Mr. Erik Loopstra Profile

Erik Loopstra

System Engineer at ASML Netherlands BV

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Publications (6)

Proceedings Article | 12 October 2018 Presentation

High-NA EUV lithography exposure tool progress (Conference Presentation)

Jan van Schoot, Eelco van Setten, Kars Troost, Frank Bornebroek, Rob van Ballegoij, Sjoerd Lok, Judon Stoeldraijer, Jo Finders, Hans Meiling, Paul Graeupner, Peter Kuerz, Winfried Kaiser, Erik Loopstra, Bernhard Kneer, Sascha Migura

Proceedings Volume 10809, 108090Z (2018) https://doi.org/10.1117/12.2502894

KEYWORDS: Extreme ultraviolet lithography, High volume manufacturing, Scanners, Lens design, Sensors, Polarization, Polarization control

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Proceedings Article | 16 October 2017 Presentation

Performance and characteristics of the NXE:3400 optical system enabling sub-10nm node lithography (Conference Presentation)

Michael Busshardt, Olaf Conradi, Benjamin Kaminski, Peter Kürz, Jörg Tschischgale, Albert Voit, Markus Hauf, Jörg Zimmermann, Erik Loopstra, Tilmann Heil, Mark van de Kerkhof, Jelmer Kamminga, Roel Merry, Hans Jasper

Proceedings Volume 10450, 104500D (2017) https://doi.org/10.1117/12.2280545

KEYWORDS: Scanners, Imaging systems, Projection systems, Image resolution, Lithography, Extreme ultraviolet, Optical lithography, Lithographic illumination, Extreme ultraviolet lithography, Optical design

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The optical train is a key sub-system of each lithography scanner. The single patterning resolution limit of a scanner is determined by the characteristics and performance of its imaging system consisting of illumination and projection optics. The most relevant performance parameters of the illumination system are the maximum achievable setting flexibility, off-axis imaging capability (sigma) and pupil fill ratio (PFR). The projection optics key drivers numerical aperture (NA), aberration level, and stray light determine resolution limit and image quality of the scanner. In EUV lithography, optimizing aerial image contrast and image overlay is of particular importance to achieve the required resolution and edge placement performance of the scanner because stochastic effects degrading the initial image as e.g. resist blur and photon shot noise are still comparably strong. In this paper, we present an overview on the new features of the NXE:3400 EUV optical system designed to improve resolution limit, contrast and overlay performance of the NXE:3400 scanner. The illumination system features a novel design based on a large number of switchable facetted mirrors which enables an unprecedented setting flexibility and reduced pupil fill ratio. Furthermore, the off-axis imaging capability of the illuminator has been extended to the full NA which in combination with the reduced PFR improves the single patterning resolution limit of the NXE:3400 by approximately 20% down to 13nm. In addition, by exploiting the increased flexibility of the 3400 illumination system, we demonstrate the ability to further correct for 3D mask effects, and excellent matching to the NXE:3350 system. The projection optics features a NA of 0.33 with significantly reduced aberration level as compared to the precedent 3350 projection optics. In particular, the non-correctable errors impacting scanner overlay, and the wavefront RMS impacting image contrast have been substantially reduced. Keeping the design concept, the improvements have been implemented such that a seamless matching to the 3350 projection optics is guaranteed. Finally, we present NXE:3400 printing results to verify the imaging performance of the NXE:3400 optical system in resist. NXE:3400B wafer prints demonstrate excellent and consistent imaging performance across several systems in line with the discussed improvements of the optical train.

Proceedings Article | 16 October 2017 Presentation + Paper

High-NA EUV lithography enabling Moore’s law in the next decade

Jan van Schoot, Kars Troost, Frank Bornebroek, Rob van Ballegoij, Sjoerd Lok, Peter Krabbendam, Judon Stoeldraijer, Erik Loopstra, Jos Benschop, Jo Finders, Hans Meiling, Eelco van Setten, Bernhard Kneer, Peter Kuerz, Winfried Kaiser, Tilmann Heil, Sascha Migura, Jens Timo Neumann

Proceedings Volume 10450, 104500U (2017) https://doi.org/10.1117/12.2280592

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Semiconducting wafers, Mirrors, Reticles, Projection systems, Optical design, Imaging systems, Extreme ultraviolet

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Proceedings Article | 27 March 2017 Presentation + Paper

The future of EUV lithography: enabling Moore's Law in the next decade

Alberto Pirati, Jan van Schoot, Kars Troost, Rob van Ballegoij, Peter Krabbendam, Judon Stoeldraijer, Erik Loopstra, Jos Benschop, Jo Finders, Hans Meiling, Eelco van Setten, Niclas Mika, Jeannot Dredonx, Uwe Stamm, Bernhard Kneer, Bernd Thuering, Winfried Kaiser, Tilmann Heil, Sascha Migura

Proceedings Volume 10143, 101430G (2017) https://doi.org/10.1117/12.2261079

KEYWORDS: Extreme ultraviolet lithography, Scanners, Manufacturing, Lens design, Sensors, Optical proximity correction, Modeling, Photomasks, Semiconducting wafers, Extreme ultraviolet, Reflectivity, EUV optics, Lithography, Projection systems

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Proceedings Article | 7 April 2011 Paper

EUV lithography at chipmakers has started: performance validation of ASML's NXE:3100

Christian Wagner, Jose Bacelar, Noreen Harned, Erik Loopstra, Stef Hendriks, Ivo de Jong, Peter Kuerz, Leon Levasier, Mark van de Kerkhof, Martin Lowisch, Hans Meiling, David Ockwell, Rudy Peeters, Eelco van Setten, Judon Stoeldraijer, Stuart Young, John Zimmerman, Ron Kool

Proceedings Volume 7969, 79691F (2011) https://doi.org/10.1117/12.878603

KEYWORDS: Semiconducting wafers, Reticles, Extreme ultraviolet lithography, Overlay metrology, Optical proximity correction, Manufacturing, Extreme ultraviolet, Contamination, High volume manufacturing, Optics manufacturing

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Proceedings Article | 14 September 2001 Paper

Performance results of a new generation of 300-mm lithography systems

Boudewijn Sluijk, Tom Castenmiller, Richard du Croo de Jongh, Hans Jasper, Theo Modderman, Leon Levasier, Erik Loopstra, Guustaaf Savenije, Marc Boonman, Harry Cox

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435752

KEYWORDS: Semiconducting wafers, Optical alignment, Lithography, Sensors, Imaging systems, Metrology, Reticles, Optical lithography, Overlay metrology, Optical scanning systems

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Showing 5 of 6 publications

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