Mr. Carsten Hartig Profile

Carsten Hartig

Principal Member Technical Staff at GLOBALFOUNDRIES Dresden Module One GmbH

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Author

Publications (20)

Proceedings Article | 26 May 2022 Paper

Virtual cross metrology: leveraging process sequence for improved process characterization

J. Andres Torres, Ivan Kissiov, Melody Tao, Graham Mueller, Stefan Schueler, Carsten Hartig, Richard Gardner, Srividya Jayaram

Proceedings Volume 12053, 120531B (2022) https://doi.org/10.1117/12.2614943

KEYWORDS: Process modeling, Process control, Metrology, Calibration, Semiconducting wafers, Neodymium, Error analysis, Control systems, Semiconductors, Machine learning

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Proceedings Article | 22 February 2021 Presentation + Paper

Virtual metrology: how to build the bridge between the different data sources

Stefan Schueler, Carsten Hartig, Andres Torres, Ivan Kissiov, Richard Gardner, Essam Mohamed, Srividya Jayaram

Proceedings Volume 11611, 116112D (2021) https://doi.org/10.1117/12.2588467

KEYWORDS: Metrology, Bridges, Manufacturing, Data modeling, Time metrology, Semiconducting wafers, Reticles, Internet, Design for manufacturability, Data integration

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Proceedings Article | 22 March 2018 Presentation + Paper

Context-based virtual metrology

Peter Ebersbach, Adam Urbanowicz, Dmitriy Likhachev, Carsten Hartig, Michael Shifrin

Proceedings Volume 10585, 1058514 (2018) https://doi.org/10.1117/12.2302498

KEYWORDS: Metrology, Semiconducting wafers, Data modeling, Machine learning, Data processing, Etching, Optics manufacturing, Wafer-level optics, Manufacturing, Process control

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Proceedings Article | 13 March 2018 Presentation + Paper

Matching between simulations and measurements as a key driver for reliable overlay target design

S. Lozenko, T. Shapoval, G. Ben-Dov, Z. Lindenfeld, B. Schulz , L. Fuerst, C. Hartig, R. Haupt, M. Ruhm, R. Wang

Proceedings Volume 10585, 105851E (2018) https://doi.org/10.1117/12.2297011

KEYWORDS: Scatterometry, Overlay metrology, Semiconducting wafers, Diffraction, Diffraction gratings, Computer simulations, Manufacturing, Data modeling, Critical dimension metrology

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Proceedings Article | 28 March 2017 Presentation + Paper

Combined process window monitoring for critical features

Carsten Hartig, Bernd Schulz, Robert Melzer, Matthias Ruhm, Daniel Fischer, Stefan Buhl, Boris Habets, Martin Rößiger, Manuela Gutsch

Proceedings Volume 10145, 101450U (2017) https://doi.org/10.1117/12.2259910

KEYWORDS: Electrical breakdown, Semiconducting wafers, Critical dimension metrology, Overlay metrology, Computer simulations, Lithography, Metals, Optical lithography, Feature extraction, Distance measurement

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Proceedings Article | 28 March 2017 Presentation + Paper

Advanced optical modeling of TiN metal hard mask for scatterometric critical dimension metrology

Peter Ebersbach, Adam Urbanowicz, Dmitriy Likhachev, Carsten Hartig

Proceedings Volume 10145, 101451G (2017) https://doi.org/10.1117/12.2258659

KEYWORDS: Tin, Metals, Optical properties, Data modeling, Dielectrics, Photomasks, Semiconducting wafers, Optics manufacturing, Etching, Diffractive optical elements

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Proceedings Article | 18 March 2016 Paper

Monitoring of ion implantation in microelectronics production environment using multi-channel reflectometry

Peter Ebersbach, Adam Urbanowicz, Dmitry Likhachev, Carsten Hartig

Proceedings Volume 9778, 977812 (2016) https://doi.org/10.1117/12.2220184

KEYWORDS: Interfaces, Silica, Reflectometry, Scatterometry, Optical properties, Silicon, Critical dimension metrology, Crystals, Ion implantation, Metrology, Semiconducting wafers, Data modeling, Ions, Annealing, Oxides, Diffractive optical elements, Magnesium

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Proceedings Article | 19 March 2015 Paper

Influence of the process-induced asymmetry on the accuracy of overlay measurements

