Dr. Deh-Ming Shyu Profile

Dr. Deh-Ming Shyu

at Industrial Technology Research Institute

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Author

Publications (13)

Proceedings Article | 13 May 2013 Paper

Infrared differential interference contrast microscopy for overlay metrology on 3D-interconnect bonded wafers

Yi-sha Ku, Deh-Ming Shyu, Yeou-Sung Lin, Chia-Hung Cho

Proceedings Volume 8788, 87881Z (2013) https://doi.org/10.1117/12.2021039

KEYWORDS: Semiconducting wafers, Overlay metrology, Wafer bonding, Digital image correlation, Microscopy, Prisms, Microscopes, Infrared radiation, Silicon, Error analysis

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Overlay metrology for stacked layers will be playing a key role in bringing 3D IC devices into manufacturing. However, such bonded wafer pairs present a metrology challenge for optical microscopy tools by the opaque nature of silicon. Using infrared microscopy, silicon wafers become transparent to the near-infrared (NIR) wavelengths of the electromagnetic spectrum, enabling metrology at the interface of bonded wafer pairs. Wafers can be bonded face to face (F2F) or face to back (F2B) which the stacking direction is dictated by how the stacks are carried in the process and functionality required. For example, Memory stacks tend to use F2B stacking enables a better managed design. Current commercial tools use single image technique for F2F bonding overlay measurement because depth of focus is sufficient to include both surfaces; and use multiple image techniques for F2B overlay measurement application for the depth of focus is no longer sufficient to include both stacked wafer surfaces. There is a need to specify the Z coordinate or stacking wafer number through the silicon when visiting measurement wafer sites. Two shown images are of the same (X, Y) but separate Z location acquired at focus position of each wafer surface containing overlay marks. Usually the top surface image is bright and clear; however, the bottom surface image is somewhat darker and noisier as an adhesive layer is used in between to bond the silicon wafers. Thus the top and bottom surface images are further processed to achieve similar brightness and noise level before merged for overlay measurement. This paper presents a special overlay measurement technique, using the infrared differential interference contrast (DIC) microscopy technique to measure the F2B wafer bonding overlay by a single shot image. A pair of thinned wafers at 50 and 150 μm thickness is bonded on top of a carrier wafer to evaluate the bonding overlay. It works on the principle of interferometry to gain information about the optical path length of the stacked wafers, to enhance the image contrast of overlay marks features even though they are locating in different Z plane. A two dimensional mirror-symmetric overlay marks for both top and bottom processing wafers is designed and printed in each die in order to know and realize the best achievable wafer to wafer bonding processing. A self-developed analysis algorithms is used to identify the overlay error between the stacking wafers and the interconnect structures. The experimental overlay results after wafer bonding including inter-die and intra-die analysis results will be report in the full paper. Correlation of overlay alignment offset data to electrical yield, provides an early indication of bonded wafer yield.

Proceedings Article | 6 April 2012 Paper

Measurement of through silicon via etch profile by dark-field optical microscope

Deh-Ming Shyu, Yi-sha Ku

Proceedings Volume 8324, 832414 (2012) https://doi.org/10.1117/12.916370

KEYWORDS: Optical microscopes, Scanning electron microscopy, Etching, Silicon, Image processing, Microscopes, Objectives, Algorithm development, Semiconducting wafers, Metrology

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Proceedings Article | 3 April 2012 Paper

In-line metrology of 3D interconnect processes

Y. Ku, D. Shyu, P. Chang, W. Hsu

Proceedings Volume 8324, 832411 (2012) https://doi.org/10.1117/12.915810

KEYWORDS: Semiconducting wafers, Metrology, 3D metrology, Silicon, Reflectivity, Copper, Metals, Infrared imaging, Confocal microscopy, Reflectometry

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Proceedings Article | 27 May 2011 Paper

3D interconnect metrology in CMS/ITRI

Y. S. Ku, D. M. Shyu, W. T. Hsu, P. Y. Chang, Y. C. Chen, H. L. Pang

Proceedings Volume 8082, 80820I (2011) https://doi.org/10.1117/12.889401

KEYWORDS: Semiconducting wafers, Silicon, Copper, 3D metrology, Metrology, Confocal microscopy, Reflectivity, Microscopes, Metals, Annealing

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SPIE Journal Paper | 1 December 2009

Accuracy of diffraction-based overlay metrology using a single array target

Yi-sha Ku, Hsiu-Lan Pang, Wei-Te Hsu, Deh-Ming Shyu

OE, Vol. 48, Issue 12, 123601, (December 2009) https://doi.org/10.1117/12.10.1117/1.3275449

KEYWORDS: Overlay metrology, Diffraction, Scatterometry, Scatter measurement, Critical dimension metrology, Optical engineering, Detection and tracking algorithms, Diffraction gratings, Photoresist materials, Semiconductors

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Proceedings Article | 10 September 2009 Paper

A novel method for overlay measurement by scatterometry

Wei-Te Hsu, Yi-Sha Ku, Deh-Ming Shyu

Proceedings Volume 7432, 74320F (2009) https://doi.org/10.1117/12.825091

KEYWORDS: Overlay metrology, Diffraction, Scatterometry, Diffraction gratings, Microscopes, Metrology, Imaging systems, Fresnel lenses, Scatter measurement, Reflectivity

