Dongyoung Kim
PhD Student
SPIE Involvement:
Area of Expertise:
Intermediate band solar cells , Photovoltaics , III-V quantum dots , III-V nanowires
Profile Summary

Dongyoung Kim was born in Daegu, South Korea. He received the M.Eng. degree in electronic and electrical engineering from University College London, London, U.K., in 2013, where he is currently working toward the Ph.D. degree with the Molecular Beam Epitaxy Research Group. His current research interests include III–V quantum-dot solar cells and nanowires.
Publications (3)

Proceedings Article | 23 February 2017 Presentation + Paper
Proc. SPIE. 10099, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI
KEYWORDS: Indium arsenide, External quantum efficiency, Solar cells, Gallium arsenide, Silicon, Doping, Quantum dots, Chlorine, Gallium, Molecular beam epitaxy, Absorption

Proceedings Article | 20 February 2017 Presentation + Paper
Proc. SPIE. 10114, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV
KEYWORDS: Thin films, Crystals, Gallium arsenide, Silicon, Photonic crystals, Scanning electron microscopy, Gallium, Photonic crystal devices, Arsenic, Nanowires

Proceedings Article | 15 March 2016 Paper
Proc. SPIE. 9758, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII
KEYWORDS: Photovoltaics, Visible radiation, Solar cells, Luminescence, Crystals, Silicon, Zinc, Scanning electron microscopy, Transmission electron microscopy, Structural design, Chemical elements, Gallium, Arsenic, Molecular beam epitaxy, Thin film growth, Water splitting, Nanowires

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