Dr. Dong Qing Zhang Profile

Dr. Dong Qing Zhang

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Publications (11)

Proceedings Article | 22 March 2018 Paper

Massive metrology using fast e-beam technology improves OPC model accuracy by >2x at faster turnaround time

Qian Zhao, ChangAn Wang, Hong-Fei Shi, James Guerrero, Mu Feng, Jen-Shiang Wang, Kar Kit Koh, Dong Qing Zhang, Hongxin Zhang, Subramanian Krishnamurthy, Ray Fei, Chiawen Lin, Wei Fang, Fei Wang, Jazer Wang, Lei Wang, Qiang Zhang, Jiao Liang, Yunbo Guo, Chen Zhang, Tom Wallow, David Rio, Lester Wang, Alvin Wang, Keith Gronlund, Jun Lang

Proceedings Volume 10585, 105852Q (2018) https://doi.org/10.1117/12.2299971

KEYWORDS: Metrology, Data modeling, Calibration, Optical proximity correction, Scanning electron microscopy, Image processing, Time metrology, Critical dimension metrology, Semiconducting wafers, Error analysis

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Classical SEM metrology, CD-SEM, uses low data rate and extensive frame-averaging technique to achieve high-quality SEM imaging for high-precision metrology. The drawbacks include prolonged data collection time and larger photoresist shrinkage due to excess electron dosage. This paper will introduce a novel e-beam metrology system based on a high data rate, large probe current, and ultra-low noise electron optics design. At the same level of metrology precision, this high speed e-beam metrology system could significantly shorten data collection time and reduce electron dosage. In this work, the data collection speed is higher than 7,000 images per hr. Moreover, a novel large field of view (LFOV) capability at high resolution was enabled by an advanced electron deflection system design. The area coverage by LFOV is >100x larger than classical SEM. Superior metrology precision throughout the whole image has been achieved, and high quality metrology data could be extracted from full field. This new capability on metrology will further improve metrology data collection speed to support the need for large volume of metrology data from OPC model calibration of next generation technology. The shrinking EPE (Edge Placement Error) budget places more stringent requirement on OPC model accuracy, which is increasingly limited by metrology errors. In the current practice of metrology data collection and data processing to model calibration flow, CD-SEM throughput becomes a bottleneck that limits the amount of metrology measurements available for OPC model calibration, impacting pattern coverage and model accuracy especially for 2D pattern prediction. To address the trade-off in metrology sampling and model accuracy constrained by the cycle time requirement, this paper employs the high speed e-beam metrology system and a new computational software solution to take full advantage of the large volume data and significantly reduce both systematic and random metrology errors. The new computational software enables users to generate large quantity of highly accurate EP (Edge Placement) gauges and significantly improve design pattern coverage with up to 5X gain in model prediction accuracy on complex 2D patterns. Overall, this work showed >2x improvement in OPC model accuracy at a faster model turn-around time.

Proceedings Article | 16 October 2017 Paper

Automatic SRAF printing detection based on contour extraction

Liang Cao, Jie Zhang, Wenchao Jiang, Dongqing Zhang, Wei-long Wang, Jiechang Hou

Proceedings Volume 10451, 104511J (2017) https://doi.org/10.1117/12.2280186

KEYWORDS: SRAF, Printing, Image classification, Gaussian filters, Feature extraction, Image filtering, Edge detection, Semiconducting wafers, Detection and tracking algorithms, Silicon

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Proceedings Article | 18 March 2015 Paper

Sub-resolution assist feature (SRAF) printing prediction using logistic regression

Chin Boon Tan, Kar Kit Koh, Dongqing Zhang, Yee Mei Foong

Proceedings Volume 9426, 94261Y (2015) https://doi.org/10.1117/12.2085712

KEYWORDS: SRAF, Printing, Lawrencium, Optical proximity correction, Calibration, Semiconducting wafers, Binary data, Image processing, Scanning electron microscopy, Optimization (mathematics)

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Proceedings Article | 18 March 2015 Paper

Evaluation of compact models for negative-tone development layers at 20/14nm nodes

Ao Chen, Yee Mei Foong, Dong Qing Zhang, Hongxin Zhang, Angeline Chung, David Fryer, Yunfei Deng, Dmitry Medvedev, Yuri Granik

Proceedings Volume 9426, 94261P (2015) https://doi.org/10.1117/12.2085711

KEYWORDS: Data modeling, Calibration, Photomasks, Wafer-level optics, Performance modeling, Semiconducting wafers, Photoresist processing, Optical proximity correction, SRAF, 3D modeling

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Proceedings Article | 31 March 2014 Paper

