Mr. Daisuke Taguchi Profile

Daisuke Taguchi

at FUJIFILM Corp

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Proceedings Article | 13 November 2024 Poster

Study of high-contrast PCAR for lithographic performance improvement on EUV blanks

Kei Yamamoto, Kotaro Takahashi, Kazuki Takeda, Hideo Nagasaki, Daisuke Taguchi, Kazunori Ono, Takahiro Hiromatsu, Taku Hirayama

Proceedings Volume 13216, 1321628 (2024) https://doi.org/10.1117/12.3037191

KEYWORDS: Extreme ultraviolet, Lithography, Stochastic processes, Line width roughness, Electron beam lithography, Polymers, Photoresist materials, Electron beams, Chemically amplified resists

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EB (electron beam) resist is widely used for the EUV (extreme ultraviolet) mask production. Tighter pitch size and smaller pattern features are required on EUV mask for the next generation EUV patterning. One of the most critical issues for EB lithography process is the stochastic issue which is induced by low density of quanta due to high energy of e-beam exposure. Such stochastic can induce the heterogeneity of various reactions in the photoresist. As a result, serious performance degradation is caused in key lithographic areas such as LWR (line width roughness), LCDU (local critical dimension uniformity), and resolution. It’s well known that quanta stochastic can be reduced by high dose condition. Thus, demand of high dose EB resist has been risen for further performance improvement. The previous studies showed the typical positive-tone chemically amplified resist (PCAR) comprising the PHS(polyhydroxystyrene) based polymer improved the lithographic performance up to 200μC/cm2, however, the performance was degraded in the high dose area over 250μC/cm2. These studies also suggested that the performance degradation could be caused by the cross-linking effect and decreasing the acid generation contrast induced by high dose. In this study, several PCAR formulations having the different materials were studied under Point-beam and MBMW (multi-beam mask writer) conditions to investigate the acid generation contrast influence on the lithographic performance. We have developed the new high acid generation PCAR and demonstrated the better LCDU and resolution performance on EUV blanks under the multi-beam condition compared with the typical PCAR.

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