Critical dimension uniformity (CDU) control using dose correction is well established and has relied on traditional polynomial models like Zernike and Legendre for a long time. As process margins are shrinking and CD (and CDU) control becomes a significant contributor to edge placement error (EPE), the dose correction models need to be enhanced to represent the systematic behavior of the fingerprints more precisely. In this paper we show that many CD signatures over the exposure field or over the wafer cannot be corrected efficiently using classical polynomials. As the CD signatures can come from a variety of processes like etch, CVD, polish, or deposition, a flexible model approach is required. Furthermore, making the right decision when choosing the correct model order of the classical polynomial based model is complicated as we need to handle the balance between the degrees of freedom and minimizing the residuals. With this problem statement in mind, we introduce a novel radial basis function (RBF) modeling approach for dose corrections that can correct a wide range of signatures. The new modeling approach is verified on real CD signatures on product, reducing CDU significantly. Additionally, we demonstrate that this approach can make the life of the engineers easy again, as there are no prior decisions about model type and order needed.
In this paper, the rAIMTM (robust AIM) overlay target was investigated in terms of the stability versus the POR AIM® (Advanced Imaging Metrology) target used for imaging-based overlay (IBO) measurement at after development inspection (ADI). The targets were designed using KLA’s MTD AcuRate™, metrology target design software that performs simulations based on the optical properties related to relative permittivity and permeability about the material of each of the layers. Using advanced device layers, we studied the performance of the POR AIM target versus the newly designed rAIM target for imaging-based overlay measurements. For each target, we quantified the optical contrast, kernel signal, correctable modeled terms, total measurement uncertainty (TMU), and overlay (OVL) residuals from the modeled data through various wavelengths inside the Moiré effect regime in the case of rAIM. We demonstrate that there is an OVL measurement performance improvement using the rAIM target versus the POR AIM target. The measured optical properties of the rAIM target and comparison to the POR AIM target will be presented.
Overlay metrology plays a significant role in process and yield control for integrated circuit (IC) manufacturing. As the On-Product Overlay (OPO) in advance nodes is reduced to a few nanometers, a very small margin is left for measurement inaccuracy. We introduce a multi-wavelength (spectral) analysis and measurement method, capable of characterizing overlay inaccuracy signatures on the wafer, and quantifying and removing the inaccuracy portion of the overlay measurement, resulting in a more accurate measurement, better process control, and yield enhancement. This method was applied to SK hynix’s advanced process production wafers, demonstrating an enhancement in accuracy over single-wavelength based overlay measurements.
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