Dr. Berthold Hahn Profile

Dr. Berthold Hahn

at ams-OSRAM International GmbH

SPIE Involvement:

Author

Publications (10)

Proceedings Article | 8 March 2016 Paper

Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties

C. De Santi, M. Meneghini, M. La Grassa, N. Trivellin, B. Galler, R. Zeisel, B. Hahn, M. Goano, S. Dominici, M. Mandurrino, F. Bertazzi, G. Meneghesso, E. Zanoni

Proceedings Volume 9768, 97680D (2016) https://doi.org/10.1117/12.2210953

KEYWORDS: Light emitting diodes, Temperature metrology, Indium gallium nitride, Quantum wells, Signal processing, Quantum efficiency, Thermography, Indium, Electroluminescence, Spectroscopes, Electron beam lithography, Data modeling, Measurement devices, Thermal modeling, Phonons, Numerical simulations

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Proceedings Article | 12 February 2010 Paper

A study on the reverse-bias and ESD instabilities of InGaN-based green LEDs

M. Meneghini, A. Tazzoli, N. Trivellin, E. Ranzato, M. Dal Lago, B. Hahn, U. Zehnder, R. Butendeich, G. Meneghesso, E. Zanoni

Proceedings Volume 7617, 76170M (2010) https://doi.org/10.1117/12.841826

KEYWORDS: Light emitting diodes, Luminescence, Reliability, Statistical analysis, Microscopy, Green light emitting diodes, Gallium nitride, Electro optics, Photomicroscopy, Indium gallium nitride

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Proceedings Article | 16 February 2009 Paper

Investigation of the electrical activity of V-defects in GaN using scanning force microscopy

André Lochthofen, Wolfgang Mertin, Gerd Bacher, Lutz Hoeppel, Stefan Bader, Jürgen Off, Berthold Hahn

Proceedings Volume 7216, 721610 (2009) https://doi.org/10.1117/12.808992

KEYWORDS: Gallium nitride, Atomic force microscopy, Doping, Temperature metrology, Heterojunctions, Scanning transmission electron microscopy, Interfaces, Microscopy, Oxides, Image transmission

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Proceedings Article | 12 February 2008 Paper

High-power InGaN LEDs: present status and future prospects

B. Hahn, A. Weimar, M. Peter, J. Baur

Proceedings Volume 6910, 691004 (2008) https://doi.org/10.1117/12.767255

KEYWORDS: Light emitting diodes, Indium gallium nitride, Standards development, Light sources and illumination, Internal quantum efficiency, Photons, Quantum wells, Quantum efficiency, Semiconductors, Green light emitting diodes

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Proceedings Article | 26 September 2007 Paper

GaInN LEDs: straight way for solid state lighting

U. Zehnder, B. Hahn, J. Baur, M. Peter, S. Bader, H. Lugauer, A. Weimar

Proceedings Volume 6797, 67970E (2007) https://doi.org/10.1117/12.759472

KEYWORDS: Light emitting diodes, Solid state lighting, Lamps, Indium gallium nitride, External quantum efficiency, Headlamps, Mirrors, LCDs, Light sources and illumination, Internal quantum efficiency

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Proceedings Article | 13 February 2007 Paper

Measurement of the internal quantum efficiency of InGaN quantum wells

A. Laubsch, M. Sabathil, G. Bruederl, J. Wagner, M. Strassburg, E. Baur, H. Braun, U. Schwarz, A. Lell, S. Lutgen, N. Linder, R. Oberschmid, B. Hahn

Proceedings Volume 6486, 64860J (2007) https://doi.org/10.1117/12.700829

KEYWORDS: Quantum wells, Gallium nitride, Indium gallium nitride, Temperature metrology, Doping, Light emitting diodes, Luminescence, Internal quantum efficiency, Electron holes, Magnesium

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Proceedings Article | 8 February 2007 Paper

Degradation studies of InGaN/GaN heterostructure laser diodes using a Kelvin Force Microscope

André Lochthofen, Wolfgang Mertin, Gerd Bacher, Michael Furitsch, Georg Brüderl, Berthold Hahn, Uwe Strauss, Volker Härle

Proceedings Volume 6473, 64730Z (2007) https://doi.org/10.1117/12.704855

KEYWORDS: Diodes, Semiconductor lasers, Microscopy, Heterojunctions, Gallium nitride, Mirrors, Electroluminescence, Gold, Silicon carbide, Magnesium

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Proceedings Article | 26 January 2004 Paper

Advanced technologies for high-efficiency GaInN LEDs for solid state lighting

Volker Harle, Berthold Hahn, Johannes Baur, Michael Fehrer, Andreas Weimar, Stephan Kaiser, Dominik Eisert, Franz Eberhard, Andreas Plossl, Stefan Bader

Proceedings Volume 5187, (2004) https://doi.org/10.1117/12.521358

KEYWORDS: Light emitting diodes, Silicon carbide, Sapphire, Photons, Solid state lighting, Reflectivity, Standards development, Gallium nitride, Gallium arsenide, Indium gallium nitride

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Proceedings Article | 3 July 2003 Paper

Light extraction technologies for high efficiency GaInN-LED devices

Volker Haerle, Berthold Hahn, Stephan Kaiser, Andreas Weimar, Dominik Eisert, Stefan Bader, Andreas Ploessl, Franz Eberhard

Proceedings Volume 4996, (2003) https://doi.org/10.1117/12.476591

KEYWORDS: Light emitting diodes, Quantum wells, Manufacturing, RGB color model, Laser liftoff, Sapphire, Gallium arsenide, Reflectivity

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Proceedings Article | 11 May 1994 Paper

Metallorganic vapor phase epitaxy growth of ZnSe1-xTex on (111) and (001) GaAs substrates

Harald Stanzl, A. Rosenauer, Klaus Wolf, Marcus Kastner, Berthold Hahn, W. Gebhardt

Proceedings Volume 2140, (1994) https://doi.org/10.1117/12.175786

KEYWORDS: Gallium arsenide, Interfaces, Tellurium, Reflection, Image segmentation, Photomicroscopy, Oxygen, Transmission electron microscopy, X-ray diffraction, X-rays

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Showing 5 of 10 publications

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