Dr. Chi-Chun Liu Profile

Dr. Chi-Chun Liu

Research Staff Member at IBM Research

SPIE Involvement:

Conference Program Committee | Author

Publications (36)

Proceedings Article | 4 May 2020 Presentation + Paper

Presentation + Paper

Measuring local CD uniformity in EUV vias with scatterometry and machine learning

Dexin Kong, Daniel Schmidt, Jennifer Church, Chi-Chun Liu, Mary Breton, Cody Murray, Eric Miller, Luciana Meli, John Sporre, Nelson Felix, Ishtiaq Ahsan, Aron Cepler, Marjorie Cheng, Roy Koret, Igor Turovets

Proceedings Volume 11325, 113251I (2020) https://doi.org/10.1117/12.2551498

KEYWORDS: Scatterometry, Machine learning, Semiconducting wafers, Critical dimension metrology, Etching, Photoresist materials, Lithography, Metrology, Scatter measurement, Data modeling

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Proceedings Article | 6 April 2020 Presentation + Paper

Presentation + Paper

Strategies for aggressive scaling of EUV multi-patterning to sub-20 nm features

Ashim Dutta, Jennifer Church, Joe Lee, Brendan O’Brien, Luciana Meli, Chi Chun Liu, Saumya Sharma, Karen Petrillo, Cody Murray, Eric Liu, Katie Lutker-Lee, Qiaowei Lou, Chris Cole, Angélique Raley, Akiteru Ko, Subhadeep Kal, Jake Kaminsky, Aelan Mosden, Henan Zhang, Shan Hu, Lior Huli, Naoki Shibata, Dave Hetzer, Chia-Yun (Sharon) Hsieh

Proceedings Volume 11323, 113230V (2020) https://doi.org/10.1117/12.2551727

KEYWORDS: Line edge roughness, Lithography, Etching, Amorphous silicon, Extreme ultraviolet, Oxidation, Extreme ultraviolet lithography, Optical lithography, Scanning electron microscopy, Critical dimension metrology

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Proceedings Article | 24 March 2020 Presentation

Presentation

Exploration of pillar local CDU improvement options for AI applications (Conference Presentation)

Chi-Chun Liu, Hao Tang, Yann Mignot, Ashim Dutta, Jennifer Church, Saumya Sharma, Dominik Metzler, Karen Petrillo, Michael Rizzolo, Luciana Meli, John Arnold, Nelson Felix

Proceedings Volume 11326, 113260W (2020) https://doi.org/10.1117/12.2552112

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Proceedings Article | 26 March 2019 Presentation + Paper

Presentation + Paper

LCDU improvement of EUV-patterned vias with DSA

Jing Guo, Dustin Janes, Yann Mignot, Richard Johnson, Cheng Chi, Chi-Chun Liu, Luciana Meli, Takuya Kuroda, Domenico DiPaola, Yuji Tanaka, Harumoto Masahiko, Nelson Felix, Daniel Corliss

Proceedings Volume 10958, 109580N (2019) https://doi.org/10.1117/12.2515153

KEYWORDS: Polymethylmethacrylate, Optical lithography, Extreme ultraviolet lithography, Critical dimension metrology, Etching, Chemistry, Ultraviolet radiation, Defect inspection, Extreme ultraviolet, Polymers

