Mr. Chris Strolenberg Profile

Chris Strolenberg

at ASML Netherlands BV

SPIE Involvement:

Author

Publications (3)

Proceedings Article | 24 March 2017 Presentation + Paper

Scanner-to-scanner CD analysis and control in an HVM environment

Du Hyun Beak, Ju Hee Shin, Tony Park, Dong Kyeng Han, Jin Phil Choi, Jeong Heung Kong, Young Seog Kang, Se Yeon Jang, Peter Nikolsky, Chris Strolenberg, Noh-Kyoung Park, Khalid Elbattay, Vito Tomasello, Austin Peng, Anand Guntuka, Zhao-Ze Li, Ronald Goossens, Machi Ryu, Jangho Shin, Chung-Yong Kim, Andrew Moe, Yun-A Sung

Proceedings Volume 10147, 101470A (2017) https://doi.org/10.1117/12.2258339

KEYWORDS: Critical dimension metrology, Scanners, Lithographic illumination, Image processing, Process control, Computational lithography, Semiconducting wafers, Data modeling, Metrology, Photomasks, Calibration, Finite element methods, Laser scanners, 3D scanning

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SPIE Journal Paper | 18 March 2013

Mask characterization for critical dimension uniformity budget breakdown in advanced extreme ultraviolet lithography

Peter Nikolsky, Chris Strolenberg, Rasmus Nielsen, Tjitte Nooitgedacht, Natalia Davydova, Greg Yang, Shawn Lee, Chang-Min Park, Insung Kim, Jeongho Yeo

JM3, Vol. 12, Issue 02, 021006, (March 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.2.021006

KEYWORDS: Photomasks, Reticles, Critical dimension metrology, Semiconducting wafers, Extreme ultraviolet lithography, Extreme ultraviolet, Cadmium, Reflectivity, Scanners, Semiconductors

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As the International Technology Roadmap for Semiconductors critical dimension uniformity (CDU) specification shrinks, semiconductor companies need to maintain a high yield of good wafers per day and high performance (and hence market value) of finished products. This cannot be achieved without continuous analysis and improvement of on-product CDU as one of the main drivers for process control and optimization with better understanding of main contributors from the litho cluster: mask, process, metrology and scanner. We will demonstrate a study of mask CDU characterization and its impact on CDU Budget Breakdown (CDU BB) performed for advanced extreme ultraviolet (EUV) lithography with 1D (dense lines) and 2D (dense contacts) feature cases. We will show that this CDU contributor is one of the main differentiators between well-known ArFi and new EUV CDU budgeting principles. We found that reticle contribution to intrafield CDU should be characterized in a specific way: mask absorber thickness fingerprints play a role comparable with reticle CDU in the total reticle part of the CDU budget. Wafer CD fingerprints, introduced by this contributor, may or may not compensate variations of mask CDs and hence influence on total mask impact on intrafield CDU at the wafer level. This will be shown on 1D and 2D feature examples. Mask stack reflectivity variations should also be taken into account: these fingerprints have visible impact on intrafield CDs at the wafer level and should be considered as another contributor to the reticle part of EUV CDU budget. We also observed mask error enhancement factor (MEEF) through field fingerprints in the studied EUV cases. Variations of MEEF may play a role towards the total intrafield CDU and may need to be taken into account for EUV lithography. We characterized MEEF-through-field for the reviewed features, with results herein, but further analysis of this phenomenon is required. This comprehensive approach to quantifying the mask part of the overall EUV CDU contribution helps deliver an accurate and integral CDU BB per product/process and litho tool. The better understanding of the entire CDU budget for advanced EUVL nodes achieved by Samsung and ASML helps extend the limits of Moore’s Law and to deliver successful implementation of smaller, faster and smarter chips in semiconductor industry.

Proceedings Article | 8 November 2012 Paper

Mask characterization for CDU budget breakdown in advanced EUV lithography

Peter Nikolsky, Chris Strolenberg, Rasmus Nielsen, Tjitte Nooitgedacht, Natalia Davydova, Greg Yang, Shawn Lee, Chang-Min Park, Insung Kim, Jeong-Ho Yeo

Proceedings Volume 8522, 85220P (2012) https://doi.org/10.1117/12.970395

KEYWORDS: Photomasks, Reticles, Semiconducting wafers, Extreme ultraviolet, Extreme ultraviolet lithography, Critical dimension metrology, Scanners, Reflectivity, Cadmium, Semiconductors

Read Abstract +

As the ITRS Critical Dimension Uniformity (CDU) specification shrinks, semiconductor companies need to maintain a high yield of good wafers per day and a high performance (and hence market value) of finished products. This cannot be achieved without continuous analysis and improvement of on-product CDU as one of the main drivers for process control and optimization with better understanding of main contributors from the litho cluster: mask, process, metrology and scanner. In this paper we will demonstrate a study of mask CDU characterization and its impact on CDU Budget Breakdown (CDU BB) performed for an advanced EUV lithography with 1D and 2D feature cases. We will show that this CDU contributor is one of the main differentiators between well-known ArFi and new EUV CDU budgeting principles. We found that reticle contribution to intrafield CDU should be characterized in a specific way: mask absorber thickness fingerprints play a role comparable with reticle CDU in the total reticle part of the CDU budget. Wafer CD fingerprints, introduced by this contributor, may or may not compensate variations of mask CD’s and hence influence on total mask impact on intrafield CDU at the wafer level. This will be shown on 1D and 2D feature examples in this paper. Also mask stack reflectivity variations should be taken into account: these fingerprints have visible impact on intrafield CDs at the wafer level and should be considered as another contributor to the reticle part of EUV CDU budget. We observed also MEEF-through-field fingerprints in the studied EUV cases. Variations of MEEF may also play a role for the total intrafield CDU and may be taken into account for EUV Lithography. We characterized MEEF-through-field for the reviewed features, the results to be discussed in our paper, but further analysis of this phenomenon is required. This comprehensive approach to characterization of the mask part of EUV CDU characterization delivers an accurate and integral CDU Budget Breakdown per product/process and Litho tool. The better understanding of the entire CDU budget for advanced EUVL nodes achieved by Samsung and ASML helps to extend the limits of Moore's Law and to deliver successful implementation of smaller, faster and smarter chips in semiconductor industry.

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