedings Article | 15 October 2001 Paper

Optically controlled E-MESFET for VLSI application

Garima Bandhawakar, B. Pal

Proceedings Volume 4600, (2001) https://doi.org/10.1117/12.444654

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Proceedings Article | 28 April 1999 Paper

Schroedinger's wave function and related device characteristics in MODFET under illumination

P. Singh, B. Pal

Proceedings Volume 3666, (1999) https://doi.org/10.1117/12.347929

KEYWORDS: Field effect transistors, Quantum wells, Interfaces, Heterojunctions, Gallium arsenide, Light scattering, Scattering, Opacity, Neodymium, Data modeling

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SPIE Journal Paper | 1 April 1998

Generalized dc model of GaAs optical field effect transistor considering ion-implanted profile

Shubha Saxena, R. Lohani, R. Khan, B. Pal

OE, Vol. 37, Issue 04, (April 1998) https://doi.org/10.1117/12.10.1117/1.601895

KEYWORDS: Electrons, Gallium arsenide, Darmstadtium, Field effect transistors, Opacity, Dielectrophoresis, Diffusion, Ions, Absorption, Optical engineering

SPIE Journal Paper | 1 August 1995

Theoretical studies on the transient behavior of high electron mobility phototransistors

H. Mitra, S. Singh, B. Pal

OE, Vol. 34, Issue 08, (August 1995) https://doi.org/10.1117/12.10.1117/12.207117

KEYWORDS: Phototransistors, Picosecond phenomena, Opacity, Control systems

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Proceedings Article | 24 April 1995 Paper

Optical effect in small geometry devices

B. Pal, R. Sahoo

Proceedings Volume 2397, (1995) https://doi.org/10.1117/12.206871

KEYWORDS: Quantum efficiency, Gallium arsenide, Absorption, Telecommunications, Optical communications, Diodes, Sensors, Interfaces, Semiconductors, Photovoltaics

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SPIE Journal Paper | 1 April 1994

Enhanced optical effect in a high-electron-mobility phototransistor device: two-dimensional modeling considering a realistic velocity-field relation

B. Pal, H. Mitra, Dharmendra Singh

OE, Vol. 33, Issue 04, (April 1994) https://doi.org/10.1117/12.10.1117/12.163115

KEYWORDS: Phototransistors, Heterojunctions, Gallium arsenide, Instrument modeling, Physics, Field effect transistors, Transistors, Semiconductors, Metals, Resistance

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SPIE Journal Paper | 1 April 1993

Enhanced optical effect in a high electron mobility transistor device

B. Pal, H. Mitra

OE, Vol. 32, Issue 04, (April 1993) https://doi.org/10.1117/12.10.1117/12.61285

KEYWORDS: Transistors, Heterojunctions, Field effect transistors, Radiation effects, Gallium arsenide, Optoelectronic devices, Semiconductors, Photovoltaics, Optoelectronics, Phototransistors

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Proceedings Article | 16 December 1992 Paper

Application of electron beam lithography to produce corrugated surface for DFB lasers

P. Deshmukh, Mulayam Singh, Kamal Rangra, W. Khokle, B. Pal

Proceedings Volume 1622, (1992) https://doi.org/10.1117/12.636907

KEYWORDS: Silicon, Electron beam lithography, Diffraction gratings, Photography, Computer simulations, Scanning electron microscopy, Semiconductor lasers, Photoresist processing, Electronics engineering, Wet etching

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Proceedings Article | 16 December 1992 Paper

Optically controlled characteristics of HEMT

B. Pal, H. Mitra, Dharmendra Singh, S. Chattopadhyay

Proceedings Volume 1622, (1992) https://doi.org/10.1117/12.636865

KEYWORDS: Field effect transistors, Semiconductors, Metals, Photovoltaics, Radiation effects, Photonic devices, Interfaces, Electronics engineering, Physics, Optical communications

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Proceedings Article | 16 December 1992 Paper

Optically tuned characteristics of an ion-implanted GaAs OPFET

B. Pal

Proceedings Volume 1622, (1992) https://doi.org/10.1117/12.637053

KEYWORDS: Gallium arsenide, Integrated optics, Ions, Modulation, Field effect transistors, Transient nonlinear optics, Optical communications, Absorption, Photons, Picosecond phenomena

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Proceedings Article | 1 February 1992 Paper

Quantum-well injection transit time device

B. Pal, R. Khan

Proceedings Volume 1523, (1992) https://doi.org/10.1117/12.57001

KEYWORDS: Quantum wells, Diodes

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Proceedings Article | 1 February 1992 Paper

Effect of surface recombination and modulated frequency on the intrinsic parameters of an ion-implanted GaAs OPFET

Vinaya Singh, S. Singh, B. Pal

Proceedings Volume 1523, (1992) https://doi.org/10.1117/12.57026

KEYWORDS: Modulation, Gallium arsenide, Capacitance, Ions, Resistance, Field effect transistors, Instrument modeling, Switching, Digital electronics, Electrons

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Showing 5 of 14 publications

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