Prof. Dieter H. Bimberg Profile

Prof. Dieter H. Bimberg

Excecutive Director at CIOMP

SPIE Involvement:

Author

Publications (88)

Proceedings Article | 13 March 2024 Presentation + Paper

Presentation + Paper

High-speed MBE-grown 1550 nm wafer-fused VCSELs

Georgiy Sapunov, Si-Cong Tian, Sergey Blokhin, Iakov Kovach, Denis Papylev, Stanislav Rochas, Vladislav Andryushkin, Evgenii Kolodeznyi, Andrey Babichev, Andrey Gladyshev, Innokenty Novikov, Alexey Blokhin, Mikhail Bobrov, Nikolay Maleev, Kirill Voropaev, Victor Ustinov, Mansoor Ahamed, Konstantin Shugurov, Anton Egorov, Leonid Karachinsky, Dieter Bimberg

Proceedings Volume 12904, 129040K (2024) https://doi.org/10.1117/12.3000473

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Semiconducting wafers, Indium gallium arsenide, Temperature metrology, Quantum wells, Heterojunctions, Design, Relative intensity noise

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Proceedings Article | 13 March 2024 Presentation + Paper

Presentation + Paper

Multi-hole aperture VCSELs: single mode, high power, low resistance

Mansoor Ahamed, Georgiy Sapunov, Si-Cong Tian, Dieter Bimberg

Proceedings Volume 12904, 129040B (2024) https://doi.org/10.1117/12.3000469

KEYWORDS: Vertical cavity surface emitting lasers, Resistance, Design, Emission wavelengths, Metals, Thermal stability, Thermal effects, Mirrors, Semiconducting wafers

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Proceedings Article | 25 May 2022 Presentation

Presentation

Vertical-cavity surface-emitting lasers with post-supported high-contrast gratings towards 100 Gbps data rate

Anjin Liu, Jing Zhang, Chenxi Hao, Dieter Bimberg

Proceedings Volume PC12141, PC1214105 (2022) https://doi.org/10.1117/12.2623830

KEYWORDS: Vertical cavity surface emitting lasers, Photonics, Reflectors, Reflectivity, Oxides, Modulation, Mirrors, Indium gallium phosphide, Distributed Bragg reflectors, Charge-coupled devices

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Proceedings Article | 9 March 2022 Presentation

Presentation

Electrically-injected vertical-cavity surface-emitting lasers with post-supported high-contrast gratings

Jing Zhang, Chenxi Hao, Dieter Bimberg, Anjin Liu

Proceedings Volume PC12020, PC1202005 (2022) https://doi.org/10.1117/12.2623587

KEYWORDS: Vertical cavity surface emitting lasers, Wavelength division multiplexing, Three dimensional sensing, Resonance enhancement, Reflectivity, Oxides, Optical interconnects, Modulation, Mirrors, Facial recognition systems

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Proceedings Article | 2 March 2020 Paper

Paper

Field-of-view control of segmented NIR VCSEL arrays for next-generation flash LiDARs

Babu Dayal Padullaparthi, Takemasa Tamanuki, Dieter Bimberg

Proceedings Volume 11262, 112620Z (2020) https://doi.org/10.1117/12.2564489

KEYWORDS: Beam controllers, Time of flight range image sensors, Vertical cavity surface emitting lasers, LIDAR, Refractive index, Near infrared, Diffusers, Image segmentation, Sensor technology

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Proceedings Article | 9 April 2019 Paper

Paper

Nanophotonics for a green internet

Dieter Bimberg, Gunter Larisch

Proceedings Volume 10922, 109220B (2019) https://doi.org/10.1117/12.2506015

KEYWORDS: Vertical cavity surface emitting lasers, Data transmission, Internet, Receivers, Nanophotonics, Energy efficiency, Standards development, Multimode fibers, Data centers, Optical amplifiers

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Proceedings Article | 6 November 2018 Paper

Paper

VCSEL with finite-size high-contrast metastructure

Anjin Liu, Wanhua Zheng, Dieter Bimberg

Proceedings Volume 10812, 1081202 (2018) https://doi.org/10.1117/12.2501231

KEYWORDS: Reflectivity, Vertical cavity surface emitting lasers, Optical sensors, Data communications, Sensors, Optoelectronics, Diffraction gratings

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Proceedings Article | 9 May 2018 Presentation + Paper

Presentation + Paper

Recent advances in InAs/GaAs quantum dot lasers with short optical feedback

F. Grillot, H. Huang, L. C. Lin, C. Y. Chen, D. Arsenijevic, D. Bimberg, F. Y. Lin

Proceedings Volume 10682, 106820Y (2018) https://doi.org/10.1117/12.2314708

KEYWORDS: Chaos, Quantum dot lasers, Laser applications, Transmitters, LIDAR

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Proceedings Article | 21 February 2018 Presentation + Paper

Presentation + Paper

Ultrafast and nonlinear dynamics of InAs/GaAs semiconductor quantum dot lasers

Frédéric Grillot, D. Arsenijevic, H. Huang, D. Bimberg

Proceedings Volume 10543, 105430M (2018) https://doi.org/10.1117/12.2299678

KEYWORDS: Ultrafast phenomena, Mode locking, Signal generators, Semiconductor lasers, Nonlinear dynamics, Radar, Telecommunications, Wireless communications, Microwave radiation, Terahertz radiation

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Proceedings Article | 9 November 2016 Paper

Paper

Recent progress in 1.3- and 1.5-um waveband wafer-fused VCSELs

A. Mereuta, A. Caliman, A. Sirbu, V. Iakovlev, D. Ellafi, A. Rudra, P. Wolf, D. Bimberg, E. Kapon

Proceedings Volume 10017, 1001702 (2016) https://doi.org/10.1117/12.2246208

KEYWORDS: Vertical cavity surface emitting lasers, Quantum wells, Semiconducting wafers, Modulation, Temperature metrology, Single mode fibers, Eye, Data transmission, Coarse wavelength division multiplexing, Reflectivity

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Proceedings Article | 28 April 2016 Paper

Paper

InAs/GaAs excited state quantum-dot transmitters operating under long-delayed optical feedback

Heming Huang, Kevin Schires, Frédéric Grillot, Dejan Arsenijević, Tagir Sadeev, Dieter Bimberg

Proceedings Volume 9892, 98920C (2016) https://doi.org/10.1117/12.2227953

KEYWORDS: Semiconductor lasers, Laser optics, Quantum dot lasers, Chaos, Fabry–Perot interferometers, Optical testing, Spectrum analysis, Mirrors, Waveguides

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Proceedings Article | 28 April 2016 Paper

Paper

Quantum-dot lasers for 35 Gbit/s pulse-amplitude modulation and 160 Gbit/s differential quadrature phase-shift keying

Dejan Arsenijević, Dieter Bimberg

Proceedings Volume 9892, 98920S (2016) https://doi.org/10.1117/12.2230758

KEYWORDS: Modulation, Laser applications, Semiconductor lasers, Laser optics, Mode locking, Gallium arsenide, Data transmission, Quantum optics, Semiconductor lasers, Phase shift keying, Eye, Picosecond phenomena, Integrated optics, Receivers, Oscilloscopes

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Proceedings Article | 28 April 2016 Paper

Paper

Optical nonlinearities in InAs/GaAs injection-locked quantum dot light-based emitters

Frédéric Grillot, Heming Huang, Kevin Schires, Tagir Sadeev, Dejan Arsenijevic, Dieter Bimberg

Proceedings Volume 9892, 98920T (2016) https://doi.org/10.1117/12.2230235

KEYWORDS: Semiconductor lasers, Nonlinear optics, Nanostructures, Frequency conversion, Photonic integrated circuits, Semiconductors, Four wave mixing, Wavelength division multiplexing, Transparency, Modulation, Terahertz radiation, Laser optics, Quantum dots, Resonance enhancement, Laser damage threshold, Tunable lasers

