Dr. Bernhard Kneer Profile

Dr. Bernhard Kneer

at Carl Zeiss SMT GmbH

SPIE Involvement:

Author

Publications (16)

Proceedings Article | 12 October 2018 Presentation

High-NA EUV lithography exposure tool progress (Conference Presentation)

Jan van Schoot, Eelco van Setten, Kars Troost, Frank Bornebroek, Rob van Ballegoij, Sjoerd Lok, Judon Stoeldraijer, Jo Finders, Hans Meiling, Paul Graeupner, Peter Kuerz, Winfried Kaiser, Erik Loopstra, Bernhard Kneer, Sascha Migura

Proceedings Volume 10809, 108090Z (2018) https://doi.org/10.1117/12.2502894

KEYWORDS: Extreme ultraviolet lithography, High volume manufacturing, Scanners, Lens design, Sensors, Polarization, Polarization control

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Proceedings Article | 19 March 2018 Presentation

The future of EUV lithography: continuing Moore's Law into the next decade

Jan van Schoot, Kars Troost, Frank Bornebroek, Rob van Ballegoij, Sjoerd Lok, Peter Krabbendam, Judon Stoeldraijer, Jos Benschop, Jo Finders, Hans Meiling, Eelco van Setten, Bernhard Kneer, Peter Kuerz, Winfried Kaiser, Tilmann Heil, Sascha Migura

Proceedings Volume 10583, 105830R (2018) https://doi.org/10.1117/12.2295800

KEYWORDS: Extreme ultraviolet lithography, Scanners, Imaging systems, Manufacturing, Lens design, Sensors, Optical proximity correction, Modeling, Photomasks, Lithography

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Proceedings Article | 30 October 2017 Presentation + Paper

Edge placement error control and Mask3D effects in High-NA anamorphic EUV lithography

Eelco van Setten, Gerardo Bottiglieri, Laurens de Winter, John McNamara, Paul Rusu, Jan Lubkoll, Gijsbert Rispens, Jan van Schoot, Jens Timo Neumann, Matthias Roesch, Bernhard Kneer

Proceedings Volume 10450, 104500W (2017) https://doi.org/10.1117/12.2280624

KEYWORDS: Extreme ultraviolet lithography, Nanoimprint lithography, Photomasks, Extreme ultraviolet, Reflectivity, Scanners, Mirrors, Semiconducting wafers, Reticles, Imaging systems

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To enable cost-effective shrink at the 3nm node and beyond, and to extend Moore’s law into the next decade, ASML is developing a new high-NA EUV platform. The high-NA system is targeted to feature a numerical aperture (NA) of 0.55 to extend the single exposure resolution limit to 8nm half pitch. The system is being designed to achieve an on-product-overlay (OPO) performance well below 2nm, a high image contrast to drive down local CD errors and to obtain global CDU at sub-1nm level to be able to meet customer edge placement error (EPE) requirements for the devices of the future. EUV scanners employ reflective Bragg multi-layer mirrors in the mask and in the Projection Optics Box (POB) that is used to project the mask pattern into the photoresist on the silicon wafer. These MoSi multi-layer mirrors are tuned for maximum reflectivity, and thus productivity, at 13.5nm wavelength. The angular range of incident light for which a high reflectivity at the reticle can be obtained is limited to ~ +/- 11o, exceeding the maximum angle occurring in current 0.33NA scanners at 4x demagnification. At 0.55NA the maximum angle at reticle level would extend up to 17o in the critical (scanning) direction and compromise the imaging performance of horizontal features severely. To circumvent this issue a novel anamorphic optics design has been introduced, which has a 4x demagnification in the X- (slit) direction and 8x demagnification in the Y- (scanning) direction as well as a central obscuration in the exit pupil. In this work we will show that the EUV high-NA anamorphic concept can successfully solve the angular reflectivity issues and provide good imaging performance in both directions. Several unique imaging challenges in comparison to the 0.33NA isomorphic baseline are being studied, such as the impact of the central obscuration in the POB and Mask-3D effects at increased NA that seem most pronounced for vertical features. These include M3D induced contrast loss and non-telecentricity. We will explore the solutions needed to mitigate these effects and to offer high quality imaging to be able to meet the required EPE performance in both orientations.