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Lithographic and pitch-multiplying spacer technologies are widely used to shrink interconnect periodicity within critical layers. This places significant burden on overlay and CD uniformity of the subsequently patterned vias to physically contact and electrically connect critical layers to the rest of the integrated circuit in a nearly defect-free and perfectly-consistent manner. We are evaluating the combination of EUV and DSA patterning technologies to meet this challenge and enable future technology nodes. The contact hole guide pattern is fabricated atop bilayer hardmask material by single-exposure EUV, surface-modified with telechelic polymer brush materials, and finally shrunk/rectified using self-assembled, lamella-forming polystyrene-block-polymethylmethacrylate (PS-b-PMMA). The nascent via pattern is then blanket exposed by DUV light and the photolyzed PMMA is selectively rinsed away. Here we study the process performance of DSA pattern wet etch chemistry and subsequent dry etch pattern transfer into bilayer hardmask material using both metrology and electrical yield measurements as evaluation criteria. In particular, the choice of wet etch solvation strength selective towards PMMA was varied from moderate (isopropanol, IPA) to good (acetic acid, AAc). Due to the ability of AAC to solubilize all covalently-untethered PMMA, regardless of molecular weight, the resulting average CD is wider and its local distribution is more uniform. In contrast, IPA is only capable of rinsing away the smallest PMMA fragments, resulting in relatively tighter bounds about the preferable blanket UV dose, and a smaller average CD and less-uniform local CD distribution. These morphological differences are confirmed by cross-sectional transmission electron micrographs. Brightfield inspection and inline electrical testing are used to compare relative defectivity and yield, respectively, to assess the potential impact on device performance for processes utilizing either solvent.

Proceedings Article | 26 March 2019 Presentation + Paper

Presentation + Paper

Electrical validation of the integration of 193i and DSA for sub-20nm metal cut patterning

Chi-Chun Liu, Richard Farrell, Kafai Lai, Yann Mignot, Eric Liu, Jing Guo, Yasuyuki Ido, Makoto Muramatsu, Nelson Felix, David Hetzer, Akiteru Ko, John Arnold, Daniel Corliss

Proceedings Volume 10958, 109580L (2019) https://doi.org/10.1117/12.2515862

KEYWORDS: Metals, Critical dimension metrology, Etching, Directed self assembly, Optical lithography, Back end of line, Lithography, Overlay metrology

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Proceedings Article | 6 September 2018 Paper

Paper

Computational enablement for designs with sub-20nm metal tip to tip using cut shapes from grapho-epitaxy directed self-assembly

Balint Meliorisz, Kafai Lai, Ulrich Welling, Hans-Jürgen Stock, Sajan Marokkey, Thomas Muelders, Jing Sha, Chi-chun Liu, Cheng Chi, Jing Guo, Clifford Osborn, Jaime Morillo, Wolfgang Demmerle, Derren Dunn

Proceedings Volume 10586, 105860R (2018) https://doi.org/10.1117/12.2297344

KEYWORDS: Metals, Directed self assembly, Critical dimension metrology, Calibration, Error analysis, Etching, Computer simulations, Process modeling, Optical lithography, Extreme ultraviolet lithography

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Proceedings Article | 5 September 2018 Presentation + Paper

Presentation + Paper

In-line characterization of non-selective SiGe nodule defects with scatterometry enabled by machine learning

Dexin Kong, Robin Chao, Mary Breton, Chi-chun Liu, Gangadhara Raja Muthinti, Soon-cheon Seo, Nicolas Loubet, Pietro Montanini, John Gaudiello, Veeraraghavan Basker, Aron Cepler, Susan Ng-Emans, Matthew Sendelbach, Itzik Kaplan, Gilad Barak, Daniel Schmidt, Julien Frougier

Proceedings Volume 10585, 1058510 (2018) https://doi.org/10.1117/12.2297377

KEYWORDS: Scatterometry, Semiconducting wafers, Scanning electron microscopy, Machine learning, Metrology, Data modeling, Scatter measurement, Mathematical modeling, Transmission electron microscopy, Field effect transistors