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Proceedings Article | 4 March 2015 Paper

Paper

Impact of a large negative gain-to-cavity wavelength detuning on the performance of InGaAlAs oxide-confined vertical-cavity surface-emitting lasers

Sergey Blokhin, Mikhail Bobrov, Nikolai Maleev, Alexander Kuzmenkov, Alexey Sakharov, Alexey Blokhin, Philip Moser, James Lott, Dieter Bimberg, Viktor Ustinov

Proceedings Volume 9381, 93810W (2015) https://doi.org/10.1117/12.2080942

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Oxides, Gallium arsenide, Semiconducting wafers, Telecommunications, Computing systems, Switching, Integrated optics, Optical microcavities

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Proceedings Article | 4 March 2015 Paper

Paper

Maximizing the temperature insensitivity, energy efficiency, and bit rate of 980-nm VCSELs via small oxide-aperture diameters and photon lifetime tuning

Philip Moser, Maya Volwahsen, Gunter Larisch, James Lott, Dieter Bimberg

Proceedings Volume 9381, 93810T (2015) https://doi.org/10.1117/12.2077771

KEYWORDS: Vertical cavity surface emitting lasers, Energy efficiency, Modulation, Optical interconnects, Oxides, Temperature metrology, Internet, Picosecond phenomena, Data centers, Integrated circuits

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Proceedings Article | 4 March 2015 Paper

Paper

Single and double oxidations in a 980-nm VCSEL: impact on certain electrical and optical properties

Patrycja Śpiewak, Tomasz Czyszanowski, Jarosław Walczak, Robert Sarzała, Philip Moser, Dieter Bimberg, James Lott, Michał Wasiak

Proceedings Volume 9381, 93810N (2015) https://doi.org/10.1117/12.2078184

KEYWORDS: Oxides, Vertical cavity surface emitting lasers, Electroluminescent displays, Capacitance, 3D modeling, Resistance, Optical properties, Active optics, Modulation, Oxidation

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Proceedings Article | 4 March 2015 Paper

Paper

Extraction and analysis of high-frequency response and impedance of 980-nm VCSELs as a function of temperature and oxide aperture diameter

Philip Wolf, Hui Li, Philip Moser, Gunter Larisch, James Lott, Dieter Bimberg

Proceedings Volume 9381, 93810H (2015) https://doi.org/10.1117/12.2077182

KEYWORDS: Vertical cavity surface emitting lasers, Temperature metrology, Oxides, Capacitance, Resistance, Modulation, Quantum wells, Data transmission, Optical interconnects, Data modeling

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Proceedings Article | 2 May 2014 Paper

Paper

Wider-frequency combs generation, noise reduction, and repetition rate tuning in quantum-dot mode-locked lasers

T. Habruseva, D. Arsenijević, D. Bimberg, Guillaume Huyet, S. Hegarty

Proceedings Volume 9134, 91340F (2014) https://doi.org/10.1117/12.2052351

KEYWORDS: Mode locking, Frequency combs, Modulation, Denoising, Hybrid optics, Semiconductor lasers, Laser optics, Optical filters, Laser applications, Picosecond phenomena

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Proceedings Article | 2 May 2014 Paper

Paper

Green nanophotonics for future datacom and Ethernet networks

Dieter Bimberg, Dejan Arsenijević, Gunter Larisch, Hui Li, James Lott, Philip Moser, Holger Schmeckebier, Philip Wolf

Proceedings Volume 9134, 913402 (2014) https://doi.org/10.1117/12.2053027

KEYWORDS: Vertical cavity surface emitting lasers, Mode locking, Internet, Optical interconnects, Modulation, Nanophotonics, Picosecond phenomena, Data centers, Data communications, Oxides

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Proceedings Article | 7 March 2014 Paper

Paper

Metal-cavity submonolayer quantum-dot surface-emitting microlasers

Pengfei Qiao, Chien-Yao Lu, Dieter Bimberg, Shun Lien Chuang

Proceedings Volume 8980, 89800E (2014) https://doi.org/10.1117/12.2042210

KEYWORDS: Quantum dots, Metals, Silver, Optical microcavities, Quantum wells, Indium arsenide, Mirrors, Reflectors, Vertical cavity surface emitting lasers, Gallium arsenide

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Proceedings Article | 27 February 2014 Paper

Paper

Energy-efficient oxide-confined high-speed VCSELs for optical interconnects

Philip Moser, Philip Wolf, Gunter Larisch, Hui Li, James Lott, Dieter Bimberg

Proceedings Volume 9001, 900103 (2014) https://doi.org/10.1117/12.2044319

KEYWORDS: Vertical cavity surface emitting lasers, Oxides, Modulation, Optical interconnects, Wind energy, Multimode fibers, Optical fibers, Data transmission, Temperature metrology, Data centers

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Proceedings Article | 27 February 2014 Paper

Paper

Energy efficiency, bit rate, and modal properties of 980 nm VCSELs for very-short-reach optical interconnects

Hui Li, Philip Moser, Philip Wolf, Gunter Larisch, Leszek Frasunkiewicz, Maciej Dems, Tomasz Czyszanowski, James Lott, Dieter Bimberg

Proceedings Volume 9001, 90010B (2014) https://doi.org/10.1117/12.2045780

KEYWORDS: Vertical cavity surface emitting lasers, Oxides, Energy efficiency, Optical interconnects, Data transmission, Quantum wells, Temperature metrology, Gallium arsenide, Refractive index

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Proceedings Article | 13 March 2013 Paper

Paper

Impact of the aperture diameter on the energy efficiency of oxide-confined 850 nm high speed VCSELs

Philip Moser, James Lott, Philip Wolf, Gunter Larisch, Hui Li, Nikolay Ledentsov, Dieter Bimberg

Proceedings Volume 8639, 86390V (2013) https://doi.org/10.1117/12.2002446

KEYWORDS: Vertical cavity surface emitting lasers, Oxides, Modulation, Quantum efficiency, Energy efficiency, Data transmission, Resistance, Optical interconnects, Quantum information, Computing systems

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Proceedings Article | 29 November 2012 Paper

Paper

VCSELs for exascale computing, computer farms, and green photonics

Werner Hofmann, Philip Moser, Philip Wolf, Gunter Larisch, Hui Li, Wei Li, James Lott, Dieter Bimberg

Proceedings Volume 8552, 855205 (2012) https://doi.org/10.1117/12.2006273

KEYWORDS: Vertical cavity surface emitting lasers, Optical interconnects, Data centers, Energy efficiency, Semiconductor lasers, Computing systems, Computer security, Photonics, Metals, Data communications

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The bandwidth-induced communication bottleneck due to the intrinsic limitations of metal interconnects is inhibiting the performance and environmental friendliness of today´s supercomputers, data centers, and in fact all other modern electrically interconnected and interoperable networks such as data farms and "cloud" fabrics. The same is true for systems of optical interconnects (OIs), where even when the metal interconnects are replaced with OIs the systems remain limited by bandwidth, physical size, and most critically the power consumption and lifecycle operating costs. Vertical-cavity surface-emitting lasers (VCSELs) are ideally suited to solve this dilemma. Global communication providers like Google Inc., Intel Inc., HP Inc., and IBM Inc. are now producing optical interconnects based on VCSELs. The optimal bandwidth per link may be analyzed by by using Amdahl´s Law and depends on the architecture of the data center and the performance of the servers within the data center. According to Google Inc., a bandwidth of 40 Gb/s has to be accommodated in the future. IBM Inc. demands 80 Tbps interconnects between solitary server chips in 2020. We recently realized ultrahigh bit rate VCSELs up to 49 Gb/s suited for such optical interconnects emitting at 980 nm. These devices show error-free transmission at temperatures up to 155°C and operate beyond 200°C. Single channel data-rates of 40 Gb/s were achieved up to 75°C. Record high energy efficiencies close to 50 fJ/bit were demonstrated for VCSELs emitting at 850 nm. Our devices are fabricated using a full three-inch wafer process, and the apertures were formed by in-situ controlled selective wet oxidation using stainless steel-based vacuum equipment of our own design. assembly, and operation. All device data are measured, recorded, and evaluated by our proprietary fully automated wafer mapping probe station. The bandwidth density of our present devices is expected to be scalable from about 100 Gbps/mm² to a physical limit of roughly 15 Tbps/mm² based on the current 12.5 Gb/s VCSEL technology. Still more energy-efficient and smaller volume laser diode devices dissipating less heat are mandatory for further up scaling of the bandwidth. Novel metal-clad VCSELs enable a reduction of the device's footprint for potentially ultrashort range interconnects by 1 to 2 orders of magnitude compared to conventional VCSELs thus enabling a similar increase of device density and bandwidth.

