The objective of this study is to achieve a high sensitive infrared detector by fabricating highly ordered array of indium-antimony (In-Sb) nanowires which is a semiconductor material. The approach is to investigate an infrared detector with arrayed nanowires which can transport signals in one dimension to obtain high efficiency and sensitivity compared with In-Sb by using traditional thin film fabrications. This research expects to provide an infrared detector by fabricating III-V alloy nanowires to highly improve the resolution of infrared signal. To develop scaled-up functional devices, highly ordered nanowire arrays are essential building blocks. Many candidate materials (metals, alloys, oxides and semiconductors) have been studied for various potential applications in nanotechnology and have shown some promising results. The solid metallic nanowires have been exploited for a wide range of applications to take the advantages of their large length/diameter aspect ratio. Further development to synthesize nanowires efficiently at lower cost is the direction for manufacturing next generation nanodevices. In this study, various diameters of ordering nanowires, from 10 nm to 500 nm, were fabricated and evaluated the performance of the sensitivity of infrared detection. Moreover, a 1 inch plate, which can be regarded as a device, with nanowires array was fabricated by designing a new type of processing chamber.
The cesium iodide (CsI) scintillator can converts incident X-ray into visible light with very high conversion efficiency of optical photons. The incident energy, response time, film thickness, sample size, and spatial resolution require in engineering and medical applications are difference. A smooth and flat surface and single crystal structure of CsI enhance the X-ray to visible light conversion. However, the regular CsI is soft and extremely hygroscopic; it is very difficult to polish to obtain a smooth and optical flat plane. In order to obtain a good quality of CsI scintillator for X-ray application we used an ordering channel as template and formed sub-micron CsI wire in the template. The fabrication process including: (1) Ordering structure of nano or sub-micron channels were made by an anodization method; (2) fill CsI scintillated film on the channel by CsI solution, (3) fill CsI melt into the channel formation single crystal of sub-micron crystalline scintillator after solidification. The non-vacuum processes of anodization and solidication methods were used for the sub-micron CsI scintillator column formation that is cost down the scintillator fabrication. In addition, through the fabrication method, the ordering structure scintillator of scintillator can be made by anodic treatment and die casting technology with low cost and rapid production; moreover, the film oxidized metal tubes of the tubular template can be further manufactured to nano tubes by adjusting electrolyte composition, electrolysis voltage, and processing time of anodic treatment, and the aperture size, the thickness and the vessel density of the nano tube can be controlled and ranged from 10 nm to 500 nm, 0.1 μm to 1000 μm, and hundred million to thousand billion tube/cm2, respectively.
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