Transparent conducting Fluorine-doped tin oxide (FTO) thin films were deposited on glass substrates by pulsed DC
magnetron sputtering from cost saving metal targets. We observed lower resistivity and higher average transmittance in
the visible range after the application of various post heating treatments. The electrical and optical properties of FTO
films were investigated. When the annealing temperature is 400°C in air, the average transmittance is 79.79% with the
lowest resistivity of 1.38×10-3 Ω-cm, carrier density of 2.27×1020 cm-3 and mobility of 20 cm2/ V-s. When the annealing
temperature is 400°Cin a H2 5%+N2 95% atmosphere, the average transmittance is 79.75 % with the lowest resistivity of
1.26×10-3 Ω-cm, carrier density of 2.17×1020 cm-3 and mobility of 22.8 cm2/ V-s. When the annealing temperature is 350 °C in vacuum, the average transmittance is 80.48% with the lowest resistivity of 1.23×10-3 Ω-cm, carrier density of
4.40×1020 cm-3 and mobility of 11.6 cm2/ V-s.
Oblique deposition of lanthanum fluoride thin films was prepared by thermal resistance evaporation. The characteristics (including microstructure, coefficient of tangent rule, birefringence at 193nm and stress) of lanthanum fluoride thin films of have been investigated. The deposition angles increased from 20 to 70 degree, the coefficient of tangent rule decreased from 0.7 to 0.37. When the deposition angles larger than 60 degree, the coefficient held a constant, 0.37. The refractive index at 193nm of oblique deposition films decreased with the deposition angles was larger than 40 degree. The residual stress of films achieved the minimum value at 20-degree deposition angle.
Aluminum fluoride thin films have been deposited by magnetron sputtering of aluminum target with CF4 , or CF4 mixed 5% O2 as working gas. To obtain low optical loss and high packing density, the films were investigated under different sputtering power and substrate temperatures. Their optical properties (including the transmittance, refractive index, and extinction coefficient) in the UV range and microstructure (including the cross section morphology, surface roughness, and crystallization) have been studied. AlF3 thin films deposited at low temperature and low sputtering power have better optical quality. The extinction coefficient of AlF3 thin films coated by 25W with CF4 mixed 5% O2 as working gas is smaller than 6.5×10-4 in the wavelength range of 190nm to 300nm