Mr. Clement T. Anyadiegwu Profile

Clement T. Anyadiegwu

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Author

Publications (11)

Proceedings Article | 27 March 2014 Paper

Development of spin-on-carbon hard mask for advanced node

Takanori Kudo, M. Dalil Rahman, Douglas McKenzie, Clement Anyadiegwu, Sandra Doerrenbaecher, Wolfgang Zahn, Munirathna Padmanaban

Proceedings Volume 9051, 90511X (2014) https://doi.org/10.1117/12.2046293

KEYWORDS: System on a chip, Polymers, Carbon, Etching, Silicon, Photomasks, Plasma etching, Semiconducting wafers, Resistance, Coating

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Proceedings Article | 29 March 2013 Paper

New spin-on metal hardmask materials for lithography processes

Huirong Yao, Salem Mullen, Elizabeth Wolfer, Dalil Rahman, Clement Anyadiegwu, Douglas Mckenzie, Alberto Dioses, Joonyeon Cho, Munirathna Padmanaban

Proceedings Volume 8682, 86820S (2013) https://doi.org/10.1117/12.2011226

KEYWORDS: Etching, Metals, Semiconducting wafers, Photomasks, Silicon, Coating, Oxides, Extreme ultraviolet lithography, Lithography, Photoresist materials

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Proceedings Article | 1 April 2009 Paper

Reworkable spin-on trilayer materials: optimization of rework process and solutions for manufacturability

Ruzhi Zhang, Allen Timko, John Zook, Yayi Wei, Lyudmila Pylneva, Yi Yi, Chenghong Li, Hengpeng Wu, Dalil Rahman, Douglas McKenzie, Clement Anyadiegwu, Ping-Hung Lu, Mark Neisser, Ralph Dammel, Ron Bradbury, Timothy Lee

Proceedings Volume 7273, 72732O (2009) https://doi.org/10.1117/12.814708

KEYWORDS: Semiconducting wafers, Silicon, Coating, Inspection, Manufacturing, Chemistry, Fourier transforms, Defect inspection, Polymers, Photoresist materials

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Trilayer stacks with alternating etch selectivity were developed and extensively investigated for high NA immersion lithography at 32nm node and beyond. The conveyance of pattern transfer function from photoresist to Si-containing bottom anti-reflective coating (Si-BARC) and carbonrich underlayer hard-mask (UL) elegantly solved the small etch budget issue for ultra-thin photoresists in immersion lithography. However, due to the hybrid nature of Si-BARC, many different behaviors were observed in comparison to conventional BARC. Lithographic performance, stability, and reworkability were among the most challenging issues for trilayer scheme. Despite of the rapid improvement in lithographic performance and stability of trilayer materials reported by several papers, the rework and cleaning of trilayer materials by wet chemistry remained a challenging problem for manufacturability. The dual function requirement of reflection control and pattern transfer (i.e. hard-masking) for spin-on Si-BARC mandates hybrid materials. Si-BARC containing both organic moiety and inorganic backbone were extensively studied and demonstrated excellent performance. However, the hybrid nature of Si-BARC necessitates the revisit of different wet chemistries and process adjustment is essential to achieve desirable results. In addition, the similarity in chemical structures between Si-BARC and low-κ dielectrics demands subtle rework differentiation by wet chemistry from a chemistry point of view. In our development, we strived to identify rework solutions for trilayer materials in both front-end-of-line (FEOL) and back-end-of-line (BEOL) applications. Rework solutions including diluted HF, Piranha, and low-κ compatible strippers were extensively investigated. The optimization of solution mixture ratios and processing conditions was systematically studied. Thorough defect inspection after rework was performed to ensure the readiness for manufacturability. Extensive Piranha rework study on stack wafers and monitor wafers were carried out and excellent results are reported.

Proceedings Article | 9 April 2007 Paper

Novel diamantane polymer platform for enhanced etch resistance

Munirathna Padmanaban, Srinivasan Chakrapani, Guanyang Lin, Takanori Kudo, Deepa Parthasarathy, Dalil Rahman, Clement Anyadiegwu, Charito Antonio, Ralph Dammel, Shenggao Liu, Frederick Lam, Anthony Waitz, Masao Yamagchi, Takayuki Maehara

Proceedings Volume 6519, 65190G (2007) https://doi.org/10.1117/12.713111

KEYWORDS: Polymers, Etching, Dry etching, Resistance, Lithography, Photoresist materials, 193nm lithography, Line width roughness, Molecules, Polymerization

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Proceedings Article | 6 April 2007 Paper