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As device scaling continues, controlling defect densities on the wafer becomes essential for high volume manufacturing (HVM). One type of defect, the non-selective SiGe nodule, becomes more difficult to control during SiGe epitaxy (EPI) growth for p-type field effect transistor (pFET) source and drain. The process window for SiGe EPI growth with low nodule density becomes extremely tight due to the shrinking of contact poly pitch (CPP). Any tiny process shift or incoming structure shift could introduce a high density of nodules, which could affect device performance and yield. The current defect inspection method has a low throughput, so a fast and quantitative characterization technique is preferred for measuring and monitoring this type of defect. Scatterometry is a fast and non-destructive in-line metrology technique. In this work, novel methods were developed to accurately and comprehensively measure the SiGe nodules with scatterometry information. Top-down critical dimension scanning electron microscopy (CD-SEM) images were collected and analyzed on the same location as scatterometry measurement for calibration. Machine learning (ML) algorithms are used to analyze the correlation between the raw spectra and defect density and area fraction. The analysis showed that the defect density and area fractions can be measured separately by correlating intensity variations. In addition to the defect density and area fraction, we also investigate a novel method – model-based scatterometry hybridized with machine learning capabilities – to quantify the average height of the defects along the sidewall of the gate. Hybridizing the machine learning method with the model-based one could also eliminate the possibility of misinterpreting the defect as some structural parameters. Furthermore, cross-sectional TEM and SEM measurement are used to calibrate the model-based scatterometry results. In this work, the correlation between the SiGe nodule defects and the structural parameters of the device is also studied. The preliminary result shows that there is strong correlation between the defect density and spacer thickness. Correlations between the defect density and the structural parameters provides useful information for process engineers to optimize the EPI growth process. With the advances in the scatterometry-based defect measurement metrology, we demonstrate such fast, quantitative, and comprehensive measurement of SiGe nodule defects can be used to improve the throughput and yield.

Proceedings Article | 28 March 2018 Paper

Paper

The integration of 193i and DSA for BEOL metal cuts/blocks targeting sub-20nm tip-to-tip CD

Chi-Chun Liu, Yann Mignot, Cheng Chi, Richard Farrell, Kafai Lai, Jing Guo, Jing Sha, Martin Glodde, Makoto Muramatsu, Yasuyuki Ido, Nelson Felix, David Hetzer, Andrew Metz, Daniel Corliss

Proceedings Volume 10584, 105840L (2018) https://doi.org/10.1117/12.2297365

KEYWORDS: Etching, Critical dimension metrology, Metals, Directed self assembly, Oxides, Back end of line, Dielectrics, Scanning electron microscopy, Tin, Lithography

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SPIE Journal Paper | 28 August 2017

Ultrathin extreme ultraviolet patterning stack using polymer brush as an adhesion promotion layer

Indira Seshadri, Anuja De Silva, Luciana Meli, Chi-Chun Charlie Liu, Cheng Chi, Jing Guo, Hoa Truong, Kristin Schmidt, John Arnold, Nelson Felix, Lovejeet Singh, Tsuyoshi Furukawa, Ramakrishnan Ayothi, Angelique Raley, Richard Farrell

JM3, Vol. 16, Issue 03, 033506, (August 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.3.033506

KEYWORDS: Oxides, Polymers, Extreme ultraviolet, Optical lithography, Head-mounted displays, Etching, Atomic layer deposition, Chemistry, Plasma enhanced chemical vapor deposition, Printing

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Proceedings Article | 27 April 2017 Presentation + Paper

Presentation + Paper

Advanced fast 3D DSA model development and calibration for design technology co-optimization

Kafai Lai, Balint Meliorisz, Thomas Muelders, Ulrich Welling, Hans-Jürgen Stock, Sajan Marokkey, Wolfgang Demmerle, Chi-Chun Liu, Cheng Chi, Jing Guo

Proceedings Volume 10144, 101440H (2017) https://doi.org/10.1117/12.2260379

KEYWORDS: 3D modeling, Calibration, Data modeling, Optical lithography, Nanotechnology, Very large scale integration, System on a chip, Logic, Research facilities

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Proceedings Article | 13 April 2017 Presentation + Paper

Presentation + Paper

Electrical study of DSA shrink process and CD rectification effect at sub-60nm using EUV test vehicle

Cheng Chi, Chi-Chun Liu, Luciana Meli, Jing Guo, Doni Parnell, Yann Mignot, Kristin Schmidt, Martha Sanchez, Richard Farrell, Lovejeet Singh, Tsuyoshi Furukawa, Kafai Lai, Yongan Xu, Daniel Sanders, David Hetzer, Andrew Metz, Sean Burns, Nelson Felix, John Arnold, Daniel Corliss

