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As plasma etching is known to reduce line edge roughness on 193nm lithography printed features [2], we investigate in this paper the level of roughness that can be achieved on EUV photoresist exposed at a lower dose through etch process optimization into a typical back end of line film stack. We will study 16nm lines printed at 32 and 34nm pitch. MOX and CAR photoresist performance will be compared. We will review step by step etch chemistry development to reach adequate selectivity and roughness reduction to successfully pattern the target layer.
PSCAR utilizes an area-selective photosensitization mechanism to generate more acid in the exposed areas during a UV exposure. PSCAR is an attempt to break the resolution, line-edge-roughness, and sensitivity trade-off (RLS trade-off) relationships that limit standard chemically amplified resists. The photosensitizer, which is generated in exposed area by a photoacid catalytic reaction, absorbs the UV exposure light selectively and generates additional acid in the exposed area only.
Material development and UV exposure uniformity are the key elements of PSCAR technology for semiconductor mass fabrication. This paper will review the approaches toward improvement of PSCAR resist process robustness. The chemistry’s EUV exposure cycle of learning results from experiments at imec will be discussed.
We present the lithography performance of the MTR1 resist series in two formulations – a high-speed baseline, and a formulation designed to enhance the multi-trigger behaviour. Additionally, we present results for the MTR2 resist series, which has been designed for lower line edge roughness. The high-speed baseline resist (MTR1), showed 18 nm resolution at 20mJ/cm2. The MTR2 resist shows 16nm half pitch lines patterned with a dose of 38mJ/cm2, giving a LER of 3.7 nm. Performance across multiple process conditions are discussed. We performed etch rate measurement and the multi-trigger resist showed etch resistance equivalent or better than standard chemically amplified resist. This could compensate for the lower film thickness required to avoid pattern collapse at pitch 32nm.
To be effective during the lithographic EUV material screening phase for such tight pitches, it is necessary to implement complementary metrology analyses that can provide precise information on the resist roughness and a quick feedback on the quantification of nano-failures (nano-bridges, broken lines, merging or missing contacts) induced by a stochastic EUV patterning regime, the random nature of the light-matter interaction and consequent chemical reactions. Beside the traditional approach to characterize a resist with metrics as exposure latitude (EL%), depth of focus (DoF) and line-edge-roughness (LER) based on CDSEM measurements, we have used the power spectra density (PSD) [4] to get an unbiased value of the resist line roughness (LWR and LER) by using Fractilia metroLERTM commercial software. Further, we have used Stochalis imec software [5] to quantify patterning nano failures providing an early stage assessment on the patterning fidelity of the examined resists.
We present the resist characterization results for 32nm dense line-space pattern on different substrates and for 36nm dense and orthogonal contact hole pitch pattern for different photoresists. Two positive tone chemically amplified (CA) resists have been identified at the exposure dose of 45mJ/cm2 and 33mJ/cm2 for logic (pitch 32nm dense line/space) and memory (pitch 36nm dense contact holes) use cases, respectively.
In this work we have introduced a method to measure the chemical interaction of the secondary electrons with the EUV resist. The method is based on electron gun exposures of low energy electrons (range ~1eV to ~80eV) in the photoresist. The chemical interaction is then measured by Residual Gas Analysis (RGA), which can analyze out of the outgassing which and how much reaction products are generated. In this way a ‘chemical yield’ can be quantified as function of electron energy.
This method has been successfully applied to understand the interaction of secondary electrons on the traditional CAR materials. The understanding was facilitated by testing different compositions of an advanced EUV CAR, where resp. polymer only, polymer+PAG, and polymer+PAG+quencher are tested with the electron gun. It was found that low energy electrons down to ~3-4eV can activate PAG dissociation, which can lead to polymer deprotection. However it was observed too that energy electrons of ~12eV and higher can do direct deprotection even in absence of the PAG. In addition, testing suggests that electrons can generate also other chemical changes on the polymer chain that could lead to cross-linking.
We observed a first regime where both CD and LWR quickly decrease during the first 30s of post exposure bake (PEB). This can be related to the deprotection reaction taking place in the exposed part of the resist. After 60s the decrease in CD and LWR slows down significantly, likely related to a regime of acid diffusion from exposed to unexposed region, and acid-quencher neutralization at the interface of these two regions.
We tested two resists with different protecting group and the one having lower activation energy shows a faster CD change in the second regime, resulting in a worsening of LWR for longer PEB time. On the contrary, a resist with a high quencher loading shows reduced net diffusion of acid towards the unexposed region and controls the resist edge profile. In other words longer PEB does not degrade LWR, but as it reduces the line CD, sensitivity is impacted. With an appropriate ratio selection of quencher to PAG, an EUV dose reduction of up to 12% can be achieved with a change from a standard 60 second to a 240 second PEB time, while keeping LWR and resolution constant and therefore pushing the RLS performances.
Finally, we confirmed that the observations on positive tone development (PTD) resist could be applied to negative tone development (NTD) resist: with a high quencher NTD resist we observed a dose reduction of 8% for longer PEB time, keeping LWR and resolution constant.