Mr. Chawon Koh Profile

Chawon Koh

Project Manager at 601-97-55026

SPIE Involvement:

Conference Program Committee | Author

Publications (26)

Proceedings Article | 1 May 2023 Presentation + Paper

Fluoroalkylated tin-oxo nano clusters as resist candidates for extreme UV lithography

Jin-Kyun Lee, Yejin Ku, Hyungju Ahn, Jiho Kim, Byeong-Gyu Park, Sangsul Lee, Yu Ha Jang, Byung Jun Jung, Chawon Koh, Tsunehiro Nishi, Hyun-Woo Kim

Proceedings Volume 12498, 1249816 (2023) https://doi.org/10.1117/12.2658210

KEYWORDS: Photoresist materials, Extreme ultraviolet lithography, Polymers, Extreme ultraviolet, Thin films, Lithography, Tin

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Proceedings Article | 1 December 2022 Presentation + Paper

The trade-off between local critical dimension uniformity and sensitivity for contact hole high-NA printing in chemically amplified resists

Chawon Koh, Jinkyu Han, Tsunehiro Nishi, Chris Anderson, Jinmo Kim, Cheolhong Park, Eunju Kim, Patrick Naulleau

Proceedings Volume 12292, 1229203 (2022) https://doi.org/10.1117/12.2641648

KEYWORDS: Scanning electron microscopy, Nanoimprint lithography, Photomasks, Optical lithography, Printing, Extreme ultraviolet, Chemically amplified resists, Stochastic processes, Extreme ultraviolet lithography, Diffusion

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Proceedings Article | 25 May 2022 Presentation + Paper

Perfluoroalkylated metallophthalocyanines as EUV resist candidates

Yejin Ku, Jun-il Kim, Hyun-Taek Oh, Minkyu Choi, Jin-Kyun Lee, Kang-Hyun Kim, Byeong-Gyu Park, Sangsul Lee, Chawon Koh, Tsunehiro Nishi, Hyun-Woo Kim, Youngtae Kim

Proceedings Volume 12055, 120550D (2022) https://doi.org/10.1117/12.2612313

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Electron beam lithography, Zinc, Lithography, Thin films, Metals

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Proceedings Article | 20 March 2012 Paper

Limitation of blend type of resist platform on EUV lithography

Hai Sub Na, Hyun Woo Kim, Chawon Koh, Taku Hirayama, Su Min Kim

Proceedings Volume 8325, 83251D (2012) https://doi.org/10.1117/12.912728

KEYWORDS: Polymers, Extreme ultraviolet lithography, Diffusion, Line width roughness, Lithography, Extreme ultraviolet, Thin films, Semiconducting wafers, Polymer thin films, Photoresist processing

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Proceedings Article | 8 April 2011 Paper

Availability of underlayer application to EUV process

Hitoshi Kosugi, Cha-Won Koh, Hai-Sub Na, Hiroshi Marumoto, Chang-Min Park, Kyoungyong Cho, Carlos Fonseca, Cheol-Hong Park, Fumiko Iwao, Hyun-Woo Kim, Hanku Cho

Proceedings Volume 7969, 79692E (2011) https://doi.org/10.1117/12.878730

KEYWORDS: Coating, Semiconducting wafers, Contamination, Extreme ultraviolet, Data modeling, Calibration, Extreme ultraviolet lithography, Scanning electron microscopy, Etching, Thin films

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Proceedings Article | 7 April 2011 Paper

LWR improvement in EUV resist process

Chang-Min Park, Cheolhong Park, Chawon Koh, Sumin Kim, Hyun-Woo Kim, Hai-Sub Na, Kyoung-Yong Cho

Proceedings Volume 7969, 796918 (2011) https://doi.org/10.1117/12.879334

KEYWORDS: Line width roughness, Extreme ultraviolet, Extreme ultraviolet lithography, Photoresist processing, Critical dimension metrology, Etching, Inspection, Electronics, Optical lithography, Semiconductors

