In response to the issues of low accuracy and significant errors in manual measurements of high-precision workpieces, this paper proposes a high-precision, low-error dimension measurement algorithm. Focusing on triangular workpieces as the detection target, the proposed algorithm first applies threshold segmentation to the workpiece image, and then it employs an improved grayscale moment algorithm to identify sub-pixel edges. Subsequently, it uses an eight-neighborhood algorithm combined with Hough transform for rough line fitting and, finally, employs the RANSAC algorithm along with the least squares method for precise line fitting. After multiple measurements of the workpiece, experimental results demonstrate that the proposed algorithm achieves high-precision dimension measurement with a minimum error of 0.467 μm and an average error of 1.439 μm.
We demonstrate that near-infrared organic photodetectors (OPDs) based on vanadyl phthalocyanine (VOPc) and C60 have a higher detectivity and longer wavelength response (up to 935 nm) when fabricated by depositing VOPc on a p-sexiphenyl (p-6P) modified indium-tin-oxide (ITO) substrate. The film morphologies were imaged by atomic force microscopy (AFM) in tapping mode. X-ray diffraction patterns were obtained from a D8 Discover thin-film diffractometer. The OPDs deposited on a bare ITO substrate have larger dark and light current densities at -1 V because deposited VOPc films on bare ITO substrates have more defects according to the morphologies. VOPc film deposited on p-6P has a higher density of dimers than the bare ITO, leading to the increase of long-wavelength peak intensities in the EQE diagram.
Electron bombardment CMOS devices have the advantages of small size, light weight, and high imaging sensitivity. Studying how to obtain high-gain EBCMOS devices has a profound impact on industries such as low-light night vision technology. In the experiment, we combined Monte-Carlo ideas with the physical model of the interaction between the low-energy electrons and the substrate material, and the movement trajectory and distribution of the electrons in the solid were simulated, which proved the existence of the electron multiplication benefit. In the experiment, the incident electron energy is 4KeV, the incident electron beam diameter is 20nm, the thickness of the passivation layer is 60nm, and the thickness of the p-type epitaxial layer is 10 microns. The electron collection efficiency of the substrate material under uniform doping is about 46.5%. The maximum theoretical collection efficiency under gradient doping can reach 84%. The research on electron bombardment CMOS devices has certain reference value.
According to the interaction model between low-energy electrons and solids, combined with Monte Carlo calculation method, MATLAB software was used to simulate the electron scattering trajectories of a large number of photoelectrons incident on EBCMOS substrates. The energy loss rate of different incident photoelectrons on the substrate was analyzed. The influence of electron incidence depth and the range of electron motion. When the incident photoelectron energy increases, the energy loss rate gradually decreases, and the electron incident depth and the electron motion range increase. The simulation results can provide reference and basis for the design and preparation of the back-illuminated CMOS device substrate.
With the demand for back-illuminated CMOS/CCD and electron bombardment imaging devices, the requirement for chip thickness has become the key to various imaging device fabrication techniques. In this paper, the back of semiconductor silicon wafer was thinned by means of mechanical grinding and wet etching. The thinned chip was tested by the step meter and atomic force microscope. The chip thinning technology realizes the thickness of 15 μm, which provides technical support for the preparation of backlight imaging devices or electron bombardment imaging devices.
We demonstrate highly efficient organic ultraviolet photodetectors using 4,4’,4’’ -tris[3-methyl-pheny(phenyl) amino] triphenylamine (m-MTDATA) and aluminum Tris(8-Hydroxyquinolinate) Synonym Alq3). The optimized photodetector delivers a photocurrent of 1.40 mA/cm2 at10 V, corresponding to a response of 127 mA/W under an illumination of 375 nm UV light irradiation with an intensity of 10.5 mW/cm2 and a detectivity of 2.15×1011 cm Hz1/2 /W. The high response is attributed to the larger band offset at m-MTDATA/ Alq3 heterojunction, the suppression of radiative decay of m-MTDATA and efficient electron transfer from m-MTDATA to Alq3. The working mechanism of harvesting high performance is also discussed in detail.
Electron bombardment of semiconductor gain as the main characteristics of electronic bombardment devices affect the overall performance of the device. According to weak signal detection theory, developed a set of multiplying electron gain test system including pre-amplifier circuit and FPGA-based high-speed signal acquisition system. The tinned semiconductor sample was tested experimentally, for the relationship between gain performance and incident electron energy. The experimental with incident electron energy(1500-2000eV) bombardment 65μm of semiconductor sample, results show the multiply electron gain with the increase of the incident electron energy, which will provide theoretical basis and technical support to further manufacture of high performance electron bombarded semiconductor sensors.
The vanadyl phthalocyanine (VOPc) organic thin film transistors (OTFTs) were fabricated on the various organosilane self-assembled monolayer (SAM) modified substrates. And the effect of the surface properties on the performance of these transistors was studied. The atomic force morphologies and X-ray diffraction (XRD) spectrums of vanadyl phthalocyanine films on different SAM-modified surfaces were studied. They reveal that the terminal functional groups of organosilane affect the growth of VOPc film and device performance. The VOPc film on octadecyltrichlorosilane (OTS) modified substrate has larger crystal size and effective crystal thickness than those on phenyltrichlorosilane (PTS), 1H,1H,2H,2H-Perfluorodec-yltrichlorosilane (FDTS) as well as non-modified substrate, which contributes the mobility of corresponding device several and several dozen times relative to other ones. The effective crystal thickness and crystal grain size of VOPc film on PTS is between that on OTS treated and that on non-modified substrate due to the stronger attractive force between VOPc and SiO2. The VOPc films’ performance and effective crystal thickness on FDTS treated are worse than that on PTS due to the existents of attractive force between –CF3 and VOPc.
