Dr. Enrico G. Keim Profile

Dr. Enrico G. Keim

at MESA+ Institute for Nanotechnology

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 5 March 2021 Presentation + Paper

Poly-crystalline low-loss aluminium oxide waveguides

W. A. P. M. Hendriks, M. Dijkstra, I. Hegeman, F. Segerink, E. Keim, M. Dikkers, S. García-Blanco

Proceedings Volume 11689, 116890Z (2021) https://doi.org/10.1117/12.2578141

KEYWORDS: Waveguides, Oxides, Aluminum, Erbium, Ions, Doping, Crystals, Wave propagation, Thin films, Transmission electron microscopy

Read Abstract +

Luminescence quenching due to ion cluster formation in erbium ion doped amorphous aluminium oxide, limits the maximum doping concentration that can be incorporated into the material and, consequently, the maximum achievable optical gain. By controlling the reactive sputtering deposition parameters, layers with different morphologies can be deposited. In this work, we investigate low propagation loss poly-crystalline aluminium oxide thin films and the effect of erbium doping on the crystallinity. We have developed a reactive sputter process to reproducibly obtain high refractive index (n~1.72 at 633 nm) poly-crystalline thin films with very low slab waveguide losses from the near-UV to the midinfrared wavelength range. Slab waveguide losses as low as 1.8 dB/cm at 407 nm and less than 0.1 dB/cm at 1550 nm of wavelength have been experimentally characterized. Both the undoped and erbium doped layers were deposited by reactive sputter coating with, a set substrate temperature of 700 °C. Preliminary TEM analyses show no discernible change in the crystallinity of the doped layers with respect to their undoped counterparts. The high optical quality of this material, in combination with a potentially increased rare-earth ion doping concentration, could pave the way towards high-gain on-chip amplifiers in different wavelength ranges and efficient on-chip lasers.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years