Proceedings Volume 10146, 101460Q (2017) https://doi.org/10.1117/12.2260454

KEYWORDS: Etching, Directed self assembly, Polymethylmethacrylate, Critical dimension metrology, Picosecond phenomena, Oxides, Scanning electron microscopy, Optical lithography, Extreme ultraviolet, Metals

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Proceedings Article | 28 March 2017 Paper

Paper

An OCD perspective of line edge and line width roughness metrology

Ravi Bonam, Raja Muthinti, Mary Breton, Chi-Chun Liu, Stuart Sieg, Indira Seshadri, Nicole Saulnier, Jeffrey Shearer, Raghuveer Patlolla, Huai Huang

Proceedings Volume 10145, 1014511 (2017) https://doi.org/10.1117/12.2258196

KEYWORDS: Line width roughness, Metrology, Edge roughness, Optical metrology, Process control, Line edge roughness, Semiconductors, Modeling, Scanning electron microscopy, Critical dimension metrology, Semiconducting wafers, Photomasks, 3D modeling, Extreme ultraviolet, Modulation

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Proceedings Article | 27 March 2017 Paper

Paper

DSA patterning options for logics and memory applications

Chi-Chun Liu, Elliott Franke, Yann Mignot, Scott LeFevre, Stuart Sieg, Cheng Chi, Luciana Meli, Doni Parnell, Kristin Schmidt, Martha Sanchez, Lovejeet Singh, Tsuyoshi Furukawa, Indira Seshadri, Ekmini Anuja De Silva, Hsinyu Tsai, Kafai Lai, Hoa Truong, Richard Farrell, Robert Bruce, Mark Somervell, Daniel Sanders, Nelson Felix, John Arnold, David Hetzer, Akiteru Ko, Andrew Metz, Matthew Colburn, Daniel Corliss

Proceedings Volume 10146, 1014603 (2017) https://doi.org/10.1117/12.2260479

KEYWORDS: Directed self assembly, Plasma etching, Optical lithography, Etching, Logic, Lithography, Manufacturing, Nanofabrication, Silicon, Metals, Extreme ultraviolet, Line edge roughness, Optical alignment, Critical dimension metrology

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Proceedings Article | 24 March 2017 Presentation + Paper

Presentation + Paper

Ultrathin EUV patterning stack using polymer brush as an adhesion promotion layer

Indira Seshadri, Anuja De Silva, Luciana Meli, Charlie Liu, Cheng Chi, Jing Guo, Kristin Schmidt, Hoa Truang, John Arnold, Nelson Felix, Lovejeet Singh, Tsuyoshi Furukawa, Ramakrishnan Ayothi, Angelique Raley, Richard Farrell

Proceedings Volume 10143, 101431D (2017) https://doi.org/10.1117/12.2258565

KEYWORDS: Extreme ultraviolet, Optical lithography, Polymers, Etching, Extreme ultraviolet lithography, Photoresist materials, Lithography, Photoresist processing, Back end of line, Oxides, Head-mounted displays, Atomic layer deposition, Chemistry

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Proceedings Article | 24 March 2017 Paper

Paper

Comprehensive analysis of line-edge and line-width roughness for EUV lithography

Ravi Bonam, Chi-Chun Liu, Mary Breton, Stuart Sieg, Indira Seshadri, Nicole Saulnier, Jeffrey Shearer, Raja Muthinti, Raghuveer Patlolla, Huai Huang

Proceedings Volume 10143, 101431A (2017) https://doi.org/10.1117/12.2258194

KEYWORDS: Line width roughness, Edge roughness, Lithography, Extreme ultraviolet lithography, Line edge roughness, Metrology, Photomasks, Semiconducting wafers, Semiconductors, Optical imaging, Photoresist processing, Etching, Extreme ultraviolet, Modulation

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Proceedings Article | 21 March 2017 Presentation + Paper

Presentation + Paper

Directed self-assembly patterning strategies for phase change memory applications

Robert Bruce, Gloria Fraczak, John Papalia, HsinYu Tsai, Matt BrightSky, Hiroyuki Miyazoe, Yu Zhu, Sebastian Engelmann, Hsiang-Lan Lung, Takeshi Masuda, Koukou Suu, Chi-Chun Liu, Hao Tang, John Arnold, Nelson Felix, Chung Lam

