Dr. Erez Graitzer Profile

Dr. Erez Graitzer

Project Manager and Sales Representative at Carl Zeiss SMS Ltd

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Publications (21)

Proceedings Article | 19 March 2015 Paper

Intra-field on-product overlay improvement by application of RegC and TWINSCAN corrections

Ofir Sharoni, Vladimir Dmitriev, Erez Graitzer, Yuval Perets, Kujan Gorhad, Richard van Haren, Hakki Cekli, Jan Mulkens

Proceedings Volume 9424, 94241K (2015) https://doi.org/10.1117/12.2085651

KEYWORDS: Photomasks, Scanners, Semiconducting wafers, Image registration, Reticles, Overlay metrology, Lithium, Distortion, Metrology, Actuators

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The on product overlay specification and Advanced Process Control (APC) is getting extremely challenging particularly after the introduction of multi-patterning applications like Spacer Assisted Double Patterning (SADP) and multipatterning techniques like N-repetitive Litho-Etch steps (LE^N, N ≥ 2). When the latter is considered, most of the intrafield overlay contributors drop out of the overlay budget. This is a direct consequence of the fact that the scanner settings (like dose, illumination settings, etc.) as well as the subsequent processing steps can be made very similar for two consecutive Litho-Etch layers. The major overlay contributor that may require additional attention is the Image Placement Error (IPE). When the inter-layer overlay is considered, controlling the intra-field overlay contribution gets more complicated. In addition to the IPE contribution, the TWINSCAN^TM lens fingerprint in combination with the exposure settings is going to play a role as well. Generally speaking, two subsequent functional layers have different exposure settings. This results in a (non-reticle) additional overlay contribution.

In this paper, we have studied the wafer overlay correction capability by RegC® in addition to the TWINSCAN^TM intrafield corrections to improve the on product overlay performance. RegC® is a reticle intra-volume laser writing technique that causes a predictable deformation element (RegC® deformation element) inside the quartz (Qz) material of a reticle. This technique enables to post-process an existing reticle to correct for instance for IPE. Alternatively, a pre-determined intra-field fingerprint can be added to the reticle such that it results in a straight field after exposure. This second application might be very powerful to correct for instance for (cold) lens fingerprints that cannot be corrected by the scanner itself. Another possible application is the intra-field processing fingerprint. One should realize that a RegC® treatment of a reticle generally results in global distortion of the reticle. This is not a problem as long as these global distortions can be corrected by the TWINSCAN^TM system (currently up to the third order). It is anticipated that the combination of the RegC® and the TWINSCAN^TMcorrections act as complementary solutions. These solutions perfectly fit into the ASML Litho InSight (LIS) product in which feedforward and feedback corrections based on YieldStar overlay measurements are used to improve the on product overlay.

Proceedings Article | 2 April 2014 Paper

Compensating process non-uniformity to improve wafer overlay by RegC

Philippe Leray, Shaunee Cheng, Avi Cohen, Erez Graitzer, Vladimir Dmitriev, Shiran Rehtan, Nadav Wertsman

Proceedings Volume 9050, 905015 (2014) https://doi.org/10.1117/12.2048081

KEYWORDS: Semiconducting wafers, Photomasks, Scanners, Overlay metrology, Process control, Optical lithography, Silica, Data modeling, Reticles, Data acquisition

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Proceedings Article | 9 September 2013 Paper

Improving wafer level CD uniformity for logic applications utilizing mask level metrology and process

Avi Cohen, Thomas Trautzsch, Ute Buttgereit, Erez Graitzer, Ori Hanuka

Proceedings Volume 8880, 888025 (2013) https://doi.org/10.1117/12.2027348

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Photomasks, Logic, Signal attenuation, Metrology, Neodymium, Polonium, Finite element methods, Control systems

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Proceedings Article | 8 November 2012 Paper

Correcting image placement errors using registration control (RegC®) technology in the photomask periphery

Avi Cohen, Falk Lange, Guy Ben-Zvi, Erez Graitzer, Dmitriev Vladimir

Proceedings Volume 8522, 85220D (2012) https://doi.org/10.1117/12.980258

KEYWORDS: Photomasks, Image registration, Scanners, Semiconducting wafers, Manufacturing, Overlay metrology, Metrology, Silica, Double patterning technology, Algorithm development

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Proceedings Article | 30 June 2012 Paper

