Dr. Chih Tsang Hung Profile

Dr. Chih Tsang Hung

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Proceedings Article | 26 September 2013 Paper

Optical mode modulation of AlGaInP multi quantum well laser diodes

Chih-Tsang Hung, Shen-Che Huang, Tien-Chang Lu

Proceedings Volume 8816, 88160L (2013) https://doi.org/10.1117/12.2024042

KEYWORDS: Near field optics, Silica, Dielectrics, Semiconductor lasers, Aluminium gallium indium phosphide, Absorption, Multilayers, Gallium arsenide, Lithium, Waveguides

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We investigate the influence of passivation structure on the optical mode distribution and LI characteristics for the edge emitting AlGaInP-GaInP visible laser diode (LD). For traditional single-layer Si₃N₄ or SiO₂ passivation designs, the modification of dielectric layer thickness can determinate the lateral near-field confinement and change the horizontal far-field (FF) divergence. By increasing the film thickness, the non-radiation absorption come from Au-Ti can be improved and it leads to a narrow FF divergence beam. As continue to increasing the thickness, thicker passivation provides a better confinement factor and then the far-field pattern turn to be wider. For LI characteristics, it is necessary to deposit a thick enough passivation to reduce metal absorption. However, it cause much thermal energy accumulated in the ridge waveguide and deteriorate the quantum efficiency as adopting a too thick dielectric layer. Finally, we demonstrate a high power AlGaInP-GaInP multi quantum wells (MQWs) LD adopted a high-reflectivity passivation to enhance the LI characteristics and keep a suitable far-field divergence angle simultaneously. Under the design of threepair optical thin films, it cannot only avoid the metal absorption but also enhance emitting efficiency and heat dissipation by using a high reflective and good thermal conductive Al₂O₃/Ta₂O₅ multilayer. The measured room-temperature threshold current (I_th) and characteristic temperature (T₀) can be arrived 44.5mA and 104.2K at 16.4° far-field divergence.

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