Dr. Christophe Kopp Profile

Dr. Christophe Kopp

Project Manager at CEA-LETI

SPIE Involvement:

Author

Publications (26)

Proceedings Article | 18 April 2021 Presentation + Paper

Presentation + Paper

High-speed germanium p-i-n avalanche photodetectors on silicon

Daniel Benedikovic, Léopold Virot, Guy Aubin, Jean-Michel Hartmann, Farah Amar, Bertrand Szelag, Xavier Le Roux, Carlos Alonso-Ramos, Paul Crozat, Eric Cassan, Frédéric Boeuf, Jean-Marc Fédéli, Christophe Kopp, Laurent Vivien

Proceedings Volume 11775, 117750G (2021) https://doi.org/10.1117/12.2588981

KEYWORDS: Silicon, Photodetectors, Germanium, Avalanche photodetectors, Nanophotonics, Waveguides, Semiconductors, Heterojunctions, Signal detection, Optoelectronics

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Integrated silicon nanophotonics has progressed a lot over past decades with great promises for many surging applications in optoelectronics, information and communication technologies, sensing or health monitoring. Enabling low-cost, dense integration, and compatibility with modern semiconductor nanofabrication processes, silicon nanophotonics deliver compact and high-performance devices on single chips. A variety of nanophotonic functionalities, both passive and active, are nowadays available on semiconductor substrates, leveraging the maturity of open-access silicon foundries and epitaxial germanium integration. It encompasses essential functions such as light generation and amplification, fast electro-optical modulation, and reliable conversion of optical into electrical signals. Germaniumbased optical photodetectors are main building blocks within the library of integrated silicon nanophotonics, with performances that are nowadays on par with their III-V-based counterparts. Germanium photodetectors integrated at the end of waveguides are attractive for next-generation on-chip interconnections, because of their compactness, bandwidth and speed, energy consumption and cost. In this work, we present our latest advances on silicon-germanium p-i-n waveguide-integrated photodetectors based on lateral silicon-germanium-silicon heterojunctions. Our hetero-structured photodetectors were fabricated on top of 200-mm silicon-on-insulator substrates using industrial-scale fabrication processes compatible with complementary metal-oxide-semiconductor technology. Silicon-germanium p-i-n photodetectors operated under low bias voltages exhibited low dark-currents (~100 nA), cut-off frequencies beyond 50 GHz, and photo-responsivities of about 1.2 A/W. Photodetector sensitivities of -14 dBm and -11 dBm were achieved for communication data rates of 10 Gbps and 25 Gbps, respectively. P-i-n photodetectors with lateral heterojunction operated in an avalanche regime offered an additional degree of freedom to improve device performances. High-speed and low-noise characteristics were obtained in our p-i-n photodetectors upon avalanche operation, with a gain-bandwidth product of 210 GHz and a low carrier impact ionization ratio of about 0.25. The measured sensitivity of avalancheoperated devices was -11 dBm for 40 Gbps signal detection. As demonstrated in the reported achievements, heterostructured p-i-n photodetectors are thus suitable communication devices in future intra-data center links or high-speed optical interconnects.

Proceedings Article | 25 February 2020 Paper

Paper

28 Gbps silicon-germanium hetero-structure avalanche photodetectors

Daniel Benedikovic, Léopold Virot, Guy Aubin, Jean-Michel Hartmann, Farah Amar, Bertrand Szelag, Xavier Le Roux, Carlos Alonso-Ramos, Paul Crozat, Eric Cassan, Delphine Marris-Morini, Charles Baudot, Frédéric Boeuf, Jean-Marc Fédéli, Christophe Kopp, Laurent Vivien

Proceedings Volume 11283, 112830Y (2020) https://doi.org/10.1117/12.2543499

KEYWORDS: Photodetectors, Silicon, Germanium, Waveguides, Avalanche photodetectors, Signal detection, Eye, Integrated optics, Quantum efficiency, Diodes