Tetyana Shapoval, Bernd Schulz, Tal Itzkovich, Sean Durran, Ronny Haupt, Agostino Cangiano, Barak Bringoltz, Matthias Ruhm, Eric Cotte, Rolf Seltmann, Tino Hertzsch, Eitan Hajaj, Carsten Hartig, Boris Efraty, Daniel Fischer

Proceedings Volume 9424, 94240B (2015) https://doi.org/10.1117/12.2085788

KEYWORDS: Optical filters, Overlay metrology, Semiconducting wafers, Data modeling, Metrology, Optical properties, Optical simulations, Signal processing, Etching, Image segmentation

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Proceedings Article | 19 March 2015 Paper

Through pitch monitoring by optical scatterometry

R. Melzer, C. Hartig, Gunter Grasshof, B. Sass, F. Koch, Z. Xu, Z. Shen, J Engelmann

Proceedings Volume 9424, 942429 (2015) https://doi.org/10.1117/12.2076151

KEYWORDS: Single crystal X-ray diffraction, Etching, Critical dimension metrology, Semiconducting wafers, Optical proximity correction, Scatterometry, Transmission electron microscopy, Silicon, Modeling, Microelectronics

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Proceedings Article | 10 April 2013 Paper

Material contrast based inline metrology: process verification and control using back scattered electron imaging on CD-SEM

Carsten Hartig, Daniel Fischer, Bernd Schulz, Alok Vaid, Ofer Adan, Shimon Levi, Adam Ge, Jessica Zhou, Maayan Bar-Zvi, Ronny Enge, Uwe Groh

Proceedings Volume 8681, 868108 (2013) https://doi.org/10.1117/12.2012011

KEYWORDS: Metrology, Process control, Scanning electron microscopy, Semiconducting wafers, Etching, Copper, Overlay metrology, Signal detection, Image processing, Metals

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Proceedings Article | 10 April 2013 Paper

In-line E-beam wafer metrology and defect inspection: the end of an era for image-based critical dimensional metrology? New life for defect inspection

Eric Solecky, Oliver Patterson, Andrew Stamper, Erin McLellan, Ralf Buengener, Alok Vaid, Carsten Hartig, Benjamin Bunday, Abraham Arceo, Aron Cepler

Proceedings Volume 8681, 86810D (2013) https://doi.org/10.1117/12.2010007

KEYWORDS: Metrology, Defect inspection, Inspection, Ion beams, Semiconducting wafers, Scanning electron microscopy, Manufacturing, Dimensional metrology, 3D metrology, Critical dimension metrology

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Metrology measurement and defect inspection steps in routes are more pervasive than many people realize and the number continues to grow. Digging deeper, it turns out that E-beam metrology and defect inspection tools typically occupy the most overall steps and therefore are extremely critical tools for semiconductor development and manufacturing. The Critical Dimension Scanning Electron Microscope (CDSEM) is an E-beam tool responsible for image-based structural metrology measurements while the E-beam review (EBR) and E-beam inspection (EBI) tools are responsible for defect inspection. The CDSEM faces significant future challenges in a world where device architectures are changing (as with the FinFET device), increasing the need for more structural measurement parameters such as sidewall angle, height and undercut, than the CDSEM can deliver. These applications are now migrating to scattering-based tools, also referred to as model- or computational-based structural metrology techniques. We explore the history of the CDSEM, the key fundamental limits (primarily resolution) of the CDSEM preventing it from capturing these applications and assess if an image-based structural metrology tool is still needed given the niche that scattering tools are filling. The answer is yes. Next we discuss whether the CDSEM will eventually meet those needs or if other alternative solutions are needed. Lastly, we discuss an industry survey on which image-based technique holds the most promise to solve these challenges. Regarding defect inspection, resolution is also a concern for the applications that need to detect extremely small defects which current optical-based Brightfield tools cannot address. While resolution is a primary concern in structural metrology, current EBI and EBR tools possess the resolution needed for defect inspection and have extendibility through at least the next advanced technology node. We also explore the niche E-beam is filling in defect inspection, evaluate the idea that a better synergistic solution exists today between the CDSEM and the EBI tools and propose a future E-beam landscape where E-beam tool variety in future fabs is significantly reduced to enhance productivity.

