Push broom multi-band Focal Plane Array (FPA) design needs to consider optics, image sensor, electronic, mechanic as well as thermal. Conventional FPA use two or several CCD device as an image sensor. The CCD image sensor requires several high speed, high voltage and high current clock drivers as well as analog video processors to support their operation. Signal needs to digitize using external sample / hold and digitized circuit. These support circuits are bulky, consume a lot of power, must be shielded and placed in close to the CCD to minimize the introduction of unwanted noise. The CCD also needs to consider how to dissipate power. The end result is a very complicated FPA and hard to make due to more weighs and draws more power requiring complex heat transfer mechanisms. In this paper, we integrate microelectronic technology and multi-layer soft / hard Printed Circuit Board (PCB) technology to design electronic portion. Since its simplicity and integration, the optics, mechanic, structure and thermal design will become very simple. The whole FPA assembly and dis-assembly reduced to a few days. A multi-band CMOS Sensor (dedicated as C468) was used for this design. The CMOS Sensor, allow for the incorporation of clock drivers, timing generators, signal processing and digitization onto the same Integrated Circuit (IC) as the image sensor arrays. This keeps noise to a minimum while providing high functionality at reasonable power levels. The C468 is a first Multiple System-On-Chip (MSOC) IC. This device used our proprietary wafer butting technology and MSOC technology to combine five long sensor arrays into a size of 120 mm x 23.2 mm and 155 mm x 60 mm for chip and package, respectively. The device composed of one Panchromatic (PAN) and four different Multi- Spectral (MS) sensors. Due to its integration on the electronic design, a lot of room is clear for the thermal design. The optical and mechanical design is become very straight forward. The flight model FPA passed all of the reliability testing.
Three CMOS sensors were developed for remote sensing instrument (RSI) applications. First device is linear CMOS Sensor for Terrain Mapping Camera (TMC). This device has 4000 elements, 7 μm x 7 μm of pixel size. Second device is area CMOS Sensor for Hyper Spectral Imager (HySI). The device has 512 x
256 elements and 50 μm x 50 μm of pixel size. Third device is multi band sensor for Remote Sensing Instrument (RSI). This device integrates five linear CMOS sensor into a single monolithic chip to form a Multiple System On Chip (MSOC) IC. The multi band sensor consists of one panchromatic (PAN) and four multi - spectral (MS) bands. The PAN is 12000 elements, 10 μm x 10 μm with integration time of 297
μs ± 5%. Each MS band is 6000 elements, 20 μm x 20 μm with integration time of 594 us μs ± 5%. Both linear and area CMOS sensor were designed and developed for Chandrayaan-1 project. The Chandrayaan-1 satellite was launched to the moon on October 22, 2008. The moon orbit height is 100 km and 20 km of swath size. The multi band sensor was designed for earth orbit. The earth orbit height is about 720 km and 24 km of swath. The low weight, low power consumption and high radiation tolerance
camera requirement only can be done by CMOS Sensor technology. The detail device structure and performance of three CMOS sensors will present.
Conventional space sensors have traditionally used CCD image sensors. Since CCD sensors provide analog output
signals, the camera system has needed to integrate additional analog and digital circuitry including CCD drivers. The
result is a camera that weighs more than 30 kg and dissipates more than 10 Watts of power. We report using an
advanced semiconductor technology to integrate CMOS image sensors, analog and digital circuitry together into a single
silicon chip. A Terrain Mapping Camera (TMC) was designed using this approach. The entire camera weighs less than
7 kg and dissipates only 1.8 Watts of power. The TMC was recently launched into moon orbit on October 22, 2008
aboard Chandrayaan-1. The image quality sent back from the TMC is excellent. Radiation testing of the digital image
sensor was conducted prior to launch with the device enduring more than 300 kilo-rads.
In traditional modal strain energy method, the real eigen-vector of each mode obtained from finite element analysis of the corresponding undamped structure is used to calculate modal strain energy in each material layer, and an iterative approach is used in dealing with the frequency dependency of viscoelastic materials. In this paper, a revised modal strain energy method is presented to significantly improve analysis accuracy of the structural natural frequencies and modal loss factors when the material loss factor is high, and a simplified approach is recommended to replace the iterative analysis to avoid tremendous amount of computational effort.
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