Effect of mask 3D and scanner focus difference on OPC modeling and verification

Dongqing Zhang, GuoXiang Ning, Jacky Cheng, Sergey Kropinov, Lloyd Litt, Paul Ackmann, Yee Mei Foong

Proceedings Volume 9052, 905221 (2014) https://doi.org/10.1117/12.2044779

KEYWORDS: Optical proximity correction, 3D modeling, Scanners, Semiconducting wafers, Photomasks, Data modeling, 3D scanning, Binary data, Optics manufacturing, Performance modeling

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Proceedings Article | 12 April 2013 Paper

3D resist profile full chip verification and hot spot disposition

ShyueFong Quek, YeeMei Foong, DongQing Zhang, Jens Hassmann, Andre Leschok, Tang Yun, Qing Yang, Mu Feng, Stanislas Baron, JianHong Qiu, Taksh Pandey, Bo Yan, Russell Dover

Proceedings Volume 8683, 86831N (2013) https://doi.org/10.1117/12.2010595

KEYWORDS: 3D modeling, Optical proximity correction, Etching, Photoresist processing, Semiconducting wafers, Metals, 3D image processing, Scanning electron microscopy, Computer simulations, Lithography

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Proceedings Article | 12 April 2013 Paper

Introducing a novel flow to estimate challenges encountered while transitioning from RET development to manufacturable solution

Aasutosh Dave, Jacky Cheng, Omar ElSewefy, Ying Gong, Robin Chia, Pat Lacour, YeeMei Foong, GekSoon Chua, Alvin Chua, DongQing Zhang, Alex Tritchkov, Vlad Liubich

Proceedings Volume 8683, 86830K (2013) https://doi.org/10.1117/12.2013605

KEYWORDS: Resolution enhancement technologies, Optical proximity correction, Source mask optimization, SRAF, Photomasks, Optimization (mathematics), Manufacturing, Tolerancing, Semiconducting wafers, Double patterning technology

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Proceedings Article | 13 March 2012 Paper

Source mask optimization methodology (SMO) and application to real full chip optical proximity correction

Yi Zou, Stefan Roling, GekSoon Chua, YeeMei Foong, T. Yun, Byoung IL Choi, Hua-Yu Liu, Alessandra Navarra, Weijie Shi, DongQing Zhang, Russell Dover, Jianhong Qiu, Carl Babcock, Stephen Hsu, Mu Feng, Zhipan Li, Tanja Fischer, Jessy Schramm, Xiaofeng Liu, Stanislas Baron, Andre Leschok

Proceedings Volume 8326, 83261V (2012) https://doi.org/10.1117/12.916614

KEYWORDS: Source mask optimization, Optical proximity correction, Semiconducting wafers, Lithography, Electroluminescence, Scanning electron microscopy, Finite element methods, Etching, Critical dimension metrology, Image processing

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Proceedings Article | 13 March 2012 Paper

OPC model prediction capability improvements by accounting for mask 3D-EMF effects

Dong Qing Zhang, Edita Tejnil, Angeline Chung, Thuy Do, John Sturtevant, Kenneth Jantzen, Jacky Cheng, Christian Zuniga, Jessy Schramm, Yee Mei Foong

Proceedings Volume 8326, 83261R (2012) https://doi.org/10.1117/12.916863

KEYWORDS: 3D modeling, Data modeling, Photomasks, Calibration, Performance modeling, Semiconducting wafers, Optical proximity correction, Systems modeling, Panoramic photography, System on a chip

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Proceedings Article | 23 March 2011 Paper

Optimizing OPC data sampling based on "orthogonal vector space"

Antoine Bruguier, Dongqing Zhang, Liang Liu, Yuyang Sun, Byoung Il Choi, Nanshu Chen, Jianhong Qiu, Yee Mei Foong, Mu Feng, Yingfang Wang, Jacky Cheng, Stefan Hunsche, Wenjin Shao, Shaowen Gao

Proceedings Volume 7973, 79732K (2011) https://doi.org/10.1117/12.881575

KEYWORDS: Data modeling, Vector spaces, Calibration, Optical proximity correction, Semiconducting wafers, Statistical modeling, Metrology, Time metrology, Process modeling, Image analysis

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Proceedings Article | 26 March 2007 Paper

Silicon verification of flare model & application to real chip for long range proximity correction

Byoung Il Choi, Suleni Mulia, Foong Yee Mei, Jung Yu Hsieh, Yasri Yudhistira, James Word, Dongqing Zhang

Proceedings Volume 6520, 65202U (2007) https://doi.org/10.1117/12.714352

KEYWORDS: Critical dimension metrology, Optical proximity correction, Silicon, Lithography, Data modeling, Reticles, Semiconducting wafers, Control systems, Light scattering, Process control

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Showing 5 of 11 publications

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