Prof. Dan M. Fleetwood
Professor EECS & Chair at Vanderbilt Univ
SPIE Involvement:
Author
Publications (5)

Proceedings Article | 8 March 2014 Paper
Proc. SPIE. 8986, Gallium Nitride Materials and Devices IX
KEYWORDS: Field effect transistors, Gallium nitride, Transistors, Metalorganic chemical vapor deposition, Spectroscopy, Optical spectroscopy, Switching, Thermography, Reliability, Capacitance

Proceedings Article | 29 May 2013 Paper
Proc. SPIE. 8725, Micro- and Nanotechnology Sensors, Systems, and Applications V
KEYWORDS: Luminescence, X-rays, Electrons, Optical properties, Silicon, Nitrogen, Ultraviolet radiation, Quantum dots, X-ray fluorescence spectroscopy, Gamma radiation

Proceedings Article | 23 May 2005 Paper
Proc. SPIE. 5844, Noise in Devices and Circuits III
KEYWORDS: Oxides, Transistors, Silicon, Semiconducting wafers, Dielectrics, Aluminum, Measurement devices, Molybdenum, Field effect transistors, Annealing

Proceedings Article | 12 May 2003 Paper
Proc. SPIE. 5113, Noise in Devices and Circuits
KEYWORDS: Oxides, Semiconducting wafers, Temperature metrology, Transistors, Molybdenum, Radiation effects, Field effect transistors, Silicon, Measurement devices, Diffusion

Proceedings Article | 9 May 2003 Paper
Proc. SPIE. 5112, Noise as a Tool for Studying Materials
KEYWORDS: Molybdenum, Transistors, Oxides, Silicon, Chemical species, Hydrogen, Annealing, Reliability, Interfaces, Temperature metrology

Proceedings Volume Editor (1)

SPIE Conference Volume | 23 May 2005

Conference Committee Involvement (3)
Noise and Fluctuations in Circuits, Devices, and Materials
21 May 2007 | Florence, Italy
Noise in Devices and Circuits III
24 May 2005 | Austin, Texas, United States
Noise as a Tool for Studying Materials
2 June 2003 | Santa Fe, New Mexico, United States
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