Proceedings Volume 10149, 101490J (2017) https://doi.org/10.1117/12.2257829

KEYWORDS: Plasma etching, Etching, Chalcogenides, Atomic layer deposition, Dry etching, Directed self assembly, Reactive ion etching, Picosecond phenomena, Polymethylmethacrylate, Scanning electron microscopy, Critical dimension metrology

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SPIE Journal Paper | 7 February 2017

Design technology co-optimization assessment for directed self-assembly-based lithography: design for directed self-assembly or directed self-assembly for design?

Kafai Lai, Chi-Chun Liu, Hsinyu Tsai, Yongan Xu, Cheng Chi, Ananthan Raghunathan, Parul Dhagat, Lin Hu, Oseo Park, Sunggon Jung, Wooyong Cho, Jaime Morillo, Jed Pitera, Kristin Schmidt, Mike Guillorn, Markus Brink, Daniel Sanders, Nelson Felix, Todd Bailey, Matthew Colburn

JM3, Vol. 16, Issue 01, 013502, (February 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.1.013502

KEYWORDS: Directed self assembly, Resolution enhancement technologies, Lithography, Metals, Optical lithography, Photomasks, 3D modeling, Computational lithography, Optical proximity correction

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Proceedings Article | 4 April 2016 Paper

Paper

DSA via hole shrink for advanced node applications

Cheng Chi, Chi-Chun Liu, Luciana Meli, Kristin Schmidt, Yongan Xu, Ekmini Anuja DeSilva, Martha Sanchez, Richard Farrell, Hongyun Cottle, Daiji Kawamura, Lovejeet Singh, Tsuyoshi Furukawa, Kafai Lai, Jed Pitera, Daniel Sanders, David Hetzer, Andrew Metz, Nelson Felix, John Arnold, Matthew Colburn

Proceedings Volume 9777, 97770L (2016) https://doi.org/10.1117/12.2219706

KEYWORDS: Directed self assembly, Polymethylmethacrylate, Picosecond phenomena, Etching, Global Positioning System, Critical dimension metrology, Optical lithography, Lithography, Extreme ultraviolet, Semiconducting wafers

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Proceedings Article | 1 April 2016 Paper

Paper

Strategies to enable directed self-assembly contact hole shrink for tight pitches

Kristin Schmidt, Hitoshi Osaki, Kota Nishino, Martha Sanchez, Chi-Chun Liu, Tsuyoshi Furukawa, Cheng Chi, Jed Pitera, Nelson Felix, Daniel Sanders

Proceedings Volume 9777, 97771U (2016) https://doi.org/10.1117/12.2219213

KEYWORDS: Surface properties, Integrated circuits, Semiconductors, Monte Carlo methods, Directed self assembly, Picosecond phenomena, Polymethylmethacrylate, Chemistry, Atomic force microscopy, Scattering, Lithography

Read Abstract +

Proceedings Article | 25 March 2016 Paper

Paper

High chi block copolymer DSA to improve pattern quality for FinFET device fabrication

HsinYu Tsai, Hiroyuki Miyazoe, Ankit Vora, Teddie Magbitang, Noel Arellano, Chi-Chun Liu, Michael Maher, William Durand, Simon Dawes, James Bucchignano, Lynne Gignac, Daniel Sanders, Eric Joseph, Matthew Colburn, C. Grant Willson, Christopher Ellison, Michael Guillorn

Proceedings Volume 9779, 977910 (2016) https://doi.org/10.1117/12.2219544

KEYWORDS: Line edge roughness, Line width roughness, Lithography, Polymers, Etching, Semiconductors, Manufacturing, Directed self assembly, Silicon, Plasma, Oxygen

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Proceedings Article | 22 March 2016 Paper

