Scanning confocal microscopy is a widely recognized technique due to its applicability to the imaging of 3D geometries.
Image formation in this technique is often analyzed using the Fresnel approximation. However, such an approximation is
not sufficient when object dimensions are comparable to the operating wavelength and, most of all, when the target is
composed of different semi-transparent materials. Yet, this is very typical for modern integrated circuits where we work
with subwavelength features. In such a case target needs to be modeled using full-wave Maxwell theory. However, most
of electromagnetic modeling methods (like well established FDTD method) become computationally impractical when
the modeled scenario has dimensions measured in hundreds or even thousands of wavelengths like in the far-field
microscopy. Therefore, in this paper we propose a hybrid approach that takes advantage of both FDTD and Fresnel
approximation methods. The first method will be applied to the modeling of close vicinity of the target. The advantage of
that is versatility in definition of arbitrarily shaped geometries as well as wideband approach of the FDTD method.
Subsequently, results provided by the FDTD solver will be transferred to the procedure based on the scalar Fresnel
approximation used to process the final image pixel by pixel. We will show that the presented method allows imaging of
3D shape of targets proving unique advantage of using FDTD method to the modeling of scanning confocal microscopy.
The double patterning (DPT) process is foreseen by the industry to be the main solution for the 32 nm technology node
and even beyond. Meanwhile process compatibility has to be maintained and the performance of overlay metrology has
to improve. To achieve this for Image Based Overlay (IBO), usually the optics of overlay tools are improved. It was also
demonstrated that these requirements are achievable with a Diffraction Based Overlay (DBO) technique named SCOLTM
[1]. In addition, we believe that overlay measurements with respect to a reference grid are required to achieve the
required overlay control [2]. This induces at least a three-fold increase in the number of measurements (2 for double
patterned layers to the reference grid and 1 between the double patterned layers). The requirements of process
compatibility, enhanced performance and large number of measurements make the choice of overlay metrology for DPT
very challenging.
In this work we use different flavors of the standard overlay metrology technique (IBO) as well as the new technique
(SCOL) to address these three requirements. The compatibility of the corresponding overlay targets with double
patterning processes (Litho-Etch-Litho-Etch (LELE); Litho-Freeze-Litho-Etch (LFLE), Spacer defined) is tested. The
process impact on different target types is discussed (CD bias LELE, Contrast for LFLE). We compare the standard
imaging overlay metrology with non-standard imaging techniques dedicated to double patterning processes (multilayer
imaging targets allowing one overlay target instead of three, very small imaging targets). In addition to standard designs
already discussed [1], we investigate SCOL target designs specific to double patterning processes. The feedback to the
scanner is determined using the different techniques. The final overlay results obtained are compared accordingly. We
conclude with the pros and cons of each technique and suggest the optimal metrology strategy for overlay control in
double patterning processes.
The overlay metrology budget is typically 1/10 of the overlay control budget resulting in overlay metrology total
measurement uncertainty requirements of 0.57 nm for the most challenging use cases of the 32nm technology generation.
Theoretical considerations show that overlay technology based on differential signal scatterometry (SCOLTM) has
inherent advantages, which will allow it to achieve the 32nm technology generation requirements and go beyond it.
In this work we present results of an experimental and theoretical study of SCOL. We present experimental results,
comparing this technology with the standard imaging overlay metrology. In particular, we present performance results,
such as precision and tool induced shift, for different target designs. The response to a large range of induced
misalignment is also shown. SCOL performance on these targets for a real stack is reported. We also show results of
simulations of the expected accuracy and performance associated with a variety of scatterometry overlay target designs.
The simulations were carried out on several stacks including FEOL and BEOL materials. The inherent limitations and
possible improvements of the SCOL technology are discussed. We show that with the appropriate target design and
algorithms, scatterometry overlay achieves the accuracy required for future technology generations.
The overlay control budget for the 32nm technology node will be 5.7nm according to the ITRS. The overlay metrology
budget is typically 1/10 of the overlay control budget resulting in overlay metrology total measurement uncertainty
(TMU) requirements of 0.57nm for the most challenging use cases of the 32nm node. The current state of the art
imaging overlay metrology technology does not meet this strict requirement, and further technology development is
required to bring it to this level. In this work we present results of a study of an alternative technology for overlay
metrology - Differential signal scatterometry overlay (SCOL). Theoretical considerations show that overlay technology
based on differential signal scatterometry has inherent advantages, which will allow it to achieve the 32nm technology
node requirements and go beyond it. We present results of simulations of the expected accuracy associated with a
variety of scatterometry overlay target designs. We also present our first experimental results of scatterometry overlay
measurements, comparing this technology with the standard imaging overlay metrology technology. In particular, we
present performance results (precision and tool induced shift) and address the issue of accuracy of scatterometry
overlay. We show that with the appropriate target design and algorithms scatterometry overlay achieves the accuracy
required for future technology nodes.
This paper presents Finite Difference Time Domain (FDTD) method based on discretised Maxwell curl equations and
widely used in microwave circuit design - as a promising tool for new optical metrology purposes. We focus on periodic
FDTD formulations for scattering problems. The interest in efficient full-wave modelling of periodic structures has
arisen due to their increasing applications as slow wave transmission lines, photonic crystals, and metamaterials.
Recently, new efforts have been made to incorporate the FDTD algorithms into the scatterometry overlay technology
(SCOL) toolkit. In SCOL, multilayered grating targets on silicon wafers are illuminated with polarised light at a
particular angle of incidence; reflected signal of the 0th diffraction order is processed to extract the information about
misalignment between grating layers. Since the illumination spot size typically covers tens or even hundreds of grating
periods, direct 3D FDTD modelling of such an electrically large problem needs long computing times. The periodic
FDTD algorithm discussed herein, built upon Floquet theorem, allows reduction of the modelling problem to one or just
a few periods. As a consequence, it substantially speeds up the simulation. The incident wave is modelled as a plane
wave. The reflected wave is extracted via near-to-far (NTF) transformation as in antenna analysis. We cross-calibrate the
FDTD algorithm against other numerical techniques better established in optical metrology, like Rigorous Coupled
Wave Analysis (RCWA). For a benchmark of multilayered rectangular grating composition illuminated with light within
the 500 to 700 nm spectrum, we show that the FDTD and RCWA results for the 0th diffraction order reflection
coefficient are in excellent agreement. The FDTD approach is more flexible as it further allows quantitative
characterisation of non-rectangular periodic structures, higher-order diffraction rays, and periodicity violation. This work
was done in the framework of the SOCOT Consortium [18], sponsored by the European Commission under the IST 6th
Framework Programme, Contract No. 016403.
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