Proceedings Article | 9 May 2012 Paper

Paper

High-speed VCSELs for energy efficient computer interconnects

Philip Moser, Philip Wolf, James Lott, Gunter Larisch, Alexey Payusov, Alex Mutig, Waldemar Unrau, Nikolay Ledentsov, Werner Hofmann, Dieter Bimberg

Proceedings Volume 8432, 843202 (2012) https://doi.org/10.1117/12.923054

KEYWORDS: Vertical cavity surface emitting lasers, Optical interconnects, Modulation, Multimode fibers, Optical fibers, Temperature metrology, Data transmission, Data centers, Binary data, Standards development

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Proceedings Article | 7 February 2012 Paper

Paper

Energy-efficient vertical-cavity surface-emitting lasers (VCSELs) for "green" data and computer communication

Philip Moser, James Lott, Philip Wolf, Gunter Larisch, Alexey Payusov, Gerrit Fiol, Nikolay Ledentsov, Werner Hofmann, Dieter Bimberg

Proceedings Volume 8276, 82760J (2012) https://doi.org/10.1117/12.906856

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Data transmission, Multimode fibers, Optical fibers, Data communications, Optical interconnects, Temperature metrology, Energy efficiency, Semiconducting wafers

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Proceedings Article | 7 February 2012 Paper

Paper

980-nm VCSELs for optical interconnects at bandwidths beyond 40 Gb/s

W. Hofmann, P. Moser, P. Wolf, G. Larisch, W. Unrau, D. Bimberg

Proceedings Volume 8276, 827605 (2012) https://doi.org/10.1117/12.908466

KEYWORDS: Vertical cavity surface emitting lasers, Optical interconnects, Modulation, Receivers, Mirrors, Binary data, Semiconducting wafers, Photonics, Gallium arsenide, Temperature metrology

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Proceedings Article | 7 February 2012 Paper

Paper

Progress on single mode VCSELs for data- and tele-communications

Nikolay Ledentsov, James Lott, Jörg-R. Kropp, Vitaly Shchukin, Dieter Bimberg, Philip Moser, Gerrit Fiol, Alexey Payusov, Denis Molin, Gerard Kuyt, Adrian Amezcua, Leonid Karachinsky, Sergey Blokhin, Innokenty Novikov, Nikolay Maleev, Christoph Caspar, Ronald Freund

Proceedings Volume 8276, 82760K (2012) https://doi.org/10.1117/12.902643

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Data transmission, Multimode fibers, Reliability, Standards development, Temperature metrology, Optical interconnects, Data communications, Oxides

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Proceedings Article | 2 February 2012 Paper

Paper

Nanophotonics for datacom and telecom applications

D. Bimberg, D. Arsenijevic, H. Schmeckebier, C. Meuer, G. Fiol, G. Eisenstein

Proceedings Volume 8265, 82650E (2012) https://doi.org/10.1117/12.911487

KEYWORDS: Mode locking, Semiconductor optical amplifiers, Microwave radiation, Quantum wells, Quantum dots, Modulation, Semiconductor lasers, Picosecond phenomena, Nanophotonics, Data communications

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Proceedings Article | 28 November 2011 Paper

Paper

850 nm optical components for 25 Gb/s optical fiber data communication links over 100 m at 85°C

S. Blokhin, J. Lott, N. Ledentsov, L. Karachinsky, A. Kuzmenkov, I. Novikov, N. Maleev, G. Fiol, D. Bimberg

Proceedings Volume 8308, 830819 (2011) https://doi.org/10.1117/12.904604

KEYWORDS: Vertical cavity surface emitting lasers, Palladium, Modulation, Eye, Optical fibers, Capacitance, Oxides, Multimode fibers, Fiber optic communications, Data communications

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Proceedings Article | 28 November 2011 Paper

Paper

High-speed 850 and 980 nm VCSELs for high-performance computing applications

Alex Mutig, Philip Moser, James Lott, Philip Wolf, Werner Hofmann, Nikolay Ledentsov, Dieter Bimberg

Proceedings Volume 8308, 830818 (2011) https://doi.org/10.1117/12.903698

KEYWORDS: Vertical cavity surface emitting lasers, Optical interconnects, Data transmission, Oxides, Quantum wells, Multimode fibers, Light sources, Gallium arsenide, Binary data, Temperature metrology

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Proceedings Article | 1 March 2011 Paper

Paper

Antimony-based quantum dot memories

Dieter Bimberg, Andreas Marent, Tobias Nowozin, Andrei Schliwa

Proceedings Volume 7947, 79470L (2011) https://doi.org/10.1117/12.881232

KEYWORDS: Quantum dots, Heterojunctions, Gallium arsenide, Capacitance, Prototyping, Antimony, Silicon, Field effect transistors, Quantum wells, Semiconductors

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Proceedings Article | 8 February 2011 Paper

Paper

High-speed single-mode quantum dot and quantum well VCSELs

Nikolay Ledentsov, James Lott, Dieter Bimberg, Alex Mutig, Gerrit Fiol, Sergey Blokhin, Alexey Nadtochiy, Vitaly Shchukin, Jörg Kropp, Innokenty Novikov, Leonid Karachinsky, Mikhail Maximov

Proceedings Volume 7952, 79520J (2011) https://doi.org/10.1117/12.880404

KEYWORDS: Vertical cavity surface emitting lasers, Quantum wells, Quantum dots, Eye, Modulation, Optical fibers, Multimode fibers, Oxides, Receivers, Luminescence

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Proceedings Article | 8 February 2011 Paper

Paper

High-speed highly temperature stable 980 nm VCSELs operating at 25 Gb/s at up to 85 °C for short reach optical interconnects

Alex Mutig, James Lott, Sergey Blokhin, Philip Moser, Philip Wolf, Werner Hofmann, Alexey Nadtochiy, Dieter Bimberg

Proceedings Volume 7952, 79520H (2011) https://doi.org/10.1117/12.876156

KEYWORDS: Vertical cavity surface emitting lasers, Oxides, Modulation, Temperature metrology, Optical interconnects, Quantum wells, Laser stabilization, Signal processing, Eye, Data transmission

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Proceedings Article | 28 April 2010 Paper

Paper

Polarization properties and instabilities of QD VCSELs

Lukasz Olejniczak, Marc Sciamanna, Hugo Thienpont, Krassimir Panajotov, Alex Mutig, Friedhelm Hopfer, Dieter Bimberg

Proceedings Volume 7720, 77201G (2010) https://doi.org/10.1117/12.854459

KEYWORDS: Polarization, Vertical cavity surface emitting lasers, Switching, Quantum wells, Polarizers, Modulation, Semiconducting wafers, Switches, Quantum dots, Anisotropy

