Dr. Christian Wagner Profile

Dr. Christian Wagner

Director of Product Management EUVL at ASML Netherlands BV

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Publications (22)

Proceedings Article | 22 February 2021 Presentation

Imaging enhancement (low k1 imaging) in EUV lithography: current status and future resolution enhancement techniques

Jo Finders, Christian Wagner

Proceedings Volume 11609, 1160909 (2021) https://doi.org/10.1117/12.2584805

KEYWORDS: Extreme ultraviolet lithography, Resolution enhancement technologies, Photomasks, Nanoimprint lithography, Lithographic illumination, Imaging systems, Extreme ultraviolet, Source mask optimization, Scanners, Logic

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Proceedings Article | 18 March 2016 Paper

EUV lithography performance for manufacturing: status and outlook

Alberto Pirati, Rudy Peeters, Daniel Smith, Sjoerd Lok, Martijn van Noordenburg, Roderik van Es, Eric Verhoeven, Henk Meijer, Arthur Minnaert, Jan-Willem van der Horst, Hans Meiling, Joerg Mallmann, Christian Wagner, Judon Stoeldraijer, Geert Fisser, Jo Finders, Carmen Zoldesi, Uwe Stamm, Herman Boom, David Brandt, Daniel Brown, Igor Fomenkov, Michael Purvis

Proceedings Volume 9776, 97760A (2016) https://doi.org/10.1117/12.2220423

KEYWORDS: Extreme ultraviolet, Overlay metrology, Extreme ultraviolet lithography, Manufacturing, Pellicles, Logic devices, Semiconducting wafers, Reticles, Photomasks, Scanners, Fiber optic illuminators, Tin

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Proceedings Article | 16 March 2015 Paper

Performance optimization of MOPA pre-pulse LPP light source

Alexander Schafgans, Daniel Brown, Igor Fomenkov, Rick Sandstrom, Alex Ershov, Georgiy Vaschenko, Rob Rafac, Michael Purvis, Slava Rokitski, Yezheng Tao, Daniel Riggs, Wayne Dunstan, Matthew Graham, Nigel Farrar, David Brandt, Norbert Böwering, Alberto Pirati, Noreen Harned, Christian Wagner, Hans Meiling, Ron Kool

Proceedings Volume 9422, 94220B (2015) https://doi.org/10.1117/12.2087421

KEYWORDS: Extreme ultraviolet, Light sources, Pulsed laser operation, Extreme ultraviolet lithography, Plasma, Amplifiers, High power lasers, Tin, Laser energy, High volume manufacturing

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Proceedings Article | 13 March 2015 Paper

Performance overview and outlook of EUV lithography systems

Alberto Pirati, Rudy Peeters, Daniel Smith, Sjoerd Lok, Arthur W. Minnaert, Martijn van Noordenburg, Jörg Mallmann, Noreen Harned, Judon Stoeldraijer, Christian Wagner, Carmen Zoldesi, Eelco van Setten, Jo Finders, Koen de Peuter, Chris de Ruijter, Milos Popadic, Roger Huang, Martin Lin, Frank Chuang, Roderik van Es, Marcel Beckers, David Brandt, Nigel Farrar, Alex Schafgans, Daniel Brown, Herman Boom, Hans Meiling, Ron Kool

Proceedings Volume 9422, 94221P (2015) https://doi.org/10.1117/12.2085912

KEYWORDS: Semiconducting wafers, Pellicles, Extreme ultraviolet, Reticles, Extreme ultraviolet lithography, Imaging systems, Logic, Scanners, Manufacturing, Overlay metrology

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Proceedings Article | 23 March 2012 Paper

From performance validation to volume introduction of ASML's NXE platform

Hans Meiling, Wim de Boeij, Frank Bornebroek, Noreen Harned, Ivo de Jong, Peter Kűrz, Martin Lowisch, Henk Meijer, David Ockwell, Rudy Peeters, Eelco van Setten, Judon Stoeldraijer, Christian Wagner, Stuart Young, Ron Kool

Proceedings Volume 8322, 83221G (2012) https://doi.org/10.1117/12.916971

KEYWORDS: Semiconducting wafers, Reticles, Extreme ultraviolet lithography, Extreme ultraviolet, Scanners, Mirrors, Photomasks, Particles, Overlay metrology, Line width roughness