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Extreme ultraviolet lithography (EUVL) is the most effective way to print sub-30 nm features. The roughness of both the resist sidewall (line width roughness [LWR]) and resist top must be overcome soon for EUVL to be implemented. Currently, LWR can vary by about 1 nm according to the recipe used. We have characterized two promising techniques to improve LWR, an EUV rinse/TBAH process and an implant process, and demonstrated their efficacy. After cleaning inspection (ACI), LWR was improved with both the rinse and implant processes. After development inspection (ADI), LWR improved (0.12 nm, 2.4%) and ACI LWR improved (0.1 nm, 2.0% improvement) after using the EUV rinse process. ADI and ACI LWR improvement (0.45 nm, 9.1%, and 0.3 nm, 6.9%, respectively) was demonstrated with the EUV rinse/TBAH process. ADI LWR improvement (0.5 nm, 8.1%) and ACI LWR improvement (-0.5 nm, -16.9%) were characterized with the implant process. Critical dimension (CD) showed similar changes through pitch after the EUV rinse or TBAH process, but the degree of change depended on the initial pattern size giving CD difference of 2 nm between 30 nm HP and 50 nm HP after the implant process. For this technique, the dependence of CD change on pattern size must be minimized. Further extensive studies with rinse or implant are strongly encouraged for continued LWR improvement and real process implementation in EUVL. Demonstrating <2.2 nm LWR after pattern transfer is important in EUVL and needs to be pursued using various technical approaches. Initial resist LWR is important in assessing LWR improvements with additional process techniques. An initial EUV LWR < ~5.0 nm is required to properly assess the validity of the technique. Further study is required to improve ADI LWR and maintain better LWR after etch with advanced EUV rinse materials. Defects also need to be confirmed following the EUV rinse and TBAH developer. Further developing the implant process should focus on LWR improvement at low frequencies and optimization of process conditions to maintain the EUV resist profile and resist height. The dependence of CD change on pattern size likewise needs to be minimized.

Proceedings Article | 7 April 2011 Paper

CD uniformity improvement for EUV resists process: EUV resolution enhancement layer

Sumin Kim, Han-Ku Cho, Chawon Koh, Hyun-Woo Kim, Hai-Sub Na, In-Sung Kim, Cheolhong Park, Chang-Min Park

Proceedings Volume 7969, 796916 (2011) https://doi.org/10.1117/12.879791

KEYWORDS: Extreme ultraviolet, Critical dimension metrology, Deep ultraviolet, Reflectivity, Extreme ultraviolet lithography, Line width roughness, Photoresist processing, Resolution enhancement technologies, Photomasks, Plasma

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Proceedings Article | 23 March 2010 Paper

The SEMATECH Berkeley MET pushing EUV development beyond 22nm half pitch

Brittany McClinton, Bruno La Fontaine, Seno Rekawa, Patrick Naulleau, Simi George, Kenneth Goldberg, Tom Wallow, Ryan Miyakawa, Paul Denham, David Chan, Brian Hoef, Christopher Anderson, Gideon Jones, Warren Montgomery, Chawon Koh, Lorie-Mae Baclea-an

Proceedings Volume 7636, 76361J (2010) https://doi.org/10.1117/12.848438

KEYWORDS: Line edge roughness, Photomasks, Extreme ultraviolet, Printing, Phase shifts, Lithographic illumination, Extreme ultraviolet lithography, Image resolution, Mask cleaning, Resolution enhancement technologies

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Proceedings Article | 20 March 2010 Paper

Printability and inspectability of programmed pit defects on the masks in EUV lithography

Byung-Sup Ahn, Kenneth Goldberg, Iacopo Mochi, Dong-Gun Lee, Hwan-Seok Seo, Brian Cha, Dongwan Kim, Han-Ku Cho, In-Yong Kang, Seoung-Sue Kim, Cha-Won Koh, Sungmin Huh

Proceedings Volume 7636, 76361B (2010) https://doi.org/10.1117/12.847956

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet lithography, Defect inspection, Extreme ultraviolet, Critical dimension metrology, Visibility, Ion beams, Atomic force microscopy, Semiconducting wafers

