Mr. Christopher S. Ngai Profile

Christopher S. Ngai

Senior Director, Product Line Management at Applied Materials Inc

SPIE Involvement:

Author

Publications (34)

Proceedings Article | 16 October 2017 Presentation + Paper

Presentation + Paper

Development of amorphous silicon based EUV hardmasks through physical vapor deposition

Anuja De Silva, Yann Mignot, Luciana Meli, Scott DeVries, Yongan Xu, Indira Seshadri, Nelson Felix, Wilson Zeng, Yong Cao, Khoi Phan, Huixiong Dai, Christopher Ngai, Michael Stolfi, Daniel Diehl

Proceedings Volume 10450, 104501A (2017) https://doi.org/10.1117/12.2280607

KEYWORDS: Amorphous silicon, Optical lithography, Etching, Photoresist materials, Silicon, Head-mounted displays, Silicon films, Chemical vapor deposition, Extreme ultraviolet, Physical vapor deposition

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Proceedings Article | 2 April 2014 Paper

Paper

Tracking defectivity of EUV and SADP processing using bright-field inspection

Nadine Alexis, Chris Bencher, Yongmei Chen, Huixiong Dai, Kfir Dotan, Dale Huang, Alison Nalven, Chris Ngai, Gaetano Santoro, Bharath Vijayaraghavan, Peng Xie, Jun Xue

Proceedings Volume 9050, 905030 (2014) https://doi.org/10.1117/12.2048356

KEYWORDS: Inspection, Polarization, Extreme ultraviolet, Semiconducting wafers, Extreme ultraviolet lithography, Lithography, Photomasks, Signal to noise ratio, Wafer inspection, Metrology

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Proceedings Article | 27 March 2014 Paper

Paper

Novel and cost-effective multiple patterning technology by means of invisible SiOxNy hardmask

Linus Jang, Young Joon Moon, Ryoung-Han Kim, Christopher Bencher, Huixiong Dai, Peng Xie, Daniel Diehl, Yong Cao, Wilson Zeng, Christopher Ngai

Proceedings Volume 9051, 90510Y (2014) https://doi.org/10.1117/12.2046107

KEYWORDS: Photoresist materials, Optical lithography, Etching, Lithography, Semiconducting wafers, Silicon, System on a chip, Double patterning technology, Manufacturing, Reflectivity

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Proceedings Article | 12 April 2013 Paper

Paper

Impact of process decisions and alignment strategy on overlay for the 14nm node

David Laidler, Koen D’havé, Philippe Leray, Jan Hermans, Juergen Boemmels, Shaunee Cheng, Huixiong Dai, Yongmei Chen, Bencherki Mebarki, Chris Ngai

Proceedings Volume 8683, 868306 (2013) https://doi.org/10.1117/12.2011968

KEYWORDS: Optical alignment, Etching, Back end of line, Metals, Copper, Double patterning technology, Chemical mechanical planarization, Scanners, Neodymium, Optical lithography

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Proceedings Article | 1 April 2013 Paper

Paper

Process and proximity correction, and verification for extreme ultraviolet lithography

Gökhan Perçin, Huixiong Dai, Hsu-Ting Huang, Anwei Liu, Ali Mokhberi, Xin Zheng, Chris Ngai

Proceedings Volume 8679, 86790X (2013) https://doi.org/10.1117/12.2011666

KEYWORDS: Photomasks, Calibration, Extreme ultraviolet lithography, Semiconducting wafers, Lithography, Extreme ultraviolet, Ultraviolet radiation, Metals, High volume manufacturing, Semiconductors

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Proceedings Article | 1 April 2013 Paper

Paper

Towards manufacturing a 10nm node device with complementary EUV lithography

Jan Hermans, Huixiong Dai, Ardavan Niroomand, David Laidler, Ming Mao, Yongmei Chen, Philippe Leray, Chris Ngai, Shaunee Cheng

Proceedings Volume 8679, 86791K (2013) https://doi.org/10.1117/12.2012136

KEYWORDS: Semiconducting wafers, Extreme ultraviolet lithography, Etching, Extreme ultraviolet, Reticles, Critical dimension metrology, Optical lithography, Line width roughness, Manufacturing, Overlay metrology

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Proceedings Article | 29 March 2013 Paper

