808 nm QCW bars were fabricated and mounted with hard solder technology onto H-mounts and G-stacks. At room
temperature, reliable operation has been demonstrated at 400W at 400A per single 1-cm bar and for a G-stack at 3kW at
around 300A. High temperature reliable operation has been demonstrated for both devices up to 95°C. Both types of
devices were tested at various pulse widths and duty cycles. Both optical power and wavelength dependencies on the
various conditions have been studied.
KEYWORDS: Quantum wells, Waveguides, Semiconducting wafers, Semiconductor lasers, Optical tweezers, Signal attenuation, High power lasers, Lab on a chip, Refractive index, Cladding
Record values for the rollover power and rollover linear power densities of 9xx nm devices, obtained by simultaneous
scaling of length and d/Γ, are reported. The values for d/Γ lay in the range 0.8 μm to 1.2 μm with corresponding cavity
lengths from 3.5 mm to 5 mm. The transversal structures were asymmetric, with a higher refractive index on the n side.
An optical trap was helpful in reducing the radiation extension on the p side and the overall thickness. The highest
rollover linear power densities were 244 mW/μm for structures without an optical trap and 290 mW/μm for those that
included an optical trap
This paper presents the results obtained by Intense during the development of its 2 kW stack using Quantum Well
Intermixing (QWI). A 200 W QCW bar operating at 808 nm has been designed with a 1 mm long cavity of which only a
fraction is actively pumped. The bar has an 80% fill factor, and ten 200 W bars were stacked vertically in a G-type
package with a 417 μm bar-to-bar pitch. The resulting compact emission area makes the stack compatible with most
existing laser and electro-optic systems. A lifetime of 1x109 shots has been obtained with no measurable degradation.
An individually addressable visible semiconductor laser diode array with a 20 μm pitch is demonstrated that is highly
suited for deployment in next-generation digital print systems. The array, operating at 660 nm, comprises 22 single mode
lasers fabricated on a single GaInP/AlGaInP/GaAs substrate. The laser array is flip-chip bonded onto a patterned ceramic
submount that enables the individual elements to be driven independently and is integrated into a 26-pin butterfly
package. Arrays tested CW exhibit low threshold current (<20 mA per emitter), up to 50 mW output power per channel
with a high slope efficiency (0.9 W/A) and a high characteristic temperature of over 100 K.
Novel types of laser diode array with a 100% filling factor at the emission facet are reported. The arrays utilize both
parallel and tapered cavity emitters that are connected via a common Laterally Unconfined Non-Absorbing Mirror
(LUNAM) defined with quantum-well intermixing technology at 808 nm wavelength. Two LUNAM array types are
considered: incoherent (weakly coupled) and coherent (diffraction coupled).
Incoherent LUNAM arrays benefit from a reduced power density at the facet, improving reliability, and a near-uniform
intensity distribution across the array aperture. Stacked laser diode arrays built with LUNAM bars deliver 950 W power
under QCW operation with <5% degradation at 1.9×108 shots.
Novel coherent arrays are realized using a monolithically integrated LUNAM Talbot cavity. The devices produce a
single-lobed horizontal far-field pattern over a limited current range with <10% slope efficiency penalty compared to an
uncoupled case. The LUNAM arrays are promising candidates for high-power, high-brightness and high-reliability
operation.
Single mode laser diode arrays operating at 808 nm have been designed and fabricated using several different waveguide
and quantum well combinations. In order to operate these devices at 200 mW per element a quantum well intermixing
process has been used to render their facets non-absorbing and thus they do not suffer from mirror damage related
failure. In this paper we demonstrate extremely high levels of reliability for GaAs and AlGaAs quantum well devices
with arrays of 64 elements completing over 6000 hours continuous operation without any single laser element failure and
a correspondingly low power degradation rate of <1% k/hr. In contrast we show extremely high power degradation rates
for arrays using InGaAs and InAlGaAs 808 nm quantum wells laser arrays.
In this paper we report the development of high power high brightness semiconductor laser chips using a combination of
quantum well intermixing (QWI) and novel laser designs including laterally unconfined non-absorbing mirrors
(LUNAM). We demonstrate both multi-mode and single-mode lasers with increased power and brightness and reliability
performance for the wavelengths of 980 nm, 940 nm, 830 nm and 808 nm.
