Prof. Dong-Sing Wuu Profile

KEYWORDS: Light emitting diodes, Thin films, Aluminium gallium indium phosphide, Atomic layer deposition, Thin film devices, Resistance, Zinc oxide, Refractive index, Silicon, Silicon films

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Proceedings Article | 9 March 2015 Paper

Improved UV LED performance using transparent conductive films embedded with plasmonic structures

Shih-Hao Chuang, Cheng-Yi Lin, Sin-Liang Ou, Cheng-Sheng Tsung, Ching-Ho Chen, Dong-Sing Wuu

Proceedings Volume 9383, 93830R (2015) https://doi.org/10.1117/12.2079454

KEYWORDS: Nanoparticles, Silver, Light emitting diodes, Coating, External quantum efficiency, Electroluminescence, Transmission electron microscopy, Surface plasmons, Gallium nitride, Diffraction

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Proceedings Article | 2 May 2014 Paper

Study of surface plasmons at the metal/semiconductor interface

Ray-Hua Horng, Shih-Hao Chuang, Cheng-Sheng Tsung, Ching-Ho Chen, Cheng-Yi Lin, Feng-Yeh Chang, Dong-Sing Wuu

Proceedings Volume 9126, 91261L (2014) https://doi.org/10.1117/12.2050865

KEYWORDS: Light emitting diodes, Nanoparticles, Silver, Surface plasmons, Quantum wells, Interfaces, Metals, Internal quantum efficiency, External quantum efficiency, Electroluminescence

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Proceedings Article | 8 March 2014 Paper

The growth of hexagonal GaN-on-Si(100) using pulsed laser deposition

Kun-Ching Shen, Ming-Chien Jiang, Hsu-Hung Hsueh, Yu-Cheng Kao, Ray-Hua Horng, Dong-Sing Wuu

Proceedings Volume 8986, 89860F (2014) https://doi.org/10.1117/12.2039742

KEYWORDS: Gallium nitride, Metalorganic chemical vapor deposition, Silicon, Pulsed laser deposition, Light emitting diodes, Crystals, Plasma, Raman spectroscopy, Scanning electron microscopy, Field effect transistors

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Proceedings Article | 27 February 2014 Paper

The performance of GaN LEDs using an embedded finger-type contact

Ray-Hua Horng, Kun-Ching Shen, Chao-Yu Pai, Dong-Sing Wuu

Proceedings Volume 9003, 90030O (2014) https://doi.org/10.1117/12.2037274

KEYWORDS: Light emitting diodes, Electrodes, Gallium nitride, Copper, Sapphire, Mirrors, External quantum efficiency, Solid state lighting, Materials science, Light sources and illumination

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Proceedings Article | 4 March 2013 Paper

Enhancement in external quantum efficiency of 365 nm vertical-type ultraviolet light-emitting diodes with embedded oxide structure

Kun-Ching Shen, Min-Hao Yang, Wen-Yu Lin, Ray-Hua Horng, Dong-Sing Wuu

Proceedings Volume 8641, 864120 (2013) https://doi.org/10.1117/12.2003753

KEYWORDS: Light emitting diodes, External quantum efficiency, Gallium nitride, Oxides, Ultraviolet light emitting diodes, Sapphire, Chemical vapor deposition, Luminescence, Quantum efficiency, Silica

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Proceedings Article | 4 March 2013 Paper

Growth of high indium InGaN films using a combined deposition technique and its application for long wavelength emitter

Kun-Ching Shen, Ming-Chien Jiang, Tzu-Yu Wang, Ray-Hua Horng, Dong-Sing Wuu

Proceedings Volume 8641, 864118 (2013) https://doi.org/10.1117/12.2003725

KEYWORDS: Indium, Indium gallium nitride, Gallium nitride, Annealing, Indium nitride, Metalorganic chemical vapor deposition, Light emitting diodes, Nitrogen, Pulsed laser deposition, Luminescence

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Proceedings Article | 15 October 2012 Paper

High-yield thin GaN LED using metal bonding and laser lift-off technology

Ray-Hua Horng, Ching-Ho Chen, Wei-Cheng Kao, Dong-Sing Wuu

Proceedings Volume 8484, 84841H (2012) https://doi.org/10.1117/12.930287

KEYWORDS: Light emitting diodes, Gold, Gallium nitride, Silicon, Metals, Semiconducting wafers, Indium, Sapphire, Electroless plating, Laser liftoff

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Proceedings Article | 15 October 2012 Paper

High thermal stability of indium-rich InGaN films (33 and 60%) grown by pulsed laser deposition

Tzu-Yu Wang, Kun-Ching Shen, Dong-Sing Wuu, Sin-Liang Ou, Ray-Hua Horng

Proceedings Volume 8484, 84840V (2012) https://doi.org/10.1117/12.930355

KEYWORDS: Indium gallium nitride, Indium, Annealing, Indium nitride, Gallium nitride, Pulsed laser deposition, Luminescence, Light emitting diodes, X-ray diffraction, Visible radiation

