Ms. Blandine Minghetti Profile

Blandine Minghetti

Principal Apps Engineer at ASML Malta

SPIE Involvement:

Author

Publications (16)

Proceedings Article | 20 March 2020 Paper

Stitched overlay evaluation and improvement for large field applications

Michael May, Blandine Minghetti, Jérome Dépré, Yoann Blancquaert, Pui Lam, Céline Lapeyre, Joungchel Lee

Proc. SPIE. 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV

KEYWORDS: Metrology, Scanners, Critical dimension metrology, Overlay metrology

Read Abstract +

Reducing the overlay error between stacked layers is key to enabling higher pattern density and thus moving towards high performance and more cost effective devices. However, as for specific applications like macrochips with photonic interconnects and high-resolution image sensor flat panels with advance polarizers, customers require product field sizes that are larger than the maximum field size available on scanners. Those large fields are obtained by stitching together multiple standard fields. The overlay performances between two adjacent dies are as aggressive as what is usually required between two stacked layers. For this application, the well-established polynomial overlay model is not suitable as the displacement is measured relatively and the metrology sampling in the field is such that some high order nonlinear (K) terms cannot be modeled independently. Furthermore, a perfect grid is needed in mix and match production. The intrafield correction capability of the exposure tool is not the same for each process steps. For example, no intrinsic K13 can be printed for a mix and match process flow that includes an Extreme Ultra-Violet (EUV) litho step. In addition, some KrF scanners with fewer lens manipulators cannot correct for K9. Measuring the stitching and correcting it at the first layer will prevent printing K terms that are not correctable later in the process. In this paper, the need to characterize and control single-layer overlay among different pattern placement mechanisms intrinsic to the scanner was studied: optical aberrations, field-to-field position, mask placement and registration. An ASML set-up BP-XY-V3 reticle was used to generate a large experimental dataset to validate stitching models supported by Overlay Optimizer (OVO). Overlay measurements were done Resist-in-Resist using new YieldStar (YS) interlaced stitching Diffraction Based Overlay (μDBO) targets that were designed and validated. This paper will present on product metrology results of a scatterometry-based platform showing production results with focus not only on precision and on accuracy, but also assessing target performance and target-to-target delta without process influence. A high order stitching model was developed and verified on a Multi-Product Reticle for a large device application. Trench width control at the field intersection was studied then optimized with proximity correction to ensure a perfect field-to-field junction.

Proceedings Article | 24 March 2017 Paper

Novel methodology to optimize wafer alignment to enhance 14nm on product overlay

Pavan Samudrala, Woong Jae Chung, Lokesh Subramany, Haiyong Gao, Nyan Aung, Seung Chul Oh, Shawn Lee, Erik Delvigne, Blandine Minghetti

Proc. SPIE. 10147, Optical Microlithography XXX

KEYWORDS: Lithium, Roads, Data modeling, Scanners, Optical alignment, Yield improvement, Overlay metrology

Read Abstract +

Proceedings Article | 24 March 2017 Paper

Alignment solutions on FBEOL layers using ASML scanners

Pavan Samudrala, Gregory Hart, Yen-Jen Chen, Lokesh Subramany, Haiyong Gao, Nyan Aung, Woong Jae Chung, Blandine Minghetti, Rajan Mali, Seva Khikhlovskyi, Pieter Heres

Proc. SPIE. 10147, Optical Microlithography XXX

KEYWORDS: Near infrared, Sensors, Scanners, Aluminum, Optical alignment, Laser beam diagnostics

Read Abstract +

Proceedings Article | 21 April 2016 Paper

Analysis of wafer heating in 14nm DUV layers

Lokesh Subramany, Woong Jae Chung, Pavan Samudrala, Haiyong Gao, Nyan Aung, Juan Manuel Gomez, Blandine Minghetti, Shawn Lee

Proc. SPIE. 9778, Metrology, Inspection, and Process Control for Microlithography XXX

KEYWORDS: Reticles, Metrology, Data modeling, Deep ultraviolet, Metals, Scanners, Process control, Photomasks, Image enhancement, Semiconducting wafers, Overlay metrology

Read Abstract +

Proceedings Article | 4 April 2012 Paper

High-order wafer alignment in manufacturing

Michael Pike, Nelson Felix, Vinayan Menon, Christopher Ausschnitt, Timothy Wiltshire, Sheldon Meyers, Won Kim, Blandine Minghetti

Proc. SPIE. 8324, Metrology, Inspection, and Process Control for Microlithography XXVI

KEYWORDS: Metrology, Data modeling, Scanners, Manufacturing, Control systems, Process control, Semiconductor manufacturing, Optical alignment, Semiconducting wafers, Overlay metrology

Read Abstract +

Proceedings Article | 22 February 2012 Paper

Lens heating challenges for negative tone develop layers with freeform illumination: a comparative study of experimental vs. simulated results

Scott Halle, Michael Crouse, Aiqin Jiang, Youri van Dommelen, Tim Brunner, Blandine Minghetti, Matt Colburn, Youping Zhang

Proc. SPIE. 8326, Optical Microlithography XXV

KEYWORDS: Lithography, Monochromatic aberrations, Reticles, Calibration, Photomasks, Source mask optimization, Critical dimension metrology, Semiconducting wafers, Overlay metrology, Device simulation

Read Abstract +

Proceedings Article | 4 March 2010 Paper

Toward perfect on-wafer pattern placement: stitched overlay exposure tool characterization

Christopher Ausschnitt, Timothy Brunner, Nelson Felix, Blandine Minghetti

Proc. SPIE. 7640, Optical Microlithography XXIII

KEYWORDS: Optical imaging, Lithography, Optical lithography, Error analysis, Photomasks, Double patterning technology, Semiconducting wafers, Tolerancing, Overlay metrology, Tin