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Proceedings Article | 20 March 2010 Paper

Absorber stack optimization in EUVL masks: lithographic performances in alpha demo tool and other issues

In-Yong Kang, Dongwan Kim, Byung-Sup Ahn, Hwan-Seok Seo, Cha-Won Koh, Tae Geun Kim, Seong-Sue Kim, Han-Ku Cho, Hoon Kim, Dong-Gun Lee

Proceedings Volume 7636, 76360X (2010) https://doi.org/10.1117/12.847955

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Semiconducting wafers, Extreme ultraviolet, Lithography, Inspection, Line width roughness, Scanners, Critical dimension metrology, Electroluminescence

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Proceedings Article | 18 March 2010 Paper

Characterization of promising resist platforms for sub-30-nm HP manufacturability and EUV CAR extendibility study

Stefan Wurm, Joo-on Park, Jacque Georger, Frank Goodwin, Chawon Koh, George Huang, Patrick Naulleau, Liping Ren, Warren Montgomery, Bill Pierson, Dominic Ashworth

Proceedings Volume 7636, 763604 (2010) https://doi.org/10.1117/12.846629

KEYWORDS: Optical lithography, Extreme ultraviolet, Manufacturing, Line width roughness, Polymers, Etching, Extreme ultraviolet lithography, Resistance, Glasses, Photoresist processing

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Extreme ultraviolet lithography (EUVL) is the most effective way to print sub-30 nm features. We characterized EUVL readiness of the three major resist platforms for sub-30 nm half-pitch (HP) manufacturability using a full-field ASML alpha demo tool (ADT) scanner and studied the extendibility of EUV chemically amplified resist (CAR). Based on an "M-factor" analysis, which shows the maturity of EUV resist for 28 nm HP manufacturability, a polymer-bound photoacid generator (PAG) resist was 78% ready, a PHS hybrid resist was 81%, and a molecular glass EUV resist was 58%. The polymer-bound resist showed good resolution for 25 nm HP using the ASML ADT. It also demonstrated fair linewidth roughness (LWR) and a good lithographic process margin of 18% exposure latitude (EL) and 160 nm depth of field (DOF) for 28 nm HP patterning compared with the other resist platforms, but its resist collapse and etch resistance need to be improved for manufacturability. PHS hybrid resist showed a fair etch resistance and resist collapse performance compared to the other resist platforms, but LWR needs to be improved. The molecular resist needs to mature further, especially in resist collapse and iso-dense (ID) bias. When considering its many strong points and control of lower acid diffusion, the polymer-bound PAG resist appears to be the most suitable platform for manufacturability and EUV CAR extension. We therefore would like to encourage the development of next generation polymer-bound PAG resist with a higher etch resistance. A process window of 80 nm DOF was demonstrated for 26 nm HP patterning and a measurable DOF for 25 nm HP was achieved with the polymer-bound PAG resist. Resist collapse and LWR are major issues for 22 nm HP patterning in manufacturing. LWR improvements were achieved with various techniques, and resist collapse was greatly improved with a novel approach that uses a residual resist layer. 16 nm HP line/space (L/S) image modulation and 18 nm HP resolution were demonstrated with an EUV CAR, indicating that EUV CAR could be extended to sub-20 nm HP patterning.

Proceedings Article | 18 March 2009 Paper

The SEMATECH Berkeley microfield exposure tool: learning at the 22-nm node and beyond

Russ Hudyma, Lorie-Mae Baclea-an, Kenneth Goldberg, Stefan Wurm, Chawon Koh, Christopher Anderson, Ryan Miyakawa, Gideon Jones, Paul Denham, Thomas Wallow, Michael Goldstein, Patrick Naulleau, Warren Montgomery, Brian Hoef, John Roller, Simi George, Brittany McClinton, Bruno La Fontaine

Proceedings Volume 7271, 72710W (2009) https://doi.org/10.1117/12.814232

KEYWORDS: Line edge roughness, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, Printing, Lithography, Computer aided design, Synchrotrons, Surface roughness

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Proceedings Article | 18 March 2009 Paper

