Mr. Eric L. Fanucchi Profile

Eric L. Fanucchi

Photomask Engineering Manager at Photo Image Creations

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Author

Publications (4)

Proceedings Article | 17 December 2003 Paper

Comparisons of 9% versus 6% transmission attenuated phase-shift mask for the 65-nm device mode

Patrick Montgomery, Kevin Lucas, Lloyd Litt, Will Conley, Eric Fanucchi, Johannes Van Wingerden, Geert Vandenberghe, Vincent Wiaux, Darren Taylor, Michael Cangemi, Bryan Kasprowicz

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518022

KEYWORDS: Photomasks, Inspection, Printing, Reticles, Critical dimension metrology, Optical lithography, Manufacturing, Metals, 193nm lithography, Nanoimprint lithography

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Proceedings Article | 26 June 2003 Paper

Process, design, and optical proximity correction requirements for the 65nm device generation

Kevin Lucas, Patrick Montgomery, Lloyd Litt, Will Conley, Sergei Postnikov, Wei Wu, Chi-Min Yuan, Marc Olivares, Kirk Strozewski, Russell Carter, James Vasek, David Smith, Eric Fanucchi, Vincent Wiaux, Geert Vandenberghe, Olivier Toublan, Arjan Verhappen, Jan Kuijten, Johannes van Wingerden, Bryan Kasprowicz, Jeffrey Tracy, Christopher Progler, Eugene Shiro, Igor Topouzov, Karl Wimmer, Bernard Roman

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485498

KEYWORDS: Reticles, Optical lithography, Optical proximity correction, Lithography, 193nm lithography, Scanners, Logic, Optical design, Lithographic illumination, SRAF

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Proceedings Article | 26 June 2003 Paper

Mighty high-T lithography for 65-nm generation contacts

Will Conley, Patrick Montgomery, Kevin Lucas, Lloyd Litt, John Maltabes, Laurent Dieu, Gregory Hughes, David Mellenthin, Robert Socha, Eric Fanucchi, Arjan Verhappen, Kurt Wampler, Linda Yu, Erika Schaefer, Shawn Cassel, Jan Kuijten, Wil Pijnenburg, Vincent Wiaux, Geert Vandenberghe

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485499

KEYWORDS: Photomasks, Lithography, Inspection, Reticles, Optical lithography, Lithographic illumination, Binary data, Manufacturing, 193nm lithography, Semiconducting wafers

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Proceedings Article | 27 December 2002 Paper

Advanced 193 tri-tone EAPSM (9% to 18%) for 65-nm node

Laurent Dieu, Eric Fanucchi, Greg Hughes, John Maltabes, David Mellenthin, Will Conley, Lloyd Litt, Kevin Lucas, Robert Socha, Kurt Wampler, Arjan Verhappen, Jan-Pieter Kiujten

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467783

KEYWORDS: Reticles, Inspection, Multilayers, Tin, Manufacturing, Lithography, Etching, Photomasks, Process control, Transmittance

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