Mr. Daniel C. Baker Profile

Daniel C. Baker

Engineer at Microchip Technology Inc

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Proceedings Article | 12 June 2003 Paper

Contact printing to the 45-nm node using a binary mask and 248-nm lithography

Karen Suhm, Daniel Baker, Brian Hesse, Kevin Clark, Scott Coleman

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485102

KEYWORDS: Printing, Photomasks, Photoresist materials, Binary data, Resolution enhancement technologies, Lithography, Deep ultraviolet, Silicon, Oxides, Silicon films

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Contact size will continue to shrink aggressively for future technology nodes. The high costs and uncertainties associated with 193 nm lithography have made extension of DUV the mainstream approach for the semiconductor industry. Phase shift masks have successfully achieved deep sub-wavelength printing, pushing k₁ well below 0.5, but with accompanying high mask-making costs. We have examined the practical limits of 248 nm lithography for contact printing utilizing cost-effective methods. Using a single binary mask, the IDEAL-Smile resolution enhancement technique (RET), in combination with aggressive photoresist technology and post-develop processing, we have demonstrated contact printing capability suitable for the 45 nm generation. A variety of DUV photoresist chemistries and processing techniques are available for imaging small contacts. We have examined state of the art ESCAP and hybrid-acetal photoresists as well as a silicon-containing bi-layer material for their direct printing capability and post-develop thermal processing properties. A photoresist with the best combination of optical, thermal, and mechanical properties was selected. This photoresist was then used to produce sub-50nm contacts. For the numerical aperture used in this study (0.73) this equates to a k₁ factor near 0.15.

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