Paper

Post-litho line edge/width roughness smoothing by ion implantations

Tristan Ma, Peng Xie, Ludovic Godet, Patrick Martin, Chris Campbell, Jun Xue, Liyan Miao, Yongmei Chen, Huixiong Dai, Christopher Bencher, Chris Ngai

Proceedings Volume 8682, 868206 (2013) https://doi.org/10.1117/12.2013435

KEYWORDS: Ion implantation, Plasma, Semiconducting wafers, Line edge roughness, Etching, Ions, Line width roughness, Photoresist materials, Extreme ultraviolet, Plasma etching

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Proceedings Article | 29 March 2013 Paper

Paper

Understanding device impact of line edge/width roughness in frequency domain

Peng Xie, He Ren, Aneesh Nainani, Huixiong Dai, Chris Bencher, Chris Ngai

Proceedings Volume 8684, 86840J (2013) https://doi.org/10.1117/12.2013495

KEYWORDS: Line edge roughness, Line width roughness, Dielectric breakdown, Dielectrics, Spatial frequencies, Reliability, Lithography, TCAD, Neodymium

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Proceedings Article | 5 April 2012 Paper

Paper

Small particle defect characterization on critical layers of 22nm Spacer Self-Aligned Double Patterning (SADP)

Gurminder Singh, Kfir Dotan, Saar Shabtay, Man-Ping Cai, Noam Shachar, Chris Ngai, Chris Bencher, Liyan Miao, Yongmei Chen

Proceedings Volume 8324, 83241X (2012) https://doi.org/10.1117/12.918266

KEYWORDS: Particles, Lithography, Etching, Inspection, Defect detection, Double patterning technology, Defect inspection, Bridges, Wafer inspection, Semiconducting wafers

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Proceedings Article | 23 March 2012 Paper

Paper

Model calibration and slit position effect on full-mask process and proximity correction for extreme ultraviolet lithography

Hsu-Ting Huang, Huixiong Dai, Ali Mokhberi, Xumou Xu, Anwei Liu, Chris Ngai

Proceedings Volume 8322, 83221K (2012) https://doi.org/10.1117/12.916502

KEYWORDS: Calibration, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, Lithography, Finite element methods, Metals, Ultraviolet radiation, Back end of line

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Proceedings Article | 13 March 2012 Paper

Paper

Free form source and mask optimization for negative tone resist development for 22nm node contact holes

Tamer Coskun, Huixiong Dai, Vishnu Kamat, Ching-Mei Hsu, Gaetano Santoro, Chris Ngai, Mario Reybrouck, Grozdan Grozev, Hsu-Ting Huang

Proceedings Volume 8326, 83260V (2012) https://doi.org/10.1117/12.918459

KEYWORDS: Photomasks, Source mask optimization, Semiconducting wafers, Image processing, Electroluminescence, Standards development, Nanoimprint lithography, Optical lithography, 3D modeling, Data modeling

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SPIE Journal Paper | 1 October 2011

Toward 22 nm: fast and effective intrafield monitoring and optimization of process windows and critical dimension uniformity

Christopher Bencher, Jo Finders, Ilan Englard, Yaron Cohen, Amir Sagiv, Michael Ben-Yishai, Shmoolik Mangan, Huixiong Dai, Chris Ngai, Kfir Dotan, Roel Knops, Orion Mouraille, Evert Mos, Alexander Kremer

JM3, Vol. 10, Issue 04, 043003, (October 2011) https://doi.org/10.1117/12.10.1117/1.3641409

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Lithography, Metrology, Inspection, Scanners, Optimization (mathematics), Double patterning technology, Wavefronts

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Proceedings Article | 20 April 2011 Paper

Paper

Characterization of EUV resists for defectivity at 32nm

Ofir Montal, Ido Dolev, Moshe Rosenzweig, Kfir Dotan, Doron Meshulach, Ofer Adan, Shimon Levi, Man-Ping Cai, Chris Bencher, Chris Ngai, Christiane Jehoul, Dieter Van Den Heuvel, Eric Hendrickx

Proceedings Volume 7971, 79710G (2011) https://doi.org/10.1117/12.881323

KEYWORDS: Extreme ultraviolet, Semiconducting wafers, Extreme ultraviolet lithography, Bridges, Inspection, Scattering, Polarization, Photoresist processing, Light scattering, Neodymium

