Dr. David P. Mancini Profile

Dr. David P. Mancini

Process Engineer at Motorola Solutions Inc

SPIE Involvement:

Author

Publications (21)

Proceedings Article | 6 December 2004 Paper

Paper

Inspection and repair issues for Step and Flash Imprint Lithography templates

David Mancini, Kirk Bertsche, Donald Pettibone, Kevin Nordquist, Roy White, Douglas Resnick, Jeffrey Csuy, Harald Hess, William Dauksher, David Lee, David Adler

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569846

KEYWORDS: Inspection, Scanning electron microscopy, Photomasks, Semiconducting wafers, Oxides, Lithography, Etching, Deep ultraviolet, Quartz, Atomic force microscopy

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Step and Flash Imprint Lithography (S-FIL) 1X templates must eventually achieve and maintain the very low defect counts commensurate to current production masks. This requires typically fewer than ten or even no defects over the entire field and to minimize template fabrication costs and techniques must be identified to repair defects on templates when they do occur. We describe inspection and repair methodologies and how it can be applied to the imprint template. For inspection, test patterns etched onto the template enable both a die-to-die comparison, to find nuisance defects, and also calibration of sensitivity to different types of preprogrammed defects. A state of the art deep UV photomask inspection system (KLA-Tencor model 526) can detect these events with about 70 nm threshold for imprint masks using reflection mode contrast. Initial scans are made at various stages of the imprint process: the processed mask, after dicing, and after several imprints. The scans show mostly isolated point defects at a density of ~ 10 to 100 per mm². To repair defects, studies were undertaken using RAVE’s nm650 tool which is essentially an AFM platform that relies upon a nano-machining technique for opaque defect removal. On S-FIL templates, the standard deviation for depth repairs in quartz from the target depth was found to be 3.1 nm (1σ). The spread in edge placement data for opaque line protrusions was 21.5 nm (1σ). Trench cuts through lines were successfully created with a minimum size of about 55nm. The repairs on the template were verified by imprinting the features on wafers. The range of depth offsets studied (-15 to +15) had no bearing on the imprinting process and the edge placement on wafers replicated the edge placement of the repaired templates. Trench cuts on the template were successfully filled with the imprint monomer and measured slightly larger than the minimum gap size. Finally, the imprinted wafers were used to pattern transfer features into 100nm of oxide.

Proceedings Article | 2 June 2004 Paper

Paper

Shaped beam technology for nano-imprint mask lithography

William Dauksher, Douglas Resnick, Peter Hudek, Dirk Beyer, David Mancini, Olaf Fortagne, Kevin Nordquist, Timothy Groves

Proceedings Volume 5504, (2004) https://doi.org/10.1117/12.568035

KEYWORDS: Electron beam lithography, Lithography, Photomasks, Photoresist processing, Etching, Chromium, Beam shaping, Nanotechnology, Image processing, Semiconducting wafers

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Proceedings Article | 20 May 2004 Paper

Paper

Evaluation of the Imprio 100 Step and Flash Imprint Lithography tool

Kathleen Gehoski, Douglas Resnick, David Mancini

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.537380

KEYWORDS: Semiconducting wafers, Etching, Optical alignment, Lithography, Lamps, Nanoimprint lithography, Scanning electron microscopy, Overlay metrology, Manufacturing, Mercury

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Proceedings Article | 20 May 2004 Paper

Paper

Mesoscale modeling for SFIL simulating polymerization kinetics and densification

Diana Convey, C. Grant Willson, Peter Fejes, Douglas Resnick, Yi Wei, William Dauksher, Kathleen Gehoski, Eui Kim, Sean Burns, Kevin Nordquist, Jason Meiring, Nicholas Stacey, Stephen Johnson, Ryan Burns, David Mancini, Gerard Schmid, Michael Dickey

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.536216

KEYWORDS: Etching, Polymerization, Molecules, Monte Carlo methods, Finite element methods, Lithography, Ultraviolet radiation, Molecular interactions, Scanning electron microscopy, Optical lithography

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Proceedings Article | 20 May 2004 Paper

Paper

Sub-80-nm contact hole patterning using Step and Flash Imprint Lithography

William Dauksher, Kathleen Gehoski, Douglas Resnick, Ngoc Le, Steven Young, David Mancini, Kevin Nordquist

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.537382

KEYWORDS: Etching, Lithography, Silicon, Critical dimension metrology, Semiconducting wafers, Scanning electron microscopy, Quartz, Oxides, Photomasks, Printing

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SPIE Journal Paper | 1 April 2004

Step and flash imprint lithography (S-FIL) is an attractive method for printing sub-100-nm geometries. Relative to other imprinting processes, S-FIL has the advantage of the template being transparent, thereby facilitating conventional overlay techniques.

