Nano Imprint Lithography (NIL) is a promising technology that combines low costs with high throughput for
fabrication of sub 100 nm scale features. One of the first application areas in which NIL is used is manufacturing
of various types of LED's. The wafers used for producing LED's are typically III/V semiconductor materials
grown with epitaxial processes. These types of substrates suffer from growth defects like hexagonal spikes, vpits,
waferbowing, atomic steps and surface corrugations on a scale of few 10 μm or even large islands of
irregularities. The mentioned irregularities are particularly disturbing when NIL based processes are utilized to
create patterns onto the wafer surface. The nanopatterns created by NIL can be applied to control metal organic
vapour phase epitaxy (MOVPE) growth of GaN nanorods. This paper will show that NIL is an excellent
technology to produce nanopatterned GaN substrates highly suitable to grow defect free arrays of positioncontrolled
nanorods for ultrahigh brightness LED applications.
In order to realize industrial level manufacturing using Nano Imprint Lithography, one of the key challenges is to supply
stamps for the high volume machines. The master stamp is typically time consuming to produce and thus very expensive.
It is therefore preferable to produce the maximum amount of replicated stamp from a master and to ensure that each
stamp replica can deliver as many imprints as possible without losing yield.
Currently, stamp replication is an area of intense development. How to produce a replicated a stamp and how many
replicas that can be achieved from each master depend both on feature sizes, pattern density as well as aspect ratio of the
structures. Several different techniques can be combined in order to obtain a large number of stamp replicas from each
master. The ability to combine several different techniques enables the choice of the ideal technique suited for each
structure type.
This paper will focus on how to address stamp replication challenges in order to secure an adequate supply of stamps to enable high volume manufacturing with Nano Imprint Lithography. Results will be presented on the number of stamps that can be manufactured from each master as well as the lifetime of each individual stamp.
This study investigates a non-destructive optical metrology technique, that furnishes measurement solutions for hard
drive discrete track recording (DTR) and bit patterned media (BPM) templates and imprints. From the measurement and
analysis of polarized reflectance and transmittance, feature height and profile of DTR and BPM templates and imprints,
as well as residual layer thickness of imprints, are accurately determined, and uniformity maps of these parameters are
produced in a fraction of a minute. Simulations of theoretical polarized reflectance and transmittance, relating to next
generation structures, demonstrate that the optical metrology solution has capability for future products.
The increased requirement e.g. resolution in multimedia displays creates the need for more storage capacity in both
optical discs as well as hard drives. Blu-Ray-ROM and particularly future optical media formats require the employment
of new lithography technologies. Today's magnetic media technology is facing difficulties to continue to higher surface
densities and larger capacities due to the superparamagnetic limit. By using isolated magnetic domains to store the data,
making it possible to get beyond 500 Gbits/in2 densities. The approach we describe uses a unique direct-write electron
beam lithography system for lithography on a rotating substrate and creates a patterned master disc, which can be used as
a mold in replication of final disks by imprint lithography. The imprint process replicates the original pattern with an
exceptionally fast turn around time, making mass production of optical and magnetic media possible. However,
realization of these new technologies offers challenges in implementation.
Nanoimprint lithography over 2 inch wafers with a patterned area of 40,000 micrometer squared consisting of interdigitated lines of 100 nm width with varying distance between the lines has been performed. By performing metal lift-off and subsequent UV-lithography for definition of contact regions and pads, complete metal arrays have been fabricated. The structure is electrically characterized by admittance spectroscopy. In this paper we describe the design and realization of a compact nanoimprint lithography system. Furthermore, various aspects of nanoimprint lithography are discussed, and nanoimprint lithography is compared with other nanostructuring technologies.
Conference Committee Involvement (3)
Advanced Fabrication Technologies for Micro/Nano Optics and Photonics VI
5 February 2013 | San Francisco, California, United States
Advanced Fabrication Technologies for Micro/Nano Optics and Photonics V
24 January 2012 | San Francisco, California, United States
Advanced Fabrication Technologies for Micro/Nano Optics and Photonics IV
25 January 2011 | San Francisco, California, United States
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