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Proceedings Article | 14 October 2011 Paper

Holistic lithography for EUV: NXE:3100 characterization of first printed wafers using an advanced scanner model and scatterometry

Frank A. J. M. Driessen, Natalia Davydova, J. Jiang, H. Kang, V. Vaenkatesan, D. Oorschot, I. Kim, S. Kang, Y. Lee, J. Yeo, K. Gronlund, H. Liu, K. van Ingen-Schenau, R. Peeters, C. Wagner, J. Zimmermann, O. Schumann

Proceedings Volume 8166, 81660Z (2011) https://doi.org/10.1117/12.898955

KEYWORDS: Semiconducting wafers, Scanners, Photomasks, Lithography, Extreme ultraviolet lithography, Extreme ultraviolet, Reflectivity, Deep ultraviolet, Metrology, Critical dimension metrology

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Proceedings Article | 7 April 2011 Paper

EUV lithography at chipmakers has started: performance validation of ASML's NXE:3100

Christian Wagner, Jose Bacelar, Noreen Harned, Erik Loopstra, Stef Hendriks, Ivo de Jong, Peter Kuerz, Leon Levasier, Mark van de Kerkhof, Martin Lowisch, Hans Meiling, David Ockwell, Rudy Peeters, Eelco van Setten, Judon Stoeldraijer, Stuart Young, John Zimmerman, Ron Kool

Proceedings Volume 7969, 79691F (2011) https://doi.org/10.1117/12.878603

KEYWORDS: Semiconducting wafers, Reticles, Extreme ultraviolet lithography, Overlay metrology, Optical proximity correction, Manufacturing, Extreme ultraviolet, Contamination, High volume manufacturing, Optics manufacturing

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Proceedings Article | 2 April 2011 Paper

Imaging performance improvements by EUV mask stack optimization

Natalia Davydova, Eelco van Setten, Robert de Kruif, Dorothe Oorschot, Mircea Dusa, Christian Wagner, Jiong Jiang, Wei Liu, Hoyoung Kang, Hua-yu Liu, Petra Spies, Nils Wiese, Markus Waiblinger

Proceedings Volume 7985, 79850X (2011) https://doi.org/10.1117/12.884504

KEYWORDS: Photomasks, Reflectivity, Extreme ultraviolet, Critical dimension metrology, Extreme ultraviolet lithography, Semiconducting wafers, Optical proximity correction, 3D modeling, Data modeling, Reflection

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EUVL requires the use of reflective optics including a reflective mask. The mask contains a reflecting multilayer, tuned for 13.5 nm light, and an absorber which defines the dark areas. The EUV mask itself is a complex optical element with many more parameters than just the mask CD uniformity of the patterned features that impact the final wafer CDU. One of these parameters is absorber height. It has been shown that the oblique incidence of light in combination with the small wavelength compared to the mask topography causes a so-called shadowing effect manifesting itself particularly in an HV wafer CD offset. It was also shown that this effect can be essentially decreased by reducing absorber height and, in addition, it can be corrected by means of OPC. However, reduction of absorber height has a side effect that is an increased reflectivity of a mask black border resulting in field-to-field stray light due to parasitic reflections. One of the solutions to this problem is optical process correction (OPC) at field edges. In this paper we will show experimental data obtained on ASML EUV Alpha tool illustrating the black border effect and will demonstrate that this effect can be accurately predicted by Brion Tachyon EUV model allowing for a significant cross field CD uniformity improvement with mask layout correction technique. Also we show by means of rigorous 3D simulations that it is possible to improve the imaging performance significantly by performing global optimization of mask absorber height and mask bias in order to increase exposure latitude, decrease CD sensitivity to mask making variations such as CD mask error and absorber stack height variations. By sacrificing some exposure latitude throughput of exposure tool can be increased essentially and HV mask biasing can be reduced. For four masks with different absorber thicknesses from 44 nm to 87 nm it is proven experimentally by means of the EUV Alpha tool exposures of 27 nm L/S that the absorber thickness can be tuned to maximize exposure latitude. It was also proven that dose to size grows with absorber height and optimal feature bias depends on mask absorber height.