Read Abstract +

Proceedings Article | 4 March 2010 Paper

Overlay characterization and matching of immersion photoclusters

Blandine Minghetti, Timothy Brunner, Christopher Robinson, Christopher Ausschnitt, Dan Corliss, Nelson Felix

Proc. SPIE. 7640, Optical Microlithography XXIII

KEYWORDS: Monochromatic aberrations, Reticles, Metrology, Data modeling, Scanners, Distortion, Double patterning technology, Critical dimension metrology, Semiconducting wafers, Overlay metrology

Read Abstract +

Proceedings Article | 22 March 2008 Paper

Process control for 45 nm CMOS logic gate patterning

Bertrand Le Gratiet, Pascal Gouraud, Enrique Aparicio, Laurene Babaud, Karen Dabertrand, Mathieu Touchet, Stephanie Kremer, Catherine Chaton, Franck Foussadier, Frank Sundermann, Jean Massin, Jean-Damien Chapon, Maxime Gatefait, Blandine Minghetti, Jean de-Caunes, Daniel Boutin

Proc. SPIE. 6922, Metrology, Inspection, and Process Control for Microlithography XXII

KEYWORDS: Reticles, Optical lithography, Etching, Scanners, Scatterometry, Process control, Photomasks, Immersion lithography, Critical dimension metrology, Semiconducting wafers

Read Abstract +

Proceedings Article | 7 March 2008 Paper

Improving lithography intra wafer CD for C045 implant layers using STI thickness feed forward?

Jean Massin, Bastien Orlando, Maxime Gatefait, Jean-Damien Chapon, Bertrand Le-Gratiet, Blandine Minghetti, Pierre-Jérôme Goirand

Proc. SPIE. 6924, Optical Microlithography XXI

KEYWORDS: Oxides, Lithography, Metrology, Logic, Optical lithography, Etching, Scanners, Critical dimension metrology, Semiconducting wafers, Chemical mechanical planarization

Read Abstract +

SPIE Journal Paper | 1 July 2007

Complementary dose and geometrical solutions for electron beam direct write lithography proximity effects correction: application for sub-45-nm node product manufacturing

Serdar Manakli, C. Soonekindt, Laurent Pain, J. Le Denmat, Jerome Todeschini, B. Icard, B. Minghetti

JM3 Vol. 6 Issue 03

KEYWORDS: Modulation, Critical dimension metrology, Electron beam direct write lithography, Point spread functions, Electron beam lithography, Cadmium sulfide, Electron beams, Optical lithography, Manufacturing, Backscatter

Read Abstract +

Proceedings Article | 3 May 2007 Paper

Electron beam lithography simulation based on a single convolution approach: application for sub-45nm nodes

J. Le denmat, S. Manakli, B. Icard, C. Soonekindt, B. Minghetti, O. Le borgne, L. Pain

Proc. SPIE. 6533, 23rd European Mask and Lithography Conference

KEYWORDS: Electron beam lithography, Point spread functions, Electron beams, Scattering, Laser scattering, Monte Carlo methods, Optical simulations, Convolution, Electron beam direct write lithography, Photoresist processing

Read Abstract +

Proceedings Article | 6 May 2005 Paper

Electron beam direct write lithography flexibility for ASIC manufacturing: an opportunity for cost reduction

L. Pain, M. Jurdit, J. Todeschini, S. Manakli, B. Icard, B. Minghetti, G. Bervin, A. Beverina, F. Leverd, M. Broekaart, P. Gouraud, V. De Jonghe, Ph. Brun, S. Denorme, F. Boeuf, V. Wang, D. Henry

Proc. SPIE. 5751, Emerging Lithographic Technologies IX

KEYWORDS: Lithography, Optical lithography, Manufacturing, Photomasks, Optical proximity correction, Electron beam direct write lithography, Photoresist processing, Semiconducting wafers, Optics manufacturing, Standards development

Read Abstract +

Proceedings Article | 4 May 2005 Paper

Electron beam direct write process development for sub 45nm CMOS manufacturing

J. Todeschini, Laurent Pain, S. Manakli, B. Icard, V. DeJonghe, B. Minghetti, M. Jurdit, D. Henry, V. Wang

Proc. SPIE. 5753, Advances in Resist Technology and Processing XXII

KEYWORDS: Semiconductors, Electron beam lithography, Electron beams, Etching, Coating, Manufacturing, Line width roughness, Electron beam direct write lithography, Photoresist processing, Semiconducting wafers

Read Abstract +

Proceedings Article | 14 September 2001 Paper

Impact of scattering bar in the presence of lens aberrations

Andrew Khoh, Blandine Minghetti, Byoung-Il Choi, Yihong Wu, Ganesh Samudra

Proc. SPIE. 4346, Optical Microlithography XIV

KEYWORDS: Lithography, Diffraction, Monochromatic aberrations, Lithographic illumination, Deep ultraviolet, Spatial frequencies, Scattering, Calcium, Wavefronts, Photomasks

Read Abstract +

Proceedings Article | 26 July 1999 Paper

Flare impact on the intrafield CD control for sub-0.25-um patterning

Emmanuelle Luce, Blandine Minghetti, Patrick Schiavone, Olivier Toublan, Andre Weill

Proc. SPIE. 3679, Optical Microlithography XII

KEYWORDS: Reticles, Optical lithography, Reflection, Scanners, Error analysis, Reflectivity, Scanning electron microscopy, Photomasks, Critical dimension metrology, Semiconducting wafers

Read Abstract +

Showing 5 of 16 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years