Dr. Derek S. Bale Profile

Dr. Derek S. Bale

at eV Products Inc

SPIE Involvement:

Author

Publications (2)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 21 September 2006 Paper

Design of high-performance CdZnTe quasi-hemispherical gamma-ray CAPture plus detectors

Derek Bale, Csaba Szeles

Proceedings Volume 6319, 63190B (2006) https://doi.org/10.1117/12.683702

KEYWORDS: Sensors, Crystals, Cesium, Sensor performance, Digital signal processing, Electrodes, Electron transport, Device simulation, Electric field sensors, Gamma radiation

Read Abstract +

In this paper we report on the simulation, design, and testing of high performance CdZnTe quasi-hemispherical CAPture^TM Plus radiation detectors. Quasi-hemispherical CdZnTe detectors offer a cost effective alternative to other single-polarity (electron-only) detector configurations such as co-planar grid, pixilated or Frish ring CdZnTe detectors with comparable energy resolution both in the high (>500 keV) and low energy range (<500 keV). We have used the device simulation package eVDSIM to design optimal electrode geometry together with the necessary material selection criteria for charge transport properties of the CdZnTe crystals. A test set of 10x10x5mm³ CAPture^TM Plus detectors has been built using state-of-the art fabrication technology. The measured spectral and efficiency performance of these detectors is compared to the theoretical predictions of simulation. Our results demonstrate that with careful selection of uniform material and high-quality fabrication, this design of CAPture^TM Plus detectors is capable of regularly achieving FWHM @ 81keV of 5%, FWHM @ 122keV of <3%, and FWHM @ 662keV of <2%.

Proceedings Article | 21 September 2006 Paper

Fabrication of high-performance CdZnTe quasi-hemispherical gamma-ray CAPture plus detectors

Csaba Szeles, Derek Bale, Joseph Grosholz, Gary Smith, Michael Blostein, John Eger

Proceedings Volume 6319, 631909 (2006) https://doi.org/10.1117/12.683552

KEYWORDS: Sensors, Crystals, Tellurium, Digital signal processing, Microscopy, Infrared microscopy, Electron transport, Electrodes, Gamma radiation, Surface finishing

Read Abstract +

We report on the material selection, testing and fabrication technology development of high performance CdZnTe quasihemispherical CAPture^TM Plus radiation detectors. Quasi-hemispherical CdZnTe detectors offer a cost effective alternative to other single-polarity (electron-only) detector configurations such as co-planar grid, pixilated or Frisch ring CdZnTe detectors with comparable energy resolution both in the high (>500 keV) and low energy range (<500 keV). The performance of the quasi-hemispherical detectors is controlled by charge transport properties of the CdZnTe crystals, quality of device fabrication and device integration. Similarly to other single-polarity CdZnTe device configurations the charge transport uniformity of the CdZnTe crystals is critical for achieving high energy resolution. We realized this by carefully selecting high electron transport CdZnTe crystals (μτ_e greater than or equal to 6.0×10^-3 cm²/V) with uniform distribution of structural defects. Infra-red microscopy was employed for structural defect mapping of the crystals. Low sub-surface damage state-of-the art multi- and single-wire saw technologies were used to slice and dice the single crystal detector elements out of the CdZnTe ingots. Dimensional control of the crystals was preserved throughout chemical etching and chemo-mechanical polishing by minimizing material removal. Device fabrication employing state-of-the art photolithography, electrode deposition and surface passivation enabled the application of bias voltages as high as 5000 V/cm on the devices. With carefully selected high uniformity CdZnTe crystals and low-noise preamplifier energy resolution better than 4.8% FWHM at 81 keV, 3.0% FWHM at 122 keV and 1.5% FWHM at 662 keV was achieved on 10×10×5 mm³ quasi-hemispherical detectors.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years