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Proceedings Article | 20 April 2011 Paper

Paper

Towards 22 nm: fast and effective intra-field monitoring and optimization of process windows and CDU

Yaron Cohen, Jo Finders, Roel Knops, Orion Mouraille, Ingrid Minnaert-Janssen, Frank Duray, Evert Mos, Alexander Kremer, Amir Sagiv, Shmoolik Mangan, Michael Ben Yishay, Huixiong Dai, Christopher Bencher, Christopher Ngai, Kfir Dotan, Ilan Englard

Proceedings Volume 7971, 79711N (2011) https://doi.org/10.1117/12.881657

KEYWORDS: Photomasks, Semiconducting wafers, Metrology, Lithography, Critical dimension metrology, Scanners, Inspection, Double patterning technology, Optimization (mathematics), Wavefronts

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Proceedings Article | 20 April 2011 Paper

Paper

EUV defect characterization study on post litho and etch for 1x and 2x node processes

Ofir Montal, Man-Ping Cai, Kfir Dotan, Ido Dolev, Tom Wallow, Obert Wood, Uzo Okoroanyanwu, Moshe Rozentsvige, Chris Ngai, Chris Bencher, Amiad Conley

Proceedings Volume 7971, 797126 (2011) https://doi.org/10.1117/12.881518

KEYWORDS: Etching, Extreme ultraviolet, Semiconducting wafers, Lithography, Deep ultraviolet, Scattering, Polarization, Bridges, Inspection, Light scattering

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Proceedings Article | 23 March 2011 Paper

Paper

Full-chip OPC and verification with a fast mask 3D model

Hsu-Ting Huang, Ali Mokhberi, Huixiong Dai, Chris Ngai

Proceedings Volume 7973, 79732R (2011) https://doi.org/10.1117/12.879841

KEYWORDS: 3D modeling, Optical proximity correction, Photomasks, 3D metrology, Semiconducting wafers, Calibration, Lithography, Scattering, Optical lithography, 3D image processing

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Proceedings Article | 23 March 2011 Paper

Paper

Spatial frequency multiplication techniques towards half-pitch 10nm patterning

Yijian Chen, Yongmei Chen, Liyan Miao, Ping Xu, Xumou Xu, Hao Chen, Pokhui Blanco, Raymond Hung, Chris Ngai

Proceedings Volume 7973, 79731T (2011) https://doi.org/10.1117/12.881661

KEYWORDS: Etching, Optical lithography, Oxides, Silicon, Lithography, Amorphous silicon, Image processing, Spatial frequencies, Electron beam lithography, Immersion lithography

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Proceedings Article | 23 March 2011 Paper

Paper

Recessive self-aligned double patterning with gap-fill technology

Yijian Chen, Xumou Xu, Yongmei Chen, Liyan Miao, Hao Chen, Pokhui Blanco, Chris Ngai

Proceedings Volume 7973, 79731S (2011) https://doi.org/10.1117/12.881658

KEYWORDS: Etching, Double patterning technology, Oxides, Lithography, Photomasks, Optical lithography, Back end of line, 193nm lithography, Image processing, Front end of line

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Proceedings Article | 23 March 2011 Paper

Paper

Innovative self-aligned triple patterning for 1x half pitch using single "spacer deposition-spacer etch" step

Bencherki Mebarki, Hao D. Chen, Yongmei Chen, Aunchan Wang, Jingmei Liang, Kedar Sapre, Tushar Mandrekar, Xiaolin Chen, Ping Xu, Pokhui Blanko, Christopher Ngai, Chris Bencher, Mehul Naik

Proceedings Volume 7973, 79730G (2011) https://doi.org/10.1117/12.881574

KEYWORDS: Etching, Optical lithography, Photomasks, Oxides, Immersion lithography, Tin, Dry etching, Critical dimension metrology, Back end of line, Dielectrics

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Proceedings Article | 23 March 2011 Paper

Paper

Sidewall spacer quadruple patterning for 15nm half-pitch

Ping Xu, Yongmei Chen, Yijian Chen, Liyan Miao, Shiyu Sun, Sung-Woo Kim, Ami Berger, Daxin Mao, Christ Bencher, Raymond Hung, Chris Ngai