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Proceedings Article | 28 April 2010 Paper

Paper

Oxide confined 850-nm VCSELs for high-speed datacom applications

Philip Moser, Alex Mutig, James Lott, Sergey Blokhin, Gerrit Fiol, Alexey Nadtochiy, Nikolai Ledentsov, Dieter Bimberg

Proceedings Volume 7720, 77201W (2010) https://doi.org/10.1117/12.854276

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Data communications, Oxides, Reliability, Eye, Data transmission, Picosecond phenomena, Photodetectors, Signal to noise ratio

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Proceedings Article | 28 April 2010 Paper

Paper

Locking characteristics of a 40-GHz hybrid mode-locked monolithic quantum dot laser

A. Vladimirov, M. Wolfrum, G. Fiol, D. Arsenijevic, D. Bimberg, E. Viktorov, P. Mandel, D. Rachinskii

Proceedings Volume 7720, 77200Y (2010) https://doi.org/10.1117/12.853826

KEYWORDS: Mode locking, Quantum dot lasers, Semiconductor lasers, Optical filters, Current controlled current source, Seaborgium, Signal attenuation, Modulation, Numerical analysis, Quantum dots

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Proceedings Article | 28 April 2010 Paper

Paper

40-GHz and 160-GHz mode-locked quantum-dot laser showing pulse width of 750 fs at 1.3 µm

H. Schmeckebier, G. Fiol, C. Meuer, D. Arsenijević, D. Bimberg

Proceedings Volume 7720, 772010 (2010) https://doi.org/10.1117/12.854405

KEYWORDS: Seaborgium, Mode locking, Temperature metrology, Picosecond phenomena, Pulsed laser operation, Absorption, Eye, Second-harmonic generation, Femtosecond phenomena, Data transmission

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Proceedings Article | 27 April 2010 Paper

Paper

High-speed 850-nm VCSELs for 40-Gb/s transmission

Johan Gustavsson, Petter Westbergh, Krzysztof Szczerba, Åsa Haglund, Anders Larsson, Magnus Karlsson, Peter Andrekson, Friedhelm Hopfer, Gerrit Fiol, Dieter Bimberg, Bengt-Erik Olsson, A. Kristiansson, Sorcha Healy, Eoin O'Reilly, Andrew Joel

Proceedings Volume 7720, 772002 (2010) https://doi.org/10.1117/12.854516

KEYWORDS: Vertical cavity surface emitting lasers, Oxides, Modulation, Capacitance, Resistance, Etching, Quantum wells, Mirrors, Curium, Temperature metrology

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Proceedings Article | 26 February 2010 Paper

Paper

Modeling of photonic-crystal-based high-power high-brightness semiconductor lasers

Vitaly Shchukin, Nikolai Ledentsov, Vladimir Kalosha, Thorsten Kettler, Kristijan Posilovic, Daniel Seidlitz, Dieter Bimberg, Nikita Yu. Gordeev, Leonid Ya. Karachinsky, Innokenty Novikov, Yuri Shernyakov, Alena Chunareva, Mikhail Maximov

Proceedings Volume 7597, 75971A (2010) https://doi.org/10.1117/12.847040

KEYWORDS: Waveguides, Semiconductor lasers, Photonic crystals, Active optics, Cladding, Near field, Near field optics, High power lasers, Crystals, Phase matching

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Proceedings Article | 26 February 2010 Paper

Paper

Optical components for very short reach applications at 40 Gb/s and beyond

Nikolay Ledentsov, James Lott, Vitaly Shchukin, Dieter Bimberg, Alex Mutig, Tim Germann, Jörg-R. Kropp, Leonid Karachinsky, Sergey Blokhin, Alexey Nadtochiy

Proceedings Volume 7597, 75971F (2010) https://doi.org/10.1117/12.847330

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Integrated circuits, Oxides, Optical components, Standards development, Reliability, Electroluminescence, Image processing, Copper

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Proceedings Article | 24 February 2010 Paper

Paper

Quantum dots for single and entangled photon emitters

D. Bimberg, E. Stock, A. Lochmann, A. Schliwa, W. Unrau, M. Münnix, S. Rodt, A. Toropov, A. Bakarov, A. Kalagin, V. Haisler

Proceedings Volume 7610, 76100G (2010) https://doi.org/10.1117/12.846782

KEYWORDS: Excitons, Quantum dots, Luminescence, Gallium arsenide, Photon polarization, Indium arsenide, Oxides, Light emitting diodes, Polarization, Picosecond phenomena

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Proceedings Article | 12 February 2010 Paper

Paper

High-power high-brightness semiconductor lasers based on novel waveguide concepts

Dieter Bimberg, Kristijan Posilovic, Vladimir Kalosha, Thorsten Kettler, Daniel Seidlitz, Vitaly Shchukin, Nikolay Ledentsov, Nikita Gordeev, Leonid Karachinsky, Innokenty Novikov, Mikhail Maximov, Yuri Shernyakov, Alena Chunareva, Frank Bugge, Markus Weyers

Proceedings Volume 7616, 76161I (2010) https://doi.org/10.1117/12.846577

KEYWORDS: Waveguides, Refractive index, Semiconductor lasers, Continuous wave operation, Photonic crystals, Waveguide lasers, Cladding, High power lasers, Laser crystals

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Proceedings Article | 6 February 2010 Paper

Paper

High-speed 850 nm oxide-confined VCSELs for DATACOM applications

Alex Mutig, Sergey Blokhin, Alexey Nadtochiy, Gerrit Fiol, James Lott, Vitaly Shchukin, Nikolai Ledenstov, Dieter Bimberg

Proceedings Volume 7615, 76150N (2010) https://doi.org/10.1117/12.840950

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Signal to noise ratio, Eye, Data communications, Oxides, Resistance, Computing systems, Optical fibers, Reliability

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Proceedings Article | 20 May 2009 Paper

Paper

Cavity-enhanced emission in electrically driven quantum dot single-photon-emitters

A. Lochmann, E. Stock, M. Münnix, J. Töfflinger, W. Unrau, D. Bimberg, A. Toropov, A. Bakarov, V. Haisler

Proceedings Volume 7366, 736604 (2009) https://doi.org/10.1117/12.822769

KEYWORDS: Excitons, Single photon, Oxides, Quantum dots, Electromagnetism, Photon polarization, Indium arsenide, Modeling, Light emitting diodes, Polarization

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Proceedings Article | 24 February 2009 Paper

Paper

20 Gbit/s error free transmission with ~850 nm GaAs-based vertical cavity surface emitting lasers (VCSELs) containing InAs-GaAs submonolayer quantum dot insertions

J. Lott, V. Shchukin, N. Ledentsov, A. Stinz, F. Hopfer, A. Mutig, G. Fiol, D. Bimberg, S. Blokhin, L. Karachinsky, I. Novikov, M. Maximov, N. Zakharov, P. Werner

Proceedings Volume 7211, 721114 (2009) https://doi.org/10.1117/12.816947

KEYWORDS: Vertical cavity surface emitting lasers, Semiconducting wafers, Quantum wells, Indium arsenide, Gallium arsenide, Quantum dots, Optical microcavities, Telecommunications, Modulation, Indium gallium arsenide

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Proceedings Article | 24 February 2009 Paper

Paper

Ultra high-speed nanophotonics

D. Bimberg, G. Fiol, C. Meuer, D. Arsenijevic, J. Kim, S. Liebich, M. Laemmlin, M. Kuntz, H. Schmeckebier, G. Eisenstein

Proceedings Volume 7211, 721117 (2009) https://doi.org/10.1117/12.810880

KEYWORDS: Mode locking, Picosecond phenomena, Modulation, Quantum wells, Semiconductor lasers, Ultrafast phenomena, Hole burning spectroscopy, Quantum dots, Semiconductor optical amplifiers, Nanophotonics