Douglas Resnick, David Mancini, Kevin Nordquist, William Dauksher, Ian McMackin, Philip Schumaker, Ecron Thompson, S. Sreenivasan

JM3, Vol. 3, Issue 02, (April 2004) https://doi.org/10.1117/12.10.1117/1.1683261

KEYWORDS: Lithography, Printing, Etching, Semiconducting wafers, Photoresist processing, Image processing, Chromium, Distortion, Scanning electron microscopy, Silica

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Proceedings Article | 17 December 2003 Paper

Paper

Template fabrication for sub-80-nm contact hole patterning using step and flash imprint lithography

Ian McMackin, Kevin Nordquist, Douglas Resnick, William Dauksher, Kathleen Gehoski, David Mancini, Philip Schumaker

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518307

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Printing, Lithography, Etching, Photoresist processing, Cadmium, Scanning electron microscopy, Quartz, Electron beam lithography

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Proceedings Article | 16 June 2003 Open Access

Open Access

Paper

Imprint lithography: lab curiosity or the real NGL

William Dauksher, Stephen Johnson, David Mancini, Kevin Nordquist, Norman Schumaker, S. Sreenivasan, Todd Bailey, C. Grant Willson, Nicholas Stacey, John Ekerdt, Douglas Resnick

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.490126

KEYWORDS: Etching, Lithography, Semiconducting wafers, Silicon, Nanoimprint lithography, Chromium, Optical alignment, Image processing, Oxides, Inspection

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Proceedings Article | 16 June 2003 Paper

Paper

Employing Step and Flash imprint lithography for gate-level patterning of a MOSFET device

Todd Bailey, Nicholas Stacey, Britain Smith, William Dauksher, Chris Mackay, David Onsongo, J. Donnelly, David Mancini, Grant Willson, Sanjay Banerjee, John Ekerdt, Kevin Nordquist, S. Sreenivasan, Douglas Resnick

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.490142

KEYWORDS: Etching, Lithography, Field effect transistors, Optical alignment, Semiconducting wafers, Optical lithography, Photomasks, Oxides, Reactive ion etching, Halogens

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Proceedings Article | 16 June 2003 Paper

Paper

Advances in Step and Flash imprint lithography

John Ekerdt, Andrew Jamieson, William Dauksher, Kevin Nordquist, Stephen Johnson, Britain Smith, Nicholas Stacey, Douglas Resnick, David Mancini, Eunha Kim, C. Grant Willson, Michael Dickey, Todd Bailey

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.484985

KEYWORDS: Etching, Oxygen, Lithography, Polymerization, Silicon, Data modeling, Semiconducting wafers, Statistical analysis, Inspection, Materials processing

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Proceedings Article | 16 June 2003 Paper

Paper

Analysis of critical dimension uniformity for Step and Flash imprint lithography

Ian McMackin, Kevin Nordquist, Philip Schumaker, William Dauksher, Kathleen Gehoski, David Mancini, Douglas Resnick

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.484923

KEYWORDS: Semiconducting wafers, Lithography, Critical dimension metrology, Scanning electron microscopy, Quartz, Etching, Cadmium, Photomasks, Chromium, Photoresist processing

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Proceedings Article | 27 December 2002 Paper

Paper

Critical dimension and image placement issues for step and flash imprint lithography templates

Douglas Resnick, Pawitter Mangat, Zorian Masnyj, Kevin Nordquist, Kathleen Gehoski, William Dauksher, Eric Ainley, David Mancini

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467753

KEYWORDS: Quartz, Chromium, Distortion, Overlay metrology, Lithography, Image processing, Photomasks, Critical dimension metrology, Fabrication, Etching

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SPIE Journal Paper | 1 October 2002

High resolution templates for step and flash imprint lithography

Douglas Resnick, William Dauksher, David Mancini, Kevin Nordquist, Eric Ainley, Kathleen Gehoski, Jeff Baker, Todd Bailey, B. Choi, Stephen Johnson, S. Sreenivasan, John Ekerdt, C. Grant Willson

JM3, Vol. 1, Issue 03, (October 2002) https://doi.org/10.1117/12.10.1117/1.1508410

KEYWORDS: Lithography, Scanning electron microscopy, Glasses, Printing, Overlay metrology, Distortion, Chromium, Photomasks, Solids, Defect inspection

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Proceedings Article | 30 July 2002 Paper

Paper

Improved adhesion of photoresist to III-V substrates using PECVD carbon films

Daniel Chang, Steven Voight, Douglas Resnick, A. Talin, David Mancini, Steven Smith, Andrew Hooper

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474642

KEYWORDS: Carbon, Semiconducting wafers, Photonic integrated circuits, Gallium arsenide, Photoresist materials, Plasma enhanced chemical vapor deposition, Gallium, Arsenic, Deep ultraviolet, Head-mounted displays

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Proceedings Article | 30 July 2002 Paper

Paper

Bilayer and trilayer lift-off processing for i-line and DUV lithography

David Mancini, Douglas Resnick, Kathleen Gehoski, Laura Popovich

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474641

KEYWORDS: Photoresist processing, Metals, Deep ultraviolet, Lithography, Semiconducting wafers, Critical dimension metrology, Optical lithography, Reflectivity, Resistance, Etching

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Proceedings Article | 24 July 2002 Paper

Paper

New methods for fabricating step and flash imprint lithography templates

Stephen Johnson, Douglas Resnick, S. Sreenivasan, David Mancini, John Ekerdt, Kathleen Gehoski, Byung Choi, William Dauksher, Kevin Nordquist, Todd Bailey, Eric Ainley, A. Talin, C. Grant Willson, Matthew Colburn, Mario Meissl, Jeff Baker

