Dr. Cong Que Dinh Profile

Dr. Cong Que Dinh

at Tokyo Electron Kyushu Ltd

SPIE Involvement:

Author

Publications (21)

Proceedings Article | 10 April 2024 Poster

Poster

Latest advances in EUV patterning for preparation of high numerical aperture EUV

Soichiro Okada, Arnaud Dauendorffer, Yuhei Kuwahara, Cong Que Dinh, Ken Ando, Atsushi Tsuboi, Kathleen Nafus, Nobuyuki Fukui, Philippe Foubert, Danilo De Simone

Proceedings Volume 12957, 129571W (2024) https://doi.org/10.1117/12.3010713

KEYWORDS: Extreme ultraviolet, Optical lithography, Etching, Plasma etching, Photoresist materials, Critical dimension metrology, Plasma, Metal oxides, Lithography, High volume manufacturing

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Proceedings Article | 10 April 2024 Poster

Poster

Coater/developer-based patterning techniques to improve tight pitches towards high-NA EUV

Kanzo Kato, Lior Huli, Steven Grzeskowiak, Alexandra Krawicz, Eric Liu, Akiteru Ko, Satoru Shimura, Shinichiro Kawakami, Cong Dinh, Takahiro Kitano, Seiji Nagahara, Luciana Meli, Indira Seshadri, Martin Burkhardt, Karen Petrillo

Proceedings Volume PC12953, PC129530Y (2024) https://doi.org/10.1117/12.3010880

KEYWORDS: Yield improvement, Optical lithography, Extreme ultraviolet, Extreme ultraviolet lithography, Etching, Lithography, Tin, Semiconductors, Integrated circuits, Inspection

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Proceedings Article | 9 April 2024 Poster + Paper

Poster + Paper

Roughness improvement by post-development treatment of CAR for high-NA EUV lithography

Kayoko Cho, Hikari Tomori, Cong Que Dinh, Seiji Nagahara, Arisa Hara, Seiji Fujimoto, Arnaud Dauendorffer, Lior Huli, Kanzo Kato, Nathan Antonovich, Makoto Muramatsu

Proceedings Volume 12957, 129571Q (2024) https://doi.org/10.1117/12.3010231

KEYWORDS: Chemically amplified resists, Extreme ultraviolet, Quenching, Extreme ultraviolet lithography, Line width roughness, Etching, Line edge roughness, Stochastic processes, High volume manufacturing, Semiconductors

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Proceedings Article | 9 April 2024 Presentation + Paper

Presentation + Paper

Advanced processes in metal-oxide resists for high-NA EUV lithography

Cong Que Dinh, Seiji Nagahara, Kayoko Cho, Hikari Tomori, Yuhei Kuwahara, Tomoya Onitsuka, Soichiro Okada, Shinichiro Kawakami, Arisa Hara, Seiji Fujimoto, Makoto Muramatsu, Reiko Tsuzuki, Xiang Liu, Arame Thiam, Yannick Feurprier, Kathleen Nafus, Michael Carcasi, Lior Huli, Kanzo Kato, Alexandra Krawicz, Michael Kocsis, Peter De Schepper, Lauren McQuade, Kazuki Kasahara, Jara Garcia Santaclara, Rik Hoefnagels, Bruno La Fontaine, Ryan Miyakawa, Chris Anderson, Patrick Naulleau

Proceedings Volume 12957, 1295705 (2024) https://doi.org/10.1117/12.3010207

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Inspection, Tin, Lithography, Etching