Proceedings Volume 7973, 79731Q (2011) https://doi.org/10.1117/12.881547

KEYWORDS: Etching, Optical lithography, Silicon, Scanning electron microscopy, Line width roughness, Lithography, Double patterning technology, Semiconducting wafers, Oxides, Neodymium

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Proceedings Article | 23 March 2011 Paper

Paper

Accounting for mask topography effects in source-mask optimization for advanced nodes

Tamer Coskun, Huixiong Dai, Hsu-Ting Huang, Vishnu Kamat, Chris Ngai

Proceedings Volume 7973, 79730P (2011) https://doi.org/10.1117/12.879704

KEYWORDS: Photomasks, 3D modeling, Source mask optimization, Data modeling, Semiconducting wafers, Optimization (mathematics), Calibration, Optical proximity correction, Contrast sensitivity, Nanoimprint lithography

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Proceedings Article | 23 March 2011 Paper

Paper

Self-aligned triple patterning for continuous IC scaling to half-pitch 15nm

Yijian Chen, Ping Xu, Liyan Miao, Yongmei Chen, Xumou Xu, Daxin Mao, Pokhui Blanco, Chris Bencher, Raymond Hung, Chris Ngai

Proceedings Volume 7973, 79731P (2011) https://doi.org/10.1117/12.881645

KEYWORDS: Photomasks, Optical lithography, Oxides, Etching, Lithography, Silicon, Immersion lithography, Electron beam lithography, Line width roughness, Line edge roughness

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Proceedings Article | 4 March 2010 Paper

Paper

Self-aligned double patterning process for 32/32nm contact/space and beyond using 193 immersion lithography

Bencherki Mebarki, Liyan Miao, Yongmei Chen, James Yu, Pokhui Blanco, James Makeeff, Jen Shu, Christopher Bencher, Mehul Naik, Christopher Sui Wing Ngai

Proceedings Volume 7640, 764023 (2010) https://doi.org/10.1117/12.862583

KEYWORDS: Double patterning technology, Photomasks, Etching, Optical lithography, Immersion lithography, Silicon, Extreme ultraviolet lithography, 193nm lithography, Lithography, Oxides

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Proceedings Article | 1 April 2009 Paper

Paper

Sub-20 nm trench patterning with a hybrid chemical shrink and SAFIER process

Yijian Chen, Xumou Xu, Hao Chen, Liyan Miao, Pokhui Blanco, Man-Ping Cai, Chris Ngai

Proceedings Volume 7273, 72733I (2009) https://doi.org/10.1117/12.814382

KEYWORDS: Line edge roughness, Photoresist processing, Semiconducting wafers, Optical lithography, Etching, Photomasks, Scanning electron microscopy, Chemical reactions, Lithography, Manufacturing

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Proceedings Article | 16 March 2009 Paper

Paper

Alignment and overlay improvements for 3x nm and beyond process with CVD sidewall spacer double patterning

Huixiong Dai, Chris Bencher, Yongmei Chen, Shiyu Sun, Xumou Xu, Chris Ngai

Proceedings Volume 7274, 72743G (2009) https://doi.org/10.1117/12.814376

KEYWORDS: Optical alignment, Semiconducting wafers, Photomasks, Double patterning technology, Optical lithography, Scanners, Etching, Chemical vapor deposition, Manufacturing, Lithography

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Proceedings Article | 16 March 2009 Paper

Paper

Demonstration of 32nm half-pitch electrical testable NAND FLASH patterns using self-aligned double patterning

Shiyu Sun, Chris Bencher, Yongmei Chen, Huixiong Dai, Man-Ping Cai, Jaklyn Jin, Pokhui Blanco, Liyan Miao, Ping Xu, Xumou Xu, James Yu, Raymond Hung, Shiany Oemardani, Osbert Chan, Chorng-Ping Chang, Chris Ngai

Proceedings Volume 7274, 72740D (2009) https://doi.org/10.1117/12.814403

KEYWORDS: Lithography, Resistance, Etching, Double patterning technology, Photomasks, Optical lithography, Scanning electron microscopy, Oxides, Photoresist materials, Line edge roughness