Proceedings Volume 4608, (2002) https://doi.org/10.1117/12.437269

KEYWORDS: Etching, Chromium, Oxides, Semiconducting wafers, Quartz, Glasses, Scanning electron microscopy, Lithography, Printing, Photomasks

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Proceedings Article | 1 July 2002 Paper

Paper

High-resolution templates for step and flash imprint lithography

Douglas Resnick, John Ekerdt, Jeff Baker, Stephen Johnson, S. Sreenivasan, Todd Bailey, C. Grant Willson, William Dauksher, Kevin Nordquist, Kathleen Gehoski, David Mancini, Byung Choi, Eric Ainley

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472293

KEYWORDS: Etching, Quartz, Chromium, Scanning electron microscopy, Photomasks, Semiconducting wafers, Glasses, Lithography, Printing, Oxides

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Proceedings Article | 3 October 2001 Paper

Paper

Low surface energy polymeric release coating for improved contact print lithography

Daniel Chang, David Mancini, Douglas Resnick, Kathleen Gehoski, Laura Popovich

Proceedings Volume 4562, (2001) https://doi.org/10.1117/12.458339

KEYWORDS: Photomasks, Coating, Atrial fibrillation, Semiconducting wafers, Printing, Lithography, Polymers, Scanning electron microscopy, Photoresist materials, Particles

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Contact printing has been used for decades in many various lithography applications in the microelectronic industry. While vacuum contact printing processes offer sub-micron resolution and high throughput, they often suffer from some important drawbacks. One of the most common problems is degradation in both resolution and defect density which occurs when the same mask si used for multiple exposures without frequent mask cleans. This is largely due to the relatively high surface energy of both quartz and chrome and the tendency of most photoresists to adhere to these surfaces. As a result, when a mask and wafer are pressed into intimate contact, resist will tend to stick to the mask creating a defect on the wafer, effectively propagating defects to subsequent wafers. In this study, DuPont Teflon AF 1601S is used as a photomask coating and evaluated for its ability to act as a release agent and reduce defects while maintaining resolution for multiple exposures. Teflon AF is an amorphous, transparent, low surface energy, polymeric material that can be spin coated into a thin conformal film. Tests have shown that when using an uncoated mask in vacuum contact, resolution of 0.75 micrometers dense lines is severely degraded after less than 10 consecutive exposures. However, when the mask is coated, 0.75 micrometers dense lines were successfully resolved using vacuum contact for over 200 exposures without cleaning. In addition, it has been demonstrated that Teflon AF coatings impart to a mask a self-cleaning capability, since particles tend to stick to the photoresist rather than the mask. A coated mask, which was purposefully contaminated with particulates, resolved 0.75 micrometers dense lines on all but the first wafer of a series of 25 consecutive exposures. The patented mask releases layer process has successfully been demonstrated with a positive novolak resist. Additional data which describes the system chemistry, dilution and coating process, and film morphology are also presented.

Proceedings Article | 30 December 1999 Paper

Paper

Comparison of at-wavelenth inspection, printability, and simulation of nanometer-scale substrate defects in extreme ultraviolet lithography (EUVL)

Scott Hector, David Mancini, Bill Wilkinson, Christopher Walton, Avijit Ray-Chaudhuri, Guojing Zhang, Gregory Cardinale, Charles Cerjan, Zorian Masnyj, Jeffrey Bokor, Pei-yang Yan, Seongtae Jeong, Aaron Fisher, John Goldsmith, Pawitter Mangat, Scott Burkhart, Cindy Larson

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373339

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Multilayers, Inspection, Chromium, Scanning electron microscopy, Reticles, Silicon films, Printing

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Proceedings Article | 25 June 1999 Paper

Paper

Advanced negative i-line resist development on metal surfaces for next-generation lithography mask fabrication

Pawitter Mangat, Craig Ghelli, William Dauksher, Douglas Resnick, David Mancini

Proceedings Volume 3676, (1999) https://doi.org/10.1117/12.351117

KEYWORDS: Metals, Extreme ultraviolet lithography, Antireflective coatings, Silicon, Lithography, Charged-particle lithography, Mask making, Photomasks, Semiconducting wafers, Scanning electron microscopy

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Proceedings Article | 27 May 1996 Paper

Paper

Development of two new positive DUV photoresists for use with direct-write e-beam lithography

David Mancini, William Dauksher, James Thackeray, Douglas Resnick, Mark McCord, Kevin Nordquist

Proceedings Volume 2723, (1996) https://doi.org/10.1117/12.240461

KEYWORDS: Ultraviolet radiation, Semiconducting wafers, Deep ultraviolet, Etching, Electron beam lithography, Photoresist materials, Lithography, Silicon, Photoresist processing, Polymers

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Showing 5 of 21 publications

Conference Committee Involvement (2)

Emerging Lithographic Technologies VIII

24 February 2004 | Santa Clara, California, United States

Emerging Lithographic Technologies VII

25 February 2003 | Santa Clara, California, United States

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