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Proceedings Article | 18 February 2009 Paper

Paper

Quantum dot insertions in VCSELs from 840 to 1300 nm: growth, characterization, and device performance

N. Ledentsov, J. Lott, V. Shchukin, H. Quast, F. Hopfer, G. Fiol, A. Mutig, P. Moser, T. Germann, A. Strittmatter, L. Karachinsky, S. Blokhin, I. Novikov, A. Nadtochi, N. Zakharov, P. Werner, D. Bimberg

Proceedings Volume 7224, 72240P (2009) https://doi.org/10.1117/12.810192

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Indium arsenide, Eye, Quantum dots, Transmission electron microscopy, Frequency conversion, Multimode fibers, Copper

Read Abstract +

Proceedings Article | 7 February 2009 Paper

Paper

120°C 20 Gbit/s operation of 980nm VCSEL based on sub-monolayer growth

Friedhelm Hopfer, Alex Mutig, Gerrit Fiol, Phillip Moser, Dejan Arsenijevic, Vitaly Shchukin, Nikolai Ledentsov, Sergey Mikhrin, Igor Krestnikov, Daniel Livshits, Alexey Kovsh, Matthias Kuntz, Dieter Bimberg

Proceedings Volume 7229, 72290C (2009) https://doi.org/10.1117/12.813064

KEYWORDS: Modulation, Vertical cavity surface emitting lasers, Temperature metrology, Indium gallium arsenide, Resistance, Semiconductor lasers, Quantum wells, Oxides, Detection theory, Signal analysis

Read Abstract +

Proceedings Article | 18 November 2008 Paper

Paper

Tilted cavity concept for the high-power wavelength stabilized diode lasers

L. Ya. Karachinsky, I. Novikov, G. Fiol, M. Kuntz, Yu. Shernyakov, N. Yu. Gordeev, M. Maximov, M. Lifshits, T. Kettler, K. Posilovic, V. Shchukin, N. Ledentsov, S. Mikhrin, D. Bimberg

Proceedings Volume 7138, 713804 (2008) https://doi.org/10.1117/12.817968

KEYWORDS: Pulsed laser operation, Semiconductor lasers, Continuous wave operation, Modulation, High power lasers, Reflectivity, Laser stabilization, Vertical cavity surface emitting lasers, Gallium arsenide, Temperature metrology

Read Abstract +

Proceedings Article | 5 March 2008 Paper

Paper

Quantum dot photonics: edge emitter amplifier, and VCSEL

F. Hopfer, M. Kuntz, M. Lämmlin, G. Fiol, N. Ledentsov, A. Kovsh, S. Mikrin, I. Kaiander, V. Haisler, A. Lochmann, A. Mutig, C. Schubert, A. Umbach, V. Ustinov, U. Pohl, D. Bimberg

Proceedings Volume 7009, 700902 (2008) https://doi.org/10.1117/12.793286

KEYWORDS: Vertical cavity surface emitting lasers, Picosecond phenomena, Modulation, Quantum dots, Mode locking, Semiconductor lasers, Pulsed laser operation, Indium gallium arsenide, Eye

Read Abstract +

Proceedings Article | 22 February 2008 Paper

Paper

Ultra high-speed electro-optically modulated VCSELs: modeling and experimental results

V. Shchukin, N. Ledentsov, J. Lott, H. Quast, F. Hopfer, L. Ya. Karachinsky, M. Kuntz, P. Moser, A. Mutig, A. Strittmatter, V. Kalosha, D. Bimberg

Proceedings Volume 6889, 68890H (2008) https://doi.org/10.1117/12.784371

KEYWORDS: Vertical cavity surface emitting lasers, Modulators, Absorption, Modulation, Electro optics, Quantum wells, Reflectivity, Excitons, Refractive index, Mirrors

Read Abstract +

Proceedings Article | 22 February 2008 Paper

Paper

High-power one-, two-, and three-dimensional photonic crystal edge-emitting laser diodes for ultra-high brightness applications

N. Yu. Gordeev, M. Maximov, Y. Shernyakov, I. Novikov, L. Ya. Karachinsky, V. Shchukin, T. Kettler, K. Posilovic, N. Ledentsov, D. Bimberg, R. Duboc, A. Sharon, D. Arbiv, U. Ben-Ami

Proceedings Volume 6889, 68890W (2008) https://doi.org/10.1117/12.784402

KEYWORDS: Waveguides, Semiconductor lasers, Photonic crystals, Near field optics, Refractive index, Continuous wave operation, Pulsed laser operation, High power lasers, Laser applications, Laser crystals

Read Abstract +

Proceedings Article | 8 February 2007 Paper

Paper

High-frequency nanophotonic devices

D. Bimberg, G. Fiol, C. Meuer, M. Laemmlin, M. Kuntz

Proceedings Volume 6485, 64850X (2007) https://doi.org/10.1117/12.714215

KEYWORDS: Mode locking, Picosecond phenomena, Quantum dots, Polarization, Optical amplifiers, Modulation, Pulsed laser operation, Ultrafast phenomena, Semiconductor lasers, Waveguides

Read Abstract +

Proceedings Article | 7 February 2007 Paper

Paper

Novel concepts for ultrahigh-speed quantum-dot VCSELs and edge-emitters

N. Ledentsov, F. Hopfer, A. Mutig, V. Shchukin, A. V. Savel'ev, G. Fiol, M. Kuntz, V. A. Haisler, T. Warming, E. Stock, S. S. Mikhrin, A. R. Kovsh, C. Bornholdt, H. Eisele, M. Dähne, N. D. Zakharov, P. Werner, D. Bimberg

Proceedings Volume 6468, 64681O (2007) https://doi.org/10.1117/12.717248

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Modulators, Refractive index, Electro optics, Indium arsenide, Gallium arsenide, Transmission electron microscopy, Continuous wave operation

Read Abstract +

Proceedings Article | 12 July 2006 Paper

Paper

High brilliance photonic band crystal lasers

V. Shchukin, N. Ledentsov, N. Gordeev, L. Karachinsky, N. Kryzhanovskaya, S. Kuznetsov, M. Lifshits, M. Maximov, I. Novikov, Yu. Shernyakov, T. Kettler, K. Posilovic, D. Bimberg

Proceedings Volume 6350, 635005 (2006) https://doi.org/10.1117/12.693348

KEYWORDS: Photonic crystals, Laser crystals, Waveguides, Semiconductor lasers, Refractive index, Crystals, Reflectivity, High power lasers, Gallium arsenide, Near field optics

Read Abstract +

Proceedings Article | 6 July 2006 Paper

Paper

20-Gb/s direct modulation of 980 nm VCSELs based on submonolayer deposition of quantum dots

F. Hopfer, A, Mutig, G. Fiol, M. Kuntz, S. Mikhrin, I. Krestnikov, D. Livshits, A. Kovsh, C. Bornholdt, V. Shchukin, N. Ledentsov, V. Gaysler, N. Zakharov, P. Werner, D. Bimberg

Proceedings Volume 6350, 635003 (2006) https://doi.org/10.1117/12.693006

KEYWORDS: Modulation, Vertical cavity surface emitting lasers, Quantum dots, Indium arsenide, Gallium arsenide, Eye, Indium gallium arsenide, Quantum wells, Transmission electron microscopy, Gallium

Read Abstract +

Proceedings Article | 6 July 2006 Paper

Paper

Electrically pumped InAs single quantum dot emitter

A. Lochmann, E. Stock, O. Schulz, F. Hopfer, D. Bimberg, V. Haisler, A. Toropov, A. Bakarov, A. Kalagin, M. Scholz, S. Büttner, O. Benson