SPIE Journal Paper | 30 October 2017

High-numerical aperture extreme ultraviolet scanner for 8-nm lithography and beyond

Jan van Schoot, Eelco van Setten, Gijsbert Rispens, Kars Troost, Bernhard Kneer, Sascha Migura, Jens Timo Neumann, Winfried Kaiser

JM3, Vol. 16, Issue 04, 041010, (October 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.4.041010

KEYWORDS: Photomasks, Scanners, Semiconducting wafers, Extreme ultraviolet, Extreme ultraviolet lithography, Lithography, Mirrors, Nanoimprint lithography, Projection systems, Wafer-level optics

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Proceedings Article | 16 October 2017 Presentation + Paper

High-NA EUV lithography enabling Moore’s law in the next decade

Jan van Schoot, Kars Troost, Frank Bornebroek, Rob van Ballegoij, Sjoerd Lok, Peter Krabbendam, Judon Stoeldraijer, Erik Loopstra, Jos Benschop, Jo Finders, Hans Meiling, Eelco van Setten, Bernhard Kneer, Peter Kuerz, Winfried Kaiser, Tilmann Heil, Sascha Migura, Jens Timo Neumann

Proceedings Volume 10450, 104500U (2017) https://doi.org/10.1117/12.2280592

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Semiconducting wafers, Mirrors, Reticles, Projection systems, Optical design, Imaging systems, Extreme ultraviolet

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Proceedings Article | 27 March 2017 Presentation + Paper

The future of EUV lithography: enabling Moore's Law in the next decade

Alberto Pirati, Jan van Schoot, Kars Troost, Rob van Ballegoij, Peter Krabbendam, Judon Stoeldraijer, Erik Loopstra, Jos Benschop, Jo Finders, Hans Meiling, Eelco van Setten, Niclas Mika, Jeannot Dredonx, Uwe Stamm, Bernhard Kneer, Bernd Thuering, Winfried Kaiser, Tilmann Heil, Sascha Migura

Proceedings Volume 10143, 101430G (2017) https://doi.org/10.1117/12.2261079

KEYWORDS: Extreme ultraviolet lithography, Scanners, Manufacturing, Lens design, Sensors, Optical proximity correction, Modeling, Photomasks, Semiconducting wafers, Extreme ultraviolet, Reflectivity, EUV optics, Lithography, Projection systems

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Proceedings Article | 18 March 2016 Paper

EUV high-NA scanner and mask optimization for sub-8nm resolution

Jan van Schoot, Koen van Ingen Schenau, Gerardo Bottiglieri, Kars Troost, John Zimmerman, Sascha Migura, Bernhard Kneer, Jens Timo Neumann, Winfried Kaiser

Proceedings Volume 9776, 97761I (2016) https://doi.org/10.1117/12.2220150

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Reticles, Scanners, Semiconducting wafers, Source mask optimization, Wafer-level optics, Lithography, Imaging systems, Extreme ultraviolet, Neodymium, Ions

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Proceedings Article | 16 November 2015 Paper

EUV High-NA scanner and mask optimization for sub 8 nm resolution

Jan van Schoot, Koen van Ingen Schenau, Gerardo Bottiglieri, Kars Troost, John Zimmerman, Sascha Migura, Bernhard Kneer, Jens Timo Neumann, Winfried Kaiser

Proceedings Volume 9635, 963503 (2015) https://doi.org/10.1117/12.2202258

KEYWORDS: Extreme ultraviolet lithography, Scanners, Photomasks, Reticles, Image resolution, Lithography, Wafer-level optics, Semiconducting wafers, Source mask optimization, EUV optics, Imaging systems, Nanoimprint lithography, Ions, Neodymium

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Proceedings Article | 4 September 2015 Paper

Anamorphic high-NA EUV lithography optics

Sascha Migura, Bernhard Kneer, Jens Timo Neumann, Winfried Kaiser, Jan van Schoot

Proceedings Volume 9661, 96610T (2015) https://doi.org/10.1117/12.2196393

KEYWORDS: Photomasks, Reticles, Extreme ultraviolet lithography, Semiconducting wafers, Projection systems, Mirrors, Lithography, EUV optics, Wafer-level optics, Lithographic illumination

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Proceedings Article | 16 March 2015 Paper

Imaging performance of EUV lithography optics configuration for sub-9nm resolution

Jens Timo Neumann, Matthias Rösch, Paul Gräupner, Sascha Migura, Bernhard Kneer, Winfried Kaiser, Koen van Ingen Schenau