Paper

DSA patterning options for FinFET formation at 7nm node

Chi-Chun Liu, Elliott Franke, Fee Li Lie, Stuart Sieg, Hsinyu Tsai, Kafai Lai, Hoa Truong, Richard Farrell, Mark Somervell, Daniel Sanders, Nelson Felix, Michael Guillorn, Sean Burns, David Hetzer, Akiteru Ko, John Arnold, Matthew Colburn

Proceedings Volume 9777, 97770R (2016) https://doi.org/10.1117/12.2219670

KEYWORDS: Directed self assembly, Optical lithography, Lithography, Line edge roughness, Etching, Silicon, Image processing, Neodymium, Polymethylmethacrylate

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Proceedings Article | 20 March 2015 Paper

Paper

Directed self-assembly of topcoat-free, integration-friendly high-X block copolymers

Eri Hirahara, Margareta Paunescu, Orest Polishchuk, EunJeong Jeong, Edward Ng, Jianhui Shan, Jihoon Kim, SungEun Hong, Durairaj Baskaran, Guanyang Lin, Ankit Vora, Melia Tjio, Noel Arellano, Charles Rettner, Elizabeth Lofano, Chi-Chun Liu, Hsinyu Tsai, Anindarupa Chunder, Khanh Nguyen, Alexander Friz, Amy Bowers, Srinivasan Balakrishnan, Joy Cheng, Daniel Sanders

Proceedings Volume 9425, 94250P (2015) https://doi.org/10.1117/12.2087398

KEYWORDS: Scanning electron microscopy, Etching, Photomicroscopy, Dry etching, Annealing, Thin films, Plasma etching, Polymers, Coating, Directed self assembly

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Proceedings Article | 19 March 2015 Paper

Paper

Fin formation using graphoepitaxy DSA for FinFET device fabrication

Chi-Chun Liu, Fee Li Lie, Vinayak Rastogi, Elliott Franke, Nihar Mohanty, Richard Farrell, Hsinyu Tsai, Kafai Lai, Melih Ozlem, Wooyong Cho, Sung Gon Jung, Jay Strane, Mark Somervell, Sean Burns, Nelson Felix, Michael Guillorn, David Hetzer, Akiteru Ko, Matthew Colburn

Proceedings Volume 9423, 94230S (2015) https://doi.org/10.1117/12.2086053

KEYWORDS: Etching, Lithography, Silicon, Oxides, Atomic layer deposition, Scanning electron microscopy, Polymethylmethacrylate, Image processing, Directed self assembly

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Proceedings Article | 19 March 2015 Paper

Paper

Customization and design of directed self-assembly using hybrid prepatterns

Joy Cheng, Gregory Doerk, Charles Rettner, Gurpreet Singh, Melia Tjio, Hoa Truong, Noel Arellano, Srinivasan Balakrishnan, Markus Brink, Hsinyu Tsai, Chi-Chun Liu, Michael Guillorn, Daniel Sanders

Proceedings Volume 9423, 942307 (2015) https://doi.org/10.1117/12.2086973

KEYWORDS: Picosecond phenomena, Polymethylmethacrylate, System on a chip, Scanning electron microscopy, Image segmentation, Photomasks, Etching, Electron beam lithography, Composites, Directed self assembly

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Proceedings Article | 19 March 2015 Paper

Paper

Scatterometry-based defect detection for DSA in-line process control

Robin Chao, Chi-Chun Liu, Cornel Bozdog, Aron Cepler, Matthew Sendelbach, Oded Cohen, Shay Wolfling, Todd Bailey, Nelson Felix

Proceedings Volume 9424, 942419 (2015) https://doi.org/10.1117/12.2087093

KEYWORDS: Defect detection, Scatterometry, Semiconducting wafers, Scanning electron microscopy, Process control, Inspection, Metrology, Optical lithography, Image analysis, Directed self assembly

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Proceedings Article | 16 March 2015 Paper

Paper

Directed self assembly on resist-limited guiding patterns for hole grapho-epitaxy: Can DSA help lower EUV's source power requirements?