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Proceedings Article | 1 March 2012 Paper

Growth and characterization of Ga2O3 on sapphire substrates for UV sensor applications

Dong-Sing Wuu, Sin-Liang Ou, Ray-Hua Horng, Parvaneh Ravadgar, Tzu-Yu Wang, Hsin-Ying Lee

Proceedings Volume 8263, 826317 (2012) https://doi.org/10.1117/12.908768

KEYWORDS: Photodetectors, Crystals, Deep ultraviolet, Sapphire, Diffraction, Metalorganic chemical vapor deposition, Thin films, Transmission electron microscopy, Sensors, Ultraviolet detectors

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Proceedings Article | 28 February 2012 Paper

Improved performance of 375 nm InGaN/AlGaN light-emitting diodes by incorporating a heavily Si-doped transition layer

Shih-Cheng Huang, Kun-Ching Shen, Po-Min Tu, Dong-Sing Wuu, Hao-Chung Kuo, Ray-Hua Horng

Proceedings Volume 8262, 82621L (2012) https://doi.org/10.1117/12.909580

KEYWORDS: Light emitting diodes, Ultraviolet radiation, Gallium nitride, Internal quantum efficiency, Metalorganic chemical vapor deposition, Ultraviolet light emitting diodes, Transmission electron microscopy, Luminescence, Indium gallium nitride, Quantum efficiency

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Proceedings Article | 28 February 2012 Paper

High-voltage thin GaN LEDs array

Ray-Hua Horng, Jia-Hua Lin, Dong-Sing Wuu, Re-Ching Lin, Kun-Ching Shen

Proceedings Volume 8262, 82621H (2012) https://doi.org/10.1117/12.912270

KEYWORDS: Light emitting diodes, Gallium nitride, Sapphire, Silicon, Precision processing technology, LCDs, Electrodes, Glasses, Mirrors, Polymers

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Proceedings Article | 6 February 2012 Paper

Study on GaN epilayer transferring to Cu substrate from sapphire substrate using Ga2O3 sacrificial layer

R. H. Horng, D. S. Wuu, S. L. Ou, H. H. Hsueh

Proceedings Volume 8278, 82780Y (2012) https://doi.org/10.1117/12.907177

KEYWORDS: Gallium nitride, Sapphire, Light emitting diodes, Thin films, Copper, Metalorganic chemical vapor deposition, Gallium, Chemical reactions, Crystals, Etching

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Proceedings Article | 26 September 2011 Paper

X-ray absorption fine-structure and optical studies of AlZnO nano-thin films grown on sapphire by pulsed laser deposition

Y. Lan, S.-P. Liu, C. Wei, Y.-C. Fu, Y. Wu, J. Chen, R.-H. Horng, D.-S. Wuu, Z. Feng

Proceedings Volume 8104, 81040X (2011) https://doi.org/10.1117/12.893087

KEYWORDS: Sapphire, Zinc oxide, Crystals, Raman spectroscopy, Absorption, Aluminum, Thin films, X-rays, Pulsed laser deposition, Raman scattering

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Proceedings Article | 24 September 2011 Paper

Structural and optical properties of InGaN/GaN multiple quantum well light emitting diodes grown on (1122) facet GaN/sapphire templates by metalorganic chemical vapor deposition

J.-L. Huang, L. S. Wang, Y.-S. Lai, Y.-C. Lee, Z. R. Qiu, S. Liu, D.-S. Wuu, Z. C. Feng

Proceedings Volume 8123, 81230C (2011) https://doi.org/10.1117/12.893080

KEYWORDS: Indium gallium nitride, Gallium nitride, Light emitting diodes, Luminescence, Quantum wells, Raman spectroscopy, Metalorganic chemical vapor deposition, Epitaxial lateral overgrowth, Temperature metrology, Optical properties

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Proceedings Article | 23 September 2011 Paper

Material properties of MOCVD-grown AlGaN layers influenced by indium-incorporation

T.-Y. Lin, L. Li, C. Chen, Y.-L. Chung, S. D. Yao, Y.-C. Lee, Z. Qiu, I. Ferguson, D.-S. Wuu, Z. C. Feng

Proceedings Volume 8123, 812309 (2011) https://doi.org/10.1117/12.892932

KEYWORDS: Aluminum, Raman spectroscopy, Aluminum nitride, Sapphire, Luminescence, Gallium, Backscatter, Phonons, Metalorganic chemical vapor deposition, Thin films

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Proceedings Article | 9 February 2011 Paper

Novel approaches to realizing chemical lift-off of GaN epilayer from sapphire substrate