Closed loop registration control (RegC) using PROVE as the data source for the RegC process

Erez Graitzer, Avi Cohen, Vladimir Dmitriev, Itamar Balla, Dan Avizemer, Dirk Beyer, Klaus Boehm, Wolfgang Degel

Proceedings Volume 8441, 84410A (2012) https://doi.org/10.1117/12.976632

KEYWORDS: Photomasks, Image registration, Semiconducting wafers, Overlay metrology, Pellicles, Metrology, Process control, Error analysis, Manufacturing, Scanners

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Proceedings Article | 16 April 2012 Paper

Correcting image placement errors using registration control (RegC) technology in the photomask periphery

Avi Cohen, Falk Lange, Guy Ben-Zvi, Erez Graitzer, Vladimir Dmitriev

Proceedings Volume 8352, 83520A (2012) https://doi.org/10.1117/12.919199

KEYWORDS: Photomasks, Image registration, Scanners, Manufacturing, Semiconducting wafers, Silica, Overlay metrology, Double patterning technology, Metrology, Algorithm development

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Proceedings Article | 14 October 2011 Paper

A study of closed-loop application: WLCD-CDC for 32nm and beyond reticles

Arosha Goonesekera, Ute Buttgereit, Thomas Thaler, Erez Graitzer

Proceedings Volume 8166, 816619 (2011) https://doi.org/10.1117/12.898892

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Signal attenuation, Photomasks, Logic, Scanners, Reticles, 193nm lithography, Process control, Cadmium

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Optical lithography stays at 193nm with a numerical aperture of 1.35 for several more years before moving to EUV lithography. Utilization of 193nm lithography for 32nm and beyond forces the mask maker to produce complex mask designs and tighter lithography specifications which in turn make process control more important than ever. High yield with regards to chip production requires accurate process control. Critical Dimension Uniformity (CDU) is one of the key parameters necessary to assure good performance and reliable functionality of any integrated circuit. There are different contributors which impact the total wafer CDU: mask CD uniformity, resist process, scanner and lens fingerprint, wafer topography, etc. In this study the newly developed wafer level CD metrology tool WLCD of Carl Zeiss SMS is utilized for CDU measurements in conjunction with the CDC tool from Carl Zeiss SMS which provides CD uniformity correction. The WLCD measures CD based on proven aerial imaging technology. The CDC utilizes an ultrafast femto-second laser to write intra-volume shading elements (Shade-In Elements^TM) inside the bulk material of the mask. By adjusting the density of the shading elements, the light transmission through the mask is locally changed in a manner that improves wafer CDU when the corrected mask is printed. The objective of this study is to evaluate the usage of these two tools in a closed loop process to optimize CDU of the mask before leaving the mask shop and to ensure improved intra-field CDU at wafer level. Main focus of the study is to investigate the correlation of applied attenuation by CDC and the resulting CD change, the impact of CDC process on CD linearity behavior and the correlation of WLCD data and wafer data. Logic and SRAM cells with features having designed line CD's at wafer level, ranging from 27nm to 42nm have been used for the study. The investigation provides evidence that the applied attenuation by CDC shows a linear correlation to CD change at wafer level measured with WLCD. Additionally, WLCD data shows that the CDC application does not impact the CD linearity for the tested feature range. The WLCD measurement data in turn show an excellent correlation to wafer print CD data indicating cost effective use case of closed loop WLCD/CDC application.

Proceedings Article | 20 May 2011 Paper

RegC: a new registration control process for photomasks after pattern generation

Erez Graitzer, Guy Ben-Zvi, Avi Cohen, Dmitriev Vladimir, Dan Avizemer

Proceedings Volume 8081, 80810V (2011) https://doi.org/10.1117/12.899904

KEYWORDS: Photomasks, Process control, Signal attenuation, Image registration, Double patterning technology, Scanners, Semiconducting wafers, Lithography, Algorithm development, Software development

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Proceedings Article | 2 April 2011 Paper

Mask tuning for process window improvement

Ute Buttgereit, Robert Birkner, Erez Graitzer, Avi Cohen, Benedetta Triulzi, Carmelo Romeo

Proceedings Volume 7985, 79850K (2011) https://doi.org/10.1117/12.896910

KEYWORDS: Critical dimension metrology, Photomasks, Semiconducting wafers, Lithography, Signal attenuation, Scanners, Process control, Reticles, Scatterometry, Calibration