Proceedings Volume 6350, 63500F (2006) https://doi.org/10.1117/12.692764

KEYWORDS: Excitons, Indium arsenide, Oxides, Quantum dots, Single photon, Aluminum, Photons, Electroluminescence, Gallium arsenide, Oxidation

Read Abstract +

Proceedings Article | 6 July 2006 Paper

Paper

Self organized quantum dots for 1.3 µm photonic devices

M. Laemmlin, G. Fiol, C. Meuer, M. Kuntz, F. Hopfer, N. Ledentsov, A. Kovsh, D. Bimberg

Proceedings Volume 6350, 63500M (2006) https://doi.org/10.1117/12.692912

KEYWORDS: Mode locking, Quantum dots, Modulation, Picosecond phenomena, Optical amplifiers, Semiconductor lasers, Pulsed laser operation, Eye, Laser optics, Ultrafast phenomena

Read Abstract +

Proceedings Article | 28 February 2006 Paper

Paper

Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence

M. Maximov, Yu. Shernyakov, I. Novikov, S. Kuznetsov, L. Ya. Karachinsky, N. Yu. Gordeev, I. Soshnikov, Yu. Musikhin, N. Kryzhanovskaya, A. Sharon, U. Ben-Ami, V. Kalosha, N. Zakharov, P. Werner, T. Kettler, K. Posilovic, V. Shchukin, N. Ledentsov, D. Bimberg

Proceedings Volume 6115, 611513 (2006) https://doi.org/10.1117/12.661389

KEYWORDS: Waveguides, Photonic crystals, Semiconductor lasers, Refractive index, Crystals, Laser crystals, Light emitting diodes, Geometrical optics, Near field optics, Cladding

Read Abstract +

Proceedings Article | 22 February 2006 Paper

Paper

1.3-1.5 µm quantum dot lasers on foreign substrates: growth using defect reduction technique, high-power CW operation, and degradation resistance

N. Ledentsov, A. Kovsh, V. Shchukin, S. Mikhrin, I. Krestnikov, A. Kozhukhov, L. Karachinsky, M. Maximov, I. Novikov, Yu. Shernyakov, I. Soshnikov, A. Zhukov, Yu. Musikhin, V. Ustinov, N. Zakharov, P. Werner, T. Kettler, K. Posilovic, D. Bimberg, M. Hu, H. Nguyen, K. Song, Chung-en Zah

Proceedings Volume 6133, 61330S (2006) https://doi.org/10.1117/12.641483

KEYWORDS: Gallium arsenide, Continuous wave operation, Semiconductor lasers, Quantum wells, Quantum dots, Indium arsenide, Indium gallium arsenide, Laser stabilization, High power lasers

Read Abstract +

We have performed a systematic study of structural and optical properties of Quantum dot (QDs) lasers based on InAs/InGaAs quantum dots grown on GaAs substrates emitting in the 1.3 - 1.5 μm range. 1.3 μm range QD lasers are grown using GaAs as matrix material. It is shown that the lasers, grown with large number of QD stacks are metamorphic, with plastic relaxation occurring through the formation of misfit dislocations. Thus, 1.3 μm QD lasers with large number of stacks grown without strain compensation are metamorphic. Another type of defects is related to local dislocated clusters, which are the most dangerous. When proper optimization of the growth conditions is carried out, including a selective thermal etching off of statistically formed dislocated clusters through the defect-reduction technique (DRT), no significant impact of misfit dislocations on the degradation robustness is observed. In uncoated devices a high cw single mode power of ~700 mW is realized limited by thermal roll-over, which is not affected by 500 h ageing at room temperature. At elevated temperatures the main degradation mechanism revealed is catastrophic optical mirror damage (COMD). When the facet are passivated, the devices show the extrapolated operation lifetime in excess of 10⁶ h at 40°C at ~100 mW cw single mode output power. Longer wavelength (1.4 - 1.5 μm) devices are grown on metamorphic (In,Ga,Al)As layers deposited on GaAs substrates. In this case, the plastic relaxation occurs through formation of both misfit and threading dislocations. The latter kill the device performance. Using DRT in this case enables blocking of threading dislocation with growth of QDs in defect-free upper layers. DRT is realized by selective capping of the defect-free areas and high-temperature etching of nano-holes at the non-capped regions near the dislocation. The procedure results in etching of holes and is followed by fast lateral overgrowth with merger of the growth fronts. If the defect does not propagate into the upper layer when the hole is capped, the upper layers become defect-free. Lasers based on this approach exhibited emission wavelength in the 1.4 -1.5 μm range with a differential quantum efficiency of about ~50%. The narrow-stripe lasers operate in a single transverse mode and withstand continuous current density above 20 kA cm^-2 without degradation. A maximum continuous-wave output power of 220 mW limited by thermal roll-over is obtained. No beam filamentation was observed up to the highest pumping levels. Narrow stripe devices with as-cleaved facets are tested for 60°C (800 h) and 70°C (200 h) on-chip temperature. No noticeable degradation has been observed at 50 mW cw single mode output power. This shows the possibility of degradation-robust devices on foreign substrates. The technology opens a way for integration of various III-V materials and may target degradation-free lasers on silicon for further convergence of computing and communications.

Proceedings Article | 31 January 2005 Paper

Paper

QD lasers: physics and applications

Nikolai Ledentsov, Alexey Kovsh, Vitaly Shchukin, Sergey Mikhrin, Igor Krestnikov, A. Kozhukhov, Leonid Karachinsky, Mikhail Maximov, Innokenty Novikov, Yuri Shernyakov, Ilja Soshnikov, Alexey Zhukov, Efim Portnoi, Victor Ustinov, D. Gerthsen, Pallab Bhattacharya, N. Zakharov, P. Werner, Friedhelm Hopfer, Matthias Kuntz, Dieter Bimberg

Proceedings Volume 5624, (2005) https://doi.org/10.1117/12.570284

KEYWORDS: Gallium arsenide, Semiconductor lasers, Vertical cavity surface emitting lasers, Indium arsenide, Annealing, Quantum dots, Laser stabilization, Transmission electron microscopy, Heterojunctions, Indium gallium arsenide

Read Abstract +

Proceedings Article | 1 September 2004 Paper

Paper

Mode locking of InGaAs quantum dot lasers

Mark Thompson, Kay Tan, Claudio Marinelli, Kevin Williams, Roman Sellin, Richard Penty, Ian White, Matthias Kuntz, Dongxun Ouyang, Ilia Kaiander, Nikolai Ledentsov, Dieter Bimberg, Victor Ustinov, Alexey Zhukov, Alexey Kovsh, Franz Visinka, Stephan Jochum, Stephan Hansmann, Dae-Joon Kang, Mark Blamire

Proceedings Volume 5452, (2004) https://doi.org/10.1117/12.545749

KEYWORDS: Mode locking, Oscilloscopes, Pulsed laser operation, Semiconductor lasers, Etching, Gallium, Quantum dot lasers, Quantum dots, Waveguides, Fourier transforms

Read Abstract +

Proceedings Article | 1 September 2004 Paper

Paper

Damping and feedback characteristics of quantum dot semiconductor lasers

Guillaume Huyet, Stephen Hegarty, David O'Brien, Alexander Uskov, S. Melnik, Olwen Carroll, John McInerney, Thorsten Kettler, Matthias Laemmlin, Dieter Bimberg, Victor Ustinov, Sergey Mikhrin, Alexey Zhukov, Alexey Kovsh

Proceedings Volume 5452, (2004) https://doi.org/10.1117/12.545457

KEYWORDS: Semiconductor lasers, Quantum dots, Laser optics, Quantum wells, Microwave radiation, Measurement devices, Laser stabilization, Calcium, Optical isolators, Quantum dot lasers

Read Abstract +

Proceedings Article | 2 August 2004 Paper

Paper

Strong coupling between quantum dot and electromagnetic field: local field effects

