A novel, 9XX nm fiber-coupled module using arrays of highly reliable laser diode bars has been developed. The module is capable of multi-kW output power in a beam parameter product of 80 mm-mrad. The module incorporates a hard-soldered, isolated stack package compatible with tap-water cooling. Using extensive, accelerated multi-cell life-testing, with more than ten million device hours of test, we have demonstrated a MTTF for emitters of >500,000 hrs. In addition we have qualified the module in hard-pulse on-off cycling and stringent environmental tests. Finally we have demonstrated promising results for a next generation 9xx nm chip design currently in applications and qualification testing
Optically-pumped semiconductor (OPS) lasers are power-scalable, wavelength-flexible, infrared brightness converters.
Adding intra-cavity frequency doubling turns them into efficient, low noise, high power visible laser sources. We report
on a laser combining an InGaAs gain medium with an LBO nonlinear crystal to produce more than 20 Watt CW in
single transverse mode at 532 nm. Efficient cooling of the single gain chip using advanced mounting techniques is the
key to making the laser reliable at high CW powers. A rugged and compact package withstands significant
environmental excursions. The laser's low noise makes it suitable for demanding Ti:Sapphire pumping applications.
Optically-pumped semiconductor lasers provide efficient laser sources in the ultraviolet by intra-cavity nonlinear
frequency tripling. A laser combining InGaAs gain media with LBO nonlinear crystals produces hundreds of mW CW at
355 nm. A compact package that combines thermal and opto-mechanical stability is the key to making this laser robust
and manufacturable. A temperature controlled, monolithic aluminum base supports opto-mechanical mounts made from
low expansion alloys and ceramics to create a resonator that can withstand substantial environmental excursions.
Intracavity pumping of Yb,Er:phosph ate glass with a diode-pumped Nd:Y AG laser allows efficient, tunable operation of the th ree-level Er laser in the 1530-1610 nm range. A multi longitudinal mode, 1535 nm output of more than 80 mW typically results with a 1 W, 808 nm pum p diode. Tunable, single-freq uency operation (20-80 mW) has been observed between 1533 and 1570 nm using a bi refringent tuner. The laser has also been acousto-optically Q switched to give 17 µJ pulses at 700 Hz. Further power scaling of the device will be limited by the relatively low thermal conductivi ty of the phosphate glasses.