Proceedings Article | 29 September 2010 Paper

EUV mask stack optimization for enhanced imaging performance

Eelco van Setten, Dorothe Oorschot, Cheuk-Wah Man, Mircea Dusa, Robert de Kruif, Natalia Davydova, Kees Feenstra, Christian Wagner, Petra Spies, Nils Wiese, Markus Waiblinger

Proceedings Volume 7823, 78231O (2010) https://doi.org/10.1117/12.864247

KEYWORDS: Photomasks, Extreme ultraviolet, Critical dimension metrology, Reticles, Semiconducting wafers, Reflectivity, Extreme ultraviolet lithography, Optical proximity correction, Scanning electron microscopy, Etching

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Proceedings Article | 20 March 2010 Paper

EUV into production with ASML's NXE platform

Christian Wagner, Noreen Harned, Peter Kuerz, Martin Lowisch, Hans Meiling, David Ockwell, Rudy Peeters, Koen van Ingen-Schenau, Eelco van Setten, Judon Stoeldraijer, Bernd Thuering

Proceedings Volume 7636, 76361H (2010) https://doi.org/10.1117/12.845700

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, Reticles, Optics manufacturing, Lithography, System integration, Mirrors, Lithographic illumination, Optical alignment

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Proceedings Article | 10 December 2009 Paper

EUVL: towards implementation in production

Hans Meiling, Nico Buzing, Kevin Cummings, Noreen Harned, Bas Hultermans, Roel De Jonge, Bart Kessels, Peter Kürz, Sjoerd Lok, Martin Lowisch, Joerg Mallman, Bill Pierson, Christian Wagner, Andre Van Dijk, Eelco Van Setten, John Zimmerman, Peter Cheang, Alek Chen

Proceedings Volume 7520, 752008 (2009) https://doi.org/10.1117/12.845781

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Extreme ultraviolet, Reticles, Reflectivity, Semiconducting wafers, Optics manufacturing, Lithography, Plasma, Tin

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Proceedings Article | 27 May 2009 Paper

EUV imaging performance: moving towards production

Eelco van Setten, Sjoerd Lok, Joep van Dijk, Cemil Kaya, Koen van Ingen Schenau, Kees Feenstra, Hans Meiling, Christian Wagner

Proceedings Volume 7470, 74700G (2009) https://doi.org/10.1117/12.835178

KEYWORDS: Semiconducting wafers, Photomasks, Extreme ultraviolet lithography, Line width roughness, Reticles, Extreme ultraviolet, Logic, Electroluminescence, Optical proximity correction, Silicon

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Proceedings Article | 18 March 2009 Open Access

EUVL system: moving towards production

Hans Meiling, Nico Buzing, Kevin Cummings, Noreen Harned, Bas Hultermans, Roel de Jonge, Bart Kessels, Peter Kürz, Sjoerd Lok, Martin Lowisch, Joerg Mallman, Bill Pierson, Christian Wagner, Andre van Dijk, Eelco van Setten, John Zimmerman

Proceedings Volume 7271, 727102 (2009) https://doi.org/10.1117/12.814041

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Extreme ultraviolet, Semiconducting wafers, Mirrors, Reticles, Tin, Reflectivity, Plasma, Lithography

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Proceedings Article | 21 March 2008 Paper

Performance of the full field EUV systems

Hans Meiling, Edwin Boon, Nico Buzing, Kevin Cummings, Olav Frijns, Judy Galloway, Mieke Goethals, Noreen Harned, Bas Hultermans, Roel de Jonge, Bart Kessels, Peter Kürz, Sjoerd Lok, Martin Lowisch, Joerg Mallman, Bill Pierson, Kurt Ronse, James Ryan, Emil Smitt-Weaver, Michael Tittnich, Christian Wagner, Andre van Dijk, John Zimmerman

Proceedings Volume 6921, 69210L (2008) https://doi.org/10.1117/12.773259

KEYWORDS: Extreme ultraviolet, Tin, Extreme ultraviolet lithography, Semiconducting wafers, Mirrors, Printing, Sensors, Stray light, Cameras, Reticles

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Proceedings Article | 27 March 2007 Paper

Performance of a 1.35NA ArF immersion lithography system for 40-nm applications

Jos de Klerk, Christian Wagner, Richard Droste, Leon Levasier, Louis Jorritsma, Eelco van Setten, Hans Kattouw, Jowan Jacobs, Tilmann Heil

