MOCVD technology has widely grown compound semiconductors for various applications, like Power/RF GaN and micro-LEDs. Precise control of wafer uniformity, defect density, and run-to-run consistency is essential for optimal results and reducing COO.
High-speed rotation vertical reactors, with uniform deposition capabilities, enable a wide process window. Implementing these in a single wafer configuration enhances film uniformity through concentric temperature and flow patterns. The Propel® MOCVD 300mm single wafer reactor made 300mm semiconductor fabrication accessible to the nitride material system, critical for RF and micro-LEDs.
This presentation covers latest Propel® 300mm MOCVD single wafer reactor advancements, including uniformity, repeatability, crystal quality for GaN/Si, GaN HEMT structure characterization, and GaN on Si LED wavelength uniformity. We'll discuss recent progress in red InGaN LED performance on 6” sapphire and 8” Si wafers, highlighting how Propel® MOCVD enhances high indium composition materials with Turbodisc® single wafer reactor technology.
MicroLEDs are making rapid progress as the next generation display technology due to high brightness, higher power efficiency and better contrast as compared to existing LCD and OLED based display technologies. MicroLEDs are being introduced into large displays and smart watches and are expected to penetrate other display segments including those for AR/VR applications within the next five years. The MOCVD technology needed for GaN based microLEDs must deliver on the industry’s stringent performance requirements of material quality, uniformity and low defectivity while reducing costs via high throughput, yield, and low operating expenses. A large operating process space (in terms of pressure, temperature, and growth rates) is needed for optimization of device stacks, with excellent boundary layer control over the full process range. In this talk, we discuss the latest status of Gallium Nitride based epitaxy for microLEDs using single wafer deposition technology.
In this presentation, we will discuss the requirements for Red microLEDs for advanced displays, the corresponding MOCVD Epitaxy capability needs,and share Veeco’s recent learnings.
Veeco MOCVD solutions are capable of supporting multiple substrates (GaAs, InP, sapphire, Si), and offer seamless transition to larger substrate sizes. For 6” GaAs red micro LED, Lumina® has demonstrated total population wavelength yield of >95% in 3 nm bin with defectivity <0.5 / cm2 @ >2um and 25% higher throughput than other platforms. For 6” sapphire miniLED, EPIK® has demonstrated within wafer wavelength 1sigma uniformity of 0.68nm (blue) / 1.24nm (green). For microLED on 200mm and 300mm silicon, Veeco has developed Propel® single wafer reactor for best in-class uniformity. Details of the technology and current data will be discussed.
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