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For the next years optical lithography stays at 193nm with a numerical aperture of 1.35. Mask design becomes more complex, mask and lithography specifications tighten. The k1 factor comes close to 0.25 which leads to a tremendously increased Mask Error Enhancement Factor (MEEF). This means that CD errors on mask are getting highly amplified on wafer. Process control becomes more important than ever. Accurate process control is a key factor to success to maintain a high yield in chip production. One key parameter to ensure a high and reliable functionality for any integrated circuit is the critical dimension uniformity (CDU). There are different contributors which impact the intra-field CD performance at wafer such as mask CD uniformity, scanner fingerprint, resist process etc. In the present work we focus on improvement of mask CD signature which is one of the main contributors to intra-field CD uniformity. The mask CD uniformity has been measured by WLCD32 which measures the CD based on proven aerial image technology. Based on this CD input the CD uniformity was corrected by CDC200^TM and afterwards verified by WLCD32 measurement. The CDC200^TM tool utilizes an ultrafast femto-second laser to write intra-volume shading elements (Shade-In Elements^TM) inside the bulk material of the mask. By adjusting the density of the shading elements, the light transmission through the mask is locally changed in a manner that improves wafer CDU when the corrected mask is printed. Additionally, the impact of the improved CD uniformity on the lithography process window was investigated. Goal of the work is to establish a process flow for mask CD uniformity improvement based on mask CD metrology by WLCD32 and mask CD uniformity control by CDC200^TM and to verify its impact on the lithography process window. The proposed process flow will be validated by wafer prints. It was shown that the WLCD32 has an excellent correlation to wafer data and an outstanding CD repeatability. It provides a reliable input for CD uniformity correction and is the tool of choice to verify the CD uniformity improvement after CDC200^TM treatment.

Proceedings Article | 23 March 2011 Paper

Correcting image placement errors using registration control (RegC) technology

Erez Graitzer, Gunter Antesberger, Guy Ben-Zvi, Avi Cohen, Vladimir Dmitriev, Stephanie Winkelmeier

Proceedings Volume 7973, 797312 (2011) https://doi.org/10.1117/12.879885

KEYWORDS: Photomasks, Image registration, Overlay metrology, Scanners, Metrology, Manufacturing, Semiconducting wafers, Silica, Algorithm development, Prototyping

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Proceedings Article | 25 September 2010 Paper

Process window improvement on 45nm technology non volatile memory by CD uniformity improvement

Ute Buttgereit, Robert Birkner, Erez Graitzer, Avi Cohen, Benedetta Triulzi, Carmelo Romeo

Proceedings Volume 7823, 78230C (2010) https://doi.org/10.1117/12.865484

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Photomasks, Lithography, Scanners, Scatterometry, Process control, Signal attenuation, Calibration, 193nm lithography

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Proceedings Article | 16 April 2010 Paper

CD uniformity correction on 45-nm technology non-volatile memory

Ute Buttgereit, Robert Birkner, Mark Joyner, Erez Graitzer, Avi Cohen, Hiroyuki Miyashita, Benedetta Triulzi, Alejandro Fasciszewski Zeballos, Carmelo Romeo

Proceedings Volume 7638, 76383K (2010) https://doi.org/10.1117/12.847028

KEYWORDS: Semiconducting wafers, Photomasks, Critical dimension metrology, Calibration, Scanners, Signal attenuation, Airborne remote sensing, Reticles, Metrology, Process control

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Proceedings Article | 2 April 2010 Paper

Improved CD control for 45-40 nm CMOS logic patterning: anticipation for 32-28 nm

Bertrand Le Gratiet, Frank Sundermann, Jean Massin, Marianne Decaux, Nicolas Thivolle, Fabrice Baron, Alain Ostrovsky, Cedric Monget, Jean Damien Chapon, Yoann Blancquaert, Karen Dabertrand, Lionel Thevenon, Benedicte Bry, Nicolas Cluet, Bertrand Borot, Raphael Bingert, Thierry Devoivre, Pascal Gourard, Laurène Babaud, Ute Buttgereit, Robert Birkner, Mark Joyner, Erez Graitzer, Avi Cohen