Assessment of EUV resist readiness for 32-nm hp manufacturing and extendibility study of EUV ADT using state-of-the-art resist

Liping Ren, Chawon Koh, Patrick Naulleau, Frank Goodwin, Joo-On Park, Stefan Wurm, Todd Younkin, Bill Pierson, Tom Wallow, Jacque Georger

Proceedings Volume 7271, 727124 (2009) https://doi.org/10.1117/12.814314

KEYWORDS: Semiconducting wafers, Manufacturing, Extreme ultraviolet lithography, Extreme ultraviolet, Line width roughness, Photoresist processing, Optical lithography, Photomasks, Electroluminescence, Critical dimension metrology

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Proceedings Article | 18 March 2009 Paper

The application of EUV lithography for 40nm node DRAM device and beyond

Doohoon Goo, Jeonghoon Lee, Chawon Koh, Joo-on Park, JeongHo Yeo, Seong-Woon Choi, Chan-hoon Park, JinHong Park, InSung Kim, Changmin Park

Proceedings Volume 7271, 727114 (2009) https://doi.org/10.1117/12.814001

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Lithography, Etching, Photomasks, Semiconducting wafers, Scanners, Optical proximity correction, Light sources, Resistance

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Proceedings Article | 26 June 2003 Paper

Characterization and improvement of field CD uniformity for implementation of 0.15-μm technology device using KrF stepper

Yoon-Suk Hyun, Cha-Won Koh, Dong-Joo Kim, Won-Taik Kwon, Sung-Nam Park

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485400

KEYWORDS: Reticles, Forward error correction, Semiconducting wafers, Photomasks, Scanners, Semiconductors, Optical filters, Inspection, Optical lithography, Scanning electron microscopy

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Proceedings Article | 12 June 2003 Paper

Characterization of resist flow process for the improvement of contact hole CD uniformity

Dong-Ho Lee, Sung-Nam Park, Won-Taik Kwon, Cha-Won Koh, Myoung-Soo Kim

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485110

KEYWORDS: Semiconducting wafers, Photoresist processing, Resistance, Critical dimension metrology, Lithography, Temperature metrology, Silicon, Optical resolution, Optical lithography, Chemically amplified resists

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Proceedings Article | 30 July 2002 Paper

Limitation of optical lithography for various resolution enhancement technologies

Tae-Seung Eom, Dong-Heok Park, Cheol-Kyu Bok, Cha-Won Koh, Chang-Nam Ahn

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474545

KEYWORDS: Lithographic illumination, Optical lithography, Diffusion, Lithography, Photomasks, Resolution enhancement technologies, Electroluminescence, Optical proximity correction, Critical dimension metrology, Image processing

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Proceedings Article | 24 July 2002 Paper

Contact hole resolution enhancement by post exposure amine treatment (CONPEAT) process

Cheol-Kyu Bok, Ki-Soo Shin, Cha-Won Koh, Jin-Soo Kim, Chang-Il choi, Tae-Seung Eom, Jae Chang Jung, Won-Taik Kwon

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474280

KEYWORDS: Photoresist processing, Critical dimension metrology, Semiconducting wafers, Chemically amplified resists, Resolution enhancement technologies, Optical lithography, Lithography, Image processing, Photomasks, Inspection

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Proceedings Article | 24 August 2001 Paper

Improved lithographic performance of 193-nm photoresists based on cycloolefin/maleic anhydride copolymer by employing mixed PAGs

Jae-Hyun Kim, Yang-Sook Kim, Ki-Ho Baik, Cha-Won Koh, Geunsu Lee, Yong-Jun Choi, Jae Chang Jung, Se-Jin Choi, Deog-Bae Kim, Sang-Don Kim

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436828

KEYWORDS: Line edge roughness, Lithography, Chromophores, Monochromatic aberrations, Transmittance, Polymers, Photoresist materials, Diffusion, Photomasks, Chlorine

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Proceedings Article | 24 August 2001 Paper