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One of the key steps in the pattern formation chain of extreme ultraviolet (EUV) lithography is the development process to resolve the resist pattern after EUV exposure. The traditional development process might be insufficient to achieve the requirements of ultra-high-resolution features with low defect levels. The aim of this paper is to establish a process to achieve a good roughness, a low defectivity at a low EUV dose, and capability for extremely-high-resolution for high numerical aperture (NA) and hyper-NA EUV lithography. A new development method named ESPERT™ (Enhanced Sensitivity develoPER Technology™) has been introduced to improve the performance of metal oxide-resists (MOR). ESPERT™ as a chemical super resolution technique effectively apodized the MOR chemical image, improving chemical gradient (higher exposure latitude (EL)) and reducing scums (fewer bridge defects). This new development method can also keep the resist profile vertical to mitigate the break defects. The performances of the conventional development and ESPERT™ were evaluated and compared using 0.33 NA EUV, 0.5 NA EUV, and electron beam (EB) exposures, for all line-space (LS), contact hole (CH), and pillar (PL) patterns. Using 0.33 NA EUV scanners on LS patterns, both bridge and break defects were confirmed to be reduced for all 32-nm-pitch, 28-nm-pitch, 26-nm-pitch LS patterns while reducing the EUV dose to size (DtS). In the electrical yield (1 meter length) test of breaks/bridges of 26-nm pitch structures, ESPERT™ reduced EUV dose while its combo yield was almost 100% over a wide dose range of 20mJ/cm². For CH patterns, in the case of 32-nm-pitch AEI (after etch inspection), EL was increased 7.5% up to 22.5%, while failure free latitude (FFL) was widened from 1-nm to 4-nm. A 16-nm-pitch LS pattern was successfully printed with 0.5 NA tool, while a 16-nm-pitch PL and an 18-nm-pitch CH patterns were also achieved with an EB lithography by ESPERT™. With ESPERT™, there was no pillar collapse observed for 12-nm half-pitch PL by 0.5 NA and 8-nm half-pitch PL by EB. With all the advantages of having a high exposure sensitivity, a low defectivity, and an extremely-high-resolution capability, this advanced development method is expected be a solution for high-NA EUV towards hyper-NA EUV lithography.

Proceedings Article | 28 November 2023 Presentation + Paper

Presentation + Paper

Coater/developer-based patterning techniques to achieve tight pitches with 0.33 NA single exposure

Kanzo Kato, Seiji Nagahara, Lior Huli, Nathan Antonovich, David Hetzer, Steven Grzeskowiak, Alexandra Krawicz, Eric Liu, Nayoung Bae, Akiteru Ko, Satoru Shimura, Shinichiro Kawakami, Dinh Conque, Takahiro Kitano, Luciana Meli, Indira Seshadri, Martin Burkhardt, Karen Petrillo

Proceedings Volume PC12750, PC127500G (2023) https://doi.org/10.1117/12.2687901

KEYWORDS: Optical lithography, Extreme ultraviolet lithography, Lithography, Semiconductors, Integrated circuits, Industry, Fiber optic illuminators, Fabrication, Etching

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Proceedings Article | 22 November 2023 Poster

Poster

Holistic litho-etch approach towards high NA EUV challenges

Soichiro Okada, Arnaud Dauendorffer, Yuhei Kuwahara, Satoru Shimura, Philippe Foubert, Danilo De Simone, Cong Que Dinh, Ken Ando, Atsushi Tsuboi, Nobuyuki Fukui, Arame Thiam, Yannick Feurprier, Kathleen Nafus

Proceedings Volume PC12750, PC1275011 (2023) https://doi.org/10.1117/12.2687568

KEYWORDS: Extreme ultraviolet, Etching, Plasma etching, Photoresist materials, Optical lithography, Critical dimension metrology, Plasma, Metal oxides, Lithography, High volume manufacturing

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Proceedings Article | 21 November 2023 Presentation + Paper

Presentation + Paper

Advanced development for contact-holes of metal-oxide resists

Cong Que Dinh, Seiji Nagahara, Kanzo Kato, Shinichiro Kawakami, Yuhei Kuwahara, Soichiro Okada, Kayoko Cho, Hikari Tomori, Junji Nakamura, Shoichi Terada, Makoto Muramatsu, Alexandra Krawicz, Kathleen McInerney, Nathan Antonovich, Lior Huli

Proceedings Volume 12750, 1275009 (2023) https://doi.org/10.1117/12.2687434

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Scanners, Photoresist processing, Metals