Proceedings Volume 7638, 76380A (2010) https://doi.org/10.1117/12.845987

KEYWORDS: Photomasks, Critical dimension metrology, Metrology, Etching, Scanners, Semiconducting wafers, Airborne remote sensing, Logic, Optical lithography, Process control

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Proceedings Article | 14 December 2009 Paper

Expanding the lithography process window (PW) with CDC technology

Sz-Huei Wang, Guy Ben-Zvi, Yu-Wan Chen, Chung Ming Kuo, Erez Graitzer, Avi Cohen

Proceedings Volume 7520, 75202B (2009) https://doi.org/10.1117/12.845618

KEYWORDS: Photomasks, Semiconducting wafers, Lithography, Semiconductors, Scanning electron microscopy, Inspection, Lawrencium, Electroluminescence, Manufacturing, Defect inspection

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Proceedings Article | 23 September 2009 Paper

Expanding the lithography process window (PW) with CDC technology

Sz-Huei Wang, Yu-Wan Chen, Chung Ming Kuo, Erez Graitzer, Guy Ben-Zvi, Avi Cohen

Proceedings Volume 7488, 74880I (2009) https://doi.org/10.1117/12.833442

KEYWORDS: Photomasks, Semiconducting wafers, Lithography, Semiconductors, Scanning electron microscopy, Inspection, Lawrencium, Electroluminescence, Manufacturing, Defect inspection

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Proceedings Article | 16 March 2009 Paper

Multiple layer CD control treatment

Anka Birnstein, Christoph Röpke, Martin Sczyrba, Rainer Pforr, Mario Hennig, Guy Ben-Zvi, Erez Graitzer, Avi Cohen

Proceedings Volume 7274, 727422 (2009) https://doi.org/10.1117/12.814123

KEYWORDS: Signal attenuation, Photomasks, Semiconducting wafers, Critical dimension metrology, Scanners, Multilayers, Objectives, Deep ultraviolet, Lenses, Chemical elements

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Proceedings Article | 17 October 2008 Paper

Detection of progressive transmission loss due to haze with Galileo mask DUV transmittance mapping based on non imaging optics

Steven Labovitz, Guy Ben-Zvi, Vladimir Dmitriev, Erez Graitzer, Eitan Zait

Proceedings Volume 7122, 712216 (2008) https://doi.org/10.1117/12.801558

KEYWORDS: Photomasks, Semiconducting wafers, Deep ultraviolet, Air contamination, Pellicles, Critical dimension metrology, Quartz, Nonimaging optics, Metrology, Reticles

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In this paper, we expand on our earlier work^1,2 reporting the use of high sensitivity DUV transmission metrology as a means for detection of progressive transmission loss on mask and pellicle surfaces. We also report a use case for incoming reticle qualification based on DUV transmission uniformity. Traditional inspection systems rely on algorithms to locate discrete defects greater than a threshold size (typically > 100nm), or printing a wafer and then looking for repeating defects using wafer inspection and SEM review. These types of defect inspection do not have the ability to detect transmission degradation at the low levels where it begins to impact yield. There are numerous mechanisms for transmission degradation, including haze in its early, thin film form, electric-field induced field migration, and pellicle degradation. During the early development of haze, it behaves as a surface film which reduces 193nm transmission and requires compensation by scanner dose. The film forms in a non-uniform fashion, resulting from non-uniformity of exposure on the pattern side due to varying dose passing through the attenuating layers. As this non-uniformity evolves, there is a gradual loss of wafer critical dimension uniformity (CDU) due to a degradation of the exposure dose homogeneity. Electric-field induced migration also appears to manifest as a non-uniform transmission loss, typically presenting with a radial signature. In this paper we present evidence that a DUV transmission measurement system, Galile^TM, is capable of detecting low levels of transmission loss, prior to CDU related yield loss or the appearance of printing defects. Galileo is an advanced DUV transmission metrology system which utilizes a wide-band, incoherent light source and non-imaging optics to achieve sensitivities to transmission changes of less than 0.1%. Due to its very high SNR, it has a fast MAM time of less than 1 sec per point, measuring a full field mask in as little as 30 minutes. A flexible user interface enables users to easily define measurement recipes, threshold sensitivities, and time-based tracking of transmission degradation. The system measures through pellicle under better than class 1 clean air conditions.