J. Torres, Fan Jiang, Yuansheng Ma, Joerg Mellman, Kafai Lai, Ananthan Raghunathan, Yongan Xu, Chi-Chun Liu, Cheng Chi

Proceedings Volume 9422, 94220W (2015) https://doi.org/10.1117/12.2085959

KEYWORDS: Line edge roughness, Extreme ultraviolet, Polymethylmethacrylate, Picosecond phenomena, Lithography, Polymers, Directed self assembly, Monte Carlo methods, Visualization, Extreme ultraviolet lithography

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Proceedings Article | 31 March 2014 Paper

Paper

Computational lithography platform for 193i-guided directed self-assembly

Kafai Lai, Melih Ozlem, Jed Pitera, Chi-chun Liu, Anthony Schepis, Daniel Dechene, Azalia Krasnoperova, Daniel Brue, Jassem Abdallah, Hsinyu Tsai, Mike Guillorn, Joy Cheng, Gregory Doerk, Melia Tjio, Rasit Topalogu, Moutaz Fakhry, Neal Lafferty

Proceedings Volume 9052, 90521A (2014) https://doi.org/10.1117/12.2046920

KEYWORDS: 3D modeling, Monte Carlo methods, Computational lithography, Photomasks, Critical dimension metrology, Lithography, Photoresist processing, Instrument modeling, Optical lithography, Directed self assembly

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Proceedings Article | 28 March 2014 Paper

Paper

Towards electrical testable SOI devices using Directed Self-Assembly for fin formation

Chi-Chun Liu, Cristina Estrada-Raygoza, Hong He, Michael Cicoria, Vinayak Rastogi, Nihar Mohanty, Hsinyu Tsai, Anthony Schepis, Kafai Lai, Robin Chao, Derrick Liu, Michael Guillorn, Jason Cantone, Sylvie Mignot, Ryoung-Han Kim, Joy Cheng, Melia Tjio, Akiteru Ko, David Hetzer, Mark Somervell, Matthew Colburn

Proceedings Volume 9049, 904909 (2014) https://doi.org/10.1117/12.2046462

KEYWORDS: Etching, Silicon, Polymethylmethacrylate, Semiconducting wafers, Scatterometry, Image processing, 3D modeling, Line edge roughness, Defect detection, Directed self assembly

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SPIE Journal Paper | 25 September 2013

Pattern transfer of directed self-assembly patterns for CMOS device applications

Hsin-Yu Tsai, Hiroyuki Miyazoe, Sebastian Engelmann, Lynne Gignac, James Bucchignano, David Klaus, Christopher Breslin, Eric Joseph, Joy Cheng, Daniel Sanders, Michael Guillorn, Chi-Chun Liu

JM3, Vol. 12, Issue 04, 041305, (September 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.4.041305

KEYWORDS: Etching, Optical lithography, Photomasks, Silicon, Carbon, Polymethylmethacrylate, Plasma, Metals, Line edge roughness, Directed self assembly

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Proceedings Article | 12 April 2013 Paper

Paper

Computational aspects of optical lithography extension by directed self-assembly

Kafai Lai, Chi-chun Liu, Jed Pitera, Daniel Dechene, Anthony Schepis, Jassem Abdallah, Hsinyu Tsai, Mike Guillorn, Joy Cheng, Gregory Doerk, Melia Tjio, Charles Rettner, Olalekan Odesanya, Melih Ozlem, Neal Lafferty

Proceedings Volume 8683, 868304 (2013) https://doi.org/10.1117/12.2012440

KEYWORDS: Photomasks, Optical lithography, Lithography, Optical proximity correction, Source mask optimization, 3D modeling, Extreme ultraviolet, Semiconducting wafers, Data modeling, Directed self assembly

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Proceedings Article | 26 March 2013 Paper

Paper

Directed self-assembly process implementation in a 300mm pilot line environment

Chi-Chun Liu, I. Cristina Estrada-Raygoza, Jassem Abdallah, Steven Holmes, Yunpeng Yin, Anthony Schepis, Michael Cicoria, David Hetzer, Hsinyu Tsai, Michael Guillorn, Melia Tjio, Joy Cheng, Mark Somervell, Matthew Colburn