Gregory Slepyan, Andrei Magyarov, Sergey Maksimenko, Alex Hoffmann, Dieter Bimberg

Proceedings Volume 5509, (2004) https://doi.org/10.1117/12.555830

KEYWORDS: Electromagnetism, Quantum dots, Gaussian pulse, Polarization, Excitons, Electron holes, Semiconductors, Chemical species, Spherical lenses, Particles

Read Abstract +

Proceedings Article | 18 June 2004 Paper

Paper

Long-wavelength (1.3-1.5 micron) quantum dot lasers based on GaAs

Alexey Kovsh, Nikolai Ledentsov, Sergei Mikhrin, Alexey Zhukov, Daniil Livshits, Nikolay Maleev, Mikhail Maximov, Victor Ustinov, Alexey Gubenko, Igor Gadjiev, Efim Portnoi, Jyh Shyang Wang, Jim Chi, Donald Ouyang, Dieter Bimberg, James Lott

Proceedings Volume 5349, (2004) https://doi.org/10.1117/12.531245

KEYWORDS: Semiconductor lasers, Gallium arsenide, Vertical cavity surface emitting lasers, Quantum wells, Continuous wave operation, Diodes, Mode locking, Gallium, Laser damage threshold, Laser applications

Read Abstract +

Proceedings Article | 14 June 2004 Paper

Paper

Dephasing processes in InGaAs quantum dots and quantum-dot molecules

Paola Borri, Wolfgang Langbein, S. Schneider, Ulrike Woggon, Markus Schwab, Manfred Bayer, Roman Sellin, Dongxun Ouyang, Dieter Bimberg, S. Fafard, Zbigniew Wasilewski, Pawel Hawrylak

Proceedings Volume 5361, (2004) https://doi.org/10.1117/12.531544

KEYWORDS: Excitons, Quantum dots, Phonons, Molecules, Signal detection, Indium gallium arsenide, Picosecond phenomena, Temperature metrology, Polarization, Acoustics

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Proceedings Article | 14 June 2004 Paper

Paper

Reduced sensitivity to external feedback in quantum dot lasers

Guillaume Huyet, David O'Brien, Stephen Hegarty, John McInerney, Dieter Bimberg, Christian Ribbat, V. Ustinov, S. Mikhrin, A. Kovsh, A. V. Uskov

Proceedings Volume 5361, (2004) https://doi.org/10.1117/12.533016

KEYWORDS: Semiconductor lasers, Quantum dots, Quantum wells, Laser optics, Quantum dot lasers, Microwave radiation, Measurement devices, Laser stabilization, Optical isolators, Waveguides

Read Abstract +

Proceedings Article | 14 June 2004 Paper

Paper

Correlation of structural and optical properties of self-organized quantum dots

Andrei Schliwa, Sven Rodt, Florian Guffarth, Konstantin Poetschke, Till Warming, Robert Seguin, Dieter Bimberg

Proceedings Volume 5361, (2004) https://doi.org/10.1117/12.531546

KEYWORDS: Excitons, Indium arsenide, Luminescence, Quantum dots, Interfaces, Optical properties, Spectroscopy, Gallium arsenide, Scanning tunneling microscopy, Metalorganic chemical vapor deposition

Read Abstract +

Proceedings Article | 11 May 2004 Paper

Paper

High-power ultra-fast single- and multi-mode quantum dot lasers with superior beam profile

Roman Sellin, Dieter Bimberg, Victor Ustinov, Nikolai Ledentsov, Ilia Kaiander, Matthias Kuntz, Matthias Lämmlin, Kay Tan, Claudio Marinelli, Mark Thompson, Adrian Wonfor, Richard Penty, Ian White, David O'Brien, Stephan Hegarty, Guillaume Huyet, John McInerney, J. Kenton White

Proceedings Volume 5365, (2004) https://doi.org/10.1117/12.528296

KEYWORDS: Quantum wells, Semiconductor lasers, Gallium arsenide, Mode locking, Waveguides, Gallium, Modulation, Laser damage threshold, Cladding, Diodes

Read Abstract +

Proceedings Article | 11 May 2004 Paper

Paper

Mode-locked quantum dot lasers for picosecond pulse generation

Mark Thompson, Kay Ti Tan, Claudio Marinelli, Kevin Williams, Roman Sellin, Richard Penty, Ian White, Matthias Kuntz, Matthias Laemmlin, Dongxun Ouyang, Ilia Kaiander, Nikolai Ledentsov, Dieter Bimberg, V. Ustinov, A. Zhukov, A. Kovsh, Franz Visinka, Stephan Jochum, Stephan Hansmann, Dae-Joon Kang, Mark Blamire

Proceedings Volume 5365, (2004) https://doi.org/10.1117/12.531284

KEYWORDS: Mode locking, Quantum dot lasers, Pulsed laser operation, Etching, Picosecond phenomena, Oscilloscopes, Semiconductor lasers, Quantum dots, Gallium, Spectrum analysis

Read Abstract +

Proceedings Article | 25 July 2003 Paper

Paper

Recent advances in long-wavelength GaAs-based quantum dot lasers

Nikolai Ledentsov, Dieter Bimberg, Roman Sellin, C. Ribbat, Victor Ustinov, Alexey Zhukov, Alexey Kovsh, Mikhail Maximov, Yuri Shernyakov

Proceedings Volume 4986, (2003) https://doi.org/10.1117/12.474390

KEYWORDS: Vertical cavity surface emitting lasers, Gallium arsenide, Quantum dots, Semiconductors, Quantum wells, Indium arsenide, Semiconductor lasers, Gallium, Quantum dot lasers

Read Abstract +

Proceedings Article | 1 July 2003 Paper

Paper

High-performance of single mode InAs/InGaAs/GaAs quantum dot lasers of 1.3-micron range

Daniil Livshits, Alexey Kovsh, Nikolay Maleev, Alexey Zhukov, Victor Ustinov, Nikolai Ledentsov, Zhores Alferov, Dieter Bimberg, Gray Lin, Jim Chi

Proceedings Volume 4999, (2003) https://doi.org/10.1117/12.479825

KEYWORDS: Laser damage threshold, Continuous wave operation, Laser applications, Gallium arsenide, Semiconductor lasers, Indium arsenide, Gallium, Indium gallium arsenide, Vertical cavity surface emitting lasers, Temperature metrology

Read Abstract +

Proceedings Article | 19 June 2003 Paper

Paper

Analysis of heat flows and their impact on the reliability of high-power diode lasers

Jens Tomm, Franz Rinner, Joseph Rogg, E. Thamm, Christian Ribbat, Roman Sellin, Dieter Bimberg

Proceedings Volume 4993, (2003) https://doi.org/10.1117/12.473277

KEYWORDS: Semiconductor lasers, High power lasers, Temperature metrology, Quantum wells, Pulsed laser operation, Continuous wave operation, Reliability, Raman spectroscopy, Waveguides, Gallium

Read Abstract +

Proceedings Article | 11 June 2003 Paper

Paper

Temperature dependence homogenous broadening and gain recovery dynamics in InGaAs quantum dots

P. Borri, Wolfgang Langbein, S. Schneider, Ulrike Woggon, Roman Sellin, Dongxun Ouyang, Dieter Bimberg

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.514297

KEYWORDS: Excitons, Quantum dots, Indium gallium arsenide, Picosecond phenomena, Phonons, Four wave mixing, Temperature metrology, Time metrology, Polarization, Spectroscopy

Read Abstract +

Proceedings Article | 11 June 2003 Paper

Paper

MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates

Nikolay Maleev, Alexey Kovsh, Alexey Zhukov, Sergei Mikhrin, A. Vasil'ev, E. Semenova, Yuri Shernyakov, E. Nikitina, N. Kryjanovskaya, D. Sizov, Ilja Soshnikov, Mikhail Maximov, N. Ledentsov, Victor Ustinov, Dieter Bimberg, Zhores Alferov