Proceedings Article | 10 April 2013 Paper

Implementation of hybrid metrology at HVM fab for 20nm and beyond

Alok Vaid, Lokesh Subramany, Givantha Iddawela, Carl Ford, John Allgair, Gaurav Agrawal, John Taylor, Carsten Hartig, Byung Cheol (Charles) Kang, Cornel Bozdog, Matthew Sendelbach, Paul Isbester, Limor Issascharoff

Proceedings Volume 8681, 868103 (2013) https://doi.org/10.1117/12.2012339

KEYWORDS: Metrology, Semiconducting wafers, Critical dimension metrology, Transmission electron microscopy, Etching, Process control, Reactive ion etching, Data modeling, High volume manufacturing

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SPIE Journal Paper | 5 June 2012

Time-dependent electron-beam-induced photoresist shrinkage effects

Benjamin Bunday, Aaron Cordes, Carsten Hartig, John Allgair, Alok Vaid, Eric Solecky, Narender Rana

JM3, Vol. 11, Issue 02, 023007, (June 2012) https://doi.org/10.1117/12.10.1117/1.JMM.11.2.023007

KEYWORDS: Photoresist materials, Metrology, Critical dimension metrology, Time metrology, Semiconducting wafers, Scanning electron microscopy, Lithography, Etching, Diffractive optical elements, Optical proximity correction

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Proceedings Article | 4 April 2012 Paper

Hybrid metrology solution for 1X-node technology

Alok Vaid, Alexander Elia, Mark Kelling, John Allgair, Carsten Hartig, Peter Ebersbach, Erin McLellan, Matthew Sendelbach, Nedal Saleh, Narender Rana, Hiroki Kawada, Toru Ikegami, Masahiko Ikeno, Takahiro Kawasaki, Cornel Bozdog, Helen Kim, Elad Arnon, Roy Koret, Igor Turovets

Proceedings Volume 8324, 832404 (2012) https://doi.org/10.1117/12.916940

KEYWORDS: Line edge roughness, Scatterometry, Data modeling, Metrology, Critical dimension metrology, Metals, Semiconducting wafers, Extreme ultraviolet, Scatter measurement

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SPIE Journal Paper | 1 October 2011

Holistic metrology approach: hybrid metrology utilizing scatterometry, critical dimension-atomic force microscope and critical dimension-scanning electron microscope

Alok Vaid, Bin Bin Yan, Yun Tao Jiang, Mark Kelling, Carsten Hartig, John Allgair, Peter Ebersbach, Matthew Sendelbach, Narender Rana, Ahmad Katnani, Erin McLellan, Charles Archie, Cornel Bozdog, Helen Kim, Michael Sendler, Susan Ng, Boris Sherman, Boaz Brill, Igor Turovets, Ronen Urensky

JM3, Vol. 10, Issue 04, 043016, (October 2011) https://doi.org/10.1117/12.10.1117/1.3655726

KEYWORDS: Metrology, Scatterometry, Critical dimension metrology, Semiconducting wafers, Data modeling, Atomic force microscopy, Transmission electron microscopy, Inspection, 3D metrology

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Proceedings Article | 20 April 2011 Paper

Tool-to-tool matching issues due to photoresist shrinkage effects

Benjamin Bunday, Aaron Cordes, Carsten Hartig, John Allgair, Alok Vaid, Eric Solecky, Narender Rana

Proceedings Volume 7971, 79710B (2011) https://doi.org/10.1117/12.881400

KEYWORDS: Photoresist materials, Metrology, Semiconducting wafers, Lithography, Critical dimension metrology, Time metrology, Etching, Optical proximity correction, Manufacturing, Polymers

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Proceedings Article | 29 March 2011 Paper

A holistic metrology approach: hybrid metrology utilizing scatterometry, CD-AFM, and CD-SEM

Alok Vaid, Bin Bin Yan, Yun Tao Jiang, Mark Kelling, Carsten Hartig, John Allgair, Peter Ebersbach, Matthew Sendelbach, Narender Rana, Ahmad Katnani, Erin Mclellan, Chas Archie, Cornel Bozdog, Helen Kim, Michael Sendler, Susan Ng, Boris Sherman, Boaz Brill, Igor Turovets, Ronen Urensky

