Dr. Charles M. Settens Profile

Dr. Charles M. Settens

Graduate Research Assistant at Massachusetts Institute of Technology

SPIE Involvement:

Author

Area of Expertise:

X-ray Metrology , SAXS , XRD , Small angle X-ray Scattering , XRR , FinFET

Profile Summary

My PhD research centers on metrology of nanostructures from various semiconductor materials with X-ray probes, particularly small angle X-ray scattering (SAXS), high resolution X-ray diffractometry (HRXRD) and reflectometry (XRR), as well as supplemental characterization techniques such as, atomic force microscopy (AFM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM).

Publications (4)

SPIE Journal Paper | 4 November 2014

Assessment of critical dimension small-angle x-ray scattering measurement approaches for FinFET fabrication process monitoring

Charles Settens, Aaron Cordes, Benjamin Bunday, Abner Bello, Vimal Kamineni, Abhijeet Paul, Jody Fronheiser, Richard Matyi

JM3, Vol. 13, Issue 04, 041408, (November 2014) https://doi.org/10.1117/12.10.1117/1.JMM.13.4.041408

KEYWORDS: Silicon, Scattering, X-rays, Hydrogen, Critical dimension metrology, Annealing, Metrology, Scatter measurement, Double patterning technology

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Proceedings Article | 10 April 2013 Paper

Critical dimension small angle X-ray scattering measurements of FinFET and 3D memory structures

Charles Settens, Benjamin Bunday, R. Joseph Kline, Daniel Sunday, Chengqing Wang, Wen-li Wu, Richard Matyi, Brad Thiel

Proceedings Volume 8681, 86810L (2013) https://doi.org/10.1117/12.2012019

KEYWORDS: Scattering, 3D metrology, Critical dimension metrology, X-rays, Etching, Silicon, Metrology, Oxides, Scatter measurement

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Proceedings Article | 10 April 2013 Paper

Gaps analysis for CD metrology beyond the 22nm node

Thomas Germer, Victor Vartanian, Aaron Cordes, Aron Cepler, Charles Settens, Benjamin Bunday

Proceedings Volume 8681, 86813B (2013) https://doi.org/10.1117/12.2012472

KEYWORDS: Critical dimension metrology, Metrology, Scanning helium ion microscopy, 3D metrology, Silicon, Image resolution, Etching, Scanning electron microscopy, Oxides

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Proceedings Article | 16 April 2011 Paper

Coefficient of thermal expansion (CTE) in EUV lithography: LER and adhesion improvement

Robert Brainard, Karen Petrillo, Richard Matyi, Charles Settens, Robert Auger, Patricia Wolfe, Craig Higgins

Proceedings Volume 7972, 797211 (2011) https://doi.org/10.1117/12.879509

KEYWORDS: Line edge roughness, Silicon, Polymers, Lithography, Extreme ultraviolet, Head-mounted displays, Silicon films, Thin films, Extreme ultraviolet lithography, Interfaces

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