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Owing to its low-cost, high-yield, and dense integration ability, silicon nanophotonics is a good candidate to tackle the needs of exponentially growing communications in data centers, high-performance computers, and cloud services. Moreover, a number of nanophotonic functions are now available on a single chip, as they take advantages of silicon-foundry process maturity and epitaxial germanium integration. Optical photodetectors are key building blocks in the library of group-IV components and their performances are quite successful nowadays. In particular, silicon-germanium waveguide-integrated photodetectors are fixing new standards for next generation of on-chip interconnects in terms of compactness, speed, power consumption and cost. Indeed, conventional pin photodetectors yield good responsivities (~1 A/W in a 1.5 μm wavelength range), high bandwidths (~50 GHz), and dark currents well below 1 μA. Despite recent advances, their optical power sensitivities remain rather modest and speeds are limited to 25 Gbps only, however. Compensating for the insufficient photodetector sensitivity requires higher transmitter output powers and therefore higher energy consumption. Additional energy savings can be obtained by eliminating receiver electronics. Alternatively, an appealing approach is to exploit device structures with an internal multiplication gain to lower even more the power budget and improve energy efficiency of chip-based optical links. In this work, we report on waveguide-integrated photodetectors with lateral silicon-germanium-silicon heterojunctions. Here, we present avalanche photodetectors fabricated on 200-mm silicon-on-insulator wafers using complementary metal-oxide-semiconductor-compatible processes. Devices operate in the low-gain-regime to facilitate high-speed link operations at 1.55 μm wavelengths. An error-free signal detection was achieved at 28 Gbps, with power sensitivity of -11 dBm for 10^-9 bit-error-rate, which is a relevant link rate for emerging chip-scale optical interconnects.

Proceedings Article | 4 March 2019 Presentation + Paper

Presentation + Paper

High-performance waveguide photodetectors based on lateral Si/Ge/Si heterojunction

Daniel Benedikovic, Leopold Virot, Guy Aubin, Farah Amar, Bertrand Szelag, Bayram Karakus, Jean-Michel Hartmann, Carlos Alonso-Ramos, Xavier Le Roux, Paul Crozat, Delphine Marris-Morini, Eric Cassan, Charles Baudot, Frederic Boeuf, Jean-Marc Fedeli, Christophe Kopp, Laurent Vivien

Proceedings Volume 10921, 109210O (2019) https://doi.org/10.1117/12.2508726

KEYWORDS: Photodetectors, Germanium, Silicon, Waveguides, Heterojunctions, Nanophotonics, Eye, Signal detection, Optical communications, Ion implantation

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Proceedings Article | 23 May 2018 Presentation

Presentation

Automatic alignment of photonic components of massive optical switch to ITU channels (Conference Presentation)

Astghik Chalyan, Stefano Tondini, Giorgio Fontana, Lorenzo Pavesi, Nikola Zecevic, Michael Hofbauer, Bernhard Goll, Horst Zimmermann, Francesco Testa, Stefano Stracca, Alberto Bianchi, Costanza Manganelli, Philippe Velha, Paolo Pintus, Claudio Oton, Christophe Kopp, Laetitia Adelmini, Olivier Lemonnier, Gabriel Pares, Guido Chiaretti, Aina Serrano, Jose Ángel Ayucar, Giovani Battista Preve, Jong Moo Lee, Claudio Castellan

Proceedings Volume 10686, 1068613 (2018) https://doi.org/10.1117/12.2306433

KEYWORDS: Optical switching, Switching, Automatic alignment, Integrated optics, Photonic integrated circuits, Channel projecting optics, Germanium, Optical components, Control systems, Photodiodes