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One of the key steps in the pattern formation chain of extreme ultraviolet (EUV) lithography is the development process to resolve the resist pattern after EUV exposure. A simple traditional development process might be insufficient to clear the holes in contact-hole (CH) patterns and often causes missing hole defects around target-CD. In prior papers, a new development method named ESPERT™ (Enhanced Sensitivity develoPER Technology™) has been introduced to improve the performance of metal oxide-resists (MOR) for line/space (L/S) and pillar patterns. ESPERT™ as a chemical super resolution technique effectively apodized the MOR chemical image, improving chemical gradient and reducing scums. In this work, this development technique was optimised for CH patterns to reduce both the local CD uniformity (LCDU) and to reduce the levels of missing contact holes at a lower exposure dose. This is made possible thanks to the capability of the updated version of ESPERT™ that can effectively remove the scums (resist residues) inside CH to extend the missing hole defect margins. The high development contrast of the new development technique results also in a much higher exposure latitude. Using 0.33 NA EUV scanners on 36-nmpitch hexagonal patterns, the new development enhanced exposure latitude (EL), failure free latitude (FFL), and failure free dose ranges at both ADI (after development inspection) and AEI (after etch inspection) for two diverse types of MORs. For instance, in the case of the reference MOR developed by ESPERT™, CHs were nicely transferred to a TiN layer, even for small CD holes of 14.7 nm. If compared to the data by conventional development, using the new method, the EL was increased from 16.0% to 49.1%, the FFL was extended from 2 nm to 6 nm, and the failure free dose range was increased from 13.3% to 72.2%. It was also possible to have EUV dose-to-size (DtS) of 28 mJ/cm² with EL of 49.9% at ADI, using the new development. With all those advantages, this new development method is expected to be the solution for CH pattern formation of negative tone MORs in EUV lithography.

Proceedings Article | 1 May 2023 Poster + Paper

Poster + Paper

Recent advances in EUV patterning in preparation towards high-NA EUV

Seiji Nagahara, Arnaud Dauendorffer, Arame Thiam, Xiang Liu, Yuhei Kuwahara, Cong Que Dinh, Soichiro Okada, Shinichiro Kawakami, Hisashi Genjima, Noriaki Nagamine, Makoto Muramatsu, Satoru Shimura, Atsushi Tsuboi, Kathleen Nafus, Yannick Feurprier, Marc Demand, Rajesh Ramaneti, Philippe Foubert, Danilo De Simone, Geert Vendenberghe

Proceedings Volume 12498, 124981G (2023) https://doi.org/10.1117/12.2657432

KEYWORDS: Optical lithography, Extreme ultraviolet, Extreme ultraviolet lithography, Interfaces, Etching, Coating thickness, Lithography, Stochastic processes, Critical dimension metrology

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Proceedings Article | 1 May 2023 Paper

Paper

Advanced development methods for high-NA EUV lithography

Cong Que Dinh, Seiji Nagahara, Yuhei Kuwahara, Arnaud Dauendorffer, Soichiro Okada, Seiji Fujimoto, Shinichiro Kawakami, Satoru Shimura, Makoto Muramatsu, Kayoko Cho, Xiang Liu, Kathleen Nafus, Michael Carcasi, Ankur Agarwal, Mark Somervell, Lior Huli, Kanzo Kato, Michael Kocsis, Peter De Schepper, Stephen Meyers, Lauren McQuade, Kazuki Kasahara, Jara Garcia Santaclara, Rik Hoefnagels, Chris Anderson, Patrick Naulleau

Proceedings Volume 12498, 1249806 (2023) https://doi.org/10.1117/12.2655928

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Line width roughness, Line edge roughness, Lithography, Etching

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One of the key steps in the pattern formation chain of (extreme ultraviolet) EUV lithography is the development process to resolve the resist pattern after EUV exposure. A simple traditional development process might not be sufficient to achieve the requirements of an ultra-high-resolution feature with low defect levels in high numerical aperture (NA) EUV lithography. In our previous literature, a new development method named ESPERT^TM (Enhanced Sensitivity develoPER Technology^TM) has been introduced to improve the performance of metal oxide resists (MOR) for 0.33 NA EUV lithography by breaking the dose-roughness trade-off. In this work, this development technique was optimised for high-NA lithography to not only keep the advantages of previous ESPERT^TM version, but also reduce the defect levels at a higher EUV sensitivity. This is made possible thanks to the capability of the new version of ESPERT^TM that can easily remove the residue (undeveloped resist) at low exposure dose area to enhance the developing contrast. Using 0.33 NA EUV scanners at imec on 16-nm half-pitch (HP) line/space (L/S) patterns, with the new development method, EUV dose-to-size (DtS) was reduced roughly 16%, and total after-development-inspection (ADI) defects was reduced by a factor of approximately 7, simultaneously. In another condition, DtS was reduced from 44.2 to 28.4 mJ/cm² (an improvement of 36%), while the number of after-etch-inspection (AEI) single-bridge defects was reduced by half, simultaneously. Using the 0.5 NA exposure tool at Lawrence Berkeley National Laboratory with this new development method, the exposure sensitivity and line-width-roughness (LWR) were both improved by 30% and 21%, respectively. An 8-nm-HP L/S pattern was also successfully printed by this high NA tool. Using a 150 kV electron-beam (EB) lithography system, a 12-nm-HP of pillars was successfully printed on a 22-nm-thick MOR resist with ESPERT^TM. With all the advantages of having a high exposure sensitivity, a low defectivity, and an ultra-high-resolution capability, this new development method is expected to be a solution for high-NA EUV lithography.