Proceedings Article | 19 May 2008 Paper

Mask CD control (CDC) using AIMS as the CD metrology data source

Guy Ben-Zvi, Eitan Zait, Vladimir Dmitriev, Steven Labovitz, Erez Graitzer, Klaus Böhm, Robert Birkner, Thomas Scheruebl

Proceedings Volume 7028, 70281C (2008) https://doi.org/10.1117/12.793054

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Signal attenuation, Scanners, Airborne remote sensing, Calibration, Data corrections, Cadmium, Scatterometry

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Proceedings Article | 19 May 2008 Paper

Very high sensitivity mask transmittance mapping and measurements based on non imaging optics with Galileo

Guy Ben-Zvi, Vladimir Dmitriev, Erez Graitzer, Eitan Zait, Ofir Sharoni, Steven Labovitz

Proceedings Volume 7028, 702828 (2008) https://doi.org/10.1117/12.798462

KEYWORDS: Air contamination, Photomasks, Pellicles, Semiconducting wafers, Coating, Critical dimension metrology, Chromium, Deep ultraviolet, Silica, Printing

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Proceedings Article | 2 May 2008 Paper

Very high sensitivity mask DUV transmittance mapping and measurements based on non-imaging optics

Guy Ben-Zvi, Vladimir Dmitriev, Erez Graitzer, Eitan Zait, Ofir Sharoni, Avi Cohen

Proceedings Volume 6792, 679213 (2008) https://doi.org/10.1117/12.798801

KEYWORDS: Photomasks, Deep ultraviolet, Imaging systems, Chromium, Nonimaging optics, Pellicles, Coating, Etching, Contamination, Air contamination

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A key feature of a photomask is the transmission (Tr) property of its many surfaces. Typical advanced 6" masks have 4 surfaces: back side Quartz (Qz), front side pattern, inside pellicle and outside pellicle. In addition to the surfaces themselves, the bulk of the transparent materials- fused silica, fluoropolymers, and MoSi shifter stacks, have specific optical Tr properties which contribute to the total Tr properties of the mask. Surface coating materials such as Cr of varying thicknesses and Anti Reflective (AR) coatings also contribute to the total Tr of the photomask. Overall the wafer printed pattern fidelity to the design depends both on the physical size of the etched lines and spaces and on the Tr properties of the spaces and of the coating material in the lines. The high MEEF values reported in advanced litho processes are most probably affected among other factors by mask Tr properties which may significantly deviate from their ideal Tr values. Factors which may contribute to transmission deviations include contamination on any of the surfaces due to haze growth, contamination by metal and oxide ions absorbed in the Qz and adsorbed on the Qz surface during mask manufacturing, photochemical degradation of the pellicle and fused silica substrates, degradation of absorber thickness (particularly MoSi) due to clean processes, and more. Accumulated contributions of all those factors can give rise to transmission variations of up to several percent. It is well known that every percent of exposure dose change may result in 1-2 nm CD change on wafer depending on exposure and process conditions. All of the above factors raise the need for an advanced transmission measurement system that will be able to measure transmission at the exposure wavelength with sensitivities better than 0.1%, preferably better than 0.01% (100 ppm). Such systems are currently not available. In this paper we describe a DUV Tr measurement system which provides the ability to measure Tr profiles of blanks and patterned masks. The system has a very fast MAM time of less than 1 sec per point and can measure the Tr Uniformity (TRU) profile of a full size mask with 100% coverage in less than 4 hours. The system is very flexible and allows the user to define the density and sensitivity of the measurements in order to suit a particular task. The system measures through pellicle under better than class 1 clean air conditions. The system is distinguishable from existing Tr measurement systems by the fact that it is non imaging, uses an incoherent wide band light source with very high SNR, high sensitivity, and very high stability.

Proceedings Article | 31 October 2007 Paper

Mask CD control (CDC) with ultrafast laser for improving mask CDU using AIMS as the CD metrology data source

Guy Ben-Zvi, Eitan Zait, Vladimir Dmitriev, Erez Graitzer, Gidi Gottlieb, Lior Leibovich, Robert Birkner, Klaus Boehm, Thomas Scheruebl

Proceedings Volume 6730, 67304X (2007) https://doi.org/10.1117/12.771190

KEYWORDS: Photomasks, Critical dimension metrology, Semiconducting wafers, Signal attenuation, Ultrafast lasers, Airborne remote sensing, Scanners, Data corrections, Control systems, Scanning electron microscopy

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Showing 5 of 21 publications

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