Mr. Benjamin Z. Wu Profile

Benjamin Z. Wu

at Honeywell Electronic Materials

SPIE Involvement:

Author

Publications (5)

Proceedings Article | 18 March 2010 Paper

Characterization of line-edge roughness (LER) propagation from resists: underlayer interfaces in ultrathin resist films

Simi George, Patrick Naulleau, Ahila Krishnamoorthy, Zeyu Wu, Edward Rutter, Joseph Kennedy, Song Yuan Xie, Kyle Flanigan, Thomas Wallow

Proc. SPIE. 7636, Extreme Ultraviolet (EUV) Lithography

KEYWORDS: Thin films, Interfaces, Photoresist materials, Extreme ultraviolet, Extreme ultraviolet lithography, Head-mounted displays, Line edge roughness, Photoresist processing, 3D image processing, Liquids

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Proceedings Article | 11 December 2009 Paper

High Si content anti-reflective coatings and their extension to a UV freeze dual patterning process

Joseph Kennedy, ZeYu Wu, Kyle Flanigan, Junyan Dai, Thomas Wallow

Proc. SPIE. 7520, Lithography Asia 2009

KEYWORDS: Lithography, Optical lithography, Optical properties, Ultraviolet radiation, Silicon, Chemistry, Photoresist materials, Double patterning technology, Semiconducting wafers, Photoresist developing

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Proceedings Article | 1 April 2009 Paper

Performance of an ArF siloxane BARC exposed to a 172-nm UV cure for double patterning applications

Ze-Yu Wu, Joseph Kennedy, Song-Yuan Xie, Ron Katsanes, Kyle Flanigan, Junyan Dai, Nikolaos Bekiaris, Hiram Cervera, Glen Mori, Thomas Wallow

Proc. SPIE. 7273, Advances in Resist Materials and Processing Technology XXVI

KEYWORDS: Lithography, FT-IR spectroscopy, Optical lithography, Optical properties, Ultraviolet radiation, Silicon, Photoresist materials, Double patterning technology, Time division multiplexing, Semiconducting wafers

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Proceedings Article | 4 December 2008 Paper

High Si content BARC for applications in dual BARC systems such as tri-layer patterning

Joseph Kennedy, Song-Yuan Xie, Ze-Yu Wu, Ron Katsanes, Kyle Flanigan, Kevin Lee, Mark Slezak, Nicolette Fender, Junichi Takahashi

Proc. SPIE. 7140, Lithography Asia 2008

KEYWORDS: Lithography, Optical lithography, Optical properties, Etching, Polymers, Silicon, Scanning electron microscopy, Photoresist materials, Plasma etching, Plasma

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Proceedings Article | 4 April 2008 Paper

A high-Si content middle layer for ArF trilayer patterning

Joseph Kennedy, Songyuan Xie, Ronald Katsanes, Kyle Flanigan, Sudip Mukhopadhyay, Benjamin Wu, Edward Rutter, Mark Slezak

Proc. SPIE. 6923, Advances in Resist Materials and Processing Technology XXV

KEYWORDS: Optical lithography, Etching, Silicon, Chemistry, Reflectivity, Photoresist materials, Wet etching, Plasma etching, Photoresist processing, Plasma

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