We have discussed the effect of the residual gas in the Al metal cathode deposition process and
consequently influence the performance of organic photovoltaic devices (such as organic photoelectron detector or
solar cell). We believe that the origin of degradation in Jsc and FF from the Al cathode device should be the
formation of AlOx in the C60-Al interface, which contaminate the interface and plays a role like an energy barrier
that block the charge collect process. To solve this problem the Ag and Alq3 layer had been inserted before the
Al. Owing to the advantageous of Alq3 and Ag layer, the device which Al cathode prepared at a lower vacuum
condition exhibits a comparable performance to that device which Al cathode deposited in regular situation. As
an additional benefit, since the introducing of Alq3/Ag layer in the VOPc/C60 organic photovoltaic device performs
a better near-infrared response, this phenomenon has been confirmed by means of both simulation and
experimental data. So the design of our new cathode structure provides a degree of freedom to modulate the light
absorption for organic photovoltaic devices in short-wave and long-wave.
KEYWORDS: Monte Carlo methods, Scattering, Electron beams, Silicon, Night vision, Active sensors, Sensors, Laser scattering, Semiconductors, Visual process modeling
The multiplying electron distribution within the electron multiplier layer for electron bombarded active pixel
sensor (EBAPS) was simulated. The photoelectron scatting trajectories in electron multiplier layer were simulated based on
the low-energy electron-solid interaction model and Monte Carlo method. According to semiconductor theory, the influence
factors (the incident electron energy, depth and beam diameter) how affecting the energy loss rate were studied. Therefore,
the photoelectron scatting trajectories and multiplying electron distribution in electron multiplier layer can be simulated,
which will provide theoretical basis to further simulate the charge collection efficiency of EBAPS.
An optoelectronic date acquisition system is designed based on FPGA. FPGA chip that is EP1C3T144C8 of Cyclone devices from Altera corporation is used as the centre of logic control, XTP2046 chip is used as A/D converter, host computer that communicates with the date acquisition system through RS-232 serial communication interface are used as display device and photo resistance is used as photo sensor. We use Verilog HDL to write logic control code about FPGA. It is proved that timing sequence is correct through the simulation of ModelSim. Test results indicate that this system meets the design requirement, has fast response and stable operation by actual hardware circuit test.
KEYWORDS: Microchannel plates, Image intensifiers, Night vision, Computer simulations, Finite element methods, Optical simulations, 3D modeling, Chemical elements, Image resolution, Electron beams
Low-light-level night vision technology is magnifying low light level signal large enough to be seen by naked eye, which uses the photons - photoelectron as information carrier. Until the micro-channel plate was invented, it has been possibility for the realization of high performance and miniaturization of low-light-level night vision device. The device is double-proximity focusing low-light-level image intensifier which places a micro-channel plate close to photocathode and phosphor screen. The advantages of proximity focusing low-light-level night vision are small size, light weight, small power consumption, no distortion, fast response speed, wide dynamic range and so on. It is placed parallel to each other for Micro-channel plate (both sides of it with metal electrode), the photocathode and the phosphor screen are placed parallel to each other. The voltage is applied between photocathode and the input of micro-channel plate when image intensifier works. The emission electron excited by photo on the photocathode move towards to micro-channel plate under the electric field in 1st proximity focusing region, and then it is multiplied through the micro-channel. The movement locus of emission electrons can be calculated and simulated when the distributions of electrostatic field equipotential lines are determined in the 1st proximity focusing region. Furthermore the resolution of image tube can be determined. However the distributions of electrostatic fields and equipotential lines are complex due to a lot of micro-channel existing in the micro channel plate. This paper simulates electrostatic distribution of 1st proximity region in double-proximity focusing low-light-level image intensifier with the finite element simulation analysis software Ansoft maxwell 3D. The electrostatic field distributions of 1st proximity region are compared when the micro-channel plates’ pore size, spacing and inclination angle ranged. We believe that the electron beam movement trajectory in 1st proximity region will be better simulated when the electronic electrostatic fields are simulated.
KEYWORDS: Ions, Electrons, Signal to noise ratio, Image intensifiers, Monte Carlo methods, Interference (communication), Microchannel plates, Night vision, Scattering, Image quality
To analyze the effect of ion barrier film in micro-channel plate on the performance of proximity focusing low-light-level
image intensifier, the noise characteristics of ion barrier film are studied. The transmission electrons’ distribution for
those have transmitted ion barrier films is determined by simulating the collision interaction between the incident
electrons and ion barrier film with Monte Carlo method. Furthermore, the relationship model of the incident electrons
and transmission electrons are established by time differential method. We simulate how the incident electron energy and
ion barrier film thickness affect the noise factor of ion barrier film. The simulation analysis results reveal that the noise
factors gradually decreased with the increase of incident electron energy (0.1 KeV - 2.0 KeV) and decreasing of film
thickness (1 to 8 nm). So the tendency of simulation results is accordant with the actual devices. The smaller noise factor
means the better image quality for low-light-level image device, and the simulation results suggest how to realize the ion
barrier film in low light level image intensifier with low noise factor. Therefore, the study of ion barrier film’s noise
characteristics provides theoretical and technical support for optimization of the
three generations low-light-level device’s performance.
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