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We demonstrate the automatic thermal alignment of photonic components within an integrated optical switch. The WDM optical switch involves switching elements, wavelength de-multiplexers, interleavers and monitors each one needing independent control. Our system manages rerouting of channels coming from four different directions, each carrying 12, 200GHz spaced, wavelengths into eight add/drop ports. The integrated device includes 12 interleavers, which can act either as optical de-interleavers to split the optical signal into odd and even channels or as optical interleavers that recombine the odd and even channels coming from the switching matrix. Integrated Ge photodiodes are placed in key positions within the photonic integrated circuit (PIC) are serve for monitoring. An electronic integrated circuit (EIC) drives the photonic elements by means of dedicated heating circuits (824 on-board heater control cells, 768 for the switching elements and 56 for the interleavers and the mux/de-mux) and reads out the Ge diodes photocurrent through TIAs. We applied a stochastic optimization algorithm to align the spectral response of the interleavers to the ITU grid. We exploit the thermo-optic effect to shift the interleavers pass-band in a desired spectral position. The interleavers are provided with dedicated metallic heaters that can be operated in order to tune the interleaver response, which is typically misaligned due to fabrication inaccuracies. The experimental setup is made of a tunable laser coupled with one input port of optical switch. The optimization algorithm is implemented via a software to drive the EIC till finding the best heating configuration (on the two branches of the interleaver) on the basis of the monitor diode-feedback. This way, the even and odd wavelengths input in the interleaver are directed toward the wanted lines within the switching matrix. Our method has been used for aligning the micro-ring based switching elements in the PIC as well. In that case, the integrated Ge photodiodes have been used to align the photonic components in the PIC in order to enable different pathways for the routing or the broadcasting operation of the optical switch. With no bias applied to the heaters of the switching elements, the optical signal is expected to be maximum at the through port. When the micro-ring heaters are biased, the feedback controller finds the best set of heating values that minimize the optical power at the through port of the switching node. This way, the optical signal is coupled in the drop port and the node is enabled for switching. The algorithm, implemented in LabVIEW, converges over multiple instances and it is robust against stagnation. This work aims at enabling the automatic reconfiguration/restoration of the whole WDW optical switch.

Proceedings Article | 21 May 2018 Paper

Paper

Low crosstalk silicon arrayed waveguide gratings for on-chip optical multiplexing

Claudio Castellan, Stefano Tondini, Mattia Mancinelli, Christophe Kopp, Lorenzo Pavesi

Proceedings Volume 10686, 106860V (2018) https://doi.org/10.1117/12.2306120

KEYWORDS: Waveguides, Stars, Silicon, Optical multiplexing, Smoothing, Integrated optics, Signal attenuation, Switches, Multiplexing, Wavelength division multiplexing

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Proceedings Article | 16 June 2017 Presentation

Presentation

Robust integration schemes for junction-based modulators in a 200mm CMOS compatible silicon photonic platform (Conference Presentation)

Bertrand Szelag, Alexis Abraham, Stéphane Brision, Paul Gindre, Benjamin Blampey, André Myko, Segolene Olivier, Christophe Kopp

Proceedings Volume 10249, 1024907 (2017) https://doi.org/10.1117/12.2265757

KEYWORDS: Silicon photonics, Telecommunications, Photonic devices, CMOS devices, Microelectronics, Diffusion, Modulators, Electro optics, Lithography, Computing systems

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Silicon photonic is becoming a reality for next generation communication system addressing the increasing needs of HPC (High Performance Computing) systems and datacenters. CMOS compatible photonic platforms are developed in many foundries integrating passive and active devices. The use of existing and qualified microelectronics process guarantees cost efficient and mature photonic technologies. Meanwhile, photonic devices have their own fabrication constraints, not similar to those of cmos devices, which can affect their performances.

In this paper, we are addressing the integration of PN junction Mach Zehnder modulator in a 200mm CMOS compatible photonic platform. Implantation based device characteristics are impacted by many process variations among which screening layer thickness, dopant diffusion, implantation mask overlay. CMOS devices are generally quite robust with respect to these processes thanks to dedicated design rules. For photonic devices, the situation is different since, most of the time, doped areas must be carefully located within waveguides and CMOS solutions like self-alignment to the gate cannot be applied. In this work, we present different robust integration solutions for junction-based modulators. A simulation setup has been built in order to optimize of the process conditions. It consist in a Mathlab interface coupling process and device electro-optic simulators in order to run many iterations. Illustrations of modulator characteristic variations with process parameters are done using this simulation setup. Parameters under study are, for instance, X and Y direction lithography shifts, screening oxide and slab thicknesses. A robust process and design approach leading to a pn junction Mach Zehnder modulator insensitive to lithography misalignment is then proposed. Simulation results are compared with experimental datas. Indeed, various modulators have been fabricated with different process conditions and integration schemes. Extensive electro-optic characterization of these components will be presented.

Proceedings Article | 20 February 2017 Presentation + Paper

Presentation + Paper

Integration and modeling of photonic devices suitable for high performance computing and data center applications

B. Szelag, M. Seyedi, A. Myko, B. Blampey, A. Descos, Chin-Hui Chen, S. Brision, F. Gays, M. Fiorentino, Ray Beausoleil, C. Kopp

Proceedings Volume 10108, 1010819 (2017) https://doi.org/10.1117/12.2249851

KEYWORDS: Modulators, Silicon photonics, Silicon, Photodetectors, Electronic design automation, Microrings, Data modeling, Optical lithography, Waveguides, Signal attenuation, Photodiodes, Oxides

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Proceedings Article | 16 February 2017 Presentation + Paper

Presentation + Paper

Hybrid III-V/silicon photonic integrated circuits for high bitrates telecommunication applications

David Carrara, Alexandre Shen, Xavier Pommarede, Guillaume Levaufre, Nils Girard, Dalila Make, Geneviève Glastre, Jean Decobert, François Lelarge, Romain Brenot, Ségolène Olivier, Christophe Jany, Stéphane Malhouitre, Benoit Charbonnier, Christophe Kopp, Guang-Hua Duan

Proceedings Volume 10106, 101060G (2017) https://doi.org/10.1117/12.2250129

KEYWORDS: Photonic integrated circuits, Tunable lasers, Silicon, Transmitters, Telecommunications, Modulators, Networks, Modulation, Silicon photonics, Waveguides, Semiconducting wafers, Semiconductor lasers, Wafer bonding

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Proceedings Article | 13 May 2016 Presentation + Paper

Presentation + Paper

DAPHNE silicon photonics technological platform for research and development on WDM applications

Charles Baudot, Antonio Fincato, Daivid Fowler, Diego Perez-Galacho, Aurélie Souhaité, Sonia Messaoudène, Romuald Blanc, Claire Richard, Jonathan Planchot, Come De-Buttet, Bastien Orlando, Fabien Gays, Cécilia Mezzomo, Emilie Bernard, Delphine Marris-Morini, Laurent Vivien, Christophe Kopp, Frédéric Boeuf

Proceedings Volume 9891, 98911D (2016) https://doi.org/10.1117/12.2229035

KEYWORDS: Silicon, Wavelength division multiplexing, Waveguides, Germanium, Silicon photonics, Etching, Optical lithography, Photonic integrated circuits, Computer aided design, Transmission electron microscopy

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Proceedings Article | 13 May 2016 Presentation + Paper

Presentation + Paper

Multiple wavelength silicon photonic 200 mm R+D platform for 25Gb/s and above applications

B. Szelag, B. Blampey, T. Ferrotti, V. Reboud, K. Hassan, S. Malhouitre, G. Grand, D. Fowler, S. Brision, T. Bria, G. Rabillé, P. Brianceau, J. M. Hartmann, V. Hugues, A. Myko, F. Elleboode, F. Gays, J. M. Fédéli, C. Kopp

Proceedings Volume 9891, 98911C (2016) https://doi.org/10.1117/12.2228744

KEYWORDS: Silicon, Waveguides, Etching, Silicon photonics, Optical lithography, Modulators, Semiconducting wafers, Germanium, Brain-machine interfaces, Photomasks

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Proceedings Article | 15 March 2016 Paper

Paper

Realization of back-side heterogeneous hybrid III-V/Si DBR lasers for silicon photonics

Jocelyn Durel, Thomas Ferrotti, Alain Chantre, Sébastien Cremer, Julie Harduin, Stéphane Bernabé, Christophe Kopp, Frédéric Boeuf, Badhise Ben Bakir, Jean-Emmanuel Broquin

Proceedings Volume 9750, 97500O (2016) https://doi.org/10.1117/12.2212309

KEYWORDS: Silicon photonics, Silicon, Waveguides, Semiconductor lasers, Hybrid silicon lasers, Mirrors, Metals, Silica, Etching, Oxides

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Proceedings Article | 18 March 2015 Paper

Paper

Progresses in 300mm DUV photolithography for the development of advanced silicon photonic devices

Charles Baudot, Bertrand Szelag, Nacima Allouti, Corinne Comboroure, Sébastien Bérard-Bergery, Christian Vizioz, Sébastien Barnola, Fabien Gays, Denis Mariolle, Thomas Ferrotti, Aurélie Souhaité, Stéphane Brision, Christophe Kopp, Sylvie Menezo

Proceedings Volume 9426, 94260D (2015) https://doi.org/10.1117/12.2085800

KEYWORDS: Waveguides, Optical lithography, Silicon photonics, Silicon, Etching, Lithography, Photoresist materials, Wave propagation, Deep ultraviolet, 193nm lithography

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Proceedings Article | 13 November 2014 Paper

Paper

Hybrid III-V/silicon SOA for photonic integrated circuits

P. Kaspar, R. Brenot, A. Le Liepvre, A. Accard, D. Make, G. Levaufre, N. Girard, F. Lelarge, G.-H. Duan, S. Olivier, Christophe Jany, C. Kopp, S. Menezo

Proceedings Volume 9277, 927708 (2014) https://doi.org/10.1117/12.2074617

KEYWORDS: Photonic integrated circuits, Silicon, Waveguides, Optical amplifiers, Modulation, Fiber amplifiers, Optical networks, Silicon photonics, Laser applications, Modulators

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Proceedings Article | 1 May 2014 Paper

Paper

Towards a low noise class-A hybrid III-V/silicon laser

Nils Girard, Ghaya Baili, Pascale Nouchi, Daniel Dolfi, Alban Le Liepvre, Alain Accard, Peter Kaspar, Dalila Make, Philippe Charbonnier, Franck Mallecot, Mickael Faugeron, Frederic Van Dijk, Guang-Hua Duan, Ségolène Olivier, Stephan Malhouitre, Christophe Kopp

Proceedings Volume 9133, 91331B (2014) https://doi.org/10.1117/12.2052295

KEYWORDS: Silicon, Semiconductor lasers, Optical filters, Laser resonators, Waveguides, Hybrid silicon lasers, Laser development, Laser optics, Picosecond phenomena, Resonators

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Proceedings Article | 1 May 2014 Paper

Paper

Hybrid III-V/silicon lasers

P. Kaspar, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, G. Levaufre, N. Girard, F. Lelarge, A. Shen, P. Charbonnier, F. Mallecot, G.-H. Duan, J. Gentner, J.-M. Fedeli, S. Olivier, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Malhouitre, C. Kopp, S. Menezo

Proceedings Volume 9133, 913302 (2014) https://doi.org/10.1117/12.2052999

KEYWORDS: Waveguides, Silicon, Semiconducting wafers, Tunable lasers, Silicon photonics, Photonic integrated circuits, Wafer bonding, Semiconductor lasers, Laser resonators, Laser applications

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Proceedings Article | 9 May 2012 Paper

Paper

40Gbit/s germanium waveguide photodetector on silicon

Léopold Virot, Laurent Vivien, Andreas Polzer, Delphine Marris-Morini, Johann Osmond, Jean Michel Hartmann, Paul Crozat, Eric Cassan, Charles Baudot, Christophe Kopp, Frédéric Boeuf, Horst Zimmermann, Jean Marc Fédéli

Proceedings Volume 8431, 84310A (2012) https://doi.org/10.1117/12.923854

KEYWORDS: Germanium, Silicon, Waveguides, Photodiodes, Photodetectors, Eye, Silica, PIN photodiodes, Epitaxy, Semiconducting wafers

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Proceedings Article | 16 February 2012 Paper

Paper

Thin varifocal liquid lenses actuated below 10V for mobile phone cameras

Arnaud Pouydebasque, Sébastien Bolis, Fabrice Jacquet, Claudine Bridoux, Laëtitia Zavattoni, Sofiane Soulimane, Stéphane Moreau, Damien Saint-Patrice, Christophe Bouvier, Christophe Kopp, Stéphane Fanget

Proceedings Volume 8252, 82520P (2012) https://doi.org/10.1117/12.908057

KEYWORDS: Electrodes, Lenses, Liquids, Semiconducting wafers, Cameras, Glasses, Liquid lenses, Wavefronts, Polymers, Wavefront sensors

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Proceedings Article | 17 February 2010 Paper

Paper

Silicon photonics: ready to wafer-bonding fibre grating coupler

Christophe Kopp, Tiphaine Dupont, Jean-Marc Fédéli, Régis Orobtchouk

Proceedings Volume 7606, 760618 (2010) https://doi.org/10.1117/12.839679

KEYWORDS: Mirrors, Fiber couplers, Silicon, Semiconducting wafers, Silica, Wafer bonding, Structured optical fibers, Integrated optics, Reflectivity, Silicon photonics

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Proceedings Article | 14 May 2008 Paper

Paper

Very compact FTTH Diplexer design using advanced wafer level fabrication methods

Christophe Kopp, Philippe Grosse, Philippe Gilet, Nicolas Olivier, Alexei Chelnokov, Laurent Fulbert, Stéphane Bernabé, Cyrille Rossat, Régis Hamelin, Ivar Hamberg, Lennart Lundqvist, Nicolae Chitica, Matthias Hammar, Jesper Berggren, Stéphane Junique, Qin Wang, Susanne Almqvist, Christian Sillans

Proceedings Volume 6992, 699203 (2008) https://doi.org/10.1117/12.779746

KEYWORDS: Vertical cavity surface emitting lasers, Photodiodes, Signal detection, Fiber to the x, Mirrors, Optics manufacturing, Receivers, Packaging, Reflectivity, Semiconducting wafers

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Proceedings Article | 8 February 2008 Paper

Paper

Merging parallel optics packaging and surface mount technologies

Christophe Kopp, Marion Volpert, Julien Routin, Stéphane Bernabé, Cyrille Rossat, Myriam Tournaire, Régis Hamelin

Proceedings Volume 6899, 68990Y (2008) https://doi.org/10.1117/12.761609

KEYWORDS: Vertical cavity surface emitting lasers, Packaging, Transceivers, Ceramics, Connectors, Optical alignment, Fiber couplers, Helium, Optics manufacturing, Glasses

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Proceedings Article | 14 February 2007 Paper

Paper

Silicon photonics packaging: characterization of a waveguide grating coupler and modeling of the fiber coupling ratio

Christophe Kopp, Karen Gilbert, Philippe Grosse, Jean-Marc Fedeli

Proceedings Volume 6478, 64780N (2007) https://doi.org/10.1117/12.698915

KEYWORDS: Polarization, Fiber couplers, Structured optical fibers, Waveguides, Nanophotonics, Silicon, Time multiplexed optical shutter, Packaging, Optical networks, Wafer testing

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Proceedings Article | 8 September 2006 Paper

Paper

Compact parallel optical interface built with optical fiber tips

Christophe Kopp, Karen Gilbert, Stéphane Bernabe, Blandine Albert

Proceedings Volume 6343, 634341 (2006) https://doi.org/10.1117/12.708261

KEYWORDS: Silicon, Optical fibers, Vertical cavity surface emitting lasers, Interfaces, Fiber couplers, Optics manufacturing, Semiconducting wafers, Transmitters, Waveguides, Connectors

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Proceedings Article | 3 June 2005 Paper

Paper

Low temperature epoxy-free and flux-less bonding process applied to solid-state microchip laser

Christophe Kopp, Karen Gilbert

Proceedings Volume 5825, (2005) https://doi.org/10.1117/12.594551

KEYWORDS: Indium, Laser bonding, Solid state electronics, Semiconductor lasers, Solid state lasers, Gold, Silicon, Epoxies, Adhesives, Glasses

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Proceedings Article | 8 September 2004 Paper

Paper

PLATIMO: versatile assembling facilities to bring concepts to prototypes and automated production

Christophe Kopp, Laurent Fulbert, Karen Gilbert

Proceedings Volume 5454, (2004) https://doi.org/10.1117/12.553046

KEYWORDS: Semiconductor lasers, Optical alignment, Prototyping, Semiconducting wafers, Glasses, Nd:YAG lasers, Assembly equipment, Transmitters, Integrated optics, Optical fibers

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Proceedings Article | 26 February 2004 Paper

Paper

PLATIMO: versatile assembling facilities to bring concepts to prototypes and automated production

Christophe Kopp, Laurent Fulbert, Karen Gilbert

Proceedings Volume 5252, (2004) https://doi.org/10.1117/12.513330

KEYWORDS: Semiconductor lasers, Optical alignment, Semiconducting wafers, Glasses, Prototyping, Nd:YAG lasers, Assembly equipment, Mirrors, Active optics, Gradient-index optics

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Proceedings Article | 1 June 1999 Paper

Paper

New diffractive continuous phase relief element optimization method: an application to a flat top generator

Christophe Kopp, Bernard Kress, Patrick Meyrueis

Proceedings Volume 3633, (1999) https://doi.org/10.1117/12.349320

KEYWORDS: Manufacturing, Chemical elements, Optimization (mathematics), Diamond, Optical lithography, Laser ablation, Excimer lasers, Reactive ion etching, Diffraction, Far-field diffraction

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Showing 5 of 26 publications

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