Proceedings Volume 6520, 65201Y (2007) https://doi.org/10.1117/12.712094

KEYWORDS: Semiconducting wafers, Combined lens-mirror systems, Polarization, Immersion lithography, Water, Fiber optic illuminators, Lithography, Control systems, Stray light, Monochromatic aberrations

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Proceedings Article | 15 March 2006 Paper

Enabling the 45nm node by hyper-NA polarized lithography

Wim de Boeij, Geert Swinkels, Nicolas Le Masson, Armand Koolen, Henk van Greevenbroek, Michel Klaassen, Mark van de Kerkhof, Koen van Ingen Schenau, Laurens de Winter, Martijn Wehrens, Steve Hansen, Christian Wagner

Proceedings Volume 6154, 61540B (2006) https://doi.org/10.1117/12.659006

KEYWORDS: Polarization, Birefringence, Reticles, Lithography, Lithographic illumination, Imaging systems, Photomasks, Fiber optic illuminators, Electroluminescence, Scanners

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Proceedings Article | 15 March 2006 Paper

Immersion lithography with an ultrahigh-NA in-line catadioptric lens and a high-transmission flexible polarization illumination system

Hans Jasper, Theo Modderman, Mark van de Kerkhof, Christian Wagner, Jan Mulkens, Wim de Boeij, Eelco van Setten, Bernhard Kneer

Proceedings Volume 6154, 61541W (2006) https://doi.org/10.1117/12.657558

KEYWORDS: Polarization, Combined lens-mirror systems, Semiconducting wafers, Curtains, Lens design, Lithographic illumination, Fiber optic illuminators, Lithography, Mirrors, Imaging systems

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Proceedings Article | 12 May 2005 Paper

Characterization of ArF immersion process for production

Jeng-Horng Chen, Li-Jui Chen, Tun-Ying Fang, Tzung-Chi Fu, Lin-Hung Shiu, Yao-Te Huang, Norman Chen, Da-Chun Oweyang, Ming-Che Wu, Shih-Che Wang, John Lin, Chun-Kuang Chen, Wei-Ming Chen, Tsai-Sheng Gau, Burn Lin, Richard Moerman, Wendy Gehoel-van Ansem, Eddy van der Heijden, Fred de Jong, Dorothe Oorschot, Herman Boom, Martin Hoogendorp, Christian Wagner, Bert Koek

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.602025

KEYWORDS: Semiconducting wafers, Scanners, Immersion lithography, Particles, Lithography, Overlay metrology, Prototyping, Microfluidics, Water, Finite element methods

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Proceedings Article | 5 July 2000 Paper

Optical lithography into the millennium: sensitivity to aberrations, vibration, and polarization

Donis Flagello, Jan Mulkens, Christian Wagner

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388983

KEYWORDS: Polarization, Photoresist materials, Modulation, Image resolution, Lithography, Optical lithography, Manufacturing, Monte Carlo methods, Photomasks, Reticles

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Proceedings Article | 5 July 2000 Paper

Advanced technology for extending optical lithography

Christian Wagner, Winfried Kaiser, Jan Mulkens, Donis Flagello

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389046

KEYWORDS: Photomasks, Optical lithography, Polarization, Semiconducting wafers, Silica, Lithography, Laser optics, Standards development, Lens design, Scanners

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Proceedings Article | 30 December 1999 Paper

Challenges and opportunities for 157-nm mask technology

Jan Mulkens, Christian Wagner, Kevin Cummings, Richard George

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373333

KEYWORDS: Photomasks, Reticles, Lithography, Reflectivity, Silica, Absorption, Semiconducting wafers, Reflection, Pellicles, Contamination

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Proceedings Article | 26 July 1999 Paper

ArF step-and-scan exposure system for 0.15-um and 0.13-um technology nodes

Jan Mulkens, Judon Stoeldraijer, Guy Davies, Marcel Dierichs, Barbra Heskamp, Marco Moers, Richard George, Oliver Roempp, Holger Glatzel, Christian Wagner, Ingrid Pollers, Patrick Jaenen

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354362

KEYWORDS: Semiconducting wafers, Reticles, Lithography, Imaging systems, Photomasks, Overlay metrology, Scanning electron microscopy, Photoresist processing, Monochromatic aberrations, Distortion

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Showing 5 of 22 publications

Conference Committee Involvement (1)

Optical Fabrication, Testing, and Metrology

30 September 2003 | St. Etienne, France

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