Novel high-performance ArF resist for sub-100-nm lithography

Yang-Sook Kim, Jin-Soo Kim, Cha-Won Koh, Jae Chang Jung, Keun-Kyu Kong, Min-Ho Jung, Geunsu Lee, Deog-Bae Kim, Yong-Jun Choi, Se-Jin Choi, Ki-Soo Shin

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436843

KEYWORDS: Lithography, Line edge roughness, Photomasks, Etching, Polymers, Silicon, Monochromatic aberrations, Oxides, Scanning electron microscopy, Optical lithography

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Proceedings Article | 24 August 2001 Paper

Novel routes toward sub-70-nm contact windows by using new KrF photoresist

Cha-Won Koh, Ki-Soo Shin, Jae Chang Jung, Jin-Soo Kim, Geunsu Lee

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436852

KEYWORDS: Photoresist processing, Critical dimension metrology, Lithography, Photoresist materials, Terbium, Semiconducting wafers, Etching, Scanning electron microscopy, Inspection, Gases

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Proceedings Article | 24 August 2001 Paper

Novel chemically amplified positive resist containing acetal-type crosslinker of poly(3,3'-dimethoxypropene) for 193-nm top surface imaging process

Ki-Soo Shin, Min-Ho Jung, Myoung-Soo Kim, Geunsu Lee, Jin-Soo Kim, Cha-Won Koh, Keun-Kyu Kong, Jae Chang Jung

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436911

KEYWORDS: Lithography, Photoresist processing, Image processing, 193nm lithography, Etching, Photoresist materials, Photoresist developing, Line edge roughness, Resistance, Electron beam lithography

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Proceedings Article | 23 June 2000 Paper

Acidity control for compatibility of novel organic bottom antireflective coating materials with various KrF and ArF photoresists

Jin-Soo Kim, Sung-Eun Hong, Geunsu Lee, Jae Chang Jung, Ki-Ho Baik, Cha-Won Koh, Min-Ho Jung

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388259

KEYWORDS: Annealing, Lithography, Bottom antireflective coatings, Photoresist materials, Electronics, Reflectivity, Etching, Interfaces, Natural surfaces, Polymers

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Proceedings Article | 23 June 2000 Paper

ArF photoresist containing novel acid labile cross-linker for high contrast and PED stability

Ki-Ho Baik, Cha-Won Koh, Min-Ho Jung, Geunsu Lee, Sung-Eun Hong, Hyeong-Soo Kim, Jae Chang Jung

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388303

KEYWORDS: Etching, Photoresist materials, Lithography, Polymers, Resistance, Critical dimension metrology, Photoresist processing, Scanning electron microscopy, Photoresist developing, Yield improvement

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Proceedings Article | 11 June 1999 Paper

Novel 193-nm single-layer resist containing a multifunctional monomer

Min-Ho Jung, Il-Hyun Choi, Cha-Won Koh, Geunsu Lee, Jae Chang Jung, Hyeong-Soo Kim, Ki-Ho Baik

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350206

KEYWORDS: Etching, Resistance, Lithography, Photoresist materials, Polymers, Silicon, Scanning electron microscopy, Yield improvement, Photoresist processing, Polymerization

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Proceedings Article | 7 July 1997 Paper

Environmentally stable chemically amplified positive resist containing vinyllactam terpolymers

Min-Ho Jung, Cheol-Kyu Bok, Ki-Ho Baik, Jin-Baek Kim, Cha-Won Koh, Jong-Ho Cheong

Proceedings Volume 3049, (1997) https://doi.org/10.1117/12.275852

KEYWORDS: Lithography, Polymers, Contamination, Deep ultraviolet, Semiconducting wafers, Chemically amplified resists, Excimers, Diffusion, Photoresist materials, Polymerization

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Showing 5 of 26 publications

Conference Committee Involvement (3)

International Conference on Extreme Ultraviolet Lithography 2024

29 September 2024 | Monterey, California, United States

International Conference on Extreme Ultraviolet Lithography 2023

2 October 2023 | Monterey, California, United States

International Conference on Extreme Ultraviolet Lithography 2022

26 September 2022 | Monterey, California, United States

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