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Proceedings Article | 21 August 2009 Paper

Improved diffraction-based overlay metrology by use of two dimensional array target

Yi-Sha Ku, Hsiu-Lan Pang, Weite Hsu, Deh-Ming Shyu

Proceedings Volume 7405, 74050C (2009) https://doi.org/10.1117/12.825524

KEYWORDS: Overlay metrology, Diffraction, Scatterometry, Signal processing, Critical dimension metrology, Photoresist materials, Diffraction gratings, Scatter measurement, Electromagnetism, Model-based design

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Proceedings Article | 24 March 2009 Paper

Angle-resolved scatterfield microscope for linewidth measurement

Deh-Ming Shyu, Yi-sha Ku, Wei-Te Hsu

Proceedings Volume 7272, 72721L (2009) https://doi.org/10.1117/12.813982

KEYWORDS: Spatial light modulators, Objectives, Fresnel lenses, Modulation, Silicon, Phase modulation, Microscopes, Relays, Optical microscopes, Metrology

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SPIE Journal Paper | 1 August 2008

Optimal measurement method for scatterometer-based overlay metrology

Yi-Sha Ku, Weite Hsu, Sen-Yih Chou, Deh-Ming Shyu

OE, Vol. 47, Issue 08, 083604, (August 2008) https://doi.org/10.1117/12.10.1117/1.2969120

KEYWORDS: Overlay metrology, Diffraction, Diffraction gratings, Scatterometry, Scatter measurement, Signal processing, Optical design, Optical engineering, Critical dimension metrology, Reflectivity

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Proceedings Article | 22 March 2008 Paper

Overlay measurement based on dual-overlay grating image

Deh-Ming Shyu, Yi-sha Ku, Shu-Ping Dong

Proceedings Volume 6922, 69220Q (2008) https://doi.org/10.1117/12.772388

KEYWORDS: Overlay metrology, Image analysis, Diffraction gratings, Metrology, Objectives, Optical filters, Optical imaging, Process control, Image resolution, Diffraction

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Proceedings Article | 5 April 2007 Paper

Angular scatterometry for line-width roughness measurement

Deh-Ming Shyu, Yi-Sha Ku, Nigel Smith

Proceedings Volume 6518, 65184G (2007) https://doi.org/10.1117/12.711734

KEYWORDS: Line width roughness, Scatterometry, Amplifiers, Diffraction gratings, Calibration, Semiconductors, Light scattering, Reflectivity, Diffraction, Light sources

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Proceedings Article | 24 March 2006 Paper

Influence of semiconductor manufacturing process variation on device parameter measurement for angular scatterometry

Shih-Chun Wang, Yi-Sha Ku, Deh-Ming Shyu, Chun-Hung Ko, Nigel Smith

Proceedings Volume 6152, 61521J (2006) https://doi.org/10.1117/12.655995

KEYWORDS: Critical dimension metrology, Scatterometry, Refractive index, Scatter measurement, Optical properties, Measurement devices, Reflectivity, Semiconductor manufacturing, Process control, Metrology

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The influence of semiconductor manufacturing process variation on device parameter measurements for angular scatterometry was studied. Process variations, e.g, temperature and pressure variation of poly deposition, are considered to affect the optical properties of the deposition layer, and hence cause inaccurate model-based scatterometry measurements. This study investigates measurement error of device parameters if the optical properties change but the model stays for the same in angular scatterometry. A series of diffracted signatures was generated whose optical properties change slightly but keep the same structure. This work measured n (refractive index) and k (extinction index) of materials on wafer from the nominal process condition. Then, n and k are used to create a comparison library. The comparison library fixes all parameters other than varying CD (critical dimension) parameter. When poly layer n changes, the scattering signatures also change. The inaccuracy of CD measurement could be evaluated by comparing varying signatures due to optical properties change to the nominal process condition. An optimal structure design and feature region selection algorithm was developed to reduce errors introduced by these process variations to CD measurement. For angular scatterometry, the reflectance at some scan angles performs lower sensitivity to the optical parameters variation than the reflectance at other scan angles. By determining which scan angles contain less sensitivity and further optimize target design within the process variation range, the influence of process variation on device parameter measurement and the number of measurements used in the inversion process can be reduced. By using 65nm and 45nm as design rules, optimized grating structure with most sensitivity to CD measurement and the least influence on poly refractive index variation were obtained. The optimized grating structures are suitable for inline semiconductor process control of CD measurement for scatterometry.

Proceedings Article | 10 May 2005 Paper

Comparisons of overlay measurement using conventional bright-field microscope and angular scatterometer

Chun-Hung Ko, Yi-sha Ku, Nigel Smith, Deh-Ming Shyu, Shih-Chun Wang, Sheng-Hua Lu

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.599306

KEYWORDS: Overlay metrology, Microscopes, Reflectance spectroscopy, Reflectivity, Scatterometry, Silicon, Metrology, Spectroscopy, Diffraction gratings, Light

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Showing 5 of 13 publications

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