Proceedings Volume 9422, 94221H (2015) https://doi.org/10.1117/12.2175658

KEYWORDS: Reticles, Imaging systems, Semiconducting wafers, Photomasks, Diffraction, Lithography, Extreme ultraviolet lithography, Image resolution, Source mask optimization, EUV optics

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Proceedings Article | 16 March 2015 Paper

EUV lithography optics for sub-9nm resolution

Bernhard Kneer, Sascha Migura, Winfried Kaiser, Jens Timo Neumann, Jan van Schoot

Proceedings Volume 9422, 94221G (2015) https://doi.org/10.1117/12.2175488

KEYWORDS: Reticles, Photomasks, Projection systems, Extreme ultraviolet lithography, Diffraction, Semiconducting wafers, Mirrors, EUV optics, Extreme ultraviolet, Lithography

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Proceedings Article | 16 March 2009 Paper

Experimental result and simulation analysis for the use of pixelated illumination from source mask optimization for 22nm logic lithography process

Kafai Lai, Alan Rosenbluth, Saeed Bagheri, John Hoffnagle, Kehan Tian, David Melville, Jaione Tirapu-Azpiroz, Moutaz Fakhry, Young Kim, Scott Halle, Greg McIntyre, Alfred Wagner, Geoffrey Burr, Martin Burkhardt, Daniel Corliss, Emily Gallagher, Tom Faure, Michael Hibbs, Donis Flagello, Joerg Zimmermann, Bernhard Kneer, Frank Rohmund, Frank Hartung, Christoph Hennerkes, Manfred Maul, Robert Kazinczi, Andre Engelen, Rene Carpaij, Remco Groenendijk, Joost Hageman, Carsten Russ

Proceedings Volume 7274, 72740A (2009) https://doi.org/10.1117/12.814680

KEYWORDS: Photomasks, Source mask optimization, Diffractive optical elements, Manufacturing, Lithographic illumination, Lithography, Semiconducting wafers, Photovoltaics, Polarization, Printing

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Proceedings Article | 27 March 2007 Paper

Modeling polarization for hyper-NA lithography tools and masks

Kafai Lai, Alan Rosenbluth, Geng Han, Jaione Tirapu-Azpiroz, Jason Meiring, Aksel Goehnermeier, Bernhard Kneer, Michael Totzeck, Laurens de Winter, Wim de Boeij, Mark van de Kerkhof

Proceedings Volume 6520, 65200D (2007) https://doi.org/10.1117/12.712272

KEYWORDS: Polarization, Photomasks, Lithography, Optical proximity correction, Diffraction, Birefringence, Pellicles, Critical dimension metrology, Optical lithography, Thin films

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Proceedings Article | 15 March 2006 Paper

Immersion lithography with an ultrahigh-NA in-line catadioptric lens and a high-transmission flexible polarization illumination system

Hans Jasper, Theo Modderman, Mark van de Kerkhof, Christian Wagner, Jan Mulkens, Wim de Boeij, Eelco van Setten, Bernhard Kneer

Proceedings Volume 6154, 61541W (2006) https://doi.org/10.1117/12.657558

KEYWORDS: Polarization, Combined lens-mirror systems, Semiconducting wafers, Curtains, Lens design, Lithographic illumination, Fiber optic illuminators, Lithography, Mirrors, Imaging systems

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Proceedings Article | 15 March 2006 Paper

Catadioptric lens design: the breakthrough to hyper-NA optics

Bernhard Kneer, Paul Gräupner, Reiner Garreis, Ralph Kläsges, Heiko Feldmann

Proceedings Volume 6154, 615420 (2006) https://doi.org/10.1117/12.668024

KEYWORDS: Mirrors, Combined lens-mirror systems, Lens design, Coating, Optical design, Polarization, Chemical elements, Reticles, Stray light, Water

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Proceedings Article | 28 December 1999 Paper

Population inversion for a single trapped two-level ion

Gagik Kryuchkyan, Bernard Kneer

Proceedings Volume 4060, (1999) https://doi.org/10.1117/12.375302

KEYWORDS: Ions, Ion lasers, Absorption, Quantum computing, Chemical species, Raman spectroscopy, Electromagnetism, Chemical elements, Quantum electronics, Radon

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Showing 5 of 16 publications

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