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Proceedings Article | 13 March 2009 Paper

Paper

Implementing self-aligned double patterning on non-gridded design layouts

Huixiong Dai, Jason Sweis, Chris Bencher, Yongmei Chen, Jen Shu, Xumou Xu, Chris Ngai, Judy Huckabay, Milind Weling

Proceedings Volume 7275, 72751E (2009) https://doi.org/10.1117/12.814423

KEYWORDS: Photomasks, Double patterning technology, Etching, Scanners, Lithography, Manufacturing, Logic, Optical lithography, Electronic design automation, Optical proximity correction

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Proceedings Article | 4 December 2008 Paper

Paper

Challenges of 29nm half-pitch NAND Flash STI patterning with 193nm dry lithography and self-aligned double patterning

M. C. Chiu, Benjamin Szu-Min Lin, M. F. Tsai, Y. S. Chang, M. H. Yeh, T. H. Ying, Chris Ngai, Jaklyn Jin, Stephen Yuen, Sem Huang, Yongmei Chen, Liyan Miao, Kevin Tai, Amiad Conley, Ian Liu

Proceedings Volume 7140, 714021 (2008) https://doi.org/10.1117/12.804685

KEYWORDS: Etching, Double patterning technology, Lithography, Optical lithography, Line width roughness, Manufacturing, Scanners, Semiconducting wafers, Line edge roughness, 193nm lithography

Read Abstract +

High NA (1.35) Immersion litho runs into the fundamental limit of printing at 40-45nm half pitch (HP). The next generation EUVL tool is known to be ready not until year 2012. Double patterning (DP) technology has been identified as the extension of optical photolithography technologies to 3xnm and 2xnm half-pitch for the low k1 regime to fill in the gap between Immersion lithography and EUVL. Self Aligned Double Patterning (SADP) Technology utilized mature process technology to reduce risk and faster time to market to support the continuation of Moore's Law of Scaling to reduce the cost/function. SADP uses spacer to do the pitch splitting bypass the conventional double patterning (e.g. Litho-Freeze-Litho-Etch (LFLE), or Litho-Etch-Litho-Etch (LELE)) overlay problem. Having a tight overlay performance is extremely critical for NAND Flash manufacturers to achieve a fast yield ramp in production. This paper describes the challenges and accomplishment of a Line-By-Spacer (LBS) SADP scheme to pattern the 29nm half-pitch NAND Flash STI application. A 193nm Dry lithography was chosen to pattern on top of the amorphous carbon (a-C) film stack. The resist pattern will be transferred on the top a-C core layer follow by spacer deposition and etch to achieve the pitch splitting. Then the spacer will be used to transfer to the bottom a-C universal hardmask. This high selectivity a-C hardmask will be used to transfer the 29nm half-pitch pattern to the STI. Good within wafer CD uniformity (CDU) <2nm and line width roughness (LWR) <2nm for the 29nm half-pitch NAND FLASH STI were demonstrated as the benefits using double amorphous carbon hardmask layers. The relationships among the photoresist CDs, CD trimming , as-deposited spacer film thickness, spacer width and the final STI line/core space/gap space CDs will also be discussed in this paper since patterning is combining both lithography performance with CVD and Etch process performance. Film selection for amorphous carbon and the complete DP hardmask scheme in terms of etching selectivity, optical properties and stress optimization was another key challenge to balance excellent litho alignment signal strength and straight pattern profiles without line bending effects. Etching efforts also played a very important roll to obtain pattern integrality under such a high aspect ratio (> 10) case through the whole SADP process. Finally, cost analysis for 193nm dry lithography SADP will be compared to 193nm Immersion lithography SADP.

