Prof. Dan M. Fleetwood Profile

Prof. Dan M. Fleetwood

Professor EECS & Chair at Vanderbilt Univ

SPIE Involvement:

Author

Publications (5)

Proceedings Article | 8 March 2014 Paper

Defects in GaN based transistors

A. Sasikumar, A. Arehart, S. Kaun, J. Chen, E. Zhang, D. Fleetwood, R. Schrimpf, J. Speck, S. Ringel

Proceedings Volume 8986, 89861C (2014) https://doi.org/10.1117/12.2042020

KEYWORDS: Field effect transistors, Gallium nitride, Transistors, Metalorganic chemical vapor deposition, Spectroscopy, Optical spectroscopy, Switching, Thermography, Reliability, Capacitance

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Proceedings Article | 29 May 2013 Paper

Effects of x-ray and gamma-ray irradiation on the optical properties of quantum dots immobilized in porous silicon

Girija Gaur, Dmitry Koktysh, Daniel Fleetwood, Robert Reed, Robert Weller, Sharon Weiss

Proceedings Volume 8725, 87252D (2013) https://doi.org/10.1117/12.2015595

KEYWORDS: Luminescence, X-rays, Electrons, Optical properties, Silicon, Nitrogen, Ultraviolet radiation, Quantum dots, X-ray fluorescence spectroscopy, Gamma radiation

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Proceedings Article | 23 May 2005 Paper

1/f noise in SOI buried oxides and alternative dielectrics to SiO2

Daniel Fleetwood, Hao Xiong, Jonathan Lin

Proceedings Volume 5844, (2005) https://doi.org/10.1117/12.609720

KEYWORDS: Oxides, Transistors, Silicon, Semiconducting wafers, Dielectrics, Aluminum, Measurement devices, Molybdenum, Field effect transistors, Annealing

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Proceedings Article | 12 May 2003 Paper

Low-frequency noise and radiation response of buried oxides in SOI nMOS transistors

Hao Xiong, Daniel Fleetwood, James Schwank

Proceedings Volume 5113, (2003) https://doi.org/10.1117/12.487870

KEYWORDS: Oxides, Semiconducting wafers, Temperature metrology, Transistors, Molybdenum, Radiation effects, Field effect transistors, Silicon, Measurement devices, Diffusion

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