Proceedings Article | 1 May 2023 Poster + Paper

Poster + Paper

Establishment of new process technology for EUV lithography

Yuhei Kuwahara, Shinichiro Kawakami, Kanzo Kato, Soichiro Okada, Yuya Kamei, Tomoya Onitsuka, Takashi Yamauchi, Nanoka Miyahara, Congque Dinh, Lior Huli, Satoru Shimura

Proceedings Volume 12498, 124981F (2023) https://doi.org/10.1117/12.2657076

KEYWORDS: Line width roughness, Extreme ultraviolet lithography, Extreme ultraviolet, Line edge roughness, Etching, Solubility, High volume manufacturing, Silicon carbide, Silicon, Scanning electron microscopy

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Proceedings Article | 30 April 2023 Presentation

Presentation

Challenges and innovations in EUV patterning: lithography and etch outlook

Eric Liu, Akiteru Ko, Sophie Thibaut, Katie Lutker-Lee, Steven Grzeskowiak, Alexandra Krawicz, Christopher Cole, Hamed Hajibabaei, Sergey Voronin, Nayoung Bae, Angelique Raley, Lior Huli, Kanzo Kato, David Hetzer, Kathleen Nafus, Seiji Fujimoto, Seiji Nagahara, Satoru Shimura, Shinichiro Kawakami, Congque Dinh, Yuhei Kuwahara, Shigeru Tahara, Masanobu Honda, Tetsuya Nishizuka, Peter Biolsi, Hiromasa Mochiki

Proceedings Volume PC12499, PC124990H (2023) https://doi.org/10.1117/12.2659720

KEYWORDS: Etching, Optical lithography, Lithography, Extreme ultraviolet, Plasma etching, Plasma, Transistors, Semiconducting wafers, Photoresist processing, Photochemistry

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Proceedings Article | 31 October 2022 Poster

Poster

Coater/developer-based techniques to improve high-resolution EUV patterning

Kanzo Kato, Lior Huli, David Hetzer, Steven Grzeskowiak, Alexandra Krawicz, Nayoung Bae, Satoru Shimura, Shinichiro Kawakami, Yuhei Kuwahara, Cong Que Dinh, Soichiro Okada, Takahiro Kitano, Seiji Nagahara, Akihiro Sonoda

Proceedings Volume PC12292, PC122920Q (2022) https://doi.org/10.1117/12.2642878

KEYWORDS: Extreme ultraviolet, Optical lithography, Lithography, Extreme ultraviolet lithography, Semiconductors, Oxides, Metals, Integrated circuits, Industrial chemicals, Etching

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Proceedings Article | 25 May 2022 Presentation + Paper

Presentation + Paper

Outlook for high-NA EUV patterning: a holistic patterning approach to address upcoming challenges

Angélique Raley, Lior Huli, Steven Grzeskowiak, Katie Lutker-Lee, Alexandra Krawicz, Yannick Feurprier, Eric Liu, Kanzo Kato, Kathleen Nafus, Arnaud Dauendorffer, Nayoung Bae, Josh LaRose, Andrew Metz, Dave Hetzer, Masanobu Honda, Tetsuya Nishizuka, Akiteru Ko, Soichiro Okada, Yasuyuki Ido, Tomoya Onitsuka, Shinichiro Kawakami, Seiji Fujimoto, Satoru Shimura, Cong Que Dinh, Makoto Muramatsu, Peter Biolsi, Hiromasa Mochiki, Seiji Nagahara

Proceedings Volume 12056, 120560A (2022) https://doi.org/10.1117/12.2613063

KEYWORDS: Plasma etching, Etching, Extreme ultraviolet, Optical lithography, Plasma, Focus stacking software, Semiconducting wafers, Photoresist processing, Extreme ultraviolet lithography, Silicon carbide