Proceedings Volume 7971, 797103 (2011) https://doi.org/10.1117/12.881632

KEYWORDS: Metrology, Critical dimension metrology, Scatterometry, Semiconducting wafers, Metals, Transmission electron microscopy, Data modeling, Atomic force microscopy, Inspection

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Proceedings Article | 24 March 2009 Paper

Monitoring measurement tools: new methods for driving continuous improvements in fleet measurement uncertainty

Eric Solecky, Chas Archie, Matthew Sendelbach, Ron Fiege, Mary Zaitz, Dmitriy Shneyder, Carlos Strocchia-rivera, Andres Munoz, Srinivasan Rangarajan, William Muth, Andrew Brendler, Bill Banke, Bernd Schulz, Carsten Hartig, Jon-Tobias Hoeft, Alok Vaid, Mark Kelling, Benjamin Bunday, John Allgair

Proceedings Volume 7272, 72721H (2009) https://doi.org/10.1117/12.814089

KEYWORDS: Semiconducting wafers, Metrology, Scatterometry, Process control, Calibration, Manufacturing, Overlay metrology, Time metrology, Atomic force microscopy

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Ever shrinking measurement uncertainty requirements are difficult to achieve for a typical metrology toolset, especially over the entire expected life of the fleet. Many times, acceptable performance can be demonstrated during brief evaluation periods on a tool or two in the fleet. Over time and across the rest of the fleet, the most demanding processes often have measurement uncertainty concerns that prevent optimal process control, thereby limiting premium part yield, especially on the most aggressive technology nodes. Current metrology statistical process control (SPC) monitoring techniques focus on maintaining the performance of the fleet where toolset control chart limits are derived from a stable time period. These tools are prevented from measuring product when a statistical deviation is detected. Lastly, these charts are primarily concerned with daily fluctuations and do not consider the overall measurement uncertainty. It is possible that the control charts implemented for a given toolset suggest a healthy fleet while many of these demanding processes continue to suffer measurement uncertainty issues. This is especially true when extendibility is expected in a given generation of toolset. With this said, there is a need to continually improve the measurement uncertainty of the fleet until it can no longer meet the needed requirements at which point new technology needs to be entertained. This paper explores new methods in analyzing existing SPC monitor data to assess the measurement performance of the fleet and look for opportunities to drive improvements. Long term monitor data from a fleet of overlay and scatterometry tools will be analyzed. The paper also discusses using other methods besides SPC monitors to ensure the fleet stays matched; a set of SPC monitors provides a good baseline of fleet stability but it cannot represent all measurement scenarios happening in product recipes. The analyses presented deal with measurement uncertainty on non-measurement altering metrology toolsets such as scatterometry, overlay, atomic force microscopy (AFM) or thin film tools. The challenges associated with monitoring toolsets that damage the sample such as the CD-SEMs will also be discussed. This paper also explores improving the monitoring strategy through better sampling and monitor selection. The industry also needs to converge regarding the metrics used to describe the matching component of measurement uncertainty so that a unified approach is reached regarding how to best drive the much needed improvements. In conclusion, there will be a discussion on automating these new methods3,4 so they can complement the existing methods to provide a better method and system for controlling and driving matching improvements in the fleet.

Proceedings Article | 23 March 2009 Paper

Product-driven material characterization for improved scatterometry time-to-solution

Alok Vaid, Carsten Hartig, Matthew Sendelbach, Cornel Bozdog, Hyang Kyun Kim, Michael Sendler, Yoel Cohen, Victor Kucherov, Boaz Brill, Stanislav Stepanov

Proceedings Volume 7272, 72720V (2009) https://doi.org/10.1117/12.814380

KEYWORDS: Scatterometry, Material characterization, Optical properties, Semiconducting wafers, Metals, Critical dimension metrology, Etching, Silicon, Metrology, Wafer-level optics

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Proceedings Article | 22 March 2008 Paper

Scatterometry as technology enabler for embedded SiGe process

Alok Vaid, Rohit Pal, Matthew Sendelbach, Shahin Zangooie, Kevin Lensing, Carsten Hartig

Proceedings Volume 6922, 69220U (2008) https://doi.org/10.1117/12.774564

KEYWORDS: Scatterometry, Metrology, Semiconducting wafers, Transmission electron microscopy, Scatter measurement, Etching, Diffractive optical elements, Silicon, Process control, Germanium

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