Vibration levels in MET5 exposures were reduced from 1.5 nm RMS to 0.8 nm RMS by tuning the vibration isolation system and removing non-compliant hardware. Frequency doubling exposures were improved by replacing the Fourier synthesis pupil scanner mirror. Focus-exposure-matrix outliers have been solved by patching a bug in the control software. 9 nm half-pitch lines and 8 nm half-pitch lines were printed in 11 nm thick MOx resist.
A 0.5-NA extreme ultraviolet micro-field exposure tool has been installed and commissioned at beamline 220.127.116.11 of the Advanced Light Source synchrotron facility at Lawrence Berkeley National Laboratory. Commissioning has demonstrated a patterning resolution of 13 nm half-pitch with annular 0.35 – 0.55 illumination; a patterning resolution of 8 nm half-pitch with annular 0.1 – 0.2 illumination; critical dimension (CD) uniformity of 0.7 nm 1σ on 16 nm nominal CD across 80% of the 200 um x 30 um aberration corrected field of view; aerial image vibration relative to the wafer of 0.75 nn RMS and focus control and focus stepping better than 15 nm.