Ms. Christina Deverich Profile

Christina Deverich

Process Engineer at GlobalFoundries

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Publications (6)

Proceedings Article | 8 November 2005 Paper

Investigation of shipping material and reticle storage environment to dark loss stability of chemically amplified resist

Christina Deverich, Paul Rabidoux, Ken Racette

Proceedings Volume 5992, 59923C (2005) https://doi.org/10.1117/12.632223

KEYWORDS: FT-IR spectroscopy, Nitrogen, Chemically amplified resists, Contamination, Chemical analysis, Compact discs, Chlorine, Photomasks, Reticles, Control systems

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Proceedings Article | 17 December 2003 Paper

Resist heating effect on e-beam mask writing at 75 kV and 60 A/cm²

Zdenek Benes, Christina Deverich, Chester Huang, Mark Lawliss

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.517513

KEYWORDS: Critical dimension metrology, Chemically amplified resists, Cadmium, Scanning electron microscopy, Electron beam lithography, Mask making, Photomasks, Electron beams, Beam shaping, Quartz

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Proceedings Article | 28 August 2003 Paper

Current developments of a high-performance CA resist for mask-making application

Wu-Song Huang, Wei He, Wenjie Li, Wayne Moreau, Robert Lang, David Medeiros, Karen Petrillo, Arpan Mahorowala, Marie Angelopoulos, Christina Deverich, Chester Huang, Paul Rabidoux

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504049

KEYWORDS: Etching, Photomasks, Polymers, Silicon, Chromium, Semiconducting wafers, Mask making, Resistance, Lithography, Scanning electron microscopy

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The mask fabrication industry is slowly migrating to chemically amplified (CA) resists to take the advantages of their high contrast, resolution, and sensitivity. During this migration process, the industry has encountered several problems associated with CA resists such as baking homogeneity of thick mask plates on hot plates, footing on Cr masks, and storage stability of mask blanks. In addressing these issues, we have adopted a low Ea CA resist platform to overcome the bake latitude issue. The resist formulation has been reformulated to reduce the footing and a new package method has been introduced to extend the storage of the blanks. In addition, we will also discuss our studies on two major areas, such as sensitivity and etch resistance, which we think is extremely important for E-beam resists in the future. The mask industry started with 248nm DUV CA resist systems and then found out that there was a need for even higher sensitivity resist systems to address the throughput issue. In our early study, we have observed that by simply increasing photoacid generator loading in the resist formulation we were able to increase the sensitivity, but there was a significant reduction in the dose latitude. After studying the dissolution and inhibition properties of different PAGs, we have been able to optimize PAG and base loading in combination with proper choice of PAGs to achieve high sensitivity and large dose latitude. The new resist formulation exhibits a large dose latitude of 38% for 100 nm l/s images with high sensitivity of 4.4μC/cm² at 100 kV. Due to the electron scattering effect and the image collapse issues with thicker resists, thinner imaging layer is desirable. Sufficient etch selectivity is needed to compensate the insufficient resist thickness. Therefore, there is a need to develop a high Cl₂/O₂ RIE (used in Cr etch process) etch resistant resist system for mask making. We have reported earlier that a resist formulation based on blending KRS-XE with SSQ polymer has resolved 50nm l/s resist images with etch rate 20% better than conventional novolak I-line resist systems. Since then, we have investigated a few new SSQ polymers and found some lithographic improvement in this new blending systems due to better compatibility of the SSQ polymer to the KRS-XE.

Proceedings Article | 27 December 2002 Paper

Enhancement of KRS-XE for 50-keV advanced mask-making applications

Karen Petrillo, David Medeiros, Jim Bucchignano, Marie Angelopoulos, Dario Goldfarb, Wu-Song Huang, Wayne Moreau, Robert Lang, Chester Huang, Christina Deverich, Thomas Cardinali

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.468085

KEYWORDS: Photomasks, Mask making, Photoresist materials, Chemically amplified resists, Semiconducting wafers, Polymers, Scanning electron microscopy, Electron beam lithography, Lithography, Oxides

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Proceedings Article | 1 August 2002 Paper

Early mask results of KRS-XE and current progress in improving sensitivity and etch resistance

Christina Deverich, Andrew Watts, Paul Rabidoux, Thomas Cardinali, William Aaskov, Peter Levin, Wu-Song Huang, Wayne Moreau, Marie Angelopoulos, Karen Petrillo, David Madeiros

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476946

KEYWORDS: Photomasks, Etching, Opacity, Critical dimension metrology, Resistance, Chemically amplified resists, Packaging, Lithography, Temperature metrology, Mask making

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Proceedings Article | 11 March 2002 Paper

Use of KRS-XE positive chemically amplified resist for optical mask manufacturing

Brian Ashe, Christina Deverich, Paul Rabidoux, Barbara Peck, Karen Petrillo, Marie Angelopoulos, Wu-Song Huang, Wayne Moreau, David Medeiros

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458348

KEYWORDS: Etching, Chemically amplified resists, Mask making, Photoresist processing, Optics manufacturing, Photomasks, Critical dimension metrology, Resistance, Reactive ion etching, Dry etching

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Showing 5 of 6 publications

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