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Proceedings Article | 25 May 2022 Poster + Presentation + Paper

Poster + Presentation + Paper

Approaches to enable patterning of tight pitches towards high NA EUV

Hiroki Tadatomo, Arnaud Dauendorffer, Tomoya Onitsuka, Hisashi Genjima, Yasuyuki Ido, Soichiro Okada, Yuhei Kuwahara, Arisa Hara, Congque Dinh, Seiji Fujimoto, Shinichiro Kawakami, Makoto Muramatsu, Satoru Shimura, Kathleen Nafus, Noriaki Oikawa, Kenta Ono, Yannick Feurprier, Marc Demand, Ainhoa Romo Negreira, Seiji Nagahara, Blanco Victor, Philippe Foubert, Danilo De Simone

Proceedings Volume 12056, 120560F (2022) https://doi.org/10.1117/12.2614012

KEYWORDS: Etching, Optical lithography, Extreme ultraviolet, Bridges, Extreme ultraviolet lithography, Inspection, Image processing

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Extreme ultraviolet (EUV) lithography has been used for mass production for several years. Now the resolution limit of current 0.33 NA single exposure has been approaching. To enhance the resolution limit, high NA exposure tool has been developing. At the limit, not only the stochastic failures1, but also patterning trade-off has been becoming challenging. In this paper, to overcome the patterning trade-off of LS and CH, several approaches were demonstrated for both CAR and MOR. As for chemically amplified resist (CAR), to overcome the patterning trade-off of line and space, two different approaches were demonstrated. One was a developer rinse process optimization, and the other was a top deposition treatment during etching process. By using the two approaches, pitch 24 nm LS patterns were successfully transferred. As to CAR CH patterning, a new shrink technique during etch process was successfully tested for sub 15 nm hole patterning. No missing hole detected at 12 nm hole size by voltage contrast metrology. For tighter nodes, spin-on metal oxide resist (MOR) have been considering to be used because it offers a series of advantages. It has high sensitivity and resolution because of its high photon absorption and simple reaction mechanism. It also inherently has a higher etch resistance which enables resist thickness thinner and collapse margin higher. Spin-on process of MOR is expect to contribute high productivity which is essential for high volume manufacturing (HVM). Because defect reduction is one of the key points to enable MOR process for HVM, continuous investigation of defect mitigation has been done. For pitch 32 nm LS, the mitigation was confirmed by fine optimization with the combination of the etch process and the implementation of new under layers. As to pitch 28nm line and space, optimized illumination gave better defect process windows. Moreover, a new wet developer process was successfully proposed to prevent pitch 36 nm hexagonal pillars collapse during wet development with 25% higher EUV sensitivity.

Proceedings Article | 28 September 2021 Presentation

Presentation

Addressing EUV patterning challenges towards the limits of NA 0.33 EUV exposure

Arnaud Dauendorffer, Tomoya Onitsuka, Hiroki Tadatomo, Keisuke Yoshida, Takahiro Shiozawa, Hisashi Genjima, Noriaki Nagamine, Yuya Kamei, Soichiro Okada, Shinichiro Kawakami, Makoto Muramatsu, Satoru Shimura, Kathleen Nafus, Noriaki Oikawa, Yannick Feurprier, Marc Demand, Ainhoa Romo Negreira, Seiji Nagahara, Congque Dinh, Luka Kljucar, Danilo De Simone, Philippe Foubert

Proceedings Volume 11854, 118540B (2021) https://doi.org/10.1117/12.2600860

KEYWORDS: Extreme ultraviolet lithography, Optical lithography, Metals, Etching, Stochastic processes, Semiconductors, Semiconductor manufacturing, Resistance, Photomasks, Particles

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Proceedings Article | 22 February 2021 Presentation + Paper

Presentation + Paper

EUV resist performance enhancement by UV flood exposure for high NA EUV lithography

Cong Que Dinh, Seiji Nagahara, Keisuke Yoshida, Yoshihiro Kondo, Makoto Muramatsu, Kosuke Yoshihara, Ryo Shimada, Teruhiko Moriya, Kathleen Nafus, John Petersen, Danilo De Simone, Philippe Foubert, Geert Vandenberghe

