Dr. Daniel Kandel Profile

Dr. Daniel Kandel

Principal Scientist at KLA Israel

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Publications (9)

Proceedings Article | 19 March 2015 Paper

Scanner focus metrology for advanced node scanner monitoring and control

Jimyung Kim, Youngsik Park, Taehwa Jeong, Suhyun Kim, Kwang-Sub Yoon, Byoung-il Choi, Vladimir Levinski, Daniel Kandel, Yoel Feler, Nadav Gutman, Eltsafon Island-Ashwal, Moshe Cooper, DongSub Choi, Eitan Herzel, Tien David, JungWook Kim

Proceedings Volume 9424, 94242E (2015) https://doi.org/10.1117/12.2084671

KEYWORDS: Scanners, Photomasks, Metrology, Finite element methods, Semiconducting wafers, Diffraction, Lithography, Phase shifts, Calibration, Scatterometry

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Proceedings Article | 5 April 2012 Paper

Overlay quality metric

Guy Cohen, Eran Amit, Dana Klein, Daniel Kandel, Vladimir Levinski

Proceedings Volume 8324, 832424 (2012) https://doi.org/10.1117/12.916379

KEYWORDS: Process control, Error analysis, Metrology, Quality measurement, Overlay metrology, Precision measurement, Control systems, Scanners, Inspection, Optical lithography

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Proceedings Article | 5 April 2012 Paper

Overlay accuracy fundamentals

Daniel Kandel, Vladimir Levinski, Noam Sapiens, Guy Cohen, Eran Amit, Dana Klein, Irina Vakshtein

Proceedings Volume 8324, 832417 (2012) https://doi.org/10.1117/12.916369

KEYWORDS: Overlay metrology, Semiconducting wafers, Metrology, Optical filters, Quality measurement, Clouds, Wafer-level optics, Diffraction, Optical simulations, Computer simulations

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Proceedings Article | 10 March 2010 Paper

Simultaneous optimization of dose and focus controls in advanced ArF immersion scanners

Tsuyoshi Toki, Pavel Izikson, Junichi Kosugi, Naruo Sakasai, Keiko Saotome, Kazuaki Suzuki, Daniel Kandel, John Robinson, Yuji Koyanagi

Proceedings Volume 7640, 764016 (2010) https://doi.org/10.1117/12.846413

KEYWORDS: Semiconducting wafers, Control systems, Finite element methods, Critical dimension metrology, Error analysis, Scanners, Neural networks, Scatter measurement, Scatterometry, Data modeling

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Proceedings Article | 23 March 2009 Paper

Overlay metrology for double patterning processes

Philippe Leray, Shaunee Cheng, David Laidler, Daniel Kandel, Mike Adel, Berta Dinu, Marco Polli, Mauro Vasconi, Bartlomiej Salski

Proceedings Volume 7272, 72720G (2009) https://doi.org/10.1117/12.814182

KEYWORDS: Overlay metrology, Double patterning technology, Semiconducting wafers, Diffraction, Scanners, Calibration, Metrology, Diffraction gratings, Spectroscopy, Polarizers

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The double patterning (DPT) process is foreseen by the industry to be the main solution for the 32 nm technology node and even beyond. Meanwhile process compatibility has to be maintained and the performance of overlay metrology has to improve. To achieve this for Image Based Overlay (IBO), usually the optics of overlay tools are improved. It was also demonstrated that these requirements are achievable with a Diffraction Based Overlay (DBO) technique named SCOL^TM [1]. In addition, we believe that overlay measurements with respect to a reference grid are required to achieve the required overlay control [2]. This induces at least a three-fold increase in the number of measurements (2 for double patterned layers to the reference grid and 1 between the double patterned layers). The requirements of process compatibility, enhanced performance and large number of measurements make the choice of overlay metrology for DPT very challenging. In this work we use different flavors of the standard overlay metrology technique (IBO) as well as the new technique (SCOL) to address these three requirements. The compatibility of the corresponding overlay targets with double patterning processes (Litho-Etch-Litho-Etch (LELE); Litho-Freeze-Litho-Etch (LFLE), Spacer defined) is tested. The process impact on different target types is discussed (CD bias LELE, Contrast for LFLE). We compare the standard imaging overlay metrology with non-standard imaging techniques dedicated to double patterning processes (multilayer imaging targets allowing one overlay target instead of three, very small imaging targets). In addition to standard designs already discussed [1], we investigate SCOL target designs specific to double patterning processes. The feedback to the scanner is determined using the different techniques. The final overlay results obtained are compared accordingly. We conclude with the pros and cons of each technique and suggest the optimal metrology strategy for overlay control in double patterning processes.

Proceedings Article | 22 March 2008 Paper

Diffraction based overlay metrology: accuracy and performance on front end stack

Philippe Leray, Shaunee Cheng, Daniel Kandel, Michael Adel, Anat Marchelli, Irina Vakshtein, Mauro Vasconi, Bartlomiej Salski

Proceedings Volume 6922, 69220O (2008) https://doi.org/10.1117/12.772516

KEYWORDS: Overlay metrology, Scatterometry, Semiconducting wafers, Diffraction, Chemical mechanical planarization, Silicon, Etching, Metrology, Scanners, Detection and tracking algorithms

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Proceedings Article | 14 March 2008 Paper

Diffraction order control in overlay metrology: a review of the roadmap options

Mike Adel, Daniel Kandel, Vladimir Levinski, Joel Seligson, Alex Kuniavsky

Proceedings Volume 6922, 692202 (2008) https://doi.org/10.1117/12.773243

KEYWORDS: Scatterometry, Overlay metrology, Metrology, Diffraction, Imaging systems, Detection and tracking algorithms, Spectroscopy, Optical lithography, Sensors, Image processing

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Proceedings Article | 18 June 2007 Paper

Differential signal scatterometry overlay metrology: an accuracy investigation

Daniel Kandel, Mike Adel, Berta Dinu, Boris Golovanevsky, Pavel Izikson, Vladimir Levinski, Irina Vakshtein, Philippe Leray, Mauro Vasconi, Bartlomiej Salski

Proceedings Volume 6616, 66160H (2007) https://doi.org/10.1117/12.725929

KEYWORDS: Overlay metrology, Scatterometry, Semiconducting wafers, Detection and tracking algorithms, Computer simulations, Silicon, Standards development, Electromagnetism, Metrology, Algorithms

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Proceedings Article | 24 March 2006 Paper

Imaging simulations of optimized overlay marks with deep sub-resolution features

Daniel Kandel, Michael Adel, Aviv Frommer, Vladimir Levinski, Alexandra Rapoport, Richard Silver

Proceedings Volume 6152, 61522X (2006) https://doi.org/10.1117/12.656494

KEYWORDS: Overlay metrology, Oxides, Metrology, Silicon, Image analysis, Finite-difference time-domain method, Lithography, Process control, Electromagnetic simulation, Imaging systems

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Showing 5 of 9 publications

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