A mesa-type normal incidence separate-absorption-charge-multiplication (SACM) Ge0.95Sn0.05/Si avalanche photodiode (APD) was fabricated. The 60-μm-diameter avalanche photodiode achieved a responsivity of ~5A/W (gain=24) and ~3.1A/W (gain=20) at 98% breakdown voltage (-14.2V) under 1310nm and 1550nm illumination respectively with a low dark current of 10μA. The −3 dB bandwidth for a 60-μm-diameter APD is about 1-1.25GHz for gains from 5 to 20, resulting in a gain-bandwidth product of 25GHz for a C-band communication wavelength of 1550nm.
A circular slit-groove surface plasmon polaritons (SPPs) launcher surrounding a photodetector is employed theoretically
to enhance the photocurrent of a typical Si-Ge photodetectors operating at telecommunication frequency regime. The slit
and grooves are designed such that the SPPs are focused at the center of the absorption layer of the photodetector to
result in additional electric current. Phase difference approach is applied to lead constructive interference between the
incident light impinging from the top and the SPPs propagating toward the photodetector. Simulation result proves the
interference and periodic behavior is observed. Finally the period of the groove, slit-groove distance, and slitphotodetector
distance is determined via simulation. Furthermore it was shown that photocurrent increases by
approximately 13-fold when the SPPs are introduced.
A Ge-on-SOI uni-traveling carrier (UTC) photodetector was reported for high-power high-speed applications. The performances, in terms of dark-current, photocurrent responsivity and 3-dB bandwidth, were characterized for analog and coherent communications applications. The responsivity was 0.18 A/W at 1550 nm. The detector with a 40μmdiameter demonstrated an optical bandwidth of 2.72 GHz at -5V for 1550nm. The -1dB compression photocurrent at 1 GHz under -7V for 40μm-diameter device was about 16.24mA, the RF output power came to be 4.6 dBmw.
Three types of Si-based photodetectors (PD) operating at long wavelength were introduced: the
strained SiGe/Si multi-quantum-wells PD and Ge/Si islands PD with resonant cavity enhanced (RCE)
structure, Ge p-i-n PD on silicon and SOI, Ge/Si avalanche photodetectors (APDs) with separate
absorption, charge and multiplication (SACM) structure. The strained SiGe/Si MQW RCE PD and
Ge/Si islands RCE PD has a threefold enhanced responsivity compared with the conventional PD
without a resonant cavity. The Ge p-i-n PD on SOI has a responsivity of 0.65 A/W at 1.31μm and 0.32
A/W at 1.55μm. The 3dB bandwidth is 13.3GHz at reverse bias of 3 V. The Ge/Si SACM APD
operating at 1310 nm have a responsivity of 4.4A/W (with a gain of 8.8) biased at 90% of break
voltage.
The high quality Ge islands material with 1.55μm photo-response grown on SOI substrate is reported. Due to the modulation of the cavity formed by the mirrors at the surface and the buried SiO2 interface, seven sharp and strong peaks with narrow linewidth are found. And a 1.55 μm Ge islands resonant-cavity-enhanced (RCE) detector with narrowband was fabricated by a simple method. The bottom mirror was deposited in the hole formed by anisotropically etching in a basic solution from the backside of the sample with the buried SiO2 layer in silicon-on-insulator substrate as the etch-stop layer. Reflectivity spectrum indicates that the mirror deposited in the hole has a reflectivity as high as 99% in the range of 1.2~1.65 μm. The peak responsivity of the RCE detector at 1543.8 nm is 0.028 mA/W and a full width at half maximum of 5 nm is obtained. Compared with the conventional p-i-n photodetector, the responsivity of RCE detector has a nearly threefold enhancement.
In this paper we report the fabrication of 1.3µm Si-based MEMS tunable optical filter, by surface micromaching. Through wet etching of polyimide sacrificial layer, a tunable Fabry-Perot filter was successfully fabricated. We make the capacitance measurement of the prototype device, compare the experimental curve with the theoretical one, and explain the difference between them.
We show that the observed temperature dependence of the photoluminescence(PL) features can be consistently explained in terms of thermally activated carrier transfer processes in a multilayer structure of the self-organized Ge/Si(001) islands. The type II (electron confinement in Si) behavior of the Ge/Si islands is verified. With elevated temperature, the thermally activated electrons and holes enter the Ge islands from the Si and from the wetting layer (WL), respectively. An involvement of the type I (spatially direct) into type II (spatially indirect) recombination transition takes place at a high temperature.
Si-based SiGe/Si strained MQW long-wavelength photodetectors (PD) with cycle type (Ring Shape) waveguide (CWG) and resonant-cavity-enhanced (RCE) structure have been investigated for the first time for improving the quantum efficiency and response time. The results show that the responsivities are higher than that of conventional PD with a same Ge content reported previously. In addition, RCE-PD has an obvious narrow band response with FWHM less than 6nm.