Proceedings Volume 11612, 116120L (2021) https://doi.org/10.1117/12.2583922

KEYWORDS: Extreme ultraviolet lithography, Ultraviolet radiation, Floods, Extreme ultraviolet, Stochastic processes, Chemically amplified resists

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Proceedings Article | 30 March 2020 Presentation + Paper

Presentation + Paper

EUV resist chemical gradient enhancement by UV flood exposure for improvement in EUV resist resolution, process control, roughness, sensitivity, and stochastic defectivity

Seiji Nagahara, Cong Que Dinh, Keisuke Yoshida, Gosuke Shiraishi, Yoshihiro Kondo, Kosuke Yoshihara, Kathleen Nafus, John Petersen, Danilo De Simone, Philippe Foubert, Geert Vandenberghe, Hans-Jürgen Stock, Balint Meliorisz

Proceedings Volume 11326, 113260A (2020) https://doi.org/10.1117/12.2552166

KEYWORDS: Stochastic processes, Ultraviolet radiation, Extreme ultraviolet lithography, Photoresist processing, Extreme ultraviolet, Optical lithography, Absorption

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Proceedings Article | 8 April 2019 Paper

Paper

PSCAR optimization to reduce EUV resist roughness with sensitization using Resist Formulation Optimizer (RFO)

Seiji Nagahara, Cong Que Dinh, Gosuke Shiraishi, Yuya Kamei, Kathleen Nafus, Yoshihiro Kondo, Michael Carcasi, Yukie Minekawa, Hiroyuki Ide, Yuichi Yoshida, Kosuke Yoshihara, Ryo Shimada, Masaru Tomono, Kazuhiro Takeshita, Serge Biesemans, Hideo Nakashima, Danilo De Simone, John Petersen, Philippe Foubert, Peter De Bisschop, Geert Vandenberghe, Hans-Jürgen Stock, Balint Meliorisz

Proceedings Volume 10960, 109600A (2019) https://doi.org/10.1117/12.2515187

KEYWORDS: Stochastic processes, Calibration, Extreme ultraviolet, Line edge roughness, 3D modeling, Extreme ultraviolet lithography, Switching

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Proceedings Article | 26 March 2019 Paper

Paper

Calibrated PSCAR stochastic simulation

Cong Que Dinh, Seiji Nagahara, Gousuke Shiraishi, Yukie Minekawa, Yuya Kamei, Michael Carcasi, Hiroyuki Ide, Yoshihiro Kondo, Yuichi Yoshida, Kosuke Yoshihara, Ryo Shimada, Masaru Tomono, Teruhiko Moriya, Kazuhiro Takeshita, Kathleen Nafus, Serge Biesemans, John Petersen, Danilo De Simone, Philippe Foubert, Peter De Bisschop, Geert Vandenberghe, Hans-Jürgen Stock, Balint Meliorisz

Proceedings Volume 10957, 109571O (2019) https://doi.org/10.1117/12.2515183

KEYWORDS: Modeling and simulation, Calibration, Ultraviolet radiation, Extreme ultraviolet lithography, Stochastic processes, Data modeling, Line width roughness, Extreme ultraviolet, Scanning electron microscopy

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Proceedings Article | 24 April 2014 Paper

Paper

High-resist sensitization by pattern and flood combination lithography

Seiichi Tagawa, Akihiro Oshima, Satoshi Enomoto, C. Q. Dinh

Proceedings Volume 9048, 90481S (2014) https://doi.org/10.1117/12.2046790

KEYWORDS: Lithography, Floods, Extreme ultraviolet, Ultraviolet radiation, Extreme ultraviolet lithography, Picosecond phenomena, Light sources, Chemically amplified resists, Contamination, Ions

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Proceedings Article | 1 April 2013 Paper

Paper

Relation between sensitivity and resolution in polymer bound PAGs and polymer blend PAGs

Satoshi Enomoto, Tuan Nguyen Dang, Cong Que Dinh, Seiichi Tagawa

Proceedings Volume 8679, 867926 (2013) https://doi.org/10.1117/12.2011650

KEYWORDS: Polymers, Diffusion, Extreme ultraviolet, Lithography, Line width roughness, Extreme ultraviolet lithography, Optical lithography, Semiconducting wafers, Line edge roughness, Nanotechnology

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Showing 5 of 21 publications

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