Proceedings Volume 8680, 86801G (2013) https://doi.org/10.1117/12.2011610

KEYWORDS: Critical dimension metrology, Etching, Line width roughness, Semiconducting wafers, Optical lithography, Lithography, Chemical reactions, Photoresist processing, Polymethylmethacrylate, Directed self assembly

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Proceedings Article | 21 March 2012 Paper

Paper

Measurement of placement error between self-assembled polymer patterns and guiding chemical prepatterns

Gregory Doerk, Chi-Chun Liu, Joy Cheng, Charles Rettner, Jed Pitera, Leslie Krupp, Teya Topuria, Noel Arellano, Daniel Sanders

Proceedings Volume 8323, 83230P (2012) https://doi.org/10.1117/12.916421

KEYWORDS: Polymethylmethacrylate, Oxygen, Chemical analysis, Reactive ion etching, Polymers, Epitaxy, Etching, Error analysis, Lithography, Directed self assembly

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Proceedings Article | 21 March 2012 Paper

Paper

Progress towards the integration of optical proximity correction and directed self-assembly of block copolymers with graphoepitaxy

Chi-Chun Liu, Jed Pitera, Neal Lafferty, Kafai Lai, Charles Rettner, Melia Tjio, Noel Arellano, Joy Cheng

Proceedings Volume 8323, 83230X (2012) https://doi.org/10.1117/12.916525

KEYWORDS: Performance modeling, Monte Carlo methods, Optical proximity correction, Photomasks, Lithography, 3D modeling, Photoresist processing, Electron beam lithography, Double patterning technology, Directed self assembly

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Proceedings Article | 17 February 2011 Paper

Paper

Nanopatterned quantum dot active region lasers on InP substrates

L. Mawst, J. H. Park, Y. Huang, J. Kirch, Y. Sin, B. Foran, C.-C. Liu, P. Nealey, T. Kuech

Proceedings Volume 7953, 795304 (2011) https://doi.org/10.1117/12.875199

KEYWORDS: Nanostructures, Indium arsenide, Indium gallium arsenide, Quantum dots, Electroluminescence, Metalorganic chemical vapor deposition, Scanning electron microscopy, Dielectrics, Photomasks, Semiconductor lasers

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Proceedings Article | 28 August 2010 Paper

Paper

Dislocation reduction in CdTe epilayers grown on silicon substrates using buffered nanostructures

Shashidhar Shintri, Sunil Rao, Huafang Li, Ishwara Bhat, Smita Jha, C. Liu, Thomas Kuech, Witold Palosz, Sudhir Trivedi, Fred Semendy, Priyalal Wijewarnasuriya, Yuanping Chen

Proceedings Volume 7768, 77680A (2010) https://doi.org/10.1117/12.861735

KEYWORDS: Silicon, Nanostructures, Semiconducting wafers, Germanium, Oxides, Nanoparticles, Silicon films, Lithography, Metalorganic chemical vapor deposition, Nanocrystals

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SPIE Journal Paper | 1 January 2009

Nanoscale selective growth and optical characteristics of quantum dots on III-V substrates prepared by diblock copolymer nanopatterning

Joo Hyung Park, Chi-Chun Liu, Manish Rathi, Luke Mawst, Paul Nealey, Thomas Kuech

JNP, Vol. 3, Issue 01, 031604, (January 2009) https://doi.org/10.1117/12.10.1117/1.3085990

KEYWORDS: Gallium arsenide, Etching, Dielectrics, Plasma, Metalorganic chemical vapor deposition, Quantum dots, Nanostructures, Gallium, Photomasks, Dry etching

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Showing 5 of 36 publications

Conference Committee Involvement (10)

Novel Patterning Technologies 2025

24 February 2025 | San Jose, California, United States

Novel Patterning Technologies 2024

26 February 2024 | San Jose, California, United States

Novel Patterning Technologies 2023

27 February 2023 | San Jose, California, United States

Novel Patterning Technologies 2022

25 April 2022 | San Jose, California, United States

Novel Patterning Technologies 2021

22 February 2021 | Online Only, California, United States

Showing 5 of 10 Conference Committees

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