Some non-resist component contributions to LER and LWR in 193-nm lithography

Takanori Kudo, Srinivasan Chakrapani, Guanyang Lin, Clement Anyadiegwu, Charito Antonio, Deepa Parthasarathy, Ralph Dammel, Munirathna Padmanaban

Proceedings Volume 6519, 651941 (2007) https://doi.org/10.1117/12.713221

KEYWORDS: Line edge roughness, Nanoimprint lithography, Photomasks, Line width roughness, Fourier transforms, Binary data, Transmittance, Lithography, Polymers, Diffusion

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Proceedings Article | 11 April 2006 Paper

193-nm resist composition using hybrid copolymers of cycloolefin/maleic anhydride (COMA)/methacrylate

M. Dalil Rahman, Srivanisan Chakrapani, Clement Anyadiegwu, Guanyang Lin, Allen Timko, Frank Houlihan, David Rentkiewicz, Takanori Kudo, Douglas McKenzie, Ralph Dammel, Munirathna Padmanaban

Proceedings Volume 6153, 615327 (2006) https://doi.org/10.1117/12.658671

KEYWORDS: Polymers, Lithography, Line edge roughness, Semiconducting wafers, Photoresist processing, Critical dimension metrology, Polymer thin films, Etching, Lithographic illumination, Polymerization

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Proceedings Article | 29 March 2006 Paper

Study of the effect of amine additives on LWR and LER

Francis Houlihan, David Rentkiewicz, Guanyang Lin, Dalil Rahman, Douglas Mackenzie, Allen Timko, Takanori Kudo, Clement Anyadiegwu, Muthiah Thiyagarajan, Simon Chiu, Andrew Romano, Ralph Dammel, Munirathna Padmanaban

Proceedings Volume 6153, 615317 (2006) https://doi.org/10.1117/12.659465

KEYWORDS: Line edge roughness, Line width roughness, Polymers, Semiconducting wafers, Lithography, Transistors, Diffusion, Photoresist processing, Critical dimension metrology, Control systems

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Proceedings Article | 29 March 2006 Paper

Versatility in lithographic performance of advanced 193 nm contact hole resist

Takanori Kudo, Guanyang Lin, Dongkwan Lee, Dalil Rahman, Allen Timko, Douglas Mckenzie, Clement Anyadiegwu, Simon Chiu, Frank Houlihan, David Rentkiewicz, Ralph Dammel, Munirathna Padmanaban, John Biafore

Proceedings Volume 6153, 61532C (2006) https://doi.org/10.1117/12.659439

KEYWORDS: Polymers, Lithography, Semiconducting wafers, Photomasks, Resolution enhancement technologies, Photoresist processing, Electroluminescence, Critical dimension metrology, Scanning electron microscopy, Etching

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Proceedings Article | 14 May 2004 Paper

PEB sensitivity studies of ArF resists: II. Polymer and solvent effects

Chi-Sun Hong, Sang-Ho Lee, Woo-Kyu Kim, Takanori Kudo, Allen Timko, Douglas Mckenzie, Clement Anyadiegwu, Dalil Rahman, Guanyang Lin, Ralph Dammel, Munirathna Padmanaban

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.537931

KEYWORDS: Polymers, Critical dimension metrology, Photoresist processing, Etching, Resistance, Lithography, Semiconducting wafers, Resist chemistry, Line edge roughness, Dry etching

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Proceedings Article | 14 May 2004 Paper

Effect of the rinse solution to avoid 193-nm resist line collapse: a study for modification of resist polymer and process conditions

Seiya Masuda, Masakazu Kobayashi, Woo-Kyu Kim, Clement Anyadiegwu, Munirathna Padmanaban, Ralph Dammel, Keiichi Tanaka, Yoshiaki Yamada

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.537409

KEYWORDS: Polymers, Finite element methods, Capillaries, Photoresist processing, Critical dimension metrology, Manufacturing, Semiconducting wafers, Lead, Temperature metrology, Optical resolution

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Proceedings Article | 12 June 2003 Paper

PEB sensitivity studies of ArF resist

SangHo Lee, Woo-Kyu Kim, Dalil Rahman, Takanori Kudo, Allen Timko, Clement Anyadiegwu, Douglas McKenzie, Takashi Kanda, Ralph Dammel, Munirathna Padmanaban

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485183

KEYWORDS: Lithography, Critical dimension metrology, Line edge roughness, Polymers, Photoresist processing, Semiconducting wafers, Coating, Rutherfordium, Diffusion, Scanning electron microscopy

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Showing 5 of 11 publications

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