Quantum well intermixing (QWI) of the facet regions of a semiconductor laser can significantly improve the COD of the device giving high kink power and high reliability. A novel epitaxy design incorporating a graded 'V-profile' layer allows for a reduced vertical far-field and simultaneously suppresses higher order modes to give high power operation. Furthermore, the 'V-profile' layer provides a robust design to improve the ridge etch tolerance to give excellent device performance uniformity across an array. Very large arrays of individually addressable lasers (up to 100 elements) are reported with small pitch size (~100 μm), high single mode power (up to 300 mW) and high uniformity.
The market for data modulators at 10 Gb/s is currently dominated by Mach-Zehnder phase modulators fabricated in LiNbO3 (LN). However they are relatively expensive to manufacture and large compared to semiconductor devices. InP based electroabsorption modulators (EAMs), are more compact; however they have a limited bandwidth (5-8 nm) over which chirp is in the correct range to allow >80 km reach. This paper reports the broadband electroabsorption modulator (BEAM) concept in which reach performance in line with LN modulators can be achieved using integrated InP components. The BEAM consists of a series of EAMs, each one tuned to give the correct chirp over a certain wavelength range. The bandwidth of the BEAM can be extended to cover the C-band (1535nm-1565nm). In addition, a semiconductor optical amplifier (SOA) is serially integrated in order to recover the total insertion loss. Details of the design, fabrication and testing of prototype BEAM chips operating at 10 Gb/s are reported. Quantum well intermixing technology is employed to realize the multiple bandgaps required for the prototype chips which are fabricated on semi-insulating InP substrates. Highlights of the operational characteristics of the BEAM chips include extinction ratios of up to 12 dB at 10 Gb/s and SOA gains of 20 dB.
Quantum well intermixing (QWI) can bring considerable benefits to the reliability and performance of high power laser diodes by intermixing the facet regions of the device to increase the band-gap and hence eliminate absorption, avoiding catastrophic optical damage (COD). The non-absorbing mirror (NAM) regions of the laser cavity can be up to ~20% of the cavity length, giving an additional benefit on cleave tolerances, to fabricate very large element arrays of high power, individually addressable, single mode lasers. As a consequence, large arrays of single mode lasers can bring additional benefits for packaging in terms of hybrization and integration into an optics system. Our QWI techniques have been applied to a range of material systems, including GaAs/AlGaAs, (Al)GaAsP/AlGaAs and InGaAs/GaAs.
Monolithic colliding pulse mode-locked (CPM) lasers operating at 1.5 +m and 36 GHz repetition frequency were fabricated on semi-insulating substrates. An RF electrical signal at a subharmonic frequency was injected into the saturable absorber at various injected RF power levels, and both the phase noise and timing jitter were characterised. Under fundamental hybrid mode-locking (FH-ML) case, the worst-case timing jitter was reduced from 4.8 ps to 0.69 ps with an injected RF power of +8 dBm. For the second order and third order subharmonic hybrid mode-locking (SH-ML) cases, the timing jitter was reduced to 0.32 ps and 0.45 ps respectively with an injected RF power of +15 dBm. For both the SH-ML cases, the amplitude modulations imposed by the subharmonic driving frequencies were found to be very small.
A novel technique for quantum well intermixing is demonstrated which has proven to be a reliable means for obtaining post-growth shifts in the band edge of a wide range of III-V material systems. The techniques relies upon the generation of point defects via plasma induced damage during the deposition of sputtered silica, and provides a simple and reliable process for the fabrication of both wavelength tuned lasers and monolithically integrated devices. Wavelength tuned board area oxide stripe lasers are demonstrated in InGaAs-InAlGaAs, InGaAs-InGaAsP, and GaInP- AlInP quantum well systems, and it is shown that low absorption losses are obtained after intermixing. Oxide stripe lasers with integrated slab waveguides have also enabled the production of a narrow single lobed far field pattern in both InGaAs-InAlGaAs, and GaInP-AlGaInP devices. Extended cavity ridge waveguide lasers operating at 1.5 micrometers are demonstrated with low loss waveguides, and it is shown that this loss is limited only by free carrier absorption in the waveguide cladding layers. In addition, the operation of intermixed multi-mode interference coupler lasers is demonstrated, where four GaAs-AlGaAs laser amplifiers are monolithically integrated to produce high output powers of 180 mW in a single fundamental mode. The results illustrate that the technique can routinely be used to fabricate low los optical interconnects and offers a very promising route toward photonic integration.
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