We report one top-illumination and one bottom-illumination SiGe/Si multiple quantum-well (MQW) resonant-cavity-enhanced (RCE) photodetector fabricated on a separation-by-implanted-oxygen (SIMOX) wafer operating near 1300 nm. The buried oxygen layer in SIMOX is used as a mirror to form a vertical cavity with the silicon dioxide/silicon Bragg reflector deposited on the top surface. A peak responsivity with a reverse bias of 5 V is measured 10.2 mA/W at 1285 nm, a full width at half maximum of 25 nm for the top-illumination RCE photodetector, 19 mA/W at 1305 nm, and a full width at half maximum of 14 nm for the bottom-illumination one. The external quantum efficiency of the bottom- illumination RCE photodetector is up to 2.9% at 1305 nm, with a reverse bias of 25 V. The responsivity of the bottom-illumination RCE photodetector is improved by two-fold compared with that of the top-illumination one.
In this paper, a graded Si1-xGex buffer and thereafter the Si0.8Ge0.2 uniform layer were grown at a little lower temperature to keep the surface smooth, which will provide the gliding dislocations a wider channel and less low energy nucleation sites on the surface. Therefore, the dislocation density may be reduced. However, the motion of the existing threading dislocations cannot retain equilibrium at lower temperature, strain will accumulate and be in favor of the nucleation of dislocation. In situ annealing was used to reduce the residual strain in the sample during the low-temperature growth of SiGe. A fully relaxed Si0.8Ge0.2 layer was obtained with the surface dislocation dnesity of 3x105cm-2.
Resonant-cavity-enhanced (RCE) photodetectors have been demonstrated to be able to improve the bandwidth-efficiency product. We report one top-illumination and one bottom- illumination SiGe/Si multiple quantum-well (MQW) RCE photodetectors fabricated on a separation-by-implanted-oxygen (SIMOX) wafer operating near 1300 nm. The buried oxide layer in SIMOX is used as a mirror to form a vertical cavity with the silicon dioxide/silicon Bragg reflector deposited on the top surface. A peak responsivity with a reverse bias of 5 V is measured 10.2 mA/W at 1285 nm, and a full-width at half maximum of 25 nm for the top-illumination RCE photodetector, and 19 mA/W at 1305 nm, and a full-width at half maximum of 14 nm for the bottom-illumination one. The external quantum efficiency of the bottom-illumination RCE photodetector is up to 2.9% at 1305 nm with a reverse bias of 25 V. The responsivity of the bottom-illumination RCE photodetector is improved by two-fold compared with that of the top- illumination one.
A normal-incident SiGe/Si multiple quantum wells photodetector was reported. The structure and fabrication process of the photodetector were introduced. The photocurrent spectra measurement showed that the response spectra was expanded to 1.3 micrometers wavelength. The quantum efficiency of the photodetector was 0.1 percent at 1.3 micrometers and 20 percent at 0.95 micrometers .
The deposition rate and refractive index for a-Si(amorphous silicon) and SiO2 grown by PECVD were studied under different pressure, power and proportion of reactant source gases. a-Si/SiO2 MQW(multi-quantum well) with high quality was deposited under suitable conditions, in which the thickness of the a-Si layers is several nanometers. The sample of a-Si/SiO2 MQW was crystallized by laser annealing. Because of the confinement of the SiO2 layers, crystalline grains were formed during the a-Si layers were being crystallized. The size of the crystalline grains were not more than the thickness of the a-Si layers. The a-Si layers were crystallized to be nanometer crystalline silicon (nc-Si), therefore, nc-Si/SiO2 MQW was formed. For the a-Si/SiO2 MQW with 4.0 nm a-Si wells separated by 5 nm SiO2 barriers, most of the a-Si were crystallized to silicon grains after laser annealing, and the size of the grains is 3.8 nm. Strong photoluminescence with three peaks from the nc-Si/SiO2 MQW was detected at 10 K. The wavelength of the peaks were 810 nm, 825 nm and 845 nm, respectively.
GaP/Si is a promoting heterostructure for Si-based optoelectronic devices since lattice constants of GaP and Si are so closed that they can match with each other. GaP was successfully grow on (100) Si subtracts by Gas-Source Molecular Beam Epitaxy (GS-MBE) in the study. The GaP/Si heterostructure was characterized by X-ray double crystal diffraction, Auger electron spectrograph, X-ray photonic spectrograph and photoluminescence (PL) measurements. The results showed that the epitaxial GaP layers are single crystalline, in which a (parallel) and a (perpendicular) are 0.54322 and 0.54625 nm, respectively. The peaks in PL spectra of GaP epitaxial layer grown on Si are 650, 627 and 640 nm, respectively. The study demonstrated that GaP/Si is a kind of lattice matched heterostructures and will be a promoting materials for future integrated photonics.
Si1-yCy alloys with carbon composition of 0.5 at% were successfully grown on n-Si(100) substrate by solid phase epitaxy recrystallization. The result was presented in this paper. With the help of the SiO2 capping layer, rather uniform carbon profile in amorphous Si layer was obtained by dual-energy implantation. Since ion-flow was small and implantation time was long enough, the emergency of (beta) -SiC was avoided and the dynamic annealing effect was depressed. The pre-amorphization of the Si substrate increased the fraction of the substitutions carbon and the two-step annealing reduced point defects. As a result, Si1-yCy alloys with high quality was recrystallized on Si substrate.
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