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.514327

KEYWORDS: Gallium arsenide, Laser damage threshold, Quantum dots, Heterojunctions, Epitaxy, Semiconductor lasers, Vertical cavity surface emitting lasers, Laser stabilization, Indium gallium arsenide, Information operations

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Proceedings Article | 11 June 2003 Paper

Paper

Monte Carlo simulation of self-organized quantum dot structures: crossover from kinetics to thermodynamics

M. Meixner, R. Kunert, E. Schoell, Vitaly Shchukin, Dieter Bimberg

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.510422

KEYWORDS: Monte Carlo methods, Quantum dots, Thermodynamics, Chemical species, Diffusion, Semiconductors, Process engineering, Nanostructures, Physics, Nanotechnology

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Proceedings Article | 11 June 2003 Paper

Paper

Optical memory concepts with self-organized quantum dots- material systems and energy-selective charging

C. Kapteyn, J. Ehehalt, R. Heitz, Dieter Bimberg, G. Cirlin, Victor Ustinov, N. Ledentsov

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.513858

KEYWORDS: Quantum dots, Capacitance, Spectroscopy, Absorption, Multiplexing, Spectroscopes, Optical storage, Time resolved spectroscopy, Optical multiplexing, Optical properties

Read Abstract +

Proceedings Article | 4 December 2002 Paper

Paper

Semiconductor quantum-dot lasers and amplifiers

Jorn Hvam, Paola Borri, Nikolai Ledentsov, Dieter Bimberg

Proceedings Volume 4871, (2002) https://doi.org/10.1117/12.457282

KEYWORDS: Quantum dots, Optical amplifiers, Transparency, Vertical cavity surface emitting lasers, Absorption, Semiconductors, Semiconductor lasers, Gallium arsenide, Scattering, Quantum wells

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Proceedings Article | 12 June 2002 Paper

Paper

1.3-um edge- and surface-emitting quantum dot lasers grown on GaAs substrates

Victor Ustinov, Alexey Zhukov, Nikolay Maleev, Anton Egorov, Alexey Kovsh, Sergei Mikhrin, Nikolai Cherkashin, Yuri Shernyakov, Mikhail Maximov, Anrei Tsatsul'nikov, Nikolai Ledentsov, Zhores Alferov, James Lott, Dieter Bimberg

Proceedings Volume 4646, (2002) https://doi.org/10.1117/12.470541

KEYWORDS: Quantum wells, Vertical cavity surface emitting lasers, Quantum dots, Gallium arsenide, Laser damage threshold, Indium arsenide, Solids, Continuous wave operation, Active optics, Internal quantum efficiency

Read Abstract +

Proceedings Article | 28 March 2002 Paper

Paper

Quantum wires and quantum dots on corrugated (311) surfaces: potential applications in optoelectronics

Nikolai Ledentsov, D. Litvinov, D. Gerthsen, G. Ljubas, V. Bolotov, B. Semyagin, Vitaly Shchukin, Ilja Soshnikov, Victor Ustinov, Dieter Bimberg

Proceedings Volume 4656, (2002) https://doi.org/10.1117/12.460811

KEYWORDS: Gallium arsenide, Interfaces, Superlattices, Image processing, Modulation, Laser sintering, Quantum dots, Anisotropy, Luminescence, Scanning tunneling microscopy

Read Abstract +

Proceedings Article | 30 October 2001 Paper

Paper

Mid-infrared properties of quantum dot lasers

Marius Grundmann, A. Weber, K Goede, F. Heinrichsdorff, Dieter Bimberg, Victor Ustinov, Alexey Zhukov, Nikolai Ledentsov, Petr Kop'ev, Zhores Alferov

Proceedings Volume 4598, (2001) https://doi.org/10.1117/12.447117

KEYWORDS: Absorption, Near infrared, Gallium arsenide, Picosecond phenomena, Sensors, Mid-IR, Laser damage threshold, Spectroscopy, Optical pumping, Phonons

Read Abstract +

Proceedings Article | 6 June 2001 Paper

Paper

High-power long-wavelength lasers using GaAs-based quantum dots

Nikolai Ledentsov, Victor Ustinov, Vitaly Shchukin, Dieter Bimberg, James Lott, Zhores Alferov

Proceedings Volume 4287, (2001) https://doi.org/10.1117/12.429786

KEYWORDS: Indium arsenide, Vertical cavity surface emitting lasers, Gallium arsenide, Quantum dots, Indium gallium arsenide, High power lasers, Laser applications, Transmission electron microscopy, Continuous wave operation

Read Abstract +

Proceedings Article | 9 March 2001 Paper

Paper

Generation of pico- and femtosecond-wavelength tunable optical pulses with self-seeded laser diodes

Dieter Huhse, O. Reimann, E. Boettcher, Dieter Bimberg

Proceedings Volume 4354, (2001) https://doi.org/10.1117/12.418828

KEYWORDS: Semiconductor lasers, Optical filters, Picosecond phenomena, Pulsed laser operation, Switching, Solitons, Electro optics, Optical fibers, Electro optical systems, Computer simulations

Read Abstract +

Proceedings Article | 14 July 2000 Paper

Paper

Effect of excited-state transitions on the threshold characteristics of a quantum dot laser

Levon Asryan, Marius Grundmann, Nikolai Ledentsov, Oliver Stier, Robert Suris, Dieter Bimberg

Proceedings Volume 3944, (2000) https://doi.org/10.1117/12.391491

KEYWORDS: Laser damage threshold, Americium, Indium arsenide, Gallium arsenide, Switches, Chlorine, Switching, Quantum dot lasers, Dispersion, Quantum wells

Read Abstract +

Proceedings Article | 14 July 2000 Paper

Paper

Quantum dot lasers: from promise to reality

Dieter Bimberg, Nikolai Ledentsov

Proceedings Volume 3944, (2000) https://doi.org/10.1117/12.391488

KEYWORDS: Quantum wells, Gallium arsenide, Heterojunctions, Semiconductor lasers, Indium arsenide, Vertical cavity surface emitting lasers, Laser damage threshold, Quantum dots, Crystals, Far infrared

Read Abstract +

Proceedings Article | 6 August 1999 Paper

Paper

Generation of short wavelength-tunable semiconductor laser pulses

Dieter Huhse, Christian Warmuth, Markus Schulze, Dieter Bimberg

Proceedings Volume 3625, (1999) https://doi.org/10.1117/12.356879

KEYWORDS: Semiconductor lasers, Switching, Picosecond phenomena, Optical filters, Solitons, Nonlinear filtering, Electro optical systems, Tunable lasers, Electro optics, Optical amplifiers

Proceedings Article | 22 June 1998 Paper

Paper

Measurement of resonant-mode blueshifts in quantum-dot vertical-cavity surface-emitting lasers

James Lott, Michael Noble, John Loehr, Nikolai Ledentsov, Victor Ustinov, Dieter Bimberg

Proceedings Volume 3419, 34190R (1998) https://doi.org/10.1117/12.311011

KEYWORDS: Vertical cavity surface emitting lasers, Quantum dots, Distributed Bragg reflectors, Temperature metrology, Electroluminescence, Oxides

Read Abstract +

Showing 5 of 88 publications

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Semiconductor Lasers and Laser Dynamics X

5 April 2022 | Strasbourg, France

Semiconductor Lasers and Laser Dynamics IX

6 April 2020 | Online Only, France

Semiconductor Lasers and Laser Dynamics

23 April 2018 | Strasbourg, France

Semiconductor Lasers and Laser Dynamics

4 April 2016 | Brussels, Belgium

Semiconductor Lasers and Laser Dynamics

14 April 2014 | Brussels, Belgium

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