To handle upcoming advanced technology nodes, the spec of focus control continues to tighten to satisfy more stringent CD uniformity (CDU). In high volume manufacturing (HVM) nowadays, yield at wafer edge suffers from CDU degradation due to process variation like edge roll-off topography. Advance focus control using diffraction-based focus (DBF) was proposed as one solution; we can apply the focus compensation values, which are determined from DBF measurement. However, the confidence of the focus compensation depends on the accuracy of focus measurement, which is a widely recognized challenge in the industry. In this paper, we have investigated the performance and the accuracy of two different designs of DBF marks by collecting full maps of DBF measurements. The measurement shows different signatures cross wafer from the two designs. For focus accuracy validation, CDU maps of several focus sensitive patterns have been collected and analyzed against the defocus measurement results. Our results demonstrate that with the accuracy improved DBF design and focus correction per exposure (CPE) schematic, the CDU is improved by 20%, at the wafer edge. We find that the dimension of the DBF main pattern (W1) dominates the accuracy of focus measurement. A DBF design guideline is proposed that the main pattern dimension (W1) should be close to device focus sensitive pattern size to capture its defocus signature more effectively. The accuracy of focus measurement benefits from designs that are close to device weak point patterns, which in turn improves the overall CD uniformity.
As semiconductor technology nodes keep shrinking, ever-tightening on-product overlay (OPO) budgets coupled with continuous process development and improvement make it critical to have a robust and accurate metrology setup. Process monitoring and control is becoming increasingly important to achieve high yield production. In recently introduced advanced overlay (OVL) systems, a supercontinuum laser source is applied to facilitate the collection of overlay spectra to increase measurement stability. In this paper, an analysis methodology has been proposed to couple the measured overlay spectra with overlay simulation to extract exact process information from overlay spectra. This paper demonstrates the ability to use overlay spectra to capture and quantify process variation, which in turn can be used to calibrate the simulation stacks used to create the SCOL (scatterometry-based overlay) and AIM overlay metrology targets, and can be fed into the fab for process monitoring and improvement.
Shrinking on-product overlay (OPO) budgets in advanced technology nodes require more accurate overlay measurement and better measurement robustness to process variability. Pupil-based accuracy flags have been introduced to the scatterometry-based overlay (SCOL) system to evaluate the performance of a SCOL measurement setup. Wavelength Homing is a new robustness feature enabled by the continuous tunability of advanced SCOL systems using a supercontinuum laser light source in combination with a flexible bandpass filter. Inline process monitoring using accuracy flags allows for detection, quantification and correction of shifts in the optimal measurement wavelength. This work demonstrates the benefit of Wavelength Homing in overcoming overlay inaccuracy caused by process changes and restoring the OPO and residual levels in the original recipe.