Ray-Hua Horng, Tsung-Yen Tsai, Cheng-Ying Yen, Ming-Tsung Hung, Chun-Ting Pan, Dong-Sing Wuu

Proceedings Volume 7954, 795417 (2011) https://doi.org/10.1117/12.872570

KEYWORDS: Gallium nitride, Sapphire, Silica, Light emitting diodes, Thin films, Scanning electron microscopy, Metalorganic chemical vapor deposition, Interfaces, Etching, Reflection

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Proceedings Article | 12 March 2010 Paper

Promising composite die-bonding materials for high-power GaN-based LED applications

Ray-Hua Horng, Jhih-Sin Hong, Yu-Li Tsai, Chia-Ju Chen, Chih-Ming Chen, Dong-Sing Wuu

Proceedings Volume 7602, 76021E (2010) https://doi.org/10.1117/12.841097

KEYWORDS: Light emitting diodes, Composites, Silver, Resistance, Diamond, Copper, Gallium nitride, Chemical engineering, Indium gallium nitride, Particles

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Proceedings Article | 12 February 2010 Paper

Improved performance of near-ultraviolet InGaN/AlGaN LEDs with various insertion structures

Dong-Sing Wuu, Wen-Yu Lin, Ying-Chiuan Tsai, Shih-Cheng Huang, Ray-Hua Horng, Chien-Min Liu

Proceedings Volume 7617, 76171H (2010) https://doi.org/10.1117/12.845439

KEYWORDS: Light emitting diodes, Gallium nitride, Near ultraviolet, Crystals, Metalorganic chemical vapor deposition, Silica, Crystal optics, Transmission electron microscopy, Interfaces, Indium gallium nitride

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Proceedings Article | 15 February 2008 Paper

Highly efficient InGaN/GaN LEDs with double-sided textured surfaces and omni-directional mirror structure

Dong-Sing Wuu, Shao-Hua Huang, Ray-Hua Horng, Chuang-Yu Hsieh, Kuo-Wei Yen

Proceedings Volume 6894, 68941E (2008) https://doi.org/10.1117/12.763248

KEYWORDS: Light emitting diodes, Gallium nitride, Reflectivity, Dielectrics, Mirrors, Silicon, Sapphire, Mirror structures, Reflectors, Titanium dioxide

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Proceedings Article | 11 July 2000 Paper

Performance and reliability of wafer-bonded AlGaInP/mirror/Si light-emitting diodes

RayHua Horng, DongSing Wuu, WeiChih Peng, Man-Fang Huang, PinHui Liu, Chi-Hua Seieh, KunChuan Lin

Proceedings Volume 4078, (2000) https://doi.org/10.1117/12.392180

KEYWORDS: Light emitting diodes, Mirrors, Silicon, Wafer bonding, Metals, Reliability, Resistance, Gallium arsenide, Electroluminescence, Semiconducting wafers

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Proceedings Article | 11 July 2000 Paper

Initial growth effects on the properties of GaN buffer layer and subsequent GaN overlayer by MOCVD

DongSing Wuu, WeiHao Tseng, WeiTsung Lin, RayHua Horng

Proceedings Volume 4078, (2000) https://doi.org/10.1117/12.392109

KEYWORDS: Gallium nitride, Metalorganic chemical vapor deposition, Atomic force microscopy, Annealing, Sapphire, Mirrors, Crystals, X-rays, X-ray diffraction, Scanning electron microscopy

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Proceedings Article | 28 June 2000 Paper

Film stress and adhesion characteristics of passivation layers for thermal ink-jet print head

Yih-Shing Lee, Yi-Yung Wu, Chen-Yue Cheng, DongSing Wuu

Proceedings Volume 4080, (2000) https://doi.org/10.1117/12.389451

KEYWORDS: Tantalum, Silicon carbide, Thin films, Coating, Silicon, Absorption, FT-IR spectroscopy, Resistors, Infrared radiation, Silicon films

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Proceedings Article | 18 June 1998 Paper

Thermal ink-jet device using single-chip silicon microchannels

DongSing Wuu, Chen-Yue Cheng, RayHua Horng, G. Chan, Sao-Ling Chiu, Yi-Yung Wu

Proceedings Volume 3422, (1998) https://doi.org/10.1117/12.311102

KEYWORDS: Silicon carbide, Etching, Silicon, Inkjet technology, Microfluidics, Plasma enhanced chemical vapor deposition, Silicon films, Printing, Optical lithography, Microelectromechanical systems

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Proceedings Article | 18 June 1998 Paper

Characteristics of heater film for ink-jet printhead

Sao-Ling Chiu, DongSing Wuu, Yi-Yung Wu

Proceedings Volume 3422, (1998) https://doi.org/10.1117/12.311104

KEYWORDS: Aluminum, Thin films, Tantalum, Resistors, Resistance, Inkjet technology, Thin film devices, Printing, Semiconducting wafers, Sputter deposition

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