Proceedings Article | 1 April 2008 Paper

Paper

Double patterning combined with shrink technique to extend ArF lithography for contact holes to 22nm node and beyond

Xiangqun Miao, Lior Huli, Hao Chen, Xumou Xu, Hyungje Woo, Chris Bencher, Jen Shu, Chris Ngai, Christopher Borst

Proceedings Volume 6924, 69240A (2008) https://doi.org/10.1117/12.772024

KEYWORDS: Double patterning technology, Etching, Lithography, Amorphous silicon, Scanning electron microscopy, Tin, Photomasks, Semiconducting wafers, Resolution enhancement technologies, Extreme ultraviolet

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Proceedings Article | 25 March 2008 Paper

Paper

Wafer edge polishing process for defect reduction during immersion lithography

Motoya Okazaki, Raymond Maas, Sen-Hou Ko, Yufei Chen, Paul Miller, Mani Thothadri, Manjari Dutta, Chorng-Ping Chang, Abraham Anapolsky, Chris Lazik, Yuri Uritsky, Martin Seamons, Deenesh Padhi, Wendy Yeh, Stephan Sinkwitz, Chris Ngai

Proceedings Volume 6922, 69223A (2008) https://doi.org/10.1117/12.773113

KEYWORDS: Semiconducting wafers, Polishing, Immersion lithography, Particles, Lithography, Inspection, Surface finishing, Manufacturing, Etching, Chemistry

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Proceedings Article | 22 March 2008 Paper

Paper

Metrology characterization for self-aligned double patterning

Ami Berger, Sergey Latinsky, Maayan Bar-Zvi, Ram Peltinov, Jen Shu, Chris Ngai, James Yu, Huixiong Dai

Proceedings Volume 6922, 692211 (2008) https://doi.org/10.1117/12.774408

KEYWORDS: Line edge roughness, Etching, Semiconducting wafers, Scanning electron microscopy, Double patterning technology, Metrology, Line width roughness, Edge roughness, Process control, Critical dimension metrology

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Proceedings Article | 7 March 2008 Paper

Paper

45nm and 32nm half-pitch patterning with 193nm dry lithography and double patterning

Huixiong Dai, Chris Bencher, Yongmei Chen, Hyungje Woo, Chris Ngai, Xumou Xu

Proceedings Volume 6924, 692421 (2008) https://doi.org/10.1117/12.772260

KEYWORDS: Etching, Double patterning technology, Metals, Photomasks, Optical lithography, Lithography, Line width roughness, Overlay metrology, Line edge roughness, Chemical vapor deposition

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Proceedings Article | 27 March 2007 Paper

Paper

RET application in 45-nm node and 32-nm node contact hole dry ArF lithography process development

Xiangqun Miao, Xumou Xu, Yongmei Chen, Chris Ordonio, Chris Bencher, Chris Ngai

Proceedings Volume 6520, 65201F (2007) https://doi.org/10.1117/12.707782

KEYWORDS: Optical proximity correction, Photomasks, Lithography, Etching, Resolution enhancement technologies, Double patterning technology, Scanning electron microscopy, Semiconducting wafers, Neodymium, Data modeling

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Proceedings Article | 27 August 1998 Paper

Paper

Plasma damage monitoring for PECVD deposition: a contact potential difference study and device yield analysis

Zhiwei Xu, Christopher Bencher, Maggie Le, Chris Ngai

Proceedings Volume 3509, (1998) https://doi.org/10.1117/12.324402

KEYWORDS: Plasma, Oxides, Polysomnography, Semiconducting wafers, Plasma enhanced chemical vapor deposition, Deposition processes, Antennas, Manufacturing, Yield improvement, Silicon

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Showing 5 of 34 publications

Conference Committee Involvement (16)

Optical and EUV Nanolithography XXXVI

27 February 2023 | San Jose, California, United States

Optical and EUV Nanolithography XXXV

25 April 2022 | San Jose, California, United States

International Conference on Extreme Ultraviolet Lithography 2021

27 September 2021 | Online Only, United States

Extreme Ultraviolet (EUV) Lithography XII

22 February 2021 | Online Only, California, United States

International Conference on Extreme Ultraviolet Lithography 2020

21 September 2020 | Online Only, California, United States

Extreme Ultraviolet (EUV) Lithography XI

24 February 2020 | San Jose, California, United States

International Conference on Extreme Ultraviolet Lithography 2019

16 September 2019 | Monterey, California, United States

Extreme Ultraviolet (EUV) Lithography X

25 February 2019 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography IX

26 February 2018 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography VIII

27 February 2017 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography VII

22 February 2016 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography VI

23 February 2015 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography V

24 February 2014 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography IV

25 February 2013 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography III

13 February 2012 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography II

28 February 2011 | San Jose, California, United States

Showing 5 of 16 Conference Committees

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