Correcting phase errors is key to building low cost, high performance integrated optical phased arrays for mass-market applications such as automotive lidar. In this work, we present a phase interrogator component for optical phased arrays which enables the phase error to be measured immediately before the output array of optical emitters. A 32-element silicon/silicon nitride optical phased array is realized in a dual layer photonics stack to verify the component performance. Silicon enables high density integration of photonic components and the phase interrogator has a compact design which fits between waveguides with a separation of 2.5 μm. The phase interrogators enable correction of the beam without any measurement or evaluation of the far-field.
Micro-opto-mechanical pressure sensors (MOMPS) based on integrated optical Mach-Zehnder interferometers (MZI) have been fabricated at IMEC, exhibiting much improved sensitivity and noise performance compared to their piezoelectric and capacitive counterparts. However, the design of next generation MOMPS systems on chip still remains uncertain due to the intrinsic multiphysics nature covering mechanical, optical and electrical phenomena. For this reason, we present a sophisticated, flexible and customizable algorithmic tool for the multiphysics simulation and design of highperformance MOMPS systems on chip, including mechanical and optical effects as well as the electronic circuitry for the readout. Furthermore, static and dynamic operating regimes are analyzed, also comparing analytical solutions with experimental results and demonstrating a good agreement. Finally, system noise contributions generated by the optoelectronic components and readout electronics are calculated and a static sensitivity of 8 mV/Pa is measured in the fabricated sensors.
In this paper we present SOI, suspended Si, and Ge-on-Si photonic platforms and devices for the mid-infrared. We demonstrate low loss strip and slot waveguides in SOI and show efficient strip-slot couplers. A Vernier configuration based on racetrack resonators in SOI has been also investigated. Mid-infrared detection using defect engineered silicon waveguides is reported at the wavelength of 2-2.5 μm. In order to extend transparency of Si waveguides, the bottom oxide cladding needs to be removed. We report a novel suspended Si design based on subwavelength structures that is more robust than previously reported suspended designs. We have fabricated record low loss Ge-on-Si waveguides, as well as several other passive devices in this platform. All optical modulation in Ge is also analyzed.