Ga2O3 is one of the hot materials used in the preparation of solar blind ultraviolet detectors in recent years because of its wide band gap of 4.8 eV, high optical absorption coefficient, good thermal and chemical stability, strong anti-irradiation ability and low cost. Among them, amorphous Ga2O3 materials not only have the same photoelectric characteristics as single crystalline Ga2O3 materials, but also have the unique advantages of easy growth, easy preparation and low substrate requirements. The introduction of oxygen vacancy in Ga2O3 can produce intermediate energy level in its forbidden band, so that Ga2O3 has the ability of wide band detection from ultraviolet to visible. However, in photoconductive Ga2O3 photodetectors, there exists a contradictory relationship between responsiveness and response recovery speed, which is mainly attributed to the fact that photoconductive gain and sustained photoconductivity related to defects increase responsiveness and response recovery time, respectively. In addition, the mechanism of photoconductance gain and sustained photoconductance formation needs further clarification. In this paper, amorphous Ga2O3 photodetectors with good performance were prepared and the mechanism of continuous photoconductance in Ga2O3 photodetectors was investigated.
The combination of inorganic semiconductor and organic lead halide perovskite to prepare photodetectors can produce wider spectral response and better photoelectric performance to a certain extent, so it has been widely studied. Here, ZnO thin film was prepared by radio frequency magnetron sputtering, MAPbI3 was prepared by spin coating method, and ZnO/MAPbI3 composite UV-vis photodetector was prepared. ZnO is n-type semiconductor material, MAPbI3 is p-type semiconductor material and ZnO/MAPbI3 heterojunction is formed at the contact interface. Electrons from MAPbI3 diffuse into ZnO and holes from ZnO diffuse into MAPbI3, forming a built-in electric field. The surface of ZnO reacted photodesorption, the width of the depletion zone is reduced, leading to an increase in free carriers. With an operating voltage bias of 3 V, the ZnO/MAPbI3 photodetector represented significantly enhanced spectral reactivity (0.02 A/W). Therefore, our study will provide a reference for combining inorganic substances and perovskite to be used in high-performance photodetectors.
Amorphous gallium oxide (a-Ga2O3) is widely used in solar blind ultraviolet detection because of its suitable band gap, simple preparation process and excellent photoelectric properties. This article prepared high-quality a-Ga2O3 films on sapphire substrates by magnetron sputtering and evaporated Ti electrodes on the surface of the films to complete the preparation of the photodetector. Explored the optical properties of a-Ga2O3 thin films and the photoelectric performance of detectors. The detector exhibits excellent light response characteristics and high photocurrent. This experiment provides an effective reference value for the preparation of a-Ga2O3 thin films and the detection of their detectors in the solar blind band.
With the development of the high-speed information era, dual-band response devices have attracted much attention. In this paper, a Cu2O/TiO2 heterojunction photodetector (PD) prepared by hydrothermal method and electrochemical deposition method is reported, which is simple, low-cost, non-toxic and pollution-free, and has a dual-band spectral response in the ultraviolet and visible ranges, and the responsivities of 0.029 and 0.078 A W-1 are obtained, respectively. This study provides a reference for potential applications of high-performance dual-band PDs.
The metal-semiconductor-metal (MSM) structured ZnO photodetectors with same electrode spacings are made by radio frequency magnetron sputtering. A study of the thermal annealing effects on photodetectors with sequential annealing temperature (300, 400, 500 and 600 ℃).The responsivity of the photodetector was enlarged greatly after annealing the MSM device. Meanwhile, the enhancement in the dark current that resulted from the experiment was accompanied by the increasing annealing temperature. These results demonstrate that a simple route to improve the responsivities of photodetectors can be realized easily by annealing the devices.
Two sets of ZnO ultraviolet photodetectors were fabricated on the quartz and sapphire, respectively. Because of the different lattice matching of the substrate for the ZnO, the ZnO thin film based on the high matching substrate has a better crystalline quality and it is more sensitive to ultraviolet light. The ultraviolet photodetector based on the sapphire not only has a stronger absorption for the light, but also has a higher photo response than the ultraviolet photodetector based on the quartz. Which will have a profound influence for fabricating the excellent photodetectors.
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