Mr. Chun-Hung Ko Profile

Chun-Hung Ko

Engineer at Industrial Technology Research Institute

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Publications (5)

Proceedings Article | 24 March 2006 Paper

Influence of semiconductor manufacturing process variation on device parameter measurement for angular scatterometry

Shih-Chun Wang, Yi-Sha Ku, Deh-Ming Shyu, Chun-Hung Ko, Nigel Smith

Proceedings Volume 6152, 61521J (2006) https://doi.org/10.1117/12.655995

KEYWORDS: Critical dimension metrology, Scatterometry, Refractive index, Scatter measurement, Optical properties, Measurement devices, Reflectivity, Semiconductor manufacturing, Process control, Metrology

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The influence of semiconductor manufacturing process variation on device parameter measurements for angular scatterometry was studied. Process variations, e.g, temperature and pressure variation of poly deposition, are considered to affect the optical properties of the deposition layer, and hence cause inaccurate model-based scatterometry measurements. This study investigates measurement error of device parameters if the optical properties change but the model stays for the same in angular scatterometry. A series of diffracted signatures was generated whose optical properties change slightly but keep the same structure. This work measured n (refractive index) and k (extinction index) of materials on wafer from the nominal process condition. Then, n and k are used to create a comparison library. The comparison library fixes all parameters other than varying CD (critical dimension) parameter. When poly layer n changes, the scattering signatures also change. The inaccuracy of CD measurement could be evaluated by comparing varying signatures due to optical properties change to the nominal process condition. An optimal structure design and feature region selection algorithm was developed to reduce errors introduced by these process variations to CD measurement. For angular scatterometry, the reflectance at some scan angles performs lower sensitivity to the optical parameters variation than the reflectance at other scan angles. By determining which scan angles contain less sensitivity and further optimize target design within the process variation range, the influence of process variation on device parameter measurement and the number of measurements used in the inversion process can be reduced. By using 65nm and 45nm as design rules, optimized grating structure with most sensitivity to CD measurement and the least influence on poly refractive index variation were obtained. The optimized grating structures are suitable for inline semiconductor process control of CD measurement for scatterometry.

Proceedings Article | 24 March 2006 Paper

Correlation of scatterometry sensitivities to variation in device parameters

Chun-Hung Ko, Yi-sha Ku, Nigel Smith

Proceedings Volume 6152, 615220 (2006) https://doi.org/10.1117/12.656147

KEYWORDS: Critical dimension metrology, Neural networks, Evolutionary algorithms, Scatterometry, Detection and tracking algorithms, Reflectivity, Target detection, Model-based design, Instrument modeling, Scatter measurement

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Proceedings Article | 15 September 2005 Paper

Method of characteristic signatures matching through discrepancy-enhanced library generation process

Shih-Chun Wang, Yi-Sha Ku, Chun-Hung Ko, Nigel Smith

Proceedings Volume 5908, 59081D (2005) https://doi.org/10.1117/12.616383

KEYWORDS: Light scattering, Scatterometry, Inverse optics, Diffraction, Metrology, Scattering, Critical dimension metrology, Diffraction gratings, Overlay metrology, Optical testing

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Proceedings Article | 10 May 2005 Paper

Comparisons of overlay measurement using conventional bright-field microscope and angular scatterometer

Chun-Hung Ko, Yi-sha Ku, Nigel Smith, Deh-Ming Shyu, Shih-Chun Wang, Sheng-Hua Lu

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.599306

KEYWORDS: Overlay metrology, Microscopes, Reflectance spectroscopy, Reflectivity, Scatterometry, Silicon, Metrology, Spectroscopy, Diffraction gratings, Light

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Proceedings Article | 10 May 2005 Paper

Performance study of CD mark size for angular scatterometry

Yi-sha Ku, Ding-Sheng Pan, Shih-Chun Wang, C. Tung, Chun-Hung Ko, Sheng-Hua Lu, Nigel Smith

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.599188

KEYWORDS: Scattering, Scatterometry, Critical dimension metrology, Laser scattering, Overlay metrology, Light scattering, Scatter